DE60041170D1 - Nicht absorbierende Fotomaske und Verfahren zu ihrer Herstellung - Google Patents

Nicht absorbierende Fotomaske und Verfahren zu ihrer Herstellung

Info

Publication number
DE60041170D1
DE60041170D1 DE60041170T DE60041170T DE60041170D1 DE 60041170 D1 DE60041170 D1 DE 60041170D1 DE 60041170 T DE60041170 T DE 60041170T DE 60041170 T DE60041170 T DE 60041170T DE 60041170 D1 DE60041170 D1 DE 60041170D1
Authority
DE
Germany
Prior art keywords
photomask
absorbent
making
same
absorbent photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60041170T
Other languages
English (en)
Inventor
Andrew W Mccullough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Application granted granted Critical
Publication of DE60041170D1 publication Critical patent/DE60041170D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
DE60041170T 1999-10-25 2000-10-20 Nicht absorbierende Fotomaske und Verfahren zu ihrer Herstellung Expired - Fee Related DE60041170D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/426,250 US6444372B1 (en) 1999-10-25 1999-10-25 Non absorbing reticle and method of making same

Publications (1)

Publication Number Publication Date
DE60041170D1 true DE60041170D1 (de) 2009-02-05

Family

ID=23689989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041170T Expired - Fee Related DE60041170D1 (de) 1999-10-25 2000-10-20 Nicht absorbierende Fotomaske und Verfahren zu ihrer Herstellung

Country Status (6)

Country Link
US (4) US6444372B1 (de)
EP (2) EP2034359A2 (de)
JP (1) JP4194746B2 (de)
KR (1) KR100675782B1 (de)
CA (1) CA2322412A1 (de)
DE (1) DE60041170D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627355B2 (en) * 1999-07-20 2003-09-30 Advanced Micro Devices, Inc. Method of and system for improving stability of photomasks
US6444372B1 (en) * 1999-10-25 2002-09-03 Svg Lithography Systems, Inc. Non absorbing reticle and method of making same
JP3923368B2 (ja) * 2002-05-22 2007-05-30 シャープ株式会社 半導体素子の製造方法
US7541115B1 (en) * 2004-11-15 2009-06-02 Kla-Tencor Technologies Corporation Use of calcium fluoride substrate for lithography masks
US7604906B1 (en) 2005-09-21 2009-10-20 Kla- Tencor Technologies Corporation Films for prevention of crystal growth on fused silica substrates for semiconductor lithography
US7495666B2 (en) * 2005-12-29 2009-02-24 Microsoft Corporation Intelligent graph range for computer algebra system
JP2008098263A (ja) * 2006-10-10 2008-04-24 Canon Inc 近接場露光用マスク及び該マスクを用いたレジストパターンの形成方法
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9454073B2 (en) * 2014-02-10 2016-09-27 SK Hynix Inc. Photomask blank and photomask for suppressing heat absorption
JP2017054105A (ja) 2015-09-11 2017-03-16 旭硝子株式会社 マスクブランク
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
EP3707746B1 (de) 2017-11-11 2023-12-27 Micromaterials LLC Gaszufuhrsystem für hochdruckprozesskammer
CN111656510A (zh) * 2018-02-22 2020-09-11 应用材料公司 处理掩模基板以实现更佳的膜质量的方法
KR20230079236A (ko) 2018-03-09 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 금속 함유 재료들을 위한 고압 어닐링 프로세스
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1583459A (en) * 1977-12-20 1981-01-28 Philips Electronic Associated Masks their manufacture and the manufacture of microminiature solid-state devices using such masks
US4411972A (en) 1981-12-30 1983-10-25 International Business Machines Corporation Integrated circuit photomask
US4592081A (en) 1984-02-10 1986-05-27 Varian Associates, Inc. Adaptive X-ray lithography mask
JPH0797216B2 (ja) 1986-10-29 1995-10-18 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション マスクの製造方法
EP0456479B1 (de) 1990-05-09 2001-01-31 Canon Kabushiki Kaisha Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster
JP2759582B2 (ja) 1991-09-05 1998-05-28 三菱電機株式会社 フォトマスクおよびその製造方法
JPH05281698A (ja) 1992-03-31 1993-10-29 Mitsubishi Electric Corp フォトマスク及びパターン転写方法
KR960015792B1 (ko) * 1993-06-10 1996-11-21 현대전자산업 주식회사 반도체 소자의 패턴형성용 마스크 제조방법
KR960035589U (ko) * 1995-04-12 1996-11-21 알루미늄 패턴을 구비한 마스크
US6165649A (en) * 1997-01-21 2000-12-26 International Business Machines Corporation Methods for repair of photomasks
US6048652A (en) * 1998-12-04 2000-04-11 Advanced Micro Devices, Inc. Backside polish EUV mask and method of manufacture
US6037083A (en) * 1998-12-22 2000-03-14 Hoya Corporation Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
US6187484B1 (en) * 1999-08-31 2001-02-13 Micron Technology, Inc. Irradiation mask
US6444372B1 (en) * 1999-10-25 2002-09-03 Svg Lithography Systems, Inc. Non absorbing reticle and method of making same

Also Published As

Publication number Publication date
US7014963B2 (en) 2006-03-21
JP2001166453A (ja) 2001-06-22
KR20010051185A (ko) 2001-06-25
EP1096312B1 (de) 2008-12-24
US20050025279A1 (en) 2005-02-03
EP1096312A1 (de) 2001-05-02
CA2322412A1 (en) 2001-04-25
US20040131954A1 (en) 2004-07-08
US20020182519A1 (en) 2002-12-05
EP2034359A2 (de) 2009-03-11
US7029804B2 (en) 2006-04-18
JP4194746B2 (ja) 2008-12-10
US6444372B1 (en) 2002-09-03
KR100675782B1 (ko) 2007-01-29
US6686101B2 (en) 2004-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee