DE60016938D1 - Trocknungssystem unter verwendung einer überkritischen flüssigkeit - Google Patents
Trocknungssystem unter verwendung einer überkritischen flüssigkeitInfo
- Publication number
- DE60016938D1 DE60016938D1 DE60016938T DE60016938T DE60016938D1 DE 60016938 D1 DE60016938 D1 DE 60016938D1 DE 60016938 T DE60016938 T DE 60016938T DE 60016938 T DE60016938 T DE 60016938T DE 60016938 D1 DE60016938 D1 DE 60016938D1
- Authority
- DE
- Germany
- Prior art keywords
- pressure vessel
- cover
- drying system
- vessel
- processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/008—Processes carried out under supercritical conditions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US632770 | 1984-07-20 | ||
US15545499P | 1999-09-20 | 1999-09-20 | |
US155454P | 1999-09-20 | ||
US09/632,770 US6508259B1 (en) | 1999-08-05 | 2000-08-04 | Inverted pressure vessel with horizontal through loading |
PCT/US2000/025726 WO2001022016A1 (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60016938D1 true DE60016938D1 (de) | 2005-01-27 |
DE60016938T2 DE60016938T2 (de) | 2005-12-15 |
Family
ID=26852346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60016938T Expired - Fee Related DE60016938T2 (de) | 1999-09-20 | 2000-09-20 | Trocknungssystem unter verwendung einer überkritischen flüssigkeit |
Country Status (10)
Country | Link |
---|---|
US (1) | US6508259B1 (de) |
EP (1) | EP1214555B1 (de) |
JP (1) | JP2003510801A (de) |
KR (1) | KR20020060182A (de) |
CN (1) | CN1127653C (de) |
AT (1) | ATE285555T1 (de) |
AU (1) | AU7593900A (de) |
DE (1) | DE60016938T2 (de) |
IL (1) | IL148424A0 (de) |
WO (1) | WO2001022016A1 (de) |
Families Citing this family (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW499696B (en) * | 1999-04-27 | 2002-08-21 | Tokyo Electron Ltd | Processing apparatus and processing method |
US6748960B1 (en) * | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
EP1234322A2 (de) * | 1999-11-02 | 2002-08-28 | Tokyo Electron Limited | Verfahren und vorrichtungen zur überkritischen verarbeitung von werkstücken |
US6415804B1 (en) * | 1999-12-23 | 2002-07-09 | Lam Research Corporation | Bowl for processing semiconductor wafers |
US20040003831A1 (en) * | 2000-04-18 | 2004-01-08 | Mount David J. | Supercritical fluid cleaning process for precision surfaces |
AU2001255656A1 (en) * | 2000-04-25 | 2001-11-07 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
KR100750018B1 (ko) * | 2000-07-26 | 2007-08-16 | 동경 엘렉트론 주식회사 | 반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치 |
EP1358021A4 (de) * | 2000-08-04 | 2004-03-31 | S C Fluids Inc | Invertierter druckbehälter mit abgeschirmtem schliessmechanismus |
US20020189543A1 (en) * | 2001-04-10 | 2002-12-19 | Biberger Maximilian A. | High pressure processing chamber for semiconductor substrate including flow enhancing features |
US20040040660A1 (en) * | 2001-10-03 | 2004-03-04 | Biberger Maximilian Albert | High pressure processing chamber for multiple semiconductor substrates |
US7028698B2 (en) * | 2001-12-28 | 2006-04-18 | Brian Nils Hansen | Pressure processing apparatus with improved heating and closure system |
AU2003215238A1 (en) * | 2002-02-15 | 2003-09-09 | Supercritical Systems Inc. | Pressure enchanced diaphragm valve |
US7387868B2 (en) * | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
US6880560B2 (en) | 2002-11-18 | 2005-04-19 | Techsonic | Substrate processing apparatus for processing substrates using dense phase gas and sonic waves |
DE10255231B4 (de) * | 2002-11-26 | 2006-02-02 | Uhde High Pressure Technologies Gmbh | Hochdruckvorrichtung zum Verschließen eines Druckbehälters im Reinraum |
US7021635B2 (en) * | 2003-02-06 | 2006-04-04 | Tokyo Electron Limited | Vacuum chuck utilizing sintered material and method of providing thereof |
US7077917B2 (en) * | 2003-02-10 | 2006-07-18 | Tokyo Electric Limited | High-pressure processing chamber for a semiconductor wafer |
