DE60101481D1 - Veränderung von layout-daten einer maske zur verbesserung des erzeugten musters - Google Patents

Veränderung von layout-daten einer maske zur verbesserung des erzeugten musters

Info

Publication number
DE60101481D1
DE60101481D1 DE60101481T DE60101481T DE60101481D1 DE 60101481 D1 DE60101481 D1 DE 60101481D1 DE 60101481 T DE60101481 T DE 60101481T DE 60101481 T DE60101481 T DE 60101481T DE 60101481 D1 DE60101481 D1 DE 60101481D1
Authority
DE
Germany
Prior art keywords
modifying
mask
improve
layout data
generated pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60101481T
Other languages
English (en)
Other versions
DE60101481T2 (de
Inventor
Ramkumar Subramanian
A Phan
Bhanwar Singh
Bharath Rangarajan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE60101481D1 publication Critical patent/DE60101481D1/de
Application granted granted Critical
Publication of DE60101481T2 publication Critical patent/DE60101481T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
DE60101481T 2000-06-16 2001-04-19 Veränderung von layout-daten einer maske zur verbesserung des erzeugten musters Expired - Lifetime DE60101481T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US596954 1996-02-05
US09/596,954 US6444373B1 (en) 2000-06-16 2000-06-16 Modification of mask layout data to improve mask fidelity
PCT/US2001/012853 WO2001098830A2 (en) 2000-06-16 2001-04-19 Modification of mask layout data to improve mask fidelity

Publications (2)

Publication Number Publication Date
DE60101481D1 true DE60101481D1 (de) 2004-01-22
DE60101481T2 DE60101481T2 (de) 2004-10-14

Family

ID=24389425

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60101481T Expired - Lifetime DE60101481T2 (de) 2000-06-16 2001-04-19 Veränderung von layout-daten einer maske zur verbesserung des erzeugten musters

Country Status (5)

Country Link
US (2) US6444373B1 (de)
EP (1) EP1290496B1 (de)
AU (1) AU2001257130A1 (de)
DE (1) DE60101481T2 (de)
WO (1) WO2001098830A2 (de)

