DE50303504D1 - Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess - Google Patents

Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess

Info

Publication number
DE50303504D1
DE50303504D1 DE50303504T DE50303504T DE50303504D1 DE 50303504 D1 DE50303504 D1 DE 50303504D1 DE 50303504 T DE50303504 T DE 50303504T DE 50303504 T DE50303504 T DE 50303504T DE 50303504 D1 DE50303504 D1 DE 50303504D1
Authority
DE
Germany
Prior art keywords
treating
tape material
supported process
plasma supported
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50303504T
Other languages
English (en)
Inventor
Pierre Fayet
Bertrand Jaccoud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tetra Laval Holdings and Finance SA
Original Assignee
Tetra Laval Holdings and Finance SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tetra Laval Holdings and Finance SA filed Critical Tetra Laval Holdings and Finance SA
Application granted granted Critical
Publication of DE50303504D1 publication Critical patent/DE50303504D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
DE50303504T 2002-10-03 2003-09-09 Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess Expired - Lifetime DE50303504D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH01652/02A CH696013A5 (de) 2002-10-03 2002-10-03 Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess.
PCT/CH2003/000609 WO2004032175A1 (de) 2002-10-03 2003-09-09 Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess

Publications (1)

Publication Number Publication Date
DE50303504D1 true DE50303504D1 (de) 2006-06-29

Family

ID=32046627

Family Applications (1)

Application Number Title Priority Date Filing Date
DE50303504T Expired - Lifetime DE50303504D1 (de) 2002-10-03 2003-09-09 Vorrichtung zur behandlung eines bandförmigen materials in einem plasma-unterstützten prozess

Country Status (11)

Country Link
US (1) US7806981B2 (de)
EP (1) EP1547124B1 (de)
JP (1) JP4585860B2 (de)
KR (1) KR100977892B1 (de)
CN (1) CN100466154C (de)
AU (1) AU2003257359A1 (de)
BR (1) BR0315010A (de)
CH (1) CH696013A5 (de)
DE (1) DE50303504D1 (de)
MX (1) MXPA05003539A (de)
WO (1) WO2004032175A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5095087B2 (ja) * 2005-04-21 2012-12-12 大日本印刷株式会社 成膜装置及び成膜方法
JP4558810B2 (ja) * 2008-02-29 2010-10-06 富士フイルム株式会社 成膜装置
DE202008006477U1 (de) * 2008-05-06 2008-07-24 Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden Vorrichtung zur Modifizierung von Substratoberflächen
WO2011029096A2 (en) * 2009-09-05 2011-03-10 General Plasma, Inc. Plasma enhanced chemical vapor deposition apparatus
JP5270505B2 (ja) * 2009-10-05 2013-08-21 株式会社神戸製鋼所 プラズマｃｖｄ装置
EP3736353A1 (de) * 2011-12-28 2020-11-11 Dai Nippon Printing Co., Ltd. Dampfablagerungsvorrichtung mit einer vorbehandlungsvorrichtung unter verwendung von plasma
JP5958092B2 (ja) * 2012-05-31 2016-07-27 ソニー株式会社 成膜装置及び成膜方法
JP6045265B2 (ja) * 2012-09-18 2016-12-14 リンテック株式会社 イオン注入装置
EP2762607B1 (de) * 2013-01-31 2018-07-25 Applied Materials, Inc. Abscheidungsquelle mit einstellbarer Elektrode
EP3054032B1 (de) 2015-02-09 2017-08-23 Coating Plasma Industrie Installation zur Filmabscheidung auf und/oder zur Modifikation der Oberfläche eines sich bewegenden Substrats
RU2733367C2 (ru) * 2015-07-03 2020-10-01 Тетра Лаваль Холдингз Энд Файнэнс С.А. Барьерная пленка или лист, и многослойный упаковочный материал, включающий пленку или лист, и изготовленный из них упаковочный контейнер
JP7115977B2 (ja) * 2015-10-29 2022-08-09 テトラ ラバル ホールディングス アンド ファイナンス エス エイ バリアフィルムまたはシートおよびそのフィルムまたはシートを含むラミネート包装材料およびそれから作られた包装容器
ES2908728T3 (es) 2017-04-28 2022-05-03 Tetra Laval Holdings & Finance Material de envasado laminado que comprende una película de barrera
EP3647457B1 (de) * 2017-06-30 2023-06-21 Toppan Printing Co., Ltd. Filmbehandlungsverfahren und filmherstellungsverfahren

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884787A (en) * 1973-01-12 1975-05-20 Coulter Information Systems Sputtering method for thin film deposition on a substrate
US4322276A (en) * 1979-06-20 1982-03-30 Deposition Technology, Inc. Method for producing an inhomogeneous film for selective reflection/transmission of solar radiation
JPH07100857B2 (ja) * 1985-10-09 1995-11-01 株式会社日立製作所 炭素皮膜形成方法及び装置
US4738761A (en) * 1986-10-06 1988-04-19 Microelectronics Center Of North Carolina Shared current loop, multiple field apparatus and process for plasma processing
DE3735162A1 (de) * 1986-10-17 1988-04-28 Hitachi Ltd Aufdampfvorrichtung
JPS63103066A (ja) * 1986-10-17 1988-05-07 Hitachi Ltd プレ−ナマグネトロン方式のスパツタリング装置
JPS63112441A (ja) * 1986-10-28 1988-05-17 Nippon Sheet Glass Co Ltd 透明熱線反射板
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
EP0308680A1 (de) * 1987-09-21 1989-03-29 THELEN, Alfred, Dr. Vorrichtung zum Kathodenzerstäuben
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
JP3111353B2 (ja) * 1989-08-31 2000-11-20 橋本フォーミング工業株式会社 透明樹脂成形品の製造方法
JPH0565642A (ja) * 1991-09-10 1993-03-19 Matsushita Electric Ind Co Ltd 反応性スパツタリング装置
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法
EP0783174B1 (de) * 1995-10-27 2006-12-13 Applied Materials GmbH & Co. KG Vorrichtung zum Beschichten eines Substrats
JP4332226B2 (ja) * 1996-06-03 2009-09-16 株式会社アルバック 可撓性フィルム用プラズマｃｖｄ装置、アモルファスシリコン製造方法
JPH1192579A (ja) * 1997-09-19 1999-04-06 Nitto Denko Corp 有機基材のプラズマ処理方法及び有機基材への金属層形成方法
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
JP2001035839A (ja) * 1999-05-18 2001-02-09 Hitachi Kokusai Electric Inc プラズマ生成装置および半導体製造方法
EP1157454A4 (de) * 1999-12-07 2008-07-30 Advanced Energy Ind Inc Stromversorgung mit einem fluxgesteurten transformator
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置

Also Published As

Publication number Publication date
US20060150908A1 (en) 2006-07-13
KR20050065572A (ko) 2005-06-29
EP1547124A1 (de) 2005-06-29
CN1689133A (zh) 2005-10-26
JP2006501366A (ja) 2006-01-12
WO2004032175A1 (de) 2004-04-15
US7806981B2 (en) 2010-10-05
EP1547124B1 (de) 2006-05-24
BR0315010A (pt) 2005-08-09
KR100977892B1 (ko) 2010-08-24
AU2003257359A1 (en) 2004-04-23
CH696013A5 (de) 2006-11-15
JP4585860B2 (ja) 2010-11-24
CN100466154C (zh) 2009-03-04
MXPA05003539A (es) 2005-06-03

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