DE60006095D1 - Reaktorkammer für einen epitaxiereaktor - Google Patents

Reaktorkammer für einen epitaxiereaktor

Info

Publication number
DE60006095D1
DE60006095D1 DE60006095T DE60006095T DE60006095D1 DE 60006095 D1 DE60006095 D1 DE 60006095D1 DE 60006095 T DE60006095 T DE 60006095T DE 60006095 T DE60006095 T DE 60006095T DE 60006095 D1 DE60006095 D1 DE 60006095D1
Authority
DE
Germany
Prior art keywords
reactor
epitaxis
chamber
belljar
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60006095T
Other languages
English (en)
Other versions
DE60006095T2 (de
Inventor
Franco Preti
Vincenzo Ogliari
Giuseppe Tarenzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPE SpA
Original Assignee
LPE SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LPE SpA filed Critical LPE SpA
Publication of DE60006095D1 publication Critical patent/DE60006095D1/de
Application granted granted Critical
Publication of DE60006095T2 publication Critical patent/DE60006095T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
DE60006095T 1999-03-25 2000-03-17 Reaktorkammer für einen epitaxiereaktor Expired - Fee Related DE60006095T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI990607 1999-03-25
IT1999MI000607A IT1312150B1 (it) 1999-03-25 1999-03-25 Perfezionata camera di reazione per reattore epitassiale
PCT/EP2000/002364 WO2000058533A1 (en) 1999-03-25 2000-03-17 Reaction chamber for an epitaxial reactor

Publications (2)

Publication Number Publication Date
DE60006095D1 true DE60006095D1 (de) 2003-11-27
DE60006095T2 DE60006095T2 (de) 2004-08-19

Family

ID=11382429

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60006095T Expired - Fee Related DE60006095T2 (de) 1999-03-25 2000-03-17 Reaktorkammer für einen epitaxiereaktor

Country Status (13)

Country Link
US (1) US7314526B1 (de)
EP (1) EP1173632B1 (de)
JP (1) JP2002540642A (de)
KR (1) KR100724876B1 (de)
CN (1) CN1255582C (de)
AT (1) ATE252655T1 (de)
DE (1) DE60006095T2 (de)
DK (1) DK1173632T3 (de)
ES (1) ES2207499T3 (de)
HK (1) HK1041029A1 (de)
IT (1) IT1312150B1 (de)
PT (1) PT1173632E (de)
WO (1) WO2000058533A1 (de)

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US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
DE102007063363B4 (de) * 2007-05-21 2016-05-12 Centrotherm Photovoltaics Ag Vorrichtung zur Dotierung und Beschichtung von Halbleitermaterial bei niedrigem Druck
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
JP5445044B2 (ja) * 2008-11-14 2014-03-19 東京エレクトロン株式会社 成膜装置
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP4676567B1 (ja) * 2010-07-20 2011-04-27 三井造船株式会社 半導体基板熱処理装置
JP6078063B2 (ja) 2011-07-13 2017-02-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄膜トランジスタデバイスの製造方法
WO2013052298A1 (en) 2011-10-07 2013-04-11 Applied Materials, Inc. Methods for depositing a silicon containing layer with argon gas dilution
TWI470105B (zh) * 2013-06-03 2015-01-21 Adpv Technology Ltd Gas Reaction Continuous Cavity and Gas Reaction
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
DE112017001577T5 (de) 2016-03-28 2018-12-06 Applied Materials, Inc. Suszeptorträger
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US20180340052A1 (en) * 2017-05-24 2018-11-29 Garlock Sealing Technologies, Llc Biaxial ptfe gasket material with high purity filler
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
CN117187785B (zh) * 2023-11-08 2024-02-23 新美光(苏州)半导体科技有限公司 一种化学气相沉积装置及方法

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US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4421786A (en) * 1981-01-23 1983-12-20 Western Electric Co. Chemical vapor deposition reactor for silicon epitaxial processes
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
US4694779A (en) * 1984-10-19 1987-09-22 Tetron, Inc. Reactor apparatus for semiconductor wafer processing
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JP3424867B2 (ja) * 1994-12-06 2003-07-07 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
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Also Published As

Publication number Publication date
JP2002540642A (ja) 2002-11-26
CN1327490A (zh) 2001-12-19
DE60006095T2 (de) 2004-08-19
ES2207499T3 (es) 2004-06-01
CN1255582C (zh) 2006-05-10
ITMI990607A1 (it) 2000-09-25
KR100724876B1 (ko) 2007-06-04
WO2000058533A1 (en) 2000-10-05
ATE252655T1 (de) 2003-11-15
DK1173632T3 (da) 2004-03-01
EP1173632B1 (de) 2003-10-22
IT1312150B1 (it) 2002-04-09
EP1173632A1 (de) 2002-01-23
PT1173632E (pt) 2004-03-31
HK1041029A1 (zh) 2002-06-28
KR20010102336A (ko) 2001-11-15
US7314526B1 (en) 2008-01-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee