DE4192215T1 - Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler - Google Patents
Transistorgeräte mit isoliertem Gate und Temperatur- und StromfühlerInfo
- Publication number
- DE4192215T1 DE4192215T1 DE4192215T DE4192215T DE4192215T1 DE 4192215 T1 DE4192215 T1 DE 4192215T1 DE 4192215 T DE4192215 T DE 4192215T DE 4192215 T DE4192215 T DE 4192215T DE 4192215 T1 DE4192215 T1 DE 4192215T1
- Authority
- DE
- Germany
- Prior art keywords
- temperature
- insulated gate
- gate transistor
- current sensors
- transistor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/585,847 US5063307A (en) | 1990-09-20 | 1990-09-20 | Insulated gate transistor devices with temperature and current sensor |
PCT/US1991/006741 WO1992005481A1 (en) | 1990-09-20 | 1991-09-17 | Insulated gate transistor devices with temperature and current sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE4192215T1 true DE4192215T1 (de) | 1997-07-24 |
Family
ID=24343217
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4192215T Pending DE4192215T1 (de) | 1990-09-20 | 1991-09-17 | Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler |
DE4192215A Expired - Lifetime DE4192215B4 (de) | 1990-09-20 | 1991-09-17 | Halbleiterbauelement mit Temperaturerfassungsschaltung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4192215A Expired - Lifetime DE4192215B4 (de) | 1990-09-20 | 1991-09-17 | Halbleiterbauelement mit Temperaturerfassungsschaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5063307A (de) |
DE (2) | DE4192215T1 (de) |
GB (1) | GB2264391A (de) |
WO (1) | WO1992005481A1 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5237194A (en) * | 1990-04-27 | 1993-08-17 | Nec Corporation | Power semiconductor device |
DE4122653C2 (de) * | 1991-07-09 | 1996-04-11 | Daimler Benz Ag | Steuerbare Halbleiterschalteinrichtung mit integrierter Strombegrenzung und Übertemperaturabschaltung |
FR2680925B1 (fr) * | 1991-08-27 | 1993-12-17 | Sextant Avionique | Interrupteur statique a faibles pertes. |
US5543632A (en) * | 1991-10-24 | 1996-08-06 | International Business Machines Corporation | Temperature monitoring pilot transistor |
US5304837A (en) * | 1992-01-08 | 1994-04-19 | Siemens Aktiengesellschaft | Monolithically integrated temperature sensor for power semiconductor components |
DE69309337T2 (de) * | 1992-02-03 | 1997-10-23 | Philips Electronics Nv | Komparatorschaltung mit Eingangssignaldämpfungsglied |
GB9206058D0 (en) * | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | A semiconductor switch and a temperature sensing circuit for such a switch |
US5408141A (en) * | 1993-01-04 | 1995-04-18 | Texas Instruments Incorporated | Sensed current driving device |
JPH07161992A (ja) * | 1993-10-14 | 1995-06-23 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JPH07235672A (ja) * | 1994-02-21 | 1995-09-05 | Mitsubishi Electric Corp | 絶縁ゲート型半導体装置およびその製造方法 |
US5654896A (en) * | 1994-10-31 | 1997-08-05 | Ixys Corp | Performance prediction method for semiconductor power modules and ICS |
US6092927A (en) * | 1994-11-10 | 2000-07-25 | International Rectifier Corp. | Temperature detection of power semiconductors performed by a co-packaged analog integrated circuit |
JP3627385B2 (ja) * | 1996-06-28 | 2005-03-09 | 株式会社デンソー | 電流検出機能を有する負荷電流供給回路 |
US5838187A (en) * | 1997-02-10 | 1998-11-17 | Lucent Technologies Inc. | Integrated circuit thermal shutdown system utilizing a thermal sensor |
US5902044A (en) * | 1997-06-27 | 1999-05-11 | International Business Machines Corporation | Integrated hot spot detector for design, analysis, and control |
