DE60020163D1 - Fotomaske, verfahren zu ihrer herstellung - Google Patents

Fotomaske, verfahren zu ihrer herstellung

Info

Publication number
DE60020163D1
DE60020163D1 DE60020163T DE60020163T DE60020163D1 DE 60020163 D1 DE60020163 D1 DE 60020163D1 DE 60020163 T DE60020163 T DE 60020163T DE 60020163 T DE60020163 T DE 60020163T DE 60020163 D1 DE60020163 D1 DE 60020163D1
Authority
DE
Germany
Prior art keywords
photomask
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60020163T
Other languages
English (en)
Other versions
DE60020163T2 (de
Inventor
Akio Misaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60020163D1 publication Critical patent/DE60020163D1/de
Application granted granted Critical
Publication of DE60020163T2 publication Critical patent/DE60020163T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
DE60020163T 1999-11-08 2000-11-02 Fotomaske, verfahren zu ihrer herstellung Expired - Lifetime DE60020163T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31675299 1999-11-08
JP31675299 1999-11-08
PCT/JP2000/007772 WO2001035166A1 (en) 1999-11-08 2000-11-02 Photomask, method of producing photomask, and method of making pattern using photomask

Publications (2)

Publication Number Publication Date
DE60020163D1 true DE60020163D1 (de) 2005-06-16
DE60020163T2 DE60020163T2 (de) 2005-10-20

Family

ID=18080534

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60020163T Expired - Lifetime DE60020163T2 (de) 1999-11-08 2000-11-02 Fotomaske, verfahren zu ihrer herstellung

Country Status (8)

Country Link
US (4) US6703168B1 (de)
EP (3) EP1241523B1 (de)
JP (1) JP3708875B2 (de)
KR (2) KR100553070B1 (de)
CN (2) CN1209683C (de)
DE (1) DE60020163T2 (de)
TW (1) TW466584B (de)
WO (1) WO2001035166A1 (de)

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US8204082B2 (en) * 2000-06-23 2012-06-19 Cloudshield Technologies, Inc. Transparent provisioning of services over a network
JP3708877B2 (ja) 2001-05-01 2005-10-19 松下電器産業株式会社 フォトマスク
US7060398B2 (en) * 2001-12-26 2006-06-13 Matsushita Electric Industrial Co., Ltd. Photomask, method for producing the same, and method for forming pattern using the photomask
US6944844B2 (en) * 2002-04-03 2005-09-13 Synopsys, Inc. System and method to determine impact of line end shortening
KR100468741B1 (ko) * 2002-06-22 2005-01-29 삼성전자주식회사 노광 장치의 어퍼처 설계를 위한 시뮬레이션 방법 및장치, 그리고 시뮬레이션 방법을 기록한 기록매체
KR100604814B1 (ko) * 2002-11-11 2006-07-28 삼성전자주식회사 위상 에지 위상 반전 마스크 및 그 제조방법
US7147975B2 (en) 2003-02-17 2006-12-12 Matsushita Electric Industrial Co., Ltd. Photomask
US7842436B2 (en) * 2003-10-23 2010-11-30 Panasonic Corporation Photomask
JP4479486B2 (ja) 2004-11-30 2010-06-09 ソニー株式会社 マスクパターンの補正方法
JP4574343B2 (ja) * 2004-12-15 2010-11-04 三星電子株式会社 位相シフトマスク及びパターン形成方法
JP4728676B2 (ja) * 2005-03-30 2011-07-20 富士通セミコンダクター株式会社 フォトマスクの製造方法、及びそのフォトマスクを用いた半導体装置の製造方法
JP4791198B2 (ja) * 2006-02-03 2011-10-12 パナソニック株式会社 フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
JP4324220B2 (ja) * 2006-03-06 2009-09-02 パナソニック株式会社 フォトマスク、その作成方法、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
EP1992988A4 (de) * 2006-03-09 2011-12-28 Panasonic Corp Photomaske, verfahren zur herstellung einer solchen photomaske und musterbildungsverfahren mit einer solchen photomaske
KR100811270B1 (ko) * 2006-09-19 2008-03-07 주식회사 하이닉스반도체 단일 포토마스크를 이용한 패턴 형성방법
JP2008083189A (ja) * 2006-09-26 2008-04-10 Matsushita Electric Ind Co Ltd 位相シフトマスクおよび集光素子の製造方法
US7636904B2 (en) * 2006-10-20 2009-12-22 Synopsys, Inc. Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities
US7838173B2 (en) * 2006-12-01 2010-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure design and fabrication on photomask for contact hole manufacturing process window enhancement
KR100945919B1 (ko) * 2007-02-21 2010-03-05 주식회사 하이닉스반도체 반도체 소자의 포토마스크 형성방법
JP2009053575A (ja) * 2007-08-29 2009-03-12 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
US20090063448A1 (en) * 2007-08-29 2009-03-05 Microsoft Corporation Aggregated Search Results for Local and Remote Services
JP2009058877A (ja) 2007-09-03 2009-03-19 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP2009075207A (ja) * 2007-09-19 2009-04-09 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP4968011B2 (ja) * 2007-11-19 2012-07-04 セイコーエプソン株式会社 半導体装置
CA2787249C (en) 2009-01-29 2017-09-12 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
CN102566291B (zh) * 2010-12-29 2015-04-29 中芯国际集成电路制造(上海)有限公司 投影掩膜版的测试系统
JP5605917B2 (ja) * 2011-12-27 2014-10-15 Ｈｏｙａ株式会社 フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法
US8499263B1 (en) * 2012-03-29 2013-07-30 Mentor Graphics Corporation Encrypted profiles for parasitic extraction
JP6093117B2 (ja) * 2012-06-01 2017-03-08 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
KR20150028109A (ko) * 2013-09-05 2015-03-13 삼성디스플레이 주식회사 노광용 마스크, 이의 제조방법 및 이를 이용한 표시패널의 제조방법
TWI787548B (zh) * 2018-10-22 2022-12-21 日商Ｈｏｙａ股份有限公司 光罩、光罩之製造方法及電子元件之製造方法
CN110308615A (zh) * 2019-05-27 2019-10-08 武汉华星光电半导体显示技术有限公司 光罩结构

