DE4232532A1 - Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode - Google Patents

Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode

Info

Publication number
DE4232532A1
DE4232532A1 DE19924232532 DE4232532A DE4232532A1 DE 4232532 A1 DE4232532 A1 DE 4232532A1 DE 19924232532 DE19924232532 DE 19924232532 DE 4232532 A DE4232532 A DE 4232532A DE 4232532 A1 DE4232532 A1 DE 4232532A1
Authority
DE
Germany
Prior art keywords
ion
field effect
sensitive field
arrangement
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19924232532
Other languages
German (de)
Inventor
Karlheinz Freiwald
Guenter Schwarzrock
Gerd Marxen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CENTRUM FUER INTELLIGENTE SENSORIK ERFURT E.V. (CI
Original Assignee
CT fur INTELLIGENTE SENSORIK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CT fur INTELLIGENTE SENSORIK filed Critical CT fur INTELLIGENTE SENSORIK
Priority to DE19924232532 priority Critical patent/DE4232532A1/en
Publication of DE4232532A1 publication Critical patent/DE4232532A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Abstract

Drain and source diffusion regions (3) are formed in a p-well (2) in an n-Si substrate (1), and bridged by a gate structure of thermal oxide (7) under a sandwich comprising a thin intermediate thermal oxide layer (9) between insulating layers of Si3N4 (8) and either Si3N4, Ta2O5 or Al2O3 (10). The pseudo-reference electrode (12) on the field oxide (6) makes contact with the electrolyte (17) and is protected electrostatically by Al contacts (11) with n+p and p+n diodes (4, 5). During the Al etching process some metal is left in situ (16) for the structuring of additional passivation (13). Encapsulation (15) is excluded from between edges (14). USE/ADVANTAGE - Pref. in measurement and control technology, improved insulator stability makes for more reliable operation and longer lifetime.

Description

Die Erfindung betrifft eine Anordnung und ein Verfahren zur Erhöhung der Zuverlässigkeit bei der Herstellung von ionensensitiven Feldeffekttransistoren.The invention relates to an arrangement and a method to increase reliability in the manufacture of ion sensitive field effect transistors.

Die Erfindung findet in der Elektronikindustrie, vorzugs­ weise in der Halbleitertechnik, bei der Herstellung von ionensensitiven Feldeffekttransistoren Anwendung.The invention takes place in the electronics industry, preferably wise in semiconductor technology, in the manufacture of ion-sensitive field effect transistors application.

Es ist bekannt, daß ionensensitive Feldeffekttransistoren ein offenes Gategebiet haben, das mit einer zu messenden Lösung in Kontakt gebracht wird. Wegen der geringen Isola­ torschichtdicken und der geringen Eingangskapazitäten ist eine große Empfindlichkeit auf elektrostatische Ladungen festzustellen, wie diese auch im Patent DD 2 75 958 beschrie­ ben wird.It is known that ion sensitive field effect transistors have an open gate area that is to be measured Solution is brought into contact. Because of the low isola gate layer thicknesses and the low input capacities great sensitivity to electrostatic charges determine how this also described in the patent DD 2 75 958 will.

Dieser negative Effekt tritt gleichermaßen während des Her­ stellungsprozesses, beim Sensorhandling und im Meßbetrieb auf.This negative effect occurs equally during the heart position process, in sensor handling and in measuring operation on.

Bekannt ist weiterhin, daß wegen der kleinen Nutzsignale im Millivoltbereich auf eine ausreichende elektrische Sta­ bilität des Gateisolatoraufbaues Wert gelegt wird. Darüber hinaus ist bekannt, daß bei Isolatorschichtungen z. B. bei der Verwendung von üblichen Isolatoren wie Silium-Nitrid (Si3N4), Aluminiumoxid (Al2O3) und Tantalpentoxid (Ta2O5), die auf dem Siliziumdioxid (SiO2) abgeschieden werden, sich daraus hinsichtlich der Stabilität komplizierte Verhältnisse ergeben.It is also known that because of the small useful signals in the millivolt range to a sufficient electrical sta value of the gate insulator structure. About that It is also known that z. B. at the use of common insulators such as silicon nitride (Si3N4), aluminum oxide (Al2O3) and tantalum pentoxide (Ta2O5), which are deposited on the silicon dioxide (SiO2) from this complicated relationships in terms of stability surrender.

