DE60118316D1 - Schaltkreis und Verfahren zum Trimmen integrierter Schaltungen - Google Patents

Schaltkreis und Verfahren zum Trimmen integrierter Schaltungen

Info

Publication number
DE60118316D1
DE60118316D1 DE60118316T DE60118316T DE60118316D1 DE 60118316 D1 DE60118316 D1 DE 60118316D1 DE 60118316 T DE60118316 T DE 60118316T DE 60118316 T DE60118316 T DE 60118316T DE 60118316 D1 DE60118316 D1 DE 60118316D1
Authority
DE
Germany
Prior art keywords
trim
value
current
circuit
circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60118316T
Other languages
English (en)
Other versions
DE60118316T2 (de
Inventor
You-Yuh Shyr
Sorin Laurentiu Negru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
O2Micro International Ltd
Original Assignee
O2Micro International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by O2Micro International Ltd filed Critical O2Micro International Ltd
Publication of DE60118316D1 publication Critical patent/DE60118316D1/de
Application granted granted Critical
Publication of DE60118316T2 publication Critical patent/DE60118316T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/10—Calibration or testing
    • H03M1/1009—Calibration
    • H03M1/1014—Calibration at one point of the transfer characteristic, i.e. by adjusting a single reference value, e.g. bias or gain error
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/742—Simultaneous conversion using current sources as quantisation value generators
DE60118316T 2000-01-24 2001-01-19 Schaltkreis und Verfahren zum Trimmen integrierter Schaltungen Expired - Lifetime DE60118316T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US489660 2000-01-24
US09/489,660 US6472897B1 (en) 2000-01-24 2000-01-24 Circuit and method for trimming integrated circuits

Publications (2)

Publication Number Publication Date
DE60118316D1 true DE60118316D1 (de) 2006-05-18
DE60118316T2 DE60118316T2 (de) 2007-03-29

Family

ID=23944746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60118316T Expired - Lifetime DE60118316T2 (de) 2000-01-24 2001-01-19 Schaltkreis und Verfahren zum Trimmen integrierter Schaltungen

Country Status (6)

Country Link
US (5) US6472897B1 (de)
EP (1) EP1126524B1 (de)
CN (1) CN1184679C (de)
AT (1) ATE322104T1 (de)
DE (1) DE60118316T2 (de)
TW (1) TW501267B (de)

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US6872582B2 (en) * 2002-03-05 2005-03-29 Texas Instruments Incorporated Selective trim and wafer testing of integrated circuits
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US6882214B2 (en) * 2003-05-16 2005-04-19 O2Micro International Limited Circuit and method for trimming locking of integrated circuits
CN100437870C (zh) * 2003-05-16 2008-11-26 美国凹凸微系有限公司 集成电路校准锁定的电路和方法
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CN101285848B (zh) * 2008-05-28 2010-06-02 炬力集成电路设计有限公司 一种校正和获取参考电压的方法和装置
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US8645583B2 (en) * 2010-09-23 2014-02-04 Intersil Americas Inc. Zero pin serial interface
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US10145882B2 (en) * 2010-09-24 2018-12-04 Infineon Technologies Ag Sensor self-diagnostics using multiple signal paths
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CN103378828B (zh) 2012-04-25 2017-07-07 飞思卡尔半导体公司 用于时钟源的微调电路
JP2014027141A (ja) 2012-07-27 2014-02-06 Ricoh Co Ltd トリミング回路及びトリミング方法、並びに電源装置、
CN103473390B (zh) * 2013-08-13 2017-08-08 深圳市天微电子股份有限公司 集成电路参数修调电路及其修调模块、修调方法
US8929158B1 (en) 2013-10-15 2015-01-06 Integrated Silicon Solution, Inc. Auto-trimming of internally generated voltage level in an integrated circuit
CN103631180B (zh) * 2013-11-28 2016-05-18 江苏省如高高压电器有限公司 隔离开关智能控制器
CN103760392B (zh) * 2014-01-22 2016-05-25 西安电子科技大学 用于dc-dc转换器的调节修正信号产生电路
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US9741403B2 (en) 2014-11-12 2017-08-22 Micron Technology, Inc. Apparatuses and methods to perform post package trim
US9349491B1 (en) 2015-04-17 2016-05-24 Micron Technology, Inc. Repair of memory devices using volatile and non-volatile memory
CN104931823B (zh) * 2015-06-08 2018-09-25 小米科技有限责任公司 电子设备的测试方法及装置
JP2018045743A (ja) * 2016-09-13 2018-03-22 東芝メモリ株式会社 半導体装置及びメモリシステム
US10027447B2 (en) 2016-10-17 2018-07-17 Analog Devices, Inc. Circuits for on-situ differential impedance balance error measurement and correction
CN106936401B (zh) * 2017-03-16 2021-06-29 聚洵半导体科技（上海）有限公司 一种封装后可编程高性能运算放大器
US10359469B2 (en) 2017-12-12 2019-07-23 Nxp Usa, Inc. Non-intrusive on-chip analog test/trim/calibrate subsystem
US10816595B2 (en) 2018-10-19 2020-10-27 Nxp Usa, Inc. Self-test apparatuses having distributed self-test controller circuits and controller circuitry to control self-test execution based on self-test properties and method thereof
US10832791B2 (en) 2019-01-24 2020-11-10 Micron Technology, Inc. Apparatuses and methods for soft post-package repair
US11329612B2 (en) 2019-11-27 2022-05-10 Analog Devices International Unlimited Company Interface cell for circuit adjustment
CN113189478B (zh) * 2020-09-03 2023-10-24 成都利普芯微电子有限公司 一种芯片修调电路及修调方法
KR20220125598A (ko) 2021-03-05 2022-09-14 삼성전자주식회사 전압 트리밍 회로
US11914410B2 (en) 2021-06-07 2024-02-27 Texas Instruments Incorporated Accuracy trim architecture for high precision voltage reference
CN113917967B (zh) * 2021-09-26 2022-05-13 电子科技大学 一种低功耗修调电路

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Also Published As

Publication number Publication date
US7436222B2 (en) 2008-10-14
EP1126524A3 (de) 2003-10-15
EP1126524A2 (de) 2001-08-22
US6472897B1 (en) 2002-10-29
ATE322104T1 (de) 2006-04-15
US7319346B2 (en) 2008-01-15
US20040216019A1 (en) 2004-10-28
US20030085741A1 (en) 2003-05-08
US20090033373A1 (en) 2009-02-05
CN1349251A (zh) 2002-05-15
TW501267B (en) 2002-09-01
US6720800B2 (en) 2004-04-13
US20080111576A1 (en) 2008-05-15
DE60118316T2 (de) 2007-03-29
EP1126524B1 (de) 2006-03-29
CN1184679C (zh) 2005-01-12

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