US7270137B2 (en) * | 2003-04-28 | 2007-09-18 | Tokyo Electron Limited | Apparatus and method of securing a workpiece during high-pressure processing |
US20050034660A1 (en) * | 2003-08-11 | 2005-02-17 | Supercritical Systems, Inc. | Alignment means for chamber closure to reduce wear on surfaces |
US20050035514A1 (en) * | 2003-08-11 | 2005-02-17 | Supercritical Systems, Inc. | Vacuum chuck apparatus and method for holding a wafer during high pressure processing |
CN100363241C (zh) * | 2004-04-29 | 2008-01-23 | 家登精密工业股份有限公司 | 传送盒的填充装置 |
US7250374B2 (en) * | 2004-06-30 | 2007-07-31 | Tokyo Electron Limited | System and method for processing a substrate using supercritical carbon dioxide processing |
US7445015B2 (en) * | 2004-09-30 | 2008-11-04 | Lam Research Corporation | Cluster tool process chamber having integrated high pressure and vacuum chambers |
US20060065288A1 (en) * | 2004-09-30 | 2006-03-30 | Darko Babic | Supercritical fluid processing system having a coating on internal members and a method of using |
US20060065189A1 (en) * | 2004-09-30 | 2006-03-30 | Darko Babic | Method and system for homogenization of supercritical fluid in a high pressure processing system |
US7491036B2 (en) * | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
US20060102208A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | System for removing a residue from a substrate using supercritical carbon dioxide processing |
US20060102590A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry |
US20060102591A1 (en) * | 2004-11-12 | 2006-05-18 | Tokyo Electron Limited | Method and system for treating a substrate using a supercritical fluid |
US20060102282A1 (en) * | 2004-11-15 | 2006-05-18 | Supercritical Systems, Inc. | Method and apparatus for selectively filtering residue from a processing chamber |
US20060130966A1 (en) * | 2004-12-20 | 2006-06-22 | Darko Babic | Method and system for flowing a supercritical fluid in a high pressure processing system |
US20060134332A1 (en) * | 2004-12-22 | 2006-06-22 | Darko Babic | Precompressed coating of internal members in a supercritical fluid processing system |
US20060135047A1 (en) * | 2004-12-22 | 2006-06-22 | Alexei Sheydayi | Method and apparatus for clamping a substrate in a high pressure processing system |
US7140393B2 (en) * | 2004-12-22 | 2006-11-28 | Tokyo Electron Limited | Non-contact shuttle valve for flow diversion in high pressure systems |
US7434590B2 (en) * | 2004-12-22 | 2008-10-14 | Tokyo Electron Limited | Method and apparatus for clamping a substrate in a high pressure processing system |
US7435447B2 (en) * | 2005-02-15 | 2008-10-14 | Tokyo Electron Limited | Method and system for determining flow conditions in a high pressure processing system |
US20060180572A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Removal of post etch residue for a substrate with open metal surfaces |
US20060180174A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator |
US7291565B2 (en) * | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
JP4559250B2 (ja) * | 2005-02-16 | 2010-10-06 | シチズンファインテックミヨタ株式会社 | アクチュエータ、及びその製造方法 |
US7380984B2 (en) * | 2005-03-28 | 2008-06-03 | Tokyo Electron Limited | Process flow thermocouple |
US7767145B2 (en) * | 2005-03-28 | 2010-08-03 | Toyko Electron Limited | High pressure fourier transform infrared cell |
US20060226117A1 (en) * | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US20060225772A1 (en) * | 2005-03-29 | 2006-10-12 | Jones William D | Controlled pressure differential in a high-pressure processing chamber |
US7494107B2 (en) * | 2005-03-30 | 2009-02-24 | Supercritical Systems, Inc. | Gate valve for plus-atmospheric pressure semiconductor process vessels |
US20060225769A1 (en) * | 2005-03-30 | 2006-10-12 | Gentaro Goshi | Isothermal control of a process chamber |