Nachteilig sind die dabei entstehenden Isolatorübergänge, die zu Isolatorhaftstellen führen und die bei Umladung zu Instabilitäten der Schwellspannung beitragen.The resulting insulator junctions are disadvantageous, that lead to insulator detention and that to reloading Threshold voltage instabilities contribute.

Weiterhin können Probleme bei der Zuverlässigkeit hinsicht­ lich der Chippassivierung und Chipverkappung auftreten.Furthermore, reliability problems may arise Lich passivation and chip capping occur.

Der Erfindung liegt die Aufgabe zugrunde, ionensensitive Feldeffekttransistoren mit hoher Zuverlässigkeit hinsicht­ lich der Handhabungssicherheit und im Lebensdauerverhalten herzustellen.The invention is based, ion-sensitive the task Field effect transistors with high reliability handling safety and durability to manufacture.

Die Erfindung bezieht sich insbesondere auf den Waferpro­ zeß und ist für ein großes Sensorenkollektiv einsetzbar.The invention relates in particular to the wafer pro zeß and can be used for a large sensor collective.

Nachstehend soll die Erfindung beispielhaft erläutert wer­ den.The invention will be explained below by way of example the.

Erfindungsgemäß wird der elektrostatische Schutz in Verbin­ dung mit einer leitfähigen Pseudoreferenzelektrode auf dem Chip realisiert. Die Pseudoreferenzelektrode ist mit zwei Schutzdioden elektrisch verbunden, wobei eine Diode in der Wanne und die andere Diode im Substrat einer CMOS-Schal­ tung liegt.According to the invention, the electrostatic protection in Verbin with a conductive pseudo reference electrode on the Chip realized. The pseudo reference electrode is two Protective diodes electrically connected, with a diode in the Well and the other diode in the substrate of a CMOS scarf tung lies.

Im spannungslosen Zustand werden elektrostatische Aufla­ dungen entweder zum Bulk oder zur Wanne abgeleitet. Im Be­ triebszustand kann sich das Potential infolge von elektro­ statischen Aufladungen maximal um die Flußspannung der in­ tegrierten Dioden über die angelegte Betriebsspanung erhö­ hen. Damit ist in jedem Zustand des Sensors ein wirksamer Schutz möglich. Weiterhin wird erfindungsgemäß der geschich­ tete Gateisolator mit einer zusätzlichen Isolatorkombination belegt, so daß sich eine Schichtfolge auf dem Siliziumsub­ strat mindestens der Art I1, I2, I3 und I4 ergibt.In the de-energized state, electrostatic charges  drafts either to the bulk or to the tub. In Be drive state, the potential due to electro static charges up to the forward voltage of the in Increase the integrated diodes above the applied operating voltage hen. It is effective in every state of the sensor Protection possible. Furthermore, according to the invention, the history tated gate insulator with an additional insulator combination occupied, so that a layer sequence on the silicon sub strat results at least of the types I1, I2, I3 and I4.

