DE60131036D1 - Ein NOT-Schaltkreis - Google Patents
Ein NOT-SchaltkreisInfo
- Publication number
- DE60131036D1 DE60131036D1 DE60131036T DE60131036T DE60131036D1 DE 60131036 D1 DE60131036 D1 DE 60131036D1 DE 60131036 T DE60131036 T DE 60131036T DE 60131036 T DE60131036 T DE 60131036T DE 60131036 D1 DE60131036 D1 DE 60131036D1
- Authority
- DE
- Germany
- Prior art keywords
- emergency circuit
- emergency
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5614—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
- H03K17/545—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes using microengineered devices, e.g. field emission devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/028—Formation of the switching material, e.g. layer deposition by conversion of electrode material, e.g. oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000334686A JP4118500B2 (ja) | 2000-11-01 | 2000-11-01 | ポイントコンタクト・アレー |
JP2000334686 | 2000-11-01 | ||
JP2001138103 | 2001-05-09 | ||
JP2001138103A JP4097912B2 (ja) | 2001-05-09 | 2001-05-09 | Not回路及びそれを用いた電子回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60131036D1 true DE60131036D1 (de) | 2007-11-29 |
DE60131036T2 DE60131036T2 (de) | 2008-02-14 |
Family
ID=26603286
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60131036T Expired - Lifetime DE60131036T2 (de) | 2000-11-01 | 2001-10-29 | Ein NOT-Schaltkreis |
DE60126310T Expired - Lifetime DE60126310T2 (de) | 2000-11-01 | 2001-10-29 | Punktkontaktarray, Not-Schaltung und elektronische Schaltung damit |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60126310T Expired - Lifetime DE60126310T2 (de) | 2000-11-01 | 2001-10-29 | Punktkontaktarray, Not-Schaltung und elektronische Schaltung damit |
Country Status (6)
Country | Link |
---|---|
US (3) | US7026911B2 (de) |
EP (2) | EP1331671B1 (de) |
KR (1) | KR100751736B1 (de) |
DE (2) | DE60131036T2 (de) |
TW (1) | TW523983B (de) |
WO (1) | WO2002037572A1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100751736B1 (ko) | 2000-11-01 | 2007-08-27 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 포인트 컨택트 어레이, not 회로, 및 이를 이용한 전자회로 |
CN100448049C (zh) * | 2001-09-25 | 2008-12-31 | 独立行政法人科学技术振兴机构 | 使用固体电解质的电气元件和存储装置及其制造方法 |
DE10256486A1 (de) * | 2002-12-03 | 2004-07-15 | Infineon Technologies Ag | Verfahren zum Herstellen einer Speicherzelle, Speicherzelle und Speicherzellen-Anordnung |
EP2017992B1 (de) | 2003-08-25 | 2020-04-22 | Signal Trust for Wireless Innovation | Erweiterter Uplink-Betrieb bei Soft Handover |
JP4356542B2 (ja) * | 2003-08-27 | 2009-11-04 | 日本電気株式会社 | 半導体装置 |
US7046648B2 (en) | 2003-11-05 | 2006-05-16 | Interdigital Technology Corporation | Wireless communication method and apparatus for coordinating Node-B's and supporting enhanced uplink transmissions during handover |
US7374793B2 (en) | 2003-12-11 | 2008-05-20 | International Business Machines Corporation | Methods and structures for promoting stable synthesis of carbon nanotubes |
US20050167655A1 (en) | 2004-01-29 | 2005-08-04 | International Business Machines Corporation | Vertical nanotube semiconductor device structures and methods of forming the same |
US7211844B2 (en) | 2004-01-29 | 2007-05-01 | International Business Machines Corporation | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage |
US7829883B2 (en) | 2004-02-12 | 2010-11-09 | International Business Machines Corporation | Vertical carbon nanotube field effect transistors and arrays |
US20050274609A1 (en) * | 2004-05-18 | 2005-12-15 | Yong Chen | Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field |
US7109546B2 (en) | 2004-06-29 | 2006-09-19 | International Business Machines Corporation | Horizontal memory gain cells |
US7960217B2 (en) * | 2004-09-08 | 2011-06-14 | Thomas Schimmel | Gate controlled atomic switch |
