DE4192215T1 - Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler - Google Patents

Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler

Info

Publication number
DE4192215T1
DE4192215T1 DE4192215T DE4192215T DE4192215T1 DE 4192215 T1 DE4192215 T1 DE 4192215T1 DE 4192215 T DE4192215 T DE 4192215T DE 4192215 T DE4192215 T DE 4192215T DE 4192215 T1 DE4192215 T1 DE 4192215T1
Authority
DE
Germany
Prior art keywords
temperature
insulated gate
gate transistor
current sensors
transistor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE4192215T
Other languages
English (en)
Other versions
DE4192215B4 (de
Inventor
Nathan Zommer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IXYS LLC
Original Assignee
IXYS LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IXYS LLC filed Critical IXYS LLC
Publication of DE4192215T1 publication Critical patent/DE4192215T1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7815Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
DE4192215T 1990-09-20 1991-09-17 Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler Pending DE4192215T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/585,847 US5063307A (en) 1990-09-20 1990-09-20 Insulated gate transistor devices with temperature and current sensor
PCT/US1991/006741 WO1992005481A1 (en) 1990-09-20 1991-09-17 Insulated gate transistor devices with temperature and current sensor

Publications (1)

Publication Number Publication Date
DE4192215T1 true DE4192215T1 (de) 1997-07-24

Family

ID=24343217

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4192215T Pending DE4192215T1 (de) 1990-09-20 1991-09-17 Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler
DE4192215A Expired - Lifetime DE4192215B4 (de) 1990-09-20 1991-09-17 Halbleiterbauelement mit Temperaturerfassungsschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE4192215A Expired - Lifetime DE4192215B4 (de) 1990-09-20 1991-09-17 Halbleiterbauelement mit Temperaturerfassungsschaltung

Country Status (4)

Country Link
US (1) US5063307A (de)
DE (2) DE4192215T1 (de)
GB (1) GB2264391A (de)
WO (1) WO1992005481A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237194A (en) * 1990-04-27 1993-08-17 Nec Corporation Power semiconductor device
DE4122653C2 (de) * 1991-07-09 1996-04-11 Daimler Benz Ag Steuerbare Halbleiterschalteinrichtung mit integrierter Strombegrenzung und Übertemperaturabschaltung
FR2680925B1 (fr) * 1991-08-27 1993-12-17 Sextant Avionique Interrupteur statique a faibles pertes.
US5543632A (en) * 1991-10-24 1996-08-06 International Business Machines Corporation Temperature monitoring pilot transistor
US5304837A (en) * 1992-01-08 1994-04-19 Siemens Aktiengesellschaft Monolithically integrated temperature sensor for power semiconductor components
DE69309337T2 (de) * 1992-02-03 1997-10-23 Philips Electronics Nv Komparatorschaltung mit Eingangssignaldämpfungsglied
GB9206058D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd A semiconductor switch and a temperature sensing circuit for such a switch
US5408141A (en) * 1993-01-04 1995-04-18 Texas Instruments Incorporated Sensed current driving device
JPH07161992A (ja) * 1993-10-14 1995-06-23 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
US5654896A (en) * 1994-10-31 1997-08-05 Ixys Corp Performance prediction method for semiconductor power modules and ICS
US6092927A (en) * 1994-11-10 2000-07-25 International Rectifier Corp. Temperature detection of power semiconductors performed by a co-packaged analog integrated circuit
JP3627385B2 (ja) * 1996-06-28 2005-03-09 株式会社デンソー 電流検出機能を有する負荷電流供給回路
US5838187A (en) * 1997-02-10 1998-11-17 Lucent Technologies Inc. Integrated circuit thermal shutdown system utilizing a thermal sensor
US5902044A (en) * 1997-06-27 1999-05-11 International Business Machines Corporation Integrated hot spot detector for design, analysis, and control
US6534711B1 (en) 1998-04-14 2003-03-18 The Goodyear Tire & Rubber Company Encapsulation package and method of packaging an electronic circuit module
US6543279B1 (en) 1998-04-14 2003-04-08 The Goodyear Tire & Rubber Company Pneumatic tire having transponder and method of measuring pressure within a pneumatic tire
US6412977B1 (en) 1998-04-14 2002-07-02 The Goodyear Tire & Rubber Company Method for measuring temperature with an integrated circuit device
DE19821834A1 (de) * 1998-05-15 1999-11-25 Fahrzeugklimaregelung Gmbh Power-Mos-Transistor
SE512796C2 (sv) * 1998-09-18 2000-05-15 Ericsson Telefon Ab L M Förfarande jämte anordning för att mäta temperatur i en halvledarkomponent
US6552597B1 (en) * 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US7118273B1 (en) * 2003-04-10 2006-10-10 Transmeta Corporation System for on-chip temperature measurement in integrated circuits
US8334451B2 (en) * 2003-10-03 2012-12-18 Ixys Corporation Discrete and integrated photo voltaic solar cells
US7212023B2 (en) * 2004-09-07 2007-05-01 Texas Instruments Incorporated System and method for accurate negative bias temperature instability characterization
US7306999B2 (en) 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
EP1691484B1 (de) * 2005-02-10 2016-08-17 STMicroelectronics Srl Thermische Schutzvorrichtung für einen integrierten MOS Leistungstransistor
US7798703B2 (en) * 2007-05-09 2010-09-21 Infineon Technologies Ag Apparatus and method for measuring local surface temperature of semiconductor device
US8985850B1 (en) * 2009-10-30 2015-03-24 Cypress Semiconductor Corporation Adaptive gate driver strength control
JP5703675B2 (ja) * 2010-10-13 2015-04-22 富士電機株式会社 センス機能付きパワー半導体デバイス
KR101276947B1 (ko) * 2011-06-27 2013-06-19 엘에스산전 주식회사 저전력, 고정밀, 넓은 온도범위의 온도 센서
US8442712B2 (en) * 2011-08-31 2013-05-14 Caterpillar Inc. System and method to thermally protect a transistor in an electric drive vehicle
US9536876B2 (en) * 2013-08-01 2017-01-03 Taiwan Semiconductor Manufacturing Company Ltd. Temperature detector and controlling heat
JP2015154658A (ja) * 2014-02-18 2015-08-24 セイコーエプソン株式会社 回路装置及び電子機器
US9461639B2 (en) * 2014-05-16 2016-10-04 Freescale Semiconductor, Inc. Semiconductor device and power circuit including a sense transistor for current sensing
EP3183753A4 (de) 2014-08-19 2018-01-10 Vishay-Siliconix Elektronische schaltung
US9897648B2 (en) * 2015-04-03 2018-02-20 Cosemi Technologies, Inc. On-chip built-in test and operational qualification
DE102018221910A1 (de) 2018-12-17 2020-06-18 Robert Bosch Gmbh Leistungstransistor sowie Leistungstransistoranordnung
EP3734244B1 (de) * 2019-05-02 2021-11-10 Siemens Aktiengesellschaft Schaltungsanordnung und verfahren zur steuerung eines leistungshalbleiterschalters
JP7343333B2 (ja) * 2019-08-27 2023-09-12 日立Astemo株式会社 電力変換装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3209070C2 (de) * 1982-03-12 1994-03-17 Siemens Ag Schaltungsanordnung zum Schalten elektrischer Lasten
US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
US4599554A (en) * 1984-12-10 1986-07-08 Texet Corportion Vertical MOSFET with current monitor utilizing common drain current mirror
US4680490A (en) * 1985-04-02 1987-07-14 Gould Inc. MOSFET AC switch
US4682195A (en) * 1985-09-30 1987-07-21 General Electric Company Insulated gate device with configured emitter contact pad
US4779123A (en) * 1985-12-13 1988-10-18 Siliconix Incorporated Insulated gate transistor array
US4785207A (en) * 1987-01-21 1988-11-15 Hughes Aircraft Company Leakage regulator circuit for a field effect transistor
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
US4931844A (en) * 1988-03-09 1990-06-05 Ixys Corporation High power transistor with voltage, current, power, resistance, and temperature sensing capability