Der Isolator I3 funktioniert als Barriere zur Unterdrückung von elektronischen Isolatorströmen und bewirkt somit eine deutliche Stabilitätsverbesserung des Isolatorsystems. Die Möglichkeit einer zusätzlichen Chippassivierung am Ende des Waferprozesses wird dadurch geschaffen, in dem bei der Strukturierung des metallischen Leibahnsystems zunächst das ionensensitive Feldeffekttransistoren-Gate mit Metall be­ deckt bleibt und sich noch nicht vom identischen Feldeffekt­ transistor mit Metallgate unterscheidet. Nach Abscheidung der Zusatzpassivierung erfolgt deren Strukturierung derart, daß nicht nur wie üblich die Kontaktinseln frei geätzt wer­ den, auch das noch mit Metall abgedeckte ionensensitive Feldeffekttransistoren-Gate. Nach Abdeckung der Kontaktbe­ reiche des ionensensitiven Feldeffekttransistors wird in einem zweiten Ätzschritt am fertigen Sensorenaufbau (inclu­ sive Verkappung), das Metall vom ionensensitiven Feldeffekt­ transistor entfernt. Damit liegt der ionensensitive Feldef­ fekttransistor wie üblich, ohne Gateabdeckung, präpariert vor. Zur Abgrenzung der Fensteröffnung um das ionensensitive Feldeffekttransistoren-Gate herum, wird ein Lacksteg präpa­ riert, der bis zur Verkapselung des Chips erhalten bleibt und bei dem Umgießen der Fensteröffnung als Lackstoppkante dient.The isolator I3 functions as a barrier to suppression of electronic isolator currents and thus causes a significant improvement in the stability of the isolator system. The Possibility of an additional chip passivation at the end of the Wafer process is created in which at Structuring the metallic body tooth system first of all ion-sensitive field effect transistor gate with metal be remains covered and does not yet differ from the identical field effect transistor with metal gate differs. After separation the additional passivation is structured in such a way that not only the contact islands are etched freely as usual den, also the ion-sensitive still covered with metal Field effect transistor gate. After covering the contact area range of the ion sensitive field effect transistor is in a second etching step on the finished sensor assembly (incl capping), the metal from the ion-sensitive field effect transistor removed. This is the ion-sensitive field fect transistor prepared as usual, without gate cover in front. To delimit the window opening around the ion sensitive Field effect transistor gate around, a paint bar is prepared that remains until the chip is encapsulated and when casting around the window opening as a paint stop edge serves.

Das Ausführungsbeispiel in (Fig. 1) zeigt eine mögliche Aus­ führungsvariante eines ionensensitiven Feldeffekttransistors in p-Wannentechnologie in einem n-Si-Substrat 1. Dieser ionensensitive Feldeffekttransistor befindet sich mit seinen Diffussionsgebieten 3 in der p-Wanne 2. Der Gate­ aufbau besteht aus einem thermischen Oxid 7 und einem zwei­ ten Isolator 8 bestehend aus Si3N4.The exemplary embodiment in (FIG. 1) shows a possible embodiment variant of an ion-sensitive field effect transistor in p-well technology in an n-Si substrate 1 . This ion-sensitive field effect transistor with its diffusion regions 3 is located in the p-well 2 . The gate structure consists of a thermal oxide 7 and a two insulator 8 consisting of Si3N4.

Erfindungsgemäß wird zusätzlich eine dünne Zwischenschicht 9 präpariert, bevor der obenliegende Isolator 10 bestehend aus wahlweise Si3N4, Ta2O5, oder Al2O3 abgeschieden wird.According to the invention, a thin intermediate layer 9 is additionally prepared before the insulator 10 on top, consisting of optionally Si3N4, Ta2O5, or Al2O3, is deposited.

Die auf dem Feldoxid liegende Pseudoreferenzelektrode steht im Meßbetrieb über den Flächen 12 mit der Meßlösung 17 in Kontakt.The pseudo reference electrode lying on the field oxide is in contact with the measuring solution 17 in the measuring mode over the surfaces 12 .

Zum elektrostatischen Schutz wird über eine Al- Verbindung die Pseudoreferenzelektrode 12 mit den Schutzdioden 4 und 5 verbunden, die erfindungsgemäß elektrostatische Aufladungen ableiten sollen.For electrostatic protection, the pseudo reference electrode 12 is connected to the protective diodes 4 and 5 via an Al connection, which are intended to discharge electrostatic charges according to the invention.

Erfindungsgemäß wird bei der Ätzung des Aluminiums das Alumi­ nium auf dem ionensensitiven Feldeffekttransistor-Isolator 10 zwecks Strukturierung der Zusatzpassivierung 13 zu­ nächst stehen gelassen, um es nach dem vollständigen Aufbau des ionensensitiven Feldeffekttransistor-Chips inclusive Abdeckung 15 wieder zu entfernen.According to the invention, the aluminum on the ion-sensitive field-effect transistor insulator 10 is left to stand next to the etching of the aluminum for the purpose of structuring the additional passivation 13 , in order to remove it again after the complete build-up of the ion-sensitive field-effect transistor chip including cover 15 .

