DE60004317D1 - Salze von Sulfonium-Verbindungen - Google Patents
Salze von Sulfonium-VerbindungenInfo
- Publication number
- DE60004317D1 DE60004317D1 DE60004317T DE60004317T DE60004317D1 DE 60004317 D1 DE60004317 D1 DE 60004317D1 DE 60004317 T DE60004317 T DE 60004317T DE 60004317 T DE60004317 T DE 60004317T DE 60004317 D1 DE60004317 D1 DE 60004317D1
- Authority
- DE
- Germany
- Prior art keywords
- salts
- sulfonium compounds
- sulfonium
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP37065599 | 1999-12-27 | ||
JP37065599 | 1999-12-27 | ||
JP2000105789 | 2000-04-07 | ||
JP2000105789 | 2000-04-07 | ||
JP2000315061 | 2000-10-16 | ||
JP2000315061 | 2000-10-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60004317D1 true DE60004317D1 (de) | 2003-09-11 |
DE60004317T2 DE60004317T2 (de) | 2004-06-03 |
Family
ID=27341808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60004317T Expired - Lifetime DE60004317T2 (de) | 1999-12-27 | 2000-12-15 | Salze von Sulfonium-Verbindungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US6723483B1 (de) |
EP (2) | EP1238969A3 (de) |
KR (1) | KR100684084B1 (de) |
CN (1) | CN100486963C (de) |
DE (1) | DE60004317T2 (de) |
SG (1) | SG109439A1 (de) |
TW (1) | TW525038B (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1297537C (zh) * | 2000-08-30 | 2007-01-31 | 和光纯药工业株式会社 | 锍盐化合物 |
WO2002048101A1 (fr) * | 2000-12-15 | 2002-06-20 | San-Apro Limited | Methode de production de sel de sulfonium |
US6841333B2 (en) * | 2002-11-01 | 2005-01-11 | 3M Innovative Properties Company | Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions |
KR20050094828A (ko) * | 2002-12-26 | 2005-09-28 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
KR100427143B1 (ko) * | 2003-01-17 | 2004-04-14 | 엔에이치엔(주) | 스트리밍 데이터 전송 및 다운로드 방법 |
JP4152810B2 (ja) * | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
CN1802603A (zh) | 2003-07-17 | 2006-07-12 | 霍尼韦尔国际公司 | 用于高级微电子应用的平面化薄膜及其生产装置和方法 |
TWI316645B (en) * | 2003-09-18 | 2009-11-01 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition and resist pattern formation method |
CN100381421C (zh) * | 2003-10-21 | 2008-04-16 | 和光纯药工业株式会社 | 三芳基锍盐的制造方法 |
JP2005326491A (ja) * | 2004-05-12 | 2005-11-24 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びレジストパターン形成方法 |
JP4544085B2 (ja) * | 2004-09-28 | 2010-09-15 | Jsr株式会社 | ポジ型感放射線性樹脂組成物 |
WO2006059569A1 (ja) * | 2004-12-03 | 2006-06-08 | Tokyo Ohka Kogyo Co., Ltd. | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4474296B2 (ja) | 2005-02-09 | 2010-06-02 | 富士フイルム株式会社 | 平版印刷版原版 |
TWI332122B (en) * | 2005-04-06 | 2010-10-21 | Shinetsu Chemical Co | Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process |
US8263306B2 (en) * | 2005-04-21 | 2012-09-11 | Texas Instruments Incorporated | Use of blended solvents in defectivity prevention |
KR101334046B1 (ko) * | 2005-07-01 | 2013-12-02 | 시바 홀딩 인크 | 설포늄염 개시제 |
EP1780199B1 (de) * | 2005-10-31 | 2012-02-01 | Shin-Etsu Chemical Co., Ltd. | Neuartige Fluorohydroxyalkylsulfonsäuresalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren |
EP1780198B1 (de) * | 2005-10-31 | 2011-10-05 | Shin-Etsu Chemical Co., Ltd. | Neuartige Fluorosulfonyloxyalkylsulfonatsalze und Derivate, Generatoren von Photosäure, Resistzusammensetzungen, sowie Musterübertragungsverfahren |
TWI512402B (zh) * | 2005-11-25 | 2015-12-11 | Jsr Corp | Sensitive radiation linear resin composition |
JP5124805B2 (ja) * | 2006-06-27 | 2013-01-23 | 信越化学工業株式会社 | 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP5124806B2 (ja) * | 2006-06-27 | 2013-01-23 | 信越化学工業株式会社 | 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
KR101035742B1 (ko) * | 2006-09-28 | 2011-05-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규 광산 발생제 및 이것을 이용한 레지스트 재료 및 패턴형성 방법 |
JP5290183B2 (ja) * | 2006-10-04 | 2013-09-18 | チバ ホールディング インコーポレーテッド | スルホニウム塩光開始剤 |
JP5019071B2 (ja) * | 2007-09-05 | 2012-09-05 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP5245956B2 (ja) * | 2008-03-25 | 2013-07-24 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP4569786B2 (ja) | 2008-05-01 | 2010-10-27 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
TWI400226B (zh) * | 2008-10-17 | 2013-07-01 | Shinetsu Chemical Co | 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法 |
JP4813537B2 (ja) | 2008-11-07 | 2011-11-09 | 信越化学工業株式会社 | 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法 |
US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
TWI417274B (zh) | 2008-12-04 | 2013-12-01 | Shinetsu Chemical Co | 鹽、酸發生劑及使用其之抗蝕劑材料、空白光罩,及圖案形成方法 |
EP2199856B1 (de) * | 2008-12-18 | 2013-08-07 | Agfa Graphics N.V. | Kationische strahlungshärtbare Zusammensetzungen |
JP5368270B2 (ja) * | 2009-02-19 | 2013-12-18 | 信越化学工業株式会社 | 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP5287552B2 (ja) * | 2009-07-02 | 2013-09-11 | 信越化学工業株式会社 | 光酸発生剤並びにレジスト材料及びパターン形成方法 |
US8614047B2 (en) * | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
JP6244109B2 (ja) | 2013-05-31 | 2017-12-06 | 東京応化工業株式会社 | レジスト組成物、化合物、高分子化合物及びレジストパターン形成方法 |
TWI673258B (zh) * | 2014-09-26 | 2019-10-01 | 日商東京應化工業股份有限公司 | 硫鎓鹽、光酸產生劑、及感光性組成物 |
WO2017154345A1 (ja) * | 2016-03-07 | 2017-09-14 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
JP6874634B2 (ja) * | 2017-10-13 | 2021-05-19 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
CN111018763B (zh) * | 2018-10-09 | 2021-10-08 | 常州强力先端电子材料有限公司 | 一种双-三苯基硫鎓盐化合物及其应用 |
JP7389622B2 (ja) * | 2018-11-20 | 2023-11-30 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
EP3909943A4 (de) * | 2019-01-10 | 2022-10-12 | San-Apro Ltd. | Sulfoniumsalz, fotosäuregenerator, härtbare zusammensetzung und resistzusammensetzung |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1526923A (en) * | 1974-09-18 | 1978-10-04 | Ici Ltd | Photopolymerisable compositions |
IE42085B1 (en) | 1974-09-18 | 1980-06-04 | Ici Ltd | Photopolymerisable compositions |
JPH02296801A (ja) | 1989-05-12 | 1990-12-07 | Toshiba Corp | 感光性組成物 |
JP2872694B2 (ja) | 1989-07-19 | 1999-03-17 | エーザイ株式会社 | 血管内血液凝固症候群の治療剤 |
US5500453A (en) * | 1992-02-07 | 1996-03-19 | Toyo Ink Manufacturing Co., Ltd. | (Oxo)sulfonium complex, polymerizable composition containing the complex, and method of polymerizing the composition |
JPH05255240A (ja) | 1992-03-12 | 1993-10-05 | Nec Corp | スルホニウム塩、光酸発生剤、光カチオン重合開始剤およびレジスト組成物 |
JPH06130669A (ja) | 1992-10-16 | 1994-05-13 | Nippon Telegr & Teleph Corp <Ntt> | ポジ型レジスト材料 |
JP3399141B2 (ja) | 1995-03-07 | 2003-04-21 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JPH08245566A (ja) | 1995-03-07 | 1996-09-24 | Shin Etsu Chem Co Ltd | 新規スルホニウム塩 |
KR100293130B1 (ko) | 1995-04-12 | 2001-09-17 | 카나가와 치히로 | 고분자화합물및화학증폭포지티브형레지스트재료 |
JPH08334893A (ja) * | 1995-06-09 | 1996-12-17 | Japan Synthetic Rubber Co Ltd | 感放射線性組成物 |
JP3606291B2 (ja) | 1995-06-29 | 2005-01-05 | 信越化学工業株式会社 | スルホニウム塩 |
JP3399166B2 (ja) | 1995-06-29 | 2003-04-21 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
TW448344B (en) | 1995-10-09 | 2001-08-01 | Shinetsu Chemical Co | Chemically amplified positive resist composition |
TW477913B (en) | 1995-11-02 | 2002-03-01 | Shinetsu Chemical Co | Sulfonium salts and chemically amplified positive resist compositions |
TW436663B (en) | 1995-11-02 | 2001-05-28 | Shinetsu Chemical Co | Sulfonium salts and chemically amplified positive resist compositions |
JP3052815B2 (ja) | 1995-12-01 | 2000-06-19 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JP3760957B2 (ja) | 1996-03-05 | 2006-03-29 | 信越化学工業株式会社 | 新規スルホニウム塩及び化学増幅ポジ型レジスト材料 |
TW574629B (en) | 1997-02-28 | 2004-02-01 | Shinetsu Chemical Co | Polystyrene derivative chemically amplified positive resist compositions, and patterning method |
US6048661A (en) | 1997-03-05 | 2000-04-11 | Shin-Etsu Chemical Co., Ltd. | Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation |
KR100551653B1 (ko) | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
KR100489576B1 (ko) | 1997-10-08 | 2005-12-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 패턴 형성 방법 |
KR100571313B1 (ko) | 1998-03-17 | 2006-04-17 | 후지 샤신 필름 가부시기가이샤 | 포지티브 감광성 조성물 |
JP3955384B2 (ja) * | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
KR100279497B1 (ko) * | 1998-07-16 | 2001-02-01 | 박찬구 | 술포늄 염의 제조방법 |
-
2000
- 2000-12-07 US US09/730,744 patent/US6723483B1/en not_active Expired - Fee Related
- 2000-12-08 TW TW089126162A patent/TW525038B/zh not_active IP Right Cessation
- 2000-12-15 EP EP02011806A patent/EP1238969A3/de not_active Withdrawn
- 2000-12-15 EP EP00127570A patent/EP1113005B1/de not_active Expired - Lifetime
- 2000-12-15 DE DE60004317T patent/DE60004317T2/de not_active Expired - Lifetime
- 2000-12-23 SG SG200007675A patent/SG109439A1/en unknown
- 2000-12-27 CN CNB001206877A patent/CN100486963C/zh not_active Expired - Fee Related
- 2000-12-27 KR KR1020000082470A patent/KR100684084B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20010062717A (ko) | 2001-07-07 |
EP1238969A3 (de) | 2003-01-15 |
EP1113005B1 (de) | 2003-08-06 |
EP1238969A2 (de) | 2002-09-11 |
SG109439A1 (en) | 2005-03-30 |
EP1113005A1 (de) | 2001-07-04 |
CN100486963C (zh) | 2009-05-13 |
TW525038B (en) | 2003-03-21 |
CN1302799A (zh) | 2001-07-11 |
US6723483B1 (en) | 2004-04-20 |
KR100684084B1 (ko) | 2007-02-16 |
DE60004317T2 (de) | 2004-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |