DE59611419D1 - Solarzelle mit back-surface-field und verfahren zur herstellung - Google Patents
Solarzelle mit back-surface-field und verfahren zur herstellungInfo
- Publication number
- DE59611419D1 DE59611419D1 DE59611419T DE59611419T DE59611419D1 DE 59611419 D1 DE59611419 D1 DE 59611419D1 DE 59611419 T DE59611419 T DE 59611419T DE 59611419 T DE59611419 T DE 59611419T DE 59611419 D1 DE59611419 D1 DE 59611419D1
- Authority
- DE
- Germany
- Prior art keywords
- surface field
- manufacture
- solar cell
- boron
- source layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE59611419T DE59611419D1 (de) | 1995-03-10 | 1996-03-07 | Solarzelle mit back-surface-field und verfahren zur herstellung |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19508712A DE19508712C2 (de) | 1995-03-10 | 1995-03-10 | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
| DE59611419T DE59611419D1 (de) | 1995-03-10 | 1996-03-07 | Solarzelle mit back-surface-field und verfahren zur herstellung |
| PCT/DE1996/000415 WO1996028851A1 (de) | 1995-03-10 | 1996-03-07 | Solarzelle mit back-surface-field und verfahren zur herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE59611419D1 true DE59611419D1 (de) | 2007-04-05 |
Family
ID=7756347
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19508712A Expired - Fee Related DE19508712C2 (de) | 1995-03-10 | 1995-03-10 | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
| DE59611419T Expired - Lifetime DE59611419D1 (de) | 1995-03-10 | 1996-03-07 | Solarzelle mit back-surface-field und verfahren zur herstellung |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19508712A Expired - Fee Related DE19508712C2 (de) | 1995-03-10 | 1995-03-10 | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5899704A (de) |
| EP (1) | EP0813753B1 (de) |
| JP (1) | JP3789474B2 (de) |
| AT (1) | ATE354867T1 (de) |
| DE (2) | DE19508712C2 (de) |
| ES (1) | ES2282999T3 (de) |
| WO (1) | WO1996028851A1 (de) |
Families Citing this family (85)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19508712C2 (de) * | 1995-03-10 | 1997-08-07 | Siemens Solar Gmbh | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| DE19813188A1 (de) * | 1998-03-25 | 1999-10-07 | Siemens Solar Gmbh | Verfahren zur einseitigen Dotierung eines Halbleiterkörpers |
| DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
| DE10045249A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements |
| DE10104726A1 (de) * | 2001-02-02 | 2002-08-08 | Siemens Solar Gmbh | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
| GB0114896D0 (en) * | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
| ES2289168T3 (es) * | 2001-11-26 | 2008-02-01 | Shell Solar Gmbh | Celula solar con contactos en la parte posterior y su procedimiento de fabricacion. |
| CN100344000C (zh) * | 2002-10-22 | 2007-10-17 | 上海交大泰阳绿色能源有限公司 | 银栅线穿过TiOx层与Si欧姆接触的烧结工艺 |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
| US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
| US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| JP4481869B2 (ja) | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
| US7824579B2 (en) | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| JP4684056B2 (ja) * | 2005-09-16 | 2011-05-18 | シャープ株式会社 | 太陽電池の製造方法 |
| US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7820475B2 (en) * | 2005-12-21 | 2010-10-26 | Sunpower Corporation | Back side contact solar cell structures and fabrication processes |
| US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
| US8076570B2 (en) * | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
| KR100784905B1 (ko) * | 2006-05-04 | 2007-12-11 | 주식회사 하이닉스반도체 | 반도체 메모리의 데이터 입력 장치 및 방법 |
| FR2906405B1 (fr) * | 2006-09-22 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
| CA2568136C (en) * | 2006-11-30 | 2008-07-29 | Tenxc Wireless Inc. | Butler matrix implementation |
| EP2100336A4 (de) * | 2006-12-22 | 2013-04-10 | Applied Materials Inc | Verbindungstechnologien für rückkontakt-solarzellen und -module |
| CN101663711B (zh) * | 2007-04-25 | 2013-02-27 | 费罗公司 | 含银和镍或银和镍合金的厚膜导体配方及由其制成的太阳能电池 |
| US20090025786A1 (en) * | 2007-05-07 | 2009-01-29 | Georgia Tech Research Corporation | Solar cell having high quality back contact with screen-printed local back surface field |
| US8309844B2 (en) | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
| US20090126786A1 (en) * | 2007-11-13 | 2009-05-21 | Advent Solar, Inc. | Selective Emitter and Texture Processes for Back Contact Solar Cells |
| US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
| WO2009067483A1 (en) * | 2007-11-19 | 2009-05-28 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
| US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
| DE102008019402A1 (de) * | 2008-04-14 | 2009-10-15 | Gebr. Schmid Gmbh & Co. | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
| TWI390747B (zh) * | 2008-04-29 | 2013-03-21 | Applied Materials Inc | 使用單石模組組合技術製造的光伏打模組 |
| US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
| CN102113132B (zh) | 2008-07-16 | 2013-09-25 | 应用材料公司 | 使用掺杂层屏蔽的混合异质结太阳能电池制造 |
| AU2008359970A1 (en) * | 2008-07-28 | 2010-02-04 | Day4 Energy Inc. | Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process |
| US20100035422A1 (en) * | 2008-08-06 | 2010-02-11 | Honeywell International, Inc. | Methods for forming doped regions in a semiconductor material |
| US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
| CN102132422A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 利用印刷介电阻障的背接触太阳能电池 |
| US8062693B2 (en) * | 2008-09-22 | 2011-11-22 | Sunpower Corporation | Generation of contact masks for inkjet printing on solar cell substrates |
| US7951696B2 (en) * | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
| DE102008056456A1 (de) * | 2008-11-07 | 2010-06-17 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
| US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| US8518170B2 (en) * | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| US8409911B2 (en) * | 2009-02-24 | 2013-04-02 | Sunpower Corporation | Methods for metallization of solar cells |
| US9070804B2 (en) * | 2009-02-24 | 2015-06-30 | Sunpower Corporation | Back contact sliver cells |
| US20100243042A1 (en) * | 2009-03-24 | 2010-09-30 | JA Development Co., Ltd. | High-efficiency photovoltaic cells |
| US8247881B2 (en) * | 2009-04-27 | 2012-08-21 | University Of Seoul Industry Cooperation Foundation | Photodiodes with surface plasmon couplers |
| US8404970B2 (en) * | 2009-05-01 | 2013-03-26 | Silicor Materials Inc. | Bifacial solar cells with back surface doping |
| US8324089B2 (en) * | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
| US20110048505A1 (en) * | 2009-08-27 | 2011-03-03 | Gabriela Bunea | Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve |
| US20110114147A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Wind Ltd. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| US8796060B2 (en) | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| US8586862B2 (en) * | 2009-11-18 | 2013-11-19 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| TW201121066A (en) * | 2009-12-14 | 2011-06-16 | Ind Tech Res Inst | Bificial solar cell |
| US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
| JP5573946B2 (ja) | 2010-04-23 | 2014-08-20 | 日立化成株式会社 | ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法 |
| JP5573945B2 (ja) | 2010-04-23 | 2014-08-20 | 日立化成株式会社 | ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 |
| CN102884638A (zh) * | 2010-05-07 | 2013-01-16 | 应用材料公司 | 用于太阳能电池的背侧反射器的氧化物-氮化物堆栈 |
| US8377738B2 (en) | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
| DE102011075352A1 (de) | 2011-05-05 | 2012-11-08 | Solarworld Innovations Gmbh | Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung |
| CN102280519A (zh) * | 2011-05-30 | 2011-12-14 | 奥特斯维能源（太仓）有限公司 | 一种利用硼磷共扩散制备高效全背电极n型太阳电池的工艺 |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
| CN102437241B (zh) * | 2011-12-02 | 2013-11-20 | 百力达太阳能股份有限公司 | 一种消除印刷波浪纹的太阳电池的制备方法 |
| CN102496651B (zh) * | 2011-12-02 | 2014-02-26 | 百力达太阳能股份有限公司 | 一种金刚石线切割高效低成本太阳电池的生产方法 |
| CN104011882A (zh) | 2012-01-12 | 2014-08-27 | 应用材料公司 | 制造太阳能电池装置的方法 |
| JP5662490B2 (ja) | 2012-03-07 | 2015-01-28 | パナソニックＩｐマネジメント株式会社 | 熱電変換装置 |
| US9812590B2 (en) | 2012-10-25 | 2017-11-07 | Sunpower Corporation | Bifacial solar cell module with backside reflector |
| US9035172B2 (en) | 2012-11-26 | 2015-05-19 | Sunpower Corporation | Crack resistant solar cell modules |
| BR102012030606B1 (pt) * | 2012-11-30 | 2021-02-09 | União Brasileira De Educação E Assistência - Mantenedora Da Puc Rs | processo de difusão de dopantes em lâminas de silício para a fabricação de células solares |
| US8796061B2 (en) | 2012-12-21 | 2014-08-05 | Sunpower Corporation | Module assembly for thin solar cells |
| CN103236470B (zh) * | 2013-04-26 | 2015-12-23 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳电池二氧化硅薄膜的制备方法 |