Weiterhin wird erfindungsgemäß, um das aktive ionensensitive Feldeffekttransistorgebiet herum, eine Lackstoppkante mit zum Teil überhängendem Seitenprofil 14 präpariert, um das Ver­ laufen der Abdeckmasse 15 an der beabsichtigten Stelle zu stoppen und damit eine definierte Öffnung in der Abdeckmasse, zu erhalten.Furthermore, according to the invention, around the active ion-sensitive field effect transistor area, a lacquer stop edge with partially overhanging side profile 14 is prepared in order to stop the covering compound 15 from running at the intended location and thus to obtain a defined opening in the covering compound.

BezugszeichenReference numerals

 1 n-Si-Substrat
 2 p-Wanne
 3 ionensensitiver Feldeffekttransistor-Drain/Source
 4 n+p-Schutzdiode für Pseudoreferenzelektrode
 5 p+n-Schutzdiode für Pseudoreferenzelektrode
 6 Feldoxid
 7 thermisches Oxid
 8 Silizium- Nitrid
 9 dünnes thermisches Oxid
10 Silizium-Nitrid, Aluminiumoxid, Tantalpentoxid
11 Al-Kontakte zu den Schutzdioden und zur Pseudoreferenzelektrode
12 freiliegender Teil der Pseudoreferenzelektrode kontaktiert den Elektrolyten
13 Zusatzpassivierung
14 Lackstopp-Kante
15 Vergußharz/Verkappung
16 vorübergehend stehengelassene Al-Schicht
17 Meßlösung (Elektrolyt) 1 n-Si substrate
2 p-tub
3 ion-sensitive field effect transistor drain / source
4 n + p protection diode for pseudo reference electrode
5 p + n protection diode for pseudo reference electrode
6 field oxide
7 thermal oxide
8 silicon nitride
9 thin thermal oxide
10 silicon nitride, aluminum oxide, tantalum pentoxide
11 Al contacts to the protective diodes and to the pseudo reference electrode
12 exposed part of the pseudo reference electrode contacts the electrolyte
13 Additional passivation
14 paint stop edge
15 potting resin / capping
16 Al layer left temporarily
17 measuring solution (electrolyte)

Claims (9)

1. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren, gekennzeichnet dadurch, daß die Schutzschaltung gegen elektrostatische Aufladungen in Verbindung mit einer integrierten Pseudo­ referenzelektrode, die mit zwei Dioden elektrisch verbunden ist, die jeweils im Bulk und in der Wanne einer CMOS- Schaltung angeordnet und wie passive Bauelemente beschal­ tet sind.1. Arrangement and method for increasing reliability characterized by ion-sensitive field effect transistors in that the protective circuit against electrostatic Charges in connection with an integrated pseudo reference electrode that is electrically connected to two diodes is in bulk and in the tub of a CMOS Circuit arranged and sounded like passive components are. 2. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren nach Anspruch 1, gekennzeichnet dadurch, daß die integrierte Referenzelek­ trode aus Titannitrid besteht.2. Arrangement and procedure for increasing reliability ion-sensitive field effect transistors according to claim 1, characterized in that the integrated reference elec trode consists of titanium nitride. 3. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren nach Anspruch 1, gekennzeichnet dadurch, daß die Schutzdioden als gategesteu­ erte Dioden ausgebildet sind.3. Arrangement and procedure for increasing reliability ion-sensitive field effect transistors according to claim 1, characterized in that the protective diodes as gate controlled erte diodes are formed. 4. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren nach Anspruch 1, gekennzeichnet dadurch, daß nur eine Diode oder eine Diode als gategesteuerte Diode mit herabgesetzter Durch­ bruchspannung eingesetzt wird.4. Arrangement and procedure for increasing reliability ion-sensitive field effect transistors according to claim 1, characterized in that only one diode or one Diode as gate-controlled diode with reduced through breaking voltage is used. 5. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren, gekennzeich­ net dadurch, daß der Gateaufbau dieser Bauelemente zu­ sätzlich mit einem Doppelisolator versehen wird.5. Arrangement and procedure for increasing reliability of ion-sensitive field effect transistors, marked net in that the gate structure of these components is also provided with a double insulator. 6. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren nach Anspruch 5, gekennzeichnet dadurch, daß der dritte Isolator (9) aus reoxidiertem Si3N4 besteht.6. Arrangement and method for increasing the reliability of ion-sensitive field effect transistors according to claim 5, characterized in that the third insulator ( 9 ) consists of reoxidized Si3N4. 7. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren, gekennzeichnet dadurch, daß durch eine zeitweise Metallabdeckung des ionensensitiven Gates eine Zusatzpassivierung des Chips er­ möglicht wird.7. Arrangement and procedure for increasing reliability characterized by ion-sensitive field effect transistors characterized in that by a temporary metal cover of the ion-sensitive gates an additional passivation of the chip is possible. 8. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren nach Anspruch 7, gekennzeichnet dadurch, daß die Metallabdeckung entweder bereits auf dem Wafer oder erst nach vollständigen Füh­ leraufbau einschließlich Verkappung z. B. vor dem Meßein­ satz entfernt wird.8. Arrangement and procedure for increasing reliability ion-sensitive field effect transistors according to claim 7, characterized in that the metal cover either already on the wafer or only after complete lerbau including capping z. B. before the Messein sentence is removed. 9. Anordnung und Verfahren zur Erhöhung der Zuverlässigkeit von ionensensitiven Feldeffekttransistoren, gekennzeichnet dadurch, daß durch Präparation einer Lackstoppkante im Fensterbereich das Vergießen des Fühlers vereinfacht wird.9. Arrangement and procedure for increasing reliability characterized by ion-sensitive field effect transistors characterized in that by preparing a paint stop edge in Potting the sensor is simplified.
DE19924232532 1992-09-29 1992-09-29 Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode Withdrawn DE4232532A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19924232532 DE4232532A1 (en) 1992-09-29 1992-09-29 Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19924232532 DE4232532A1 (en) 1992-09-29 1992-09-29 Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode

Publications (1)

Publication Number Publication Date
DE4232532A1 true DE4232532A1 (en) 1994-04-28

Family

ID=6469069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19924232532 Withdrawn DE4232532A1 (en) 1992-09-29 1992-09-29 Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode

Country Status (1)

Country Link
DE (1) DE4232532A1 (en)