DK1885827T3 (en) * | 2005-04-29 | 2016-08-29 | Univ Michigan Regents | METHOD OF LUBRICATING METAL BASED ON OVERCritical CARBON Dioxide |
US20060255012A1 (en) * | 2005-05-10 | 2006-11-16 | Gunilla Jacobson | Removal of particles from substrate surfaces using supercritical processing |
US7789971B2 (en) * | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
US7524383B2 (en) * | 2005-05-25 | 2009-04-28 | Tokyo Electron Limited | Method and system for passivating a processing chamber |
US20070012337A1 (en) * | 2005-07-15 | 2007-01-18 | Tokyo Electron Limited | In-line metrology for supercritical fluid processing |
JP5303992B2 (ja) * | 2008-03-31 | 2013-10-02 | パナソニック株式会社 | 加熱装置 |
CN101433562B (zh) * | 2008-12-17 | 2011-09-07 | 中国林业科学研究院林产化学工业研究所 | 用超临界流体干燥制备银杏叶提取物粉末的方法及其装置 |
JP5477131B2 (ja) * | 2010-04-08 | 2014-04-23 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5985156B2 (ja) * | 2011-04-04 | 2016-09-06 | 東京エレクトロン株式会社 | 半導体基板の超臨界乾燥方法及び装置 |
US9275852B2 (en) * | 2012-05-31 | 2016-03-01 | Semes Co., Ltd. | Substrate treating apparatus and substrate treating method |
US9587880B2 (en) * | 2012-05-31 | 2017-03-07 | Semes Co., Ltd. | Apparatus and method for drying substrate |
JP6068029B2 (ja) | 2012-07-18 | 2017-01-25 | 株式会社東芝 | 基板処理方法、基板処理装置および記憶媒体 |
TWI826650B (zh) | 2012-11-26 | 2023-12-21 | 美商應用材料股份有限公司 | 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理 |
KR102037844B1 (ko) | 2013-03-12 | 2019-11-27 | 삼성전자주식회사 | 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 |
CN103363783B (zh) * | 2013-07-15 | 2014-12-10 | 哈尔滨工业大学 | 一种超临界流体干燥装置及使用方法 |
CN116207033A (zh) | 2015-10-04 | 2023-06-02 | 应用材料公司 | 基板支撑件和挡板设备 |
KR102189211B1 (ko) | 2015-10-04 | 2020-12-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 작은 열 질량의 가압 챔버 |
CN116206947A (zh) | 2015-10-04 | 2023-06-02 | 应用材料公司 | 缩减空间的处理腔室 |
JP6644881B2 (ja) | 2015-10-04 | 2020-02-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高アスペクト比フィーチャ向けの乾燥プロセス |
KR20180006716A (ko) * | 2016-07-11 | 2018-01-19 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN108598019A (zh) * | 2018-04-17 | 2018-09-28 | 德淮半导体有限公司 | 晶圆清洗设备及其清洗方法 |
CN109012493B (zh) * | 2018-08-16 | 2021-03-05 | 宋波 | 减压运行式燃料棒应用装置 |
CN114001526B (zh) * | 2021-11-01 | 2022-09-30 | 华海清科股份有限公司 | 一种晶圆提拉干燥方法及晶圆干燥装置 |
CN113834315A (zh) * | 2021-11-26 | 2021-12-24 | 江苏鑫华半导体材料科技有限公司 | 干燥多晶硅的方法及系统 |
CN115540527B (zh) * | 2022-09-29 | 2024-02-27 | 浙江大学 | 超临界流体干燥系统及干燥方法 |
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GB1594935A (en) | 1976-11-01 | 1981-08-05 | Gen Descaling Co Ltd | Closure for pipe or pressure vessel and seal therefor |
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-
2000
- 2000-08-04 US US09/632,770 patent/US6508259B1/en not_active Expired - Fee Related
- 2000-09-20 IL IL14842400A patent/IL148424A0/xx unknown
- 2000-09-20 KR KR1020027003637A patent/KR20020060182A/ko active IP Right Grant
- 2000-09-20 JP JP2001525145A patent/JP2003510801A/ja active Pending
- 2000-09-20 CN CN00812047A patent/CN1127653C/zh not_active Expired - Fee Related
- 2000-09-20 AT AT00965176T patent/ATE285555T1/de not_active IP Right Cessation
- 2000-09-20 WO PCT/US2000/025726 patent/WO2001022016A1/en active IP Right Grant
- 2000-09-20 EP EP00965176A patent/EP1214555B1/de not_active Expired - Lifetime
- 2000-09-20 DE DE60016938T patent/DE60016938T2/de not_active Expired - Fee Related
- 2000-09-20 AU AU75939/00A patent/AU7593900A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
ATE285555T1 (de) | 2005-01-15 |
KR20020060182A (ko) | 2002-07-16 |
EP1214555A4 (de) | 2004-04-07 |
IL148424A0 (en) | 2002-09-12 |
DE60016938T2 (de) | 2005-12-15 |
US6508259B1 (en) | 2003-01-21 |
EP1214555A1 (de) | 2002-06-19 |
EP1214555B1 (de) | 2004-12-22 |
CN1371462A (zh) | 2002-09-25 |
JP2003510801A (ja) | 2003-03-18 |
AU7593900A (en) | 2001-04-24 |
WO2001022016A1 (en) | 2001-03-29 |
CN1127653C (zh) | 2003-11-12 |
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