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JP4580529B2 (ja) * 2000-09-26 2010-11-17 大日本印刷株式会社 半導体回路の設計パタンデータ補正方法と、補正された設計パタンデータを用いたフォトマスク、該フォトマスクの検査方法およびフォトマスク検査用パタンデータ作製方法
US6673638B1 (en) * 2001-11-14 2004-01-06 Kla-Tencor Corporation Method and apparatus for the production of process sensitive lithographic features
US6691052B1 (en) * 2002-01-30 2004-02-10 Kla-Tencor Corporation Apparatus and methods for generating an inspection reference pattern
US7302672B2 (en) * 2002-07-12 2007-11-27 Cadence Design Systems, Inc. Method and system for context-specific mask writing
WO2004008246A2 (en) 2002-07-12 2004-01-22 Cadence Design Systems, Inc. Method and system for context-specific mask writing
WO2004008245A2 (en) * 2002-07-12 2004-01-22 Cadence Design Systems, Inc. Method and system for context-specific mask inspection
US6792592B2 (en) * 2002-08-30 2004-09-14 Numerical Technologies, Inc. Considering mask writer properties during the optical proximity correction process
JP4040515B2 (ja) * 2003-03-26 2008-01-30 株式会社東芝 マスクのセット、マスクデータ作成方法及びパターン形成方法
US6973637B2 (en) * 2003-05-12 2005-12-06 Agere Systems Inc. Process for the selective control of feature size in lithographic processing
US7318214B1 (en) 2003-06-19 2008-01-08 Invarium, Inc. System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections
EP1644855A4 (de) * 2003-07-14 2007-08-01 Cadence Design Systems Inc Verfahren zur erzeugung von strukturen zur herstellung integrierter schaltungen
US7024638B2 (en) * 2003-07-14 2006-04-04 Cadence Design Systems, Inc. Method for creating patterns for producing integrated circuits
US7261982B2 (en) * 2003-08-07 2007-08-28 Jds Uniphase Corporation Planar circuit optimization
US7266800B2 (en) * 2004-06-04 2007-09-04 Invarium, Inc. Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes
CN101073084A (zh) * 2004-10-05 2007-11-14 凸版光掩膜公司 分析光掩模几何图形的系统和方法
US7588868B2 (en) * 2004-10-06 2009-09-15 Cadence Design Systems, Inc. Method and system for reducing the impact of across-wafer variations on critical dimension measurements
US7345738B2 (en) * 2004-12-03 2008-03-18 Asml Netherlands B.V. Certified cells and method of using certified cells for fabricating a device
US7539969B2 (en) * 2005-05-10 2009-05-26 Lam Research Corporation Computer readable mask shrink control processor
US7465525B2 (en) * 2005-05-10 2008-12-16 Lam Research Corporation Reticle alignment and overlay for multiple reticle process
US7392503B2 (en) * 2005-07-20 2008-06-24 Winbond Electronics Corp. Method of correcting mask pattern
US20070143234A1 (en) * 2005-12-16 2007-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for intelligent model-based optical proximity correction (OPC)
WO2008078213A1 (en) * 2006-12-21 2008-07-03 Nxp B.V. A method and system for identifying weak points in an integrated circuit design
US20080241709A1 (en) * 2007-04-02 2008-10-02 Kent Nakagawa System And Method For analyzing photomask Geometries
JP5137444B2 (ja) * 2007-04-04 2013-02-06 株式会社日立ハイテクノロジーズ Ｏｐｃモデリング構築方法、情報処理装置、及び半導体デバイスのプロセス条件を決定する方法
DE102009007770A1 (de) * 2009-02-05 2010-08-12 Carl Zeiss Sms Gmbh Verfahren zur Bestimmung von Korrekturen für Elektronenstrahl-Maskenschreiber
US8103984B1 (en) * 2009-02-23 2012-01-24 Cadence Design Systems, Inc. System and method for compressed design phase contour data
US7944545B2 (en) * 2009-05-11 2011-05-17 International Business Machines Corporation High contrast lithographic masks
CN103309150B (zh) * 2013-06-26 2015-06-17 上海华力微电子有限公司 版图数据的处理方法
US9007719B1 (en) 2013-10-23 2015-04-14 Western Digital (Fremont), Llc Systems and methods for using double mask techniques to achieve very small features
WO2018125115A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Accounting for mask manufacturing infidelities in semiconductor devices
US11435660B2 (en) * 2017-11-22 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask and method of fabricating a photomask

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US5600734A (en) * 1991-10-04 1997-02-04 Fujitsu Limited Electron beam tester
JP3334441B2 (ja) * 1995-08-01 2002-10-15 ソニー株式会社 フォトマスク描画用パターンデータ補正方法と補正装置
JP3454983B2 (ja) * 1995-08-25 2003-10-06 株式会社東芝 荷電ビーム描画方法
US5723233A (en) 1996-02-27 1998-03-03 Lsi Logic Corporation Optical proximity correction method and apparatus
US5740068A (en) 1996-05-30 1998-04-14 International Business Machines Corporation Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction
JP3551660B2 (ja) * 1996-10-29 2004-08-11 ソニー株式会社 露光パターンの補正方法および露光パターンの補正装置および露光方法
US5821014A (en) 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
US5858591A (en) 1998-02-02 1999-01-12 Taiwan Semiconductor Manufacturing Company Ltd. Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging
JP2000020564A (ja) * 1998-06-29 2000-01-21 Mitsubishi Electric Corp レイアウトパターンデータ補正装置、レイアウトパターンデータ補正方法、その補正方法を用いた半導体装置の製造方法、および、半導体装置の製造プログラムを記録した記録媒体
US6330708B1 (en) * 1998-09-17 2001-12-11 International Business Machines Corporation Method for preparing command files for photomask production

Also Published As

Publication number Publication date
WO2001098830A3 (en) 2002-07-25
WO2001098830A2 (en) 2001-12-27
EP1290496A2 (de) 2003-03-12
US6444373B1 (en) 2002-09-03
EP1290496B1 (de) 2003-12-10
US20020160281A1 (en) 2002-10-31
AU2001257130A1 (en) 2002-01-02
DE60101481T2 (de) 2004-10-14
US6579651B2 (en) 2003-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES INC. MAPLES CORPORATE SERVICES, KY