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0749632A1 (en) * 1994-01-19 1996-12-27 Honeywell Inc. Electrostatic discharge protection of isfet sensors
DE19856885A1 (en) * 1998-12-10 2000-06-29 Robert Bischoff Measuring probe and method for measuring the concentration of agents in gases and / or liquids
WO2003056322A1 (en) * 2001-12-21 2003-07-10 Forschungszentrum Jülich GmbH Fet sensor with a specially configured gate electrode for the highly sensitive detection of analytes
WO2005073706A1 (en) * 2004-01-21 2005-08-11 Rosemount Analytical Inc. Ion sensitive field effect transistor (isfet) sensor with improved gate configuration
WO2010112324A1 (en) * 2009-03-31 2010-10-07 Endress+Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh+Co. Kg Ion-sensitive sensor having a multilayer structure in a sensitive region
WO2011018310A1 (en) * 2009-08-12 2011-02-17 Endress+Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh+Co. Kg Ion-sensitive sensor having multilayer construction in the sensitive region
DE102012104770A1 (en) * 2012-06-01 2013-12-05 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Method for checking protective circuit of e.g. P-channel transistor to measure concentration of hydrogen ion in process automation field, involves outputting error message if measured values lie outside of tolerance range
CN103675024A (en) * 2012-09-08 2014-03-26 台湾积体电路制造股份有限公司 Direct sensing BioFET and methods of manufacture
EP2435128A4 (en) * 2009-05-29 2015-08-05 Life Technologies Corp Methods and apparatus for measuring analytes
US9239313B2 (en) 2010-06-30 2016-01-19 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US9269708B2 (en) 2006-12-14 2016-02-23 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US9404920B2 (en) 2006-12-14 2016-08-02 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US9671363B2 (en) 2013-03-15 2017-06-06 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US9823217B2 (en) 2013-03-15 2017-11-21 Life Technologies Corporation Chemical device with thin conductive element
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US9852919B2 (en) 2013-01-04 2017-12-26 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9927393B2 (en) 2009-05-29 2018-03-27 Life Technologies Corporation Methods and apparatus for measuring analytes
US9951382B2 (en) 2006-12-14 2018-04-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US9960253B2 (en) 2010-07-03 2018-05-01 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
US9964515B2 (en) 2008-10-22 2018-05-08 Life Technologies Corporation Integrated sensor arrays for biological and chemical analysis
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US9985624B2 (en) 2012-05-29 2018-05-29 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9995708B2 (en) 2013-03-13 2018-06-12 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US10100357B2 (en) 2013-05-09 2018-10-16 Life Technologies Corporation Windowed sequencing
US10379079B2 (en) 2014-12-18 2019-08-13 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10451585B2 (en) 2009-05-29 2019-10-22 Life Technologies Corporation Methods and apparatus for measuring analytes
US10605767B2 (en) 2014-12-18 2020-03-31 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
US10641729B2 (en) 2010-06-30 2020-05-05 Life Technologies Corporation Column ADC
US10816504B2 (en) 2013-06-10 2020-10-27 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US11231451B2 (en) 2010-06-30 2022-01-25 Life Technologies Corporation Methods and apparatus for testing ISFET arrays
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
EP0126184A2 (en) * 1982-12-23 1984-11-28 Motorola, Inc. Input protection circuit and bias method for scaled CMOS devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
EP0126184A2 (en) * 1982-12-23 1984-11-28 Motorola, Inc. Input protection circuit and bias method for scaled CMOS devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PHAM,M.T. *
u.a.: Feldeffekttransistor als chemi- scher Sensor. In: msr, Berlin 31,1988,8,S.365-369 *

Cited By (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0749632A1 (en) * 1994-01-19 1996-12-27 Honeywell Inc. Electrostatic discharge protection of isfet sensors
EP0749632A4 (en) * 1994-01-19 1999-11-24 Honeywell Inc Electrostatic discharge protection of isfet sensors
DE19856885A1 (en) * 1998-12-10 2000-06-29 Robert Bischoff Measuring probe and method for measuring the concentration of agents in gases and / or liquids
DE19856885C2 (en) * 1998-12-10 2001-03-15 Robert Bischoff Measuring probe and method for measuring the concentration of agents in gases and / or liquids
WO2003056322A1 (en) * 2001-12-21 2003-07-10 Forschungszentrum Jülich GmbH Fet sensor with a specially configured gate electrode for the highly sensitive detection of analytes
DE10163557B4 (en) * 2001-12-21 2007-12-06 Forschungszentrum Jülich GmbH Transistor-based sensor with specially designed gate electrode for high-sensitivity detection of analytes
US7632670B2 (en) 2001-12-21 2009-12-15 Forschungszentrum Julich Gmbh Fet sensor with specially configured gate electrode for the highly sensitive detection of analytes
WO2005073706A1 (en) * 2004-01-21 2005-08-11 Rosemount Analytical Inc. Ion sensitive field effect transistor (isfet) sensor with improved gate configuration
US9269708B2 (en) 2006-12-14 2016-02-23 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10203300B2 (en) 2006-12-14 2019-02-12 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10633699B2 (en) 2006-12-14 2020-04-28 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US9951382B2 (en) 2006-12-14 2018-04-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11732297B2 (en) * 2006-12-14 2023-08-22 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10502708B2 (en) 2006-12-14 2019-12-10 Life Technologies Corporation Chemically-sensitive sensor array calibration circuitry
US11435314B2 (en) 2006-12-14 2022-09-06 Life Technologies Corporation Chemically-sensitive sensor array device
US10415079B2 (en) 2006-12-14 2019-09-17 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US9989489B2 (en) 2006-12-14 2018-06-05 Life Technnologies Corporation Methods for calibrating an array of chemically-sensitive sensors
US9404920B2 (en) 2006-12-14 2016-08-02 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US10816506B2 (en) 2006-12-14 2020-10-27 Life Technologies Corporation Method for measuring analytes using large scale chemfet arrays
US20220340965A1 (en) * 2006-12-14 2022-10-27 Life Technologies Corporation Methods and Apparatus for Measuring Analytes Using Large Scale FET Arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11137369B2 (en) 2008-10-22 2021-10-05 Life Technologies Corporation Integrated sensor arrays for biological and chemical analysis
US11874250B2 (en) 2008-10-22 2024-01-16 Life Technologies Corporation Integrated sensor arrays for biological and chemical analysis
US11448613B2 (en) 2008-10-22 2022-09-20 Life Technologies Corporation ChemFET sensor array including overlying array of wells
US9964515B2 (en) 2008-10-22 2018-05-08 Life Technologies Corporation Integrated sensor arrays for biological and chemical analysis
WO2010112324A1 (en) * 2009-03-31 2010-10-07 Endress+Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh+Co. Kg Ion-sensitive sensor having a multilayer structure in a sensitive region
US8461587B2 (en) 2009-03-31 2013-06-11 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Ion-sensitive sensor with multilayer construction in the sensitive region
US9927393B2 (en) 2009-05-29 2018-03-27 Life Technologies Corporation Methods and apparatus for measuring analytes
US10451585B2 (en) 2009-05-29 2019-10-22 Life Technologies Corporation Methods and apparatus for measuring analytes
US10809226B2 (en) 2009-05-29 2020-10-20 Life Technologies Corporation Methods and apparatus for measuring analytes
US10718733B2 (en) 2009-05-29 2020-07-21 Life Technologies Corporation Methods and apparatus for measuring analytes
US11768171B2 (en) 2009-05-29 2023-09-26 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2435128A4 (en) * 2009-05-29 2015-08-05 Life Technologies Corp Methods and apparatus for measuring analytes
US11692964B2 (en) 2009-05-29 2023-07-04 Life Technologies Corporation Methods and apparatus for measuring analytes
WO2011018310A1 (en) * 2009-08-12 2011-02-17 Endress+Hauser Conducta Gesellschaft Für Mess- Und Regeltechnik Mbh+Co. Kg Ion-sensitive sensor having multilayer construction in the sensitive region
US8519447B2 (en) 2009-08-12 2013-08-27 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Ion sensitive sensor with multilayer construction in the sensor region
CN102472721B (en) * 2009-08-12 2015-01-28 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 Ion-sensitive sensor having multilayer construction in the sensitive region
CN102472721A (en) * 2009-08-12 2012-05-23 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 Ion-sensitive sensor having multilayer construction in the sensitive region
US10641729B2 (en) 2010-06-30 2020-05-05 Life Technologies Corporation Column ADC
US9239313B2 (en) 2010-06-30 2016-01-19 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US11231451B2 (en) 2010-06-30 2022-01-25 Life Technologies Corporation Methods and apparatus for testing ISFET arrays
US10481123B2 (en) 2010-06-30 2019-11-19 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
US9960253B2 (en) 2010-07-03 2018-05-01 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
US9958415B2 (en) 2010-09-15 2018-05-01 Life Technologies Corporation ChemFET sensor including floating gate
US10598723B2 (en) 2011-12-01 2020-03-24 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US10365321B2 (en) 2011-12-01 2019-07-30 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US10404249B2 (en) 2012-05-29 2019-09-03 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9985624B2 (en) 2012-05-29 2018-05-29 Life Technologies Corporation System for reducing noise in a chemical sensor array
DE102012104770A1 (en) * 2012-06-01 2013-12-05 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Method for checking protective circuit of e.g. P-channel transistor to measure concentration of hydrogen ion in process automation field, involves outputting error message if measured values lie outside of tolerance range
DE102012104770B4 (en) * 2012-06-01 2016-05-25 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Method for checking a protective circuit of an ion-sensitive field-effect transistor
CN103675024B (en) * 2012-09-08 2018-02-13 台湾积体电路制造股份有限公司 Directly sense BioFET and manufacture method
CN103675024A (en) * 2012-09-08 2014-03-26 台湾积体电路制造股份有限公司 Direct sensing BioFET and methods of manufacture
US9852919B2 (en) 2013-01-04 2017-12-26 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US10436742B2 (en) 2013-01-08 2019-10-08 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US9995708B2 (en) 2013-03-13 2018-06-12 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US9671363B2 (en) 2013-03-15 2017-06-06 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US10422767B2 (en) 2013-03-15 2019-09-24 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US9823217B2 (en) 2013-03-15 2017-11-21 Life Technologies Corporation Chemical device with thin conductive element
US10655175B2 (en) 2013-05-09 2020-05-19 Life Technologies Corporation Windowed sequencing
US11028438B2 (en) 2013-05-09 2021-06-08 Life Technologies Corporation Windowed sequencing
US10100357B2 (en) 2013-05-09 2018-10-16 Life Technologies Corporation Windowed sequencing
US10816504B2 (en) 2013-06-10 2020-10-27 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US11774401B2 (en) 2013-06-10 2023-10-03 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US11499938B2 (en) 2013-06-10 2022-11-15 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US10379079B2 (en) 2014-12-18 2019-08-13 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US11536688B2 (en) 2014-12-18 2022-12-27 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
US10605767B2 (en) 2014-12-18 2020-03-31 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
US10767224B2 (en) 2014-12-18 2020-09-08 Life Technologies Corporation High data rate integrated circuit with power management