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JPH03177841A (ja) 1989-12-06 1991-08-01 Oki Electric Ind Co Ltd ネガ型レジスト用ホトマスク
EP0401795A3 (de) * 1989-06-08 1991-03-27 Oki Electric Industry Company, Limited Phasenverschiebungs-Photomaske für negative Lacke und Verfahren zur Herstellung von isolierten negativen Resistbildern mit dieser Phasenverschiebungsmaske
JPH0311345A (ja) * 1989-06-08 1991-01-18 Oki Electric Ind Co Ltd ホトマスク及びこれを用いたパターン形成方法
JPH05142751A (ja) 1991-11-18 1993-06-11 Nec Corp フオトマスクおよび投影露光方法
US5354632A (en) * 1992-04-15 1994-10-11 Intel Corporation Lithography using a phase-shifting reticle with reduced transmittance
JPH05333524A (ja) 1992-06-04 1993-12-17 Nec Corp 位相シフトマスクおよびその製造方法
JP3322284B2 (ja) 1993-08-31 2002-09-09 凸版印刷株式会社 位相シフトマスク及びその製造方法
JP3290862B2 (ja) * 1994-09-29 2002-06-10 株式会社東芝 フォトマスクとこのフォトマスクを用いた露光方法及びこのフォトマスクの製造方法
WO1996033404A1 (en) * 1995-04-21 1996-10-24 Mine Safety Appliances Company Electrochemical gas sensor for the detection of nitrogen dioxide
JPH0934099A (ja) 1995-07-25 1997-02-07 Hoya Corp 位相シフトマスク及びその製造方法
US5718829A (en) * 1995-09-01 1998-02-17 Micron Technology, Inc. Phase shift structure and method of fabrication
KR0179164B1 (ko) * 1995-09-25 1999-04-01 문정환 위상 반전 마스크의 제조방법
JP2917879B2 (ja) 1995-10-31 1999-07-12 日本電気株式会社 フォトマスク及びその製造方法
JPH09127676A (ja) 1995-11-06 1997-05-16 Seiko Epson Corp ホトマスク及び半導体装置の製造方法
JPH09329888A (ja) 1996-06-12 1997-12-22 Oki Electric Ind Co Ltd 位相シフトマスクパターン
KR980010610A (ko) * 1996-07-31 1998-04-30 문정환 위상반전마스크의 구조 및 제조방법
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
JP3070520B2 (ja) 1997-05-26 2000-07-31 日本電気株式会社 フォトマスク及び露光方法
US6106979A (en) * 1997-12-30 2000-08-22 Micron Technology, Inc. Use of attenuating phase-shifting mask for improved printability of clear-field patterns
US6083275A (en) * 1998-01-09 2000-07-04 International Business Machines Corporation Optimized phase shift design migration
JP3466488B2 (ja) 1998-09-29 2003-11-10 シャープ株式会社 フォトマスク
US6044007A (en) * 1999-03-24 2000-03-28 Advanced Micro Devices, Inc. Modification of mask layout data to improve writeability of OPC

Also Published As

Publication number Publication date
JP3708875B2 (ja) 2005-10-19
KR20030075184A (ko) 2003-09-22
US7205077B2 (en) 2007-04-17
WO2001035166A1 (en) 2001-05-17
EP1542072A2 (de) 2005-06-15
US20070224542A1 (en) 2007-09-27
US7468240B2 (en) 2008-12-23
EP1241523A1 (de) 2002-09-18
KR20030008211A (ko) 2003-01-24
US20060121367A1 (en) 2006-06-08
KR100553069B1 (ko) 2006-02-15
EP1241523A4 (de) 2003-01-07
US20040081899A1 (en) 2004-04-29
US7001711B2 (en) 2006-02-21
EP1241523B1 (de) 2005-05-11
CN1209683C (zh) 2005-07-06
EP1542073A2 (de) 2005-06-15
KR100553070B1 (ko) 2006-02-15
DE60020163T2 (de) 2005-10-20
CN1661480A (zh) 2005-08-31
CN1373861A (zh) 2002-10-09
EP1542072A3 (de) 2009-02-18
TW466584B (en) 2001-12-01
EP1542073A3 (de) 2009-02-18
US6703168B1 (en) 2004-03-09

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Legal Events

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8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP