DE60127887D1 - Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode - Google Patents

Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode

Info

Publication number
DE60127887D1
DE60127887D1 DE60127887T DE60127887T DE60127887D1 DE 60127887 D1 DE60127887 D1 DE 60127887D1 DE 60127887 T DE60127887 T DE 60127887T DE 60127887 T DE60127887 T DE 60127887T DE 60127887 D1 DE60127887 D1 DE 60127887D1
Authority
DE
Germany
Prior art keywords
photodiode
reducing
leakage current
photosensitive surface
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127887T
Other languages
English (en)
Inventor
Thomas Edward Kopley
Dietrich W Vook
Thomas Dungan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies General IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies General IP Singapore Pte Ltd filed Critical Avago Technologies General IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60127887D1 publication Critical patent/DE60127887D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
DE60127887T 2000-03-03 2001-01-26 Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode Expired - Lifetime DE60127887D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/517,635 US6350663B1 (en) 2000-03-03 2000-03-03 Method for reducing leakage currents of active area diodes and source/drain diffusions

Publications (1)

Publication Number Publication Date
DE60127887D1 true DE60127887D1 (de) 2007-05-31

Family

ID=24060592

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127887T Expired - Lifetime DE60127887D1 (de) 2000-03-03 2001-01-26 Verfahren und Struktur zur Verringerung des Leckstroms der lichtempfindlichen Fläche einer PhotoDiode

Country Status (4)

Country Link
US (3) US6350663B1 (de)
EP (1) EP1130638B1 (de)
JP (1) JP2001308303A (de)
DE (1) DE60127887D1 (de)

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US7557799B2 (en) 2004-06-17 2009-07-07 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. System for determining pointer position, movement, and angle
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WO2006102412A2 (en) 2005-03-21 2006-09-28 Abbott Diabetes Care, Inc. Method and system for providing integrated medication infusion and analyte monitoring system
US7768408B2 (en) 2005-05-17 2010-08-03 Abbott Diabetes Care Inc. Method and system for providing data management in data monitoring system
US7620437B2 (en) 2005-06-03 2009-11-17 Abbott Diabetes Care Inc. Method and apparatus for providing rechargeable power in data monitoring and management systems
US7756561B2 (en) 2005-09-30 2010-07-13 Abbott Diabetes Care Inc. Method and apparatus for providing rechargeable power in data monitoring and management systems
US7583190B2 (en) 2005-10-31 2009-09-01 Abbott Diabetes Care Inc. Method and apparatus for providing data communication in data monitoring and management systems
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US8560082B2 (en) 2009-01-30 2013-10-15 Abbott Diabetes Care Inc. Computerized determination of insulin pump therapy parameters using real time and retrospective data processing
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JP5487734B2 (ja) * 2009-06-05 2014-05-07 株式会社ニコン 固体撮像素子
EP4276652A3 (de) 2009-07-23 2024-01-31 Abbott Diabetes Care, Inc. Echtzeitverwaltung von daten in zusammenhang mit der physiologischen steuerung von glucosespiegeln
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP5377549B2 (ja) * 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
US9082905B2 (en) * 2012-02-15 2015-07-14 Texas Instruments Incorporated Photodiode employing surface grating to enhance sensitivity
JP5985269B2 (ja) 2012-06-26 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
US6417074B2 (en) 2002-07-09
EP1130638B1 (de) 2007-04-18
US20010023095A1 (en) 2001-09-20
US6437379B2 (en) 2002-08-20
JP2001308303A (ja) 2001-11-02
US6350663B1 (en) 2002-02-26
EP1130638A2 (de) 2001-09-05
US20010024864A1 (en) 2001-09-27
EP1130638A3 (de) 2003-10-15

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