Similar Documents

Publication Publication Date Title
DE4232532A1 (en) Ion-sensitive field effect transistor mfr. for higher reliability - involves electrostatic protection by diodes within well and substrate of CMOS structure in conjunction with pseudo-reference electrode
DE4333875C2 (en) Semiconductor gas sensor based on a capacitive controlled field effect transistor (CCFET)
RU2134877C1 (en) Protection of transducers on ion-selective field-effect transistors against electrostatic discharge
DE3226555C2 (en)
DE2832388C2 (en) Process for the production of MNOS and MOS transistors in silicon gate technology on a semiconductor substrate
DE3134343C2 (en) Semiconductor device
EP0138893B1 (en) Capacitive pressure sensor
DE2707843B2 (en) Protection circuit arrangement for a field effect transistor
DE69530716T2 (en) Accelerometer and method of making the same
DE1639255C2 (en) Integrated semiconductor circuit with an insulated gate field effect transistor
DE3413829C2 (en)
EP0005762A1 (en) Method to apply a tension with an electron beam
DE3918769A1 (en) Semiconductor pressure sensor and method for its fabrication
DE69233604T2 (en) STRUCTURE FOR THE SUPPRESSION OF A RETURN OF BOXES CAUSED BY A DIELECTRIC CHARGE
DE102017200452A1 (en) Method for manufacturing a semiconductor device
DE1910447B2 (en) Semiconductor component
DE4115398C2 (en)
DE3635259A1 (en) REDUNDANT WIRING IN A SEMICONDUCTOR DEVICE
DE2017172A1 (en) Semiconductor device, in particular integrated or monolithic semiconductor circuit with pn-junctions
DE10111462A1 (en) Thyristor structure and overvoltage protection arrangement with such a thyristor structure
DE3229205C2 (en)
DE2440325A1 (en) Photosensitive transistor with transparent saphire or spinel base - has source and drain zones in epitaxial silicon layer above base
DE69432662T2 (en) Protection device for a series-connected MOSFET
DD275958A1 (en) CHEMICAL SENSOR WITH ELECTROSTATIC PROTECTION
KR100241539B1 (en) Method for forming gate electrode of semiconductor device

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8127 New person/name/address of the applicant

Owner name: CENTRUM FUER INTELLIGENTE SENSORIK ERFURT E.V. (CI

8139 Disposal/non-payment of the annual fee