DE3880661D1 - Eingangsschutzstruktur fuer integrierte schaltung. - Google Patents

Eingangsschutzstruktur fuer integrierte schaltung.

Info

Publication number
DE3880661D1
DE3880661D1 DE8888420416T DE3880661T DE3880661D1 DE 3880661 D1 DE3880661 D1 DE 3880661D1 DE 8888420416 T DE8888420416 T DE 8888420416T DE 3880661 T DE3880661 T DE 3880661T DE 3880661 D1 DE3880661 D1 DE 3880661D1
Authority
DE
Germany
Prior art keywords
integrated circuit
protection structure
input protection
input
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888420416T
Other languages
English (en)
Other versions
DE3880661T2 (de
Inventor
Francois Tailliet
Jean-Marie Gaultier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE3880661D1 publication Critical patent/DE3880661D1/de
Application granted granted Critical
Publication of DE3880661T2 publication Critical patent/DE3880661T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
DE88420416T 1987-12-14 1988-12-14 Eingangsschutzstruktur für integrierte Schaltung. Expired - Fee Related DE3880661T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8717781A FR2624655B1 (fr) 1987-12-14 1987-12-14 Structure de protection d'un acces a un circuit integre

Publications (2)

Publication Number Publication Date
DE3880661D1 true DE3880661D1 (de) 1993-06-03
DE3880661T2 DE3880661T2 (de) 1993-12-23

Family

ID=9358074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88420416T Expired - Fee Related DE3880661T2 (de) 1987-12-14 1988-12-14 Eingangsschutzstruktur für integrierte Schaltung.

Country Status (6)

Country Link
US (1) US4897757A (de)
EP (1) EP0326777B1 (de)
JP (1) JP2656588B2 (de)
KR (1) KR890011095A (de)
DE (1) DE3880661T2 (de)
FR (1) FR2624655B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69029271T2 (de) * 1990-12-21 1997-04-17 Sgs Thomson Microelectronics Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur
US5196981A (en) * 1990-12-28 1993-03-23 National Semiconductor Corporation ESD protection scheme
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
EP0517391A1 (de) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD-Schutzschaltung
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
US5139959A (en) * 1992-01-21 1992-08-18 Motorola, Inc. Method for forming bipolar transistor input protection
US5384482A (en) * 1992-05-18 1995-01-24 Nec Corporation Semiconductor integrated circuit device having input protective circuit
DE69227106T2 (de) * 1992-06-30 1999-04-01 St Microelectronics Srl Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
IT1296832B1 (it) * 1997-12-02 1999-08-02 Sgs Thomson Microelectronics Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
US7332750B1 (en) 2000-09-01 2008-02-19 Fairchild Semiconductor Corporation Power semiconductor device with improved unclamped inductive switching capability and process for forming same
US8355015B2 (en) * 2004-05-21 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device including a diode electrically connected to a signal line

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE363829C (de) * 1920-07-29 1922-11-14 Jakob Hammel Einschlagduebel
US3201682A (en) * 1960-09-23 1965-08-17 Philips Corp Voltage stabilization using a plurality of transistors and a zener diode
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
JPS5714216A (en) * 1980-06-30 1982-01-25 Mitsubishi Electric Corp Input protecting circuit
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
US4527213A (en) * 1981-11-27 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with circuits for protecting an input section against an external surge
JPS6180848A (ja) * 1984-09-28 1986-04-24 Hitachi Ltd 静電破壊防止素子およびその製造方法
GB2185621B (en) * 1985-10-29 1988-12-14 Plessey Co Plc Protection structures
US4802054A (en) * 1987-03-13 1989-01-31 Motorola, Inc. Input protection for an integrated circuit

Also Published As

Publication number Publication date
EP0326777B1 (de) 1993-04-28
FR2624655A1 (fr) 1989-06-16
EP0326777A1 (de) 1989-08-09
KR890011095A (ko) 1989-08-12
FR2624655B1 (fr) 1990-05-11
US4897757A (en) 1990-01-30
JP2656588B2 (ja) 1997-09-24
DE3880661T2 (de) 1993-12-23
JPH022153A (ja) 1990-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee