DE60042008D1 - Herstellungsverfahren für dünnfilm-transistoren - Google Patents

Herstellungsverfahren für dünnfilm-transistoren

Info

Publication number
DE60042008D1
DE60042008D1 DE60042008T DE60042008T DE60042008D1 DE 60042008 D1 DE60042008 D1 DE 60042008D1 DE 60042008 T DE60042008 T DE 60042008T DE 60042008 T DE60042008 T DE 60042008T DE 60042008 D1 DE60042008 D1 DE 60042008D1
Authority
DE
Germany
Prior art keywords
thin film
manufacturing process
film transistors
transistors
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60042008T
Other languages
English (en)
Inventor
Peter Green
Martin J Powell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chi Mei Optoelectronics Corp
Original Assignee
Chi Mei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chi Mei Optoelectronics Corp filed Critical Chi Mei Optoelectronics Corp
Application granted granted Critical
Publication of DE60042008D1 publication Critical patent/DE60042008D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
DE60042008T 1999-08-24 2000-08-23 Herstellungsverfahren für dünnfilm-transistoren Expired - Lifetime DE60042008D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9919913.5A GB9919913D0 (en) 1999-08-24 1999-08-24 Thin-film transistors and method for producing the same
PCT/EP2000/008267 WO2001015234A1 (en) 1999-08-24 2000-08-23 Thin-film transistors and method for producing the same

Publications (1)

Publication Number Publication Date
DE60042008D1 true DE60042008D1 (de) 2009-05-28

Family

ID=10859638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60042008T Expired - Lifetime DE60042008D1 (de) 1999-08-24 2000-08-23 Herstellungsverfahren für dünnfilm-transistoren

Country Status (8)

Country Link
US (2) US6403408B1 (de)
EP (1) EP1129488B1 (de)
JP (1) JP4880846B2 (de)
KR (1) KR100681895B1 (de)
DE (1) DE60042008D1 (de)
GB (1) GB9919913D0 (de)
TW (1) TW508828B (de)
WO (1) WO2001015234A1 (de)

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US6710409B1 (en) * 2002-10-15 2004-03-23 Matrix Semiconductor, Inc. Inverted staggered thin film transistor with etch stop layer and method of making same
US7190000B2 (en) * 2003-08-11 2007-03-13 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
TWI236153B (en) * 2004-01-05 2005-07-11 Quanta Display Inc Method for fabricating self-aligned TFT
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TWI366701B (en) 2004-01-26 2012-06-21 Semiconductor Energy Lab Method of manufacturing display and television
JP4884675B2 (ja) * 2004-01-26 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1324665C (zh) * 2004-03-29 2007-07-04 广辉电子股份有限公司 自对准式薄膜晶体管的制造方法
TWI256515B (en) * 2004-04-06 2006-06-11 Quanta Display Inc Structure of LTPS-TFT and fabricating method thereof
US7547647B2 (en) * 2004-07-06 2009-06-16 Hewlett-Packard Development Company, L.P. Method of making a structure
US7527994B2 (en) * 2004-09-01 2009-05-05 Honeywell International Inc. Amorphous silicon thin-film transistors and methods of making the same
US7344928B2 (en) 2005-07-28 2008-03-18 Palo Alto Research Center Incorporated Patterned-print thin-film transistors with top gate geometry
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KR101506264B1 (ko) * 2008-06-13 2015-03-30 삼성전자주식회사 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법
KR101472771B1 (ko) * 2008-12-01 2014-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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JP2010245480A (ja) * 2009-04-10 2010-10-28 Hitachi Displays Ltd 表示装置
JP5429454B2 (ja) * 2009-04-17 2014-02-26 ソニー株式会社 薄膜トランジスタの製造方法および薄膜トランジスタ
US9401431B2 (en) * 2009-04-21 2016-07-26 Cbrite Inc. Double self-aligned metal oxide TFT
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
US8273600B2 (en) * 2009-04-21 2012-09-25 Chan-Long Shieh Self-aligned metal oxide TFT with reduced number of masks
TWI626731B (zh) 2009-08-07 2018-06-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5500907B2 (ja) * 2009-08-21 2014-05-21 株式会社日立製作所 半導体装置およびその製造方法
KR101248459B1 (ko) * 2009-11-10 2013-03-28 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
CN102130009B (zh) * 2010-12-01 2012-12-05 北京大学深圳研究生院 一种晶体管的制造方法
CN102122620A (zh) * 2011-01-18 2011-07-13 北京大学深圳研究生院 一种自对准薄膜晶体管的制作方法
US8569121B2 (en) 2011-11-01 2013-10-29 International Business Machines Corporation Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
CN102779785A (zh) * 2012-07-25 2012-11-14 京东方科技集团股份有限公司 有机薄膜晶体管阵列基板及其制备方法和显示装置
CN104103696B (zh) * 2013-04-15 2018-02-27 清华大学 双极性薄膜晶体管
TWI548924B (zh) * 2013-06-04 2016-09-11 群創光電股份有限公司 顯示面板以及顯示裝置
KR102194235B1 (ko) 2013-09-05 2020-12-22 삼성전자주식회사 박막 트랜지스터 및 그 구동 방법
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Also Published As

Publication number Publication date
WO2001015234A1 (en) 2001-03-01
GB9919913D0 (en) 1999-10-27
EP1129488A1 (de) 2001-09-05
JP4880846B2 (ja) 2012-02-22
JP2003508899A (ja) 2003-03-04
US6504182B2 (en) 2003-01-07
US6403408B1 (en) 2002-06-11
KR20010080289A (ko) 2001-08-22
EP1129488B1 (de) 2009-04-15
KR100681895B1 (ko) 2007-02-15
TW508828B (en) 2002-11-01
US20020084465A1 (en) 2002-07-04

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