| US9685571B2 (en) | 2013-08-14 | 2017-06-20 | Sunpower Corporation | Solar cell module with high electric susceptibility layer |
| CN104120494A (zh) * | 2014-06-25 | 2014-10-29 | 上饶光电高科技有限公司 | 一种适用于提升晶体硅太阳能电池转换效率的扩散工艺 |
| DE102014224004A1 (de) | 2014-11-25 | 2016-05-25 | crystalsol OÜ | Elektronisches Bauteil mit Zwischenschicht zwischen n- und p-dotierter Halbleiterschicht |
| CN104779321B (zh) * | 2015-03-31 | 2017-06-13 | 中建材浚鑫科技股份有限公司 | 一种提高线痕电池片合格率的方法 |
| CN105938732A (zh) * | 2016-07-08 | 2016-09-14 | 东莞珂洛赫慕电子材料科技有限公司 | 一种热固化导电浆料及其制备方法 |
| CN108666243A (zh) * | 2018-05-09 | 2018-10-16 | 永嘉利为新能源有限公司 | 一种单晶电池片的制绒方法 |
| CN111564521A (zh) * | 2019-07-18 | 2020-08-21 | 国家电投集团西安太阳能电力有限公司 | 一种全绒面ibc太阳电池制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158591A (en) * | 1978-04-24 | 1979-06-19 | Atlantic Richfield Company | Solar cell manufacture |
| DE3340874A1 (de) * | 1983-11-11 | 1985-05-23 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen einer solarzelle |
| DK170189B1 (da) * | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf |
| DE19508712C2 (de) * | 1995-03-10 | 1997-08-07 | Siemens Solar Gmbh | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
-
1995
- 1995-03-10 DE DE19508712A patent/DE19508712C2/de not_active Expired - Fee Related
-
1996
- 1996-03-07 AT AT96904750T patent/ATE354867T1/de not_active IP Right Cessation
- 1996-03-07 WO PCT/DE1996/000415 patent/WO1996028851A1/de active IP Right Grant
- 1996-03-07 ES ES96904750T patent/ES2282999T3/es not_active Expired - Lifetime
- 1996-03-07 EP EP96904750A patent/EP0813753B1/de not_active Expired - Lifetime
- 1996-03-07 JP JP52717196A patent/JP3789474B2/ja not_active Expired - Fee Related
- 1996-03-07 DE DE59611419T patent/DE59611419D1/de not_active Expired - Lifetime
- 1996-03-07 US US08/913,097 patent/US5899704A/en not_active Expired - Lifetime
-
1998
- 1998-12-16 US US09/212,804 patent/US6096968A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ES2282999T3 (es) | 2007-10-16 |
| JP3789474B2 (ja) | 2006-06-21 |
| EP0813753A1 (de) | 1997-12-29 |
| WO1996028851A1 (de) | 1996-09-19 |
| ATE354867T1 (de) | 2007-03-15 |
| US5899704A (en) | 1999-05-04 |
| DE19508712C2 (de) | 1997-08-07 |
| US6096968A (en) | 2000-08-01 |
| JPH11504762A (ja) | 1999-04-27 |
| DE19508712A1 (de) | 1996-09-12 |
| EP0813753B1 (de) | 2007-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE59611419D1 (de) | Solarzelle mit back-surface-field und verfahren zur herstellung | |
| TW332345B (en) | Structure and fabrication process for self-aligned locally deep-diffused emitter (salde) solar cell | |
| TW355845B (en) | Semiconductor device and a method of manufacturing the same | |
| DE50015975D1 (de) | Verfahren zur Rauhätzung von Siliziumsolarzellen | |
| EP1102314A3 (de) | Verfahren zur Herstellung eines SOI-Substrates | |
| EP0923113A3 (de) | Niedrigtemperatur-Diffundierungsverfahren um die Dotierungsdichte zu erhöhen | |
| EP0322921A3 (de) | Verfahren zur Bildung von flachen Übergängen und Halbleiterbauelement mit flachen Übergängen | |
| JPS57197827A (en) | Semiconductor substrate | |
| ATE150584T1 (de) | Verfahren und vorrichtung zum herstellen von übergängen durch diffusion in substrate von solarzellen | |
| JPS55124238A (en) | Method of fabricating semiconductor device | |
| JPS5618419A (en) | Manufacture of semiconductor device | |
| JPS57128943A (en) | Insulation isolated semiconductor integrated device and manufacture thereof | |
| JPS5538082A (en) | Formation for buried layer of semiconductor device | |
| JPS5762537A (en) | Forming method for film | |
| JPS56169319A (en) | Manufacture of semiconductor device | |
| TW370685B (en) | Method for manufacturing a rough-surface film layer of antireflection | |
| JPS57124427A (en) | Manufacture of semiconductor device | |
| JPS55128828A (en) | Manufacture of semiconductor device | |
| JPS5745227A (en) | Manufacture of semiconductor device | |
| JPS5680125A (en) | Formation of monocrystalline semiconductor film | |
| JPS56161640A (en) | Semiconductor diffusion method | |
| JPS6467922A (en) | Method of gettering semiconductor device | |
| JPS57118633A (en) | Manufacture of semiconductor device | |
| JPS6428815A (en) | Manufacture of semiconductor device | |
| JPS56135973A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SOLARWORLD INDUSTRIES DEUTSCHLAND GMBH, 81739 , DE |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SOLARWORLD INDUSTRIES DEUTSCHLAND GMBH, 53175 , DE |