DE3872922T2 - Verfahren zur herstellung von lanthankuprat-einkristall. - Google Patents

Verfahren zur herstellung von lanthankuprat-einkristall.

Info

Publication number
DE3872922T2
DE3872922T2 DE8888104090T DE3872922T DE3872922T2 DE 3872922 T2 DE3872922 T2 DE 3872922T2 DE 8888104090 T DE8888104090 T DE 8888104090T DE 3872922 T DE3872922 T DE 3872922T DE 3872922 T2 DE3872922 T2 DE 3872922T2
Authority
DE
Germany
Prior art keywords
lanthane
production
single crystal
super single
super
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888104090T
Other languages
English (en)
Other versions
DE3872922D1 (de
Inventor
Kunihiko Oka
Hiromi Unoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62109518A external-priority patent/JPS63274696A/ja
Priority claimed from JP62109519A external-priority patent/JPS63274697A/ja
Priority claimed from JP62109517A external-priority patent/JPS63274695A/ja
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Application granted granted Critical
Publication of DE3872922D1 publication Critical patent/DE3872922D1/de
Publication of DE3872922T2 publication Critical patent/DE3872922T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic materials
    • H10N60/857—Ceramic materials comprising copper oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
DE8888104090T 1987-05-01 1988-03-15 Verfahren zur herstellung von lanthankuprat-einkristall. Expired - Fee Related DE3872922T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62109518A JPS63274696A (ja) 1987-05-01 1987-05-01 銅酸ランタン単結晶の製造方法
JP62109519A JPS63274697A (ja) 1987-05-01 1987-05-01 銅酸ランタン単結晶の製造方法
JP62109517A JPS63274695A (ja) 1987-05-01 1987-05-01 銅酸ランタン単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE3872922D1 DE3872922D1 (de) 1992-08-27
DE3872922T2 true DE3872922T2 (de) 1992-12-03

Family

ID=27311488

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888104090T Expired - Fee Related DE3872922T2 (de) 1987-05-01 1988-03-15 Verfahren zur herstellung von lanthankuprat-einkristall.

Country Status (3)

Country Link
US (2) US4956334A (de)
EP (1) EP0288709B1 (de)
DE (1) DE3872922T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162297A (en) * 1987-06-11 1992-11-10 Kabushiki Kaisha Toshiba Liquid phase epitaxial growth of high temperature superconducting oxide wafer
US5077271A (en) * 1988-12-02 1991-12-31 Hewlett-Packard Company Liquid phase epitaxial method for forming single crystal films of high temperature oxide superconductors
US5444040A (en) * 1989-12-18 1995-08-22 Seiko Epson Corporation Superconductive oxide single crystal and manufacturing method thereof
EP0404966B2 (de) * 1989-01-14 1999-04-07 Sumitomo Electric Industries, Ltd. Verfahren zur herstellung eines supraleitfähigen drahts vom keramischen typ
JPH04285090A (ja) * 1991-03-14 1992-10-09 Tdk Corp 単結晶育成方法
US5308800A (en) * 1992-03-23 1994-05-03 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for forming textured bulk high temperature superconducting materials
JP2794245B2 (ja) * 1992-04-15 1998-09-03 財団法人国際超電導産業技術研究センター Ｂｉ系酸化物超電導体単結晶の製造方法
JP2740427B2 (ja) * 1992-05-25 1998-04-15 財団法人国際超電導産業技術研究センター 酸化物結晶の作製方法
US5602081A (en) * 1993-05-10 1997-02-11 International Superconductivity Technology Center Method of preparing metal oxide crystal
JPH06321695A (ja) * 1993-05-10 1994-11-22 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Ｙ１２３型結晶構造を有する酸化物結晶膜及び膜積層体
DE4324088A1 (de) * 1993-07-17 1995-01-19 Hoechst Ag Hochtemperatursupraleitende Massivkörper und Verfahren zu ihrer Herstellung
US6937609B1 (en) 1999-05-25 2005-08-30 Cingular Wireless Ii, Inc. Method for improving efficiency in a time sharing network
JP2002005745A (ja) * 2000-06-26 2002-01-09 Nec Corp 温度測定装置、および温度測定方法
WO2005042669A1 (ja) * 2003-10-30 2005-05-12 Japan Science And Technology Agency 電界発光材料及びそれを用いた電界発光素子
CN101798103B (zh) * 2010-01-29 2011-12-21 北京工业大学 一种制备三维大孔结构的正交晶相La2CuO4的胶质晶模板法
CN102502767A (zh) * 2011-11-23 2012-06-20 陕西科技大学 溶胶凝胶-水热法制备铜酸镧（La2CuO4）粉体的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE811057A (fr) * 1974-02-15 1974-08-16 Elphiac Sa Machine universelle pour l'elaboration de monocristaux de materiaux semiconducteurs ou autres suivant les methodes classiques.
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed

Also Published As

Publication number Publication date
EP0288709A1 (de) 1988-11-02
DE3872922D1 (de) 1992-08-27
EP0288709B1 (de) 1992-07-22
US5057492A (en) 1991-10-15
US4956334A (en) 1990-09-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee