DE60107494D1 - Hochleistungseinzelmodelaser und Herstellungsverfahren - Google Patents

Hochleistungseinzelmodelaser und Herstellungsverfahren

Info

Publication number
DE60107494D1
DE60107494D1 DE60107494T DE60107494T DE60107494D1 DE 60107494 D1 DE60107494 D1 DE 60107494D1 DE 60107494 T DE60107494 T DE 60107494T DE 60107494 T DE60107494 T DE 60107494T DE 60107494 D1 DE60107494 D1 DE 60107494D1
Authority
DE
Germany
Prior art keywords
manufacturing process
high performance
single mode
mode laser
performance single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60107494T
Other languages
English (en)
Other versions
DE60107494T2 (de
Inventor
Si Hyung Cho
William C Dautremont-Smith
Sun-Yuan Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Optoelectronics Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Optoelectronics Guardian Corp filed Critical Agere Systems Optoelectronics Guardian Corp
Publication of DE60107494D1 publication Critical patent/DE60107494D1/de
Application granted granted Critical
Publication of DE60107494T2 publication Critical patent/DE60107494T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
DE60107494T 2000-06-23 2001-06-13 Hochleistungseinzelmodelaser und Herstellungsverfahren Expired - Lifetime DE60107494T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US602931 2000-06-23
US09/602,931 US6432735B1 (en) 2000-06-23 2000-06-23 High power single mode laser and method of fabrication

Publications (2)

Publication Number Publication Date
DE60107494D1 true DE60107494D1 (de) 2005-01-05
DE60107494T2 DE60107494T2 (de) 2005-12-08

Family

ID=24413344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60107494T Expired - Lifetime DE60107494T2 (de) 2000-06-23 2001-06-13 Hochleistungseinzelmodelaser und Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6432735B1 (de)
EP (1) EP1168541B1 (de)
JP (1) JP2002057409A (de)
DE (1) DE60107494T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6829275B2 (en) * 2001-12-20 2004-12-07 Bookham Technology, Plc Hybrid confinement layers of buried heterostructure semiconductor laser
US6996149B2 (en) * 2002-02-19 2006-02-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module
CN1729582A (zh) * 2002-12-20 2006-02-01 克里公司 包含半导体平台结构和导电结的电子器件和所述器件的制作方法
JP2005302910A (ja) * 2004-04-09 2005-10-27 Fujitsu Ltd 半導体発光装置
US7949031B2 (en) * 2006-06-16 2011-05-24 Pbc Lasers Gmbh Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
US8451874B2 (en) * 2009-12-02 2013-05-28 Massachusetts Institute Of Technology Very large mode slab-coupled optical waveguide laser and amplifier
US8571080B2 (en) * 2009-12-02 2013-10-29 Massachusetts Institute Of Technology High efficiency slab-coupled optical waveguide laser and amplifier
EP3781609A1 (de) * 2018-04-18 2021-02-24 Saudi Aramco Technologies Company Endgruppenisomerisierung von poly(alkylencarbonat)polymeren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769791A (en) * 1980-10-17 1982-04-28 Nec Corp Buried heterostructural semiconductor laser device having low radiation angle and manufacture thereof
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6373683A (ja) * 1986-09-17 1988-04-04 Furukawa Electric Co Ltd:The 分布帰還型半導体レ−ザ
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
JPH02159784A (ja) * 1988-12-14 1990-06-19 Oki Electric Ind Co Ltd 半導体レーザ
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
JP3290531B2 (ja) * 1994-02-10 2002-06-10 ローム株式会社 半導体レーザの製法
TW342545B (en) * 1996-03-28 1998-10-11 Sanyo Electric Co Semiconductor laser element and method for designing same
JPH10150244A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp 半導体装置のシミュレーション方法
JP3859839B2 (ja) * 1997-09-30 2006-12-20 富士フイルムホールディングス株式会社 屈折率導波型半導体レーザ装置

Also Published As

Publication number Publication date
US6432735B1 (en) 2002-08-13
EP1168541A3 (de) 2003-03-26
US6552358B2 (en) 2003-04-22
JP2002057409A (ja) 2002-02-22
US20030017662A1 (en) 2003-01-23
EP1168541B1 (de) 2004-12-01
DE60107494T2 (de) 2005-12-08
EP1168541A2 (de) 2002-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition