DE50312746D1 - Verfahren zur herstellung eines feldeffekttransistors - Google Patents

Verfahren zur herstellung eines feldeffekttransistors

Info

Publication number
DE50312746D1
DE50312746D1 DE50312746T DE50312746T DE50312746D1 DE 50312746 D1 DE50312746 D1 DE 50312746D1 DE 50312746 T DE50312746 T DE 50312746T DE 50312746 T DE50312746 T DE 50312746T DE 50312746 D1 DE50312746 D1 DE 50312746D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
producing
insulation
gate contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50312746T
Other languages
English (en)
Inventor
Rolf Koenenkamp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Original Assignee
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH filed Critical Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority to DE50312746T priority Critical patent/DE50312746D1/de
Application granted granted Critical
Publication of DE50312746D1 publication Critical patent/DE50312746D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
DE50312746T 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors Expired - Lifetime DE50312746D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50312746T DE50312746D1 (de) 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10250984A DE10250984A1 (de) 2002-10-29 2002-10-29 Feldeffekttransistor sowie Verfahren zu seiner Herstellung
DE50312746T DE50312746D1 (de) 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors
PCT/DE2003/003673 WO2004040616A2 (de) 2002-10-29 2003-10-29 Feldeffekttransistor sowie verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
DE50312746D1 true DE50312746D1 (de) 2010-07-08

Family

ID=32115093

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10250984A Withdrawn DE10250984A1 (de) 2002-10-29 2002-10-29 Feldeffekttransistor sowie Verfahren zu seiner Herstellung
DE50312746T Expired - Lifetime DE50312746D1 (de) 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10250984A Withdrawn DE10250984A1 (de) 2002-10-29 2002-10-29 Feldeffekttransistor sowie Verfahren zu seiner Herstellung

Country Status (9)

Country Link
US (1) US7659165B2 (de)
EP (1) EP1556910B1 (de)
JP (1) JP2006505119A (de)
KR (1) KR20050056259A (de)
CN (1) CN100466290C (de)
AT (1) ATE469443T1 (de)
AU (1) AU2003294616A1 (de)
DE (2) DE10250984A1 (de)
WO (1) WO2004040616A2 (de)

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JP5025132B2 (ja) 2002-10-29 2012-09-12 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ カーボンナノチューブ素子の製造
US7253434B2 (en) 2002-10-29 2007-08-07 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
EP1700336A1 (de) * 2003-12-23 2006-09-13 Koninklijke Philips Electronics N.V. Halbleiterbauelement mit einem heteroübergang
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7211844B2 (en) * 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
WO2005124888A1 (en) * 2004-06-08 2005-12-29 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
GB0413310D0 (en) * 2004-06-15 2004-07-14 Koninkl Philips Electronics Nv Nanowire semiconductor device
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US7233071B2 (en) * 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
ATE529734T1 (de) 2005-04-06 2011-11-15 Harvard College Molekulare charakterisierung mit kohlenstoff- nanoröhrchen-steuerung
CN100403550C (zh) * 2005-08-05 2008-07-16 西安电子科技大学 垂直型宽禁带半导体器件结构及制作方法
JP2009540798A (ja) * 2006-03-15 2009-11-26 プレジデント アンド フェロウズ オブ ハーバード カレッジ ナノバイオエレクトロニクス
WO2008051316A2 (en) 2006-06-12 2008-05-02 President And Fellows Of Harvard College Nanosensors and related technologies
US8643087B2 (en) 2006-09-20 2014-02-04 Micron Technology, Inc. Reduced leakage memory cells
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
WO2008129478A1 (en) * 2007-04-19 2008-10-30 Nxp B.V. Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
FR2923651A1 (fr) * 2007-11-13 2009-05-15 Commissariat Energie Atomique Procede de realisation d'une jonction pn dans un nanofil, et d'un nanofil avec au moins une jonction pn.
KR101018294B1 (ko) * 2008-09-19 2011-03-04 한국과학기술원 수직형 트랜지스터 소자
US9005548B2 (en) * 2009-02-25 2015-04-14 California Institute Of Technology Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars
JP5763629B2 (ja) * 2009-06-26 2015-08-12 カリフォルニア インスティチュート オブ テクノロジー パッシベートされたシリコンナノワイヤーの製造方法およびこれにより得られるデバイス
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
US8809093B2 (en) 2009-11-19 2014-08-19 California Institute Of Technology Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires
US9018684B2 (en) 2009-11-23 2015-04-28 California Institute Of Technology Chemical sensing and/or measuring devices and methods
CN102082178B (zh) * 2009-11-30 2012-05-23 华映视讯（吴江）有限公司 垂直式薄膜晶体管及其制造方法及显示装置及其制造方法
FR2962595B1 (fr) 2010-07-06 2015-08-07 Commissariat Energie Atomique Dispositif microélectronique a niveaux métalliques d'interconnexion connectes par des vias programmables
CN102097477B (zh) * 2010-12-15 2012-10-17 复旦大学 带栅极的mis及mim器件
WO2012170630A2 (en) 2011-06-10 2012-12-13 President And Fellows Of Harvard College Nanoscale wires, nanoscale wire fet devices, and nanotube-electronic hybrid devices for sensing and other applications
CN104157686B (zh) * 2014-08-11 2017-02-15 北京大学 一种环栅场效应晶体管及其制备方法
CN104882487B (zh) * 2015-05-15 2017-12-08 合肥鑫晟光电科技有限公司 薄膜晶体管、阵列基板及其制造方法和显示装置
CN113299761A (zh) * 2021-05-12 2021-08-24 深圳市华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板

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JP3375117B2 (ja) * 1997-06-11 2003-02-10 シャープ株式会社 半導体装置及びその製造方法、及び液晶表示装置
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DE10036897C1 (de) * 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
WO2003019683A2 (en) * 2001-08-29 2003-03-06 D-Wave Systems, Inc. Trilayer heterostructure josephson junctions
US6515325B1 (en) 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
JP4290953B2 (ja) * 2002-09-26 2009-07-08 奇美電子股▲ふん▼有限公司 画像表示装置、有機ｅｌ素子および画像表示装置の製造方法
US7259023B2 (en) * 2004-09-10 2007-08-21 Intel Corporation Forming phase change memory arrays

Also Published As

Publication number Publication date
CN100466290C (zh) 2009-03-04
WO2004040616A3 (de) 2004-07-22
ATE469443T1 (de) 2010-06-15
CN1708864A (zh) 2005-12-14
JP2006505119A (ja) 2006-02-09
DE10250984A1 (de) 2004-05-19
EP1556910B1 (de) 2010-05-26
AU2003294616A1 (en) 2004-05-25
AU2003294616A8 (en) 2004-05-25
KR20050056259A (ko) 2005-06-14
WO2004040616A2 (de) 2004-05-13
US7659165B2 (en) 2010-02-09
US20060118975A1 (en) 2006-06-08
EP1556910A2 (de) 2005-07-27

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