US6534711B1 (en) | 1998-04-14 | 2003-03-18 | The Goodyear Tire & Rubber Company | Encapsulation package and method of packaging an electronic circuit module |
US6543279B1 (en) | 1998-04-14 | 2003-04-08 | The Goodyear Tire & Rubber Company | Pneumatic tire having transponder and method of measuring pressure within a pneumatic tire |
US6412977B1 (en) | 1998-04-14 | 2002-07-02 | The Goodyear Tire & Rubber Company | Method for measuring temperature with an integrated circuit device |
DE19821834A1 (de) * | 1998-05-15 | 1999-11-25 | Fahrzeugklimaregelung Gmbh | Power-Mos-Transistor |
SE512796C2 (sv) * | 1998-09-18 | 2000-05-15 | Ericsson Telefon Ab L M | Förfarande jämte anordning för att mäta temperatur i en halvledarkomponent |
US6552597B1 (en) * | 2001-11-02 | 2003-04-22 | Power Integrations, Inc. | Integrated circuit with closely coupled high voltage output and offline transistor pair |
US7118273B1 (en) * | 2003-04-10 | 2006-10-10 | Transmeta Corporation | System for on-chip temperature measurement in integrated circuits |
US8334451B2 (en) * | 2003-10-03 | 2012-12-18 | Ixys Corporation | Discrete and integrated photo voltaic solar cells |
US7212023B2 (en) * | 2004-09-07 | 2007-05-01 | Texas Instruments Incorporated | System and method for accurate negative bias temperature instability characterization |
US7306999B2 (en) | 2005-01-25 | 2007-12-11 | Semiconductor Components Industries, L.L.C. | High voltage sensor device and method therefor |
US7955943B2 (en) * | 2005-01-25 | 2011-06-07 | Semiconductor Components Industries, Llc | High voltage sensor device and method therefor |
EP1691484B1 (de) * | 2005-02-10 | 2016-08-17 | STMicroelectronics Srl | Thermische Schutzvorrichtung für einen integrierten MOS Leistungstransistor |
US7798703B2 (en) * | 2007-05-09 | 2010-09-21 | Infineon Technologies Ag | Apparatus and method for measuring local surface temperature of semiconductor device |
US8985850B1 (en) * | 2009-10-30 | 2015-03-24 | Cypress Semiconductor Corporation | Adaptive gate driver strength control |
JP5703675B2 (ja) * | 2010-10-13 | 2015-04-22 | 富士電機株式会社 | センス機能付きパワー半導体デバイス |
KR101276947B1 (ko) * | 2011-06-27 | 2013-06-19 | 엘에스산전 주식회사 | 저전력, 고정밀, 넓은 온도범위의 온도 센서 |
US8442712B2 (en) * | 2011-08-31 | 2013-05-14 | Caterpillar Inc. | System and method to thermally protect a transistor in an electric drive vehicle |
US9536876B2 (en) * | 2013-08-01 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Temperature detector and controlling heat |
JP2015154658A (ja) * | 2014-02-18 | 2015-08-24 | セイコーエプソン株式会社 | 回路装置及び電子機器 |
US9461639B2 (en) * | 2014-05-16 | 2016-10-04 | Freescale Semiconductor, Inc. | Semiconductor device and power circuit including a sense transistor for current sensing |
EP3183753A4 (de) | 2014-08-19 | 2018-01-10 | Vishay-Siliconix | Elektronische schaltung |
US9897648B2 (en) * | 2015-04-03 | 2018-02-20 | Cosemi Technologies, Inc. | On-chip built-in test and operational qualification |
DE102018221910A1 (de) | 2018-12-17 | 2020-06-18 | Robert Bosch Gmbh | Leistungstransistor sowie Leistungstransistoranordnung |
EP3734244B1 (de) * | 2019-05-02 | 2021-11-10 | Siemens Aktiengesellschaft | Schaltungsanordnung und verfahren zur steuerung eines leistungshalbleiterschalters |
JP7343333B2 (ja) * | 2019-08-27 | 2023-09-12 | 日立Astemo株式会社 | 電力変換装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3209070C2 (de) * | 1982-03-12 | 1994-03-17 | Siemens Ag | Schaltungsanordnung zum Schalten elektrischer Lasten |