US7741638B2 (en) * | 2005-11-23 | 2010-06-22 | Hewlett-Packard Development Company, L.P. | Control layer for a nanoscale electronic switching device |
US9965251B2 (en) | 2006-04-03 | 2018-05-08 | Blaise Laurent Mouttet | Crossbar arithmetic and summation processor |
US7872334B2 (en) * | 2007-05-04 | 2011-01-18 | International Business Machines Corporation | Carbon nanotube diodes and electrostatic discharge circuits and methods |
EP2184793B1 (de) * | 2007-08-08 | 2013-02-27 | National Institute for Materials Science | Schaltelement und seine anwendung |
US20090038832A1 (en) * | 2007-08-10 | 2009-02-12 | Sterling Chaffins | Device and method of forming electrical path with carbon nanotubes |
US7768812B2 (en) | 2008-01-15 | 2010-08-03 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US8034655B2 (en) | 2008-04-08 | 2011-10-11 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays |
US8211743B2 (en) | 2008-05-02 | 2012-07-03 | Micron Technology, Inc. | Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes |
US8134137B2 (en) | 2008-06-18 | 2012-03-13 | Micron Technology, Inc. | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods |
US9343665B2 (en) | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
US8411477B2 (en) | 2010-04-22 | 2013-04-02 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8427859B2 (en) | 2010-04-22 | 2013-04-23 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8289763B2 (en) | 2010-06-07 | 2012-10-16 | Micron Technology, Inc. | Memory arrays |
US8668361B2 (en) * | 2010-09-22 | 2014-03-11 | Bridgelux, Inc. | LED-based replacement for fluorescent light source |
US8351242B2 (en) | 2010-09-29 | 2013-01-08 | Micron Technology, Inc. | Electronic devices, memory devices and memory arrays |
US8759809B2 (en) | 2010-10-21 | 2014-06-24 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer |
US8526213B2 (en) | 2010-11-01 | 2013-09-03 | Micron Technology, Inc. | Memory cells, methods of programming memory cells, and methods of forming memory cells |
US8796661B2 (en) | 2010-11-01 | 2014-08-05 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cell |
US9454997B2 (en) | 2010-12-02 | 2016-09-27 | Micron Technology, Inc. | Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells |
US8431458B2 (en) | 2010-12-27 | 2013-04-30 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells |
US8791447B2 (en) | 2011-01-20 | 2014-07-29 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8488365B2 (en) | 2011-02-24 | 2013-07-16 | Micron Technology, Inc. | Memory cells |
US8537592B2 (en) | 2011-04-15 | 2013-09-17 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US9792985B2 (en) | 2011-07-22 | 2017-10-17 | Virginia Tech Intellectual Properties, Inc. | Resistive volatile/non-volatile floating electrode logic/memory cell |
WO2016193361A1 (en) | 2015-06-04 | 2016-12-08 | Eth Zurich | Devices, in particular optical or electro-optical devices with quantized operation |
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US3295112A (en) * | 1964-01-10 | 1966-12-27 | Space General Corp | Electrochemical logic elements |
US4258109A (en) * | 1977-04-25 | 1981-03-24 | Duracell International Inc. | Solid state cells |
DE2806464C3 (de) * | 1978-02-15 | 1980-09-11 | Garching Instrumente, Gesellschaft Zur Industriellen Nutzung Von Forschungsergebnissen Mbh, 8000 Muenchen | Elektrisches Bauelement |
US4245637A (en) * | 1978-07-10 | 1981-01-20 | Nichols Robert L | Shutoff valve sleeve |
DE3004571A1 (de) * | 1980-02-07 | 1981-08-13 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Feste elektrode in einer elektrolytischen zelle |
FR2521125A1 (fr) * | 1982-02-09 | 1983-08-12 | Centre Nat Rech Scient | Materiaux vitreux a conductivite ionique, leur preparation et leurs applications electrochimiques |