Also Published As

Publication number Publication date
WO1992005481A1 (en) 1992-04-02
GB2264391A (en) 1993-08-25
GB9305803D0 (en) 1993-06-02
DE4192215B4 (de) 2004-02-26
US5063307A (en) 1991-11-05

Similar Documents

Publication Publication Date Title
DE4192215T1 (de) Transistorgeräte mit isoliertem Gate und Temperatur- und Stromfühler
DE69213539D1 (de) Halbleitervorrichtung mit verbessertem isoliertem Gate-Transistor
DE69309193D1 (de) Halbleiteranordnung mit isoliertem Gate
DE3856545T2 (de) Halbleiterbauelement mit isoliertem Gatter
DE3688222T2 (de) Halbleitereinrichtung mit bipolarem transistor und isolierschicht-feldeffekttransistor.
DE69027832T2 (de) Feld-Effekt-Transistor mit Gate-Abstandsstück
DE69224616D1 (de) Temperaturregeleinrichtung und kalibrierverfahren
DE69414311D1 (de) Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate
DE69511726T2 (de) Halbleiteranordnung mit isoliertem gate
DE69305909T2 (de) Leistungsanordnung mit isoliertem Gate-Kontakt-Gebiet
DE69526534T2 (de) Bipolartransistor mit isoliertem Gate
DE69325120T2 (de) Halbleiterschalter mit Temperaturfühler
DE69314368D1 (de) Halbleiterbauelement mit isoliertem Gate und dessen Herstellungsverfahren
DE69426045T2 (de) Bipolartransistor mit isoliertem Gate
DE69223719D1 (de) Feldeffekttransistor mit isoliertem Gate vom Anreicherungstyp mit gesteuerter Anstiegszeit an der Drain-Ausgangselektrode
DE3782748T2 (de) Feldeffekttransistor mit isoliertem gate.
DE69215935T2 (de) Laterale Feldeffekthalbleiteranordnung mit isolierter Gateelektrode
DE69028161D1 (de) Halbleiteranordnung mit isoliertem Gate
DE69233306D1 (de) Bipolartransistor mit isoliertem gate
DE3855533T2 (de) Halbleiteranordnung mit isoliertem Gate
DE69314292T2 (de) Heteroübergangsfeldeffekttransistor mit verbesserter Transistorseigenschaft
DE69310559T2 (de) Schaltungs-Halbleiterbauteil mit Gate
DE69432111D1 (de) Bipolartransistor mit isoliertem Gate
DE69738059D1 (de) Feldeffekttransistor mit isolierter Steuerelektrode
DE69130024T2 (de) Integrierte Schaltung mit isoliertem Gate