US4783690A (en) * | 1983-09-06 | 1988-11-08 | General Electric Company | Power semiconductor device with main current section and emulation current section |
US4599554A (en) * | 1984-12-10 | 1986-07-08 | Texet Corportion | Vertical MOSFET with current monitor utilizing common drain current mirror |
US4680490A (en) * | 1985-04-02 | 1987-07-14 | Gould Inc. | MOSFET AC switch |
US4682195A (en) * | 1985-09-30 | 1987-07-21 | General Electric Company | Insulated gate device with configured emitter contact pad |
US4779123A (en) * | 1985-12-13 | 1988-10-18 | Siliconix Incorporated | Insulated gate transistor array |
US4785207A (en) * | 1987-01-21 | 1988-11-15 | Hughes Aircraft Company | Leakage regulator circuit for a field effect transistor |
US4811065A (en) * | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
US4931844A (en) * | 1988-03-09 | 1990-06-05 | Ixys Corporation | High power transistor with voltage, current, power, resistance, and temperature sensing capability |
-
1990
- 1990-09-20 US US07/585,847 patent/US5063307A/en not_active Expired - Lifetime
-
1991
- 1991-09-17 WO PCT/US1991/006741 patent/WO1992005481A1/en active Application Filing
- 1991-09-17 DE DE4192215T patent/DE4192215T1/de active Pending
- 1991-09-17 DE DE4192215A patent/DE4192215B4/de not_active Expired - Lifetime
-
1993
- 1993-03-17 GB GB9305803A patent/GB2264391A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO1992005481A1 (en) | 1992-04-02 |
GB2264391A (en) | 1993-08-25 |
GB9305803D0 (en) | 1993-06-02 |
DE4192215B4 (de) | 2004-02-26 |
US5063307A (en) | 1991-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE4192215T1 (de) | Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler | |
DE69213539D1 (de) | Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor | |
DE69309193D1 (de) | Halbleiteranordnung mit isoliertem Gate | |
DE3856545T2 (de) | Halbleiterbauelement mit isoliertem Gatter | |
DE3688222T2 (de) | Halbleitereinrichtung mit bipolarem transistor und isolierschicht-feldeffekttransistor. | |
DE69027832T2 (de) | Feld-Effekt-Transistor mit Gate-Abstandsstück | |
DE69224616D1 (de) | Temperaturregeleinrichtung und kalibrierverfahren | |
DE69414311D1 (de) | Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate | |
DE69511726T2 (de) | Halbleiteranordnung mit isoliertem gate | |
DE69305909T2 (de) | Leistungsanordnung mit isoliertem Gate-Kontakt-Gebiet | |
DE69526534T2 (de) | Bipolartransistor mit isoliertem Gate | |
DE69325120T2 (de) | Halbleiterschalter mit Temperaturfühler | |
DE69314368D1 (de) | Halbleiterbauelement mit isoliertem Gate und dessen Herstellungsverfahren | |
DE69426045T2 (de) | Bipolartransistor mit isoliertem Gate | |
DE69223719D1 (de) | Feldeffekttransistor mit isoliertem Gate vom Anreicherungstyp mit gesteuerter Anstiegszeit an der Drain-Ausgangselektrode | |
DE3782748T2 (de) | Feldeffekttransistor mit isoliertem gate. | |
DE69215935T2 (de) | Laterale Feldeffekthalbleiteranordnung mit isolierter Gateelektrode | |
DE69028161D1 (de) | Halbleiteranordnung mit isoliertem Gate | |
DE69233306D1 (de) | Bipolartransistor mit isoliertem gate | |
DE3855533T2 (de) | Halbleiteranordnung mit isoliertem Gate | |
DE69314292T2 (de) | Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft | |
DE69310559T2 (de) | Schaltungs-Halbleiterbauteil mit Gate | |
DE69432111D1 (de) | Bipolartransistor mit isoliertem Gate | |
DE69738059D1 (de) | Feldeffekttransistor mit isolierter Steuerelektrode | |
DE69130024T2 (de) | Integrierte Schaltung mit isoliertem Gate |