US4446059A (en) * | 1982-04-15 | 1984-05-01 | E. I. Du Pont De Nemours & Co. | Conductor compositions |
US4478679A (en) * | 1983-11-30 | 1984-10-23 | Storage Technology Partners | Self-aligning process for placing a barrier metal over the source and drain regions of MOS semiconductors |
JPS61230426A (ja) * | 1985-04-04 | 1986-10-14 | Agency Of Ind Science & Technol | ジヨセフソン直結型否定回路 |
US5166919A (en) * | 1991-07-11 | 1992-11-24 | International Business Machines Corporation | Atomic scale electronic switch |
EP0548905B1 (de) * | 1991-12-24 | 1999-03-03 | Hitachi, Ltd. | Atomare Vorrichtungen und atomare logische Schaltungen |
JP2616875B2 (ja) * | 1993-05-12 | 1997-06-04 | エスエムシー株式会社 | マニホールドバルブ |
GB2283136A (en) * | 1993-10-23 | 1995-04-26 | Nicotech Ltd | Electric converter circuits |
US5366936A (en) * | 1993-11-24 | 1994-11-22 | Vlosov Yuri G | Chalcogenide ion selective electrodes |
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US5714768A (en) * | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
JPH09326514A (ja) * | 1996-06-05 | 1997-12-16 | Fujitsu Ltd | 超電導量子干渉素子回路装置 |
US6087674A (en) * | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
US6825489B2 (en) * | 2001-04-06 | 2004-11-30 | Axon Technologies Corporation | Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same |
EP1159743B1 (de) * | 1999-02-11 | 2007-05-02 | Arizona Board of Regents | Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung |
WO2000070325A1 (en) * | 1999-05-13 | 2000-11-23 | Japan Science And Technology Corporation | Scanning tunneling microscope, its probe, processing method for the probe and production method for fine structure |
KR100751736B1 (ko) | 2000-11-01 | 2007-08-27 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 포인트 컨택트 어레이, not 회로, 및 이를 이용한 전자회로 |
WO2003094227A1 (en) * | 2002-04-30 | 2003-11-13 | Japan Science And Technology Agency | Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device |
US6635525B1 (en) * | 2002-06-03 | 2003-10-21 | International Business Machines Corporation | Method of making backside buried strap for SOI DRAM trench capacitor |
US6952042B2 (en) * | 2002-06-17 | 2005-10-04 | Honeywell International, Inc. | Microelectromechanical device with integrated conductive shield |
-
2001
- 2001-10-29 KR KR1020037004682A patent/KR100751736B1/ko not_active IP Right Cessation
- 2001-10-29 EP EP01980925A patent/EP1331671B1/de not_active Expired - Lifetime
- 2001-10-29 US US10/363,259 patent/US7026911B2/en not_active Expired - Lifetime
- 2001-10-29 TW TW090126677A patent/TW523983B/zh not_active IP Right Cessation
- 2001-10-29 EP EP06001940A patent/EP1662575B1/de not_active Expired - Lifetime
- 2001-10-29 WO PCT/JP2001/009464 patent/WO2002037572A1/ja active IP Right Grant
- 2001-10-29 DE DE60131036T patent/DE60131036T2/de not_active Expired - Lifetime
- 2001-10-29 DE DE60126310T patent/DE60126310T2/de not_active Expired - Lifetime
-
2004
- 2004-08-16 US US10/918,360 patent/US7473982B2/en not_active Expired - Fee Related
-
2005
- 2005-06-24 US US11/165,037 patent/US7525410B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1331671A1 (de) | 2003-07-30 |
US20050014325A1 (en) | 2005-01-20 |
EP1662575A2 (de) | 2006-05-31 |
US7026911B2 (en) | 2006-04-11 |
DE60126310T2 (de) | 2007-06-06 |
KR20030048421A (ko) | 2003-06-19 |
US7525410B2 (en) | 2009-04-28 |
KR100751736B1 (ko) | 2007-08-27 |
EP1331671A4 (de) | 2005-05-04 |
US20050243844A1 (en) | 2005-11-03 |
EP1662575A3 (de) | 2006-06-07 |
US7473982B2 (en) | 2009-01-06 |
EP1331671B1 (de) | 2007-01-24 |
EP1662575B1 (de) | 2007-10-17 |
TW523983B (en) | 2003-03-11 |
WO2002037572A1 (fr) | 2002-05-10 |
DE60126310D1 (de) | 2007-03-15 |
US20030174042A1 (en) | 2003-09-18 |
DE60131036T2 (de) | 2008-02-14 |
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