DE3872922D1 - Verfahren zur herstellung von lanthankuprat-einkristall. - Google Patents
Verfahren zur herstellung von lanthankuprat-einkristall.Info
- Publication number
- DE3872922D1 DE3872922D1 DE8888104090T DE3872922T DE3872922D1 DE 3872922 D1 DE3872922 D1 DE 3872922D1 DE 8888104090 T DE8888104090 T DE 8888104090T DE 3872922 T DE3872922 T DE 3872922T DE 3872922 D1 DE3872922 D1 DE 3872922D1
- Authority
- DE
- Germany
- Prior art keywords
- lanthane
- production
- single crystal
- super single
- super
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic materials
- H10N60/857—Ceramic materials comprising copper oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62109519A JPS63274697A (ja) | 1987-05-01 | 1987-05-01 | 銅酸ランタン単結晶の製造方法 |
JP62109518A JPS63274696A (ja) | 1987-05-01 | 1987-05-01 | 銅酸ランタン単結晶の製造方法 |
JP62109517A JPS63274695A (ja) | 1987-05-01 | 1987-05-01 | 銅酸ランタン単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3872922D1 true DE3872922D1 (de) | 1992-08-27 |
DE3872922T2 DE3872922T2 (de) | 1992-12-03 |
Family
ID=27311488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888104090T Expired - Fee Related DE3872922T2 (de) | 1987-05-01 | 1988-03-15 | Verfahren zur herstellung von lanthankuprat-einkristall. |
Country Status (3)
Country | Link |
---|---|
US (2) | US4956334A (de) |
EP (1) | EP0288709B1 (de) |
DE (1) | DE3872922T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5162297A (en) * | 1987-06-11 | 1992-11-10 | Kabushiki Kaisha Toshiba | Liquid phase epitaxial growth of high temperature superconducting oxide wafer |
US5077271A (en) * | 1988-12-02 | 1991-12-31 | Hewlett-Packard Company | Liquid phase epitaxial method for forming single crystal films of high temperature oxide superconductors |
US5444040A (en) * | 1989-12-18 | 1995-08-22 | Seiko Epson Corporation | Superconductive oxide single crystal and manufacturing method thereof |
DE69014437T3 (de) * | 1989-01-14 | 1999-08-19 | Sumitomo Electric Industries | Verfahren zur herstellung eines supraleitfähigen drahts vom keramischen typ. |
JPH04285090A (ja) * | 1991-03-14 | 1992-10-09 | Tdk Corp | 単結晶育成方法 |
US5308800A (en) * | 1992-03-23 | 1994-05-03 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus and method for forming textured bulk high temperature superconducting materials |
JP2794245B2 (ja) * | 1992-04-15 | 1998-09-03 | 財団法人国際超電導産業技術研究センター | Bi系酸化物超電導体単結晶の製造方法 |
JP2740427B2 (ja) * | 1992-05-25 | 1998-04-15 | 財団法人国際超電導産業技術研究センター | 酸化物結晶の作製方法 |
DE69415716T2 (de) * | 1993-05-10 | 1999-11-04 | Int Superconductivity Tech | Verfahren zur Herstellung eines Metalloxid-Kristalls |
JPH06321695A (ja) * | 1993-05-10 | 1994-11-22 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Y123型結晶構造を有する酸化物結晶膜及び膜積層体 |
DE4324088A1 (de) * | 1993-07-17 | 1995-01-19 | Hoechst Ag | Hochtemperatursupraleitende Massivkörper und Verfahren zu ihrer Herstellung |
US6937609B1 (en) | 1999-05-25 | 2005-08-30 | Cingular Wireless Ii, Inc. | Method for improving efficiency in a time sharing network |
JP2002005745A (ja) * | 2000-06-26 | 2002-01-09 | Nec Corp | 温度測定装置、および温度測定方法 |
US7674399B2 (en) * | 2003-10-30 | 2010-03-09 | Japan Science And Technology Agency | Electroluminescent material and electroluminescent element using the same |
CN101798103B (zh) * | 2010-01-29 | 2011-12-21 | 北京工业大学 | 一种制备三维大孔结构的正交晶相La2CuO4的胶质晶模板法 |
CN102502767A (zh) * | 2011-11-23 | 2012-06-20 | 陕西科技大学 | 溶胶凝胶-水热法制备铜酸镧(La2CuO4)粉体的方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE811057A (fr) * | 1974-02-15 | 1974-08-16 | Elphiac Sa | Machine universelle pour l'elaboration de monocristaux de materiaux semiconducteurs ou autres suivant les methodes classiques. |
US4235848A (en) * | 1978-06-15 | 1980-11-25 | Apilat Vitaly Y | Apparatus for pulling single crystal from melt on a seed |
-
1988
- 1988-03-14 US US07/168,021 patent/US4956334A/en not_active Expired - Fee Related
- 1988-03-15 EP EP88104090A patent/EP0288709B1/de not_active Expired - Lifetime
- 1988-03-15 DE DE8888104090T patent/DE3872922T2/de not_active Expired - Fee Related
-
1990
- 1990-05-10 US US07/521,624 patent/US5057492A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4956334A (en) | 1990-09-11 |
US5057492A (en) | 1991-10-15 |
EP0288709A1 (de) | 1988-11-02 |
EP0288709B1 (de) | 1992-07-22 |
DE3872922T2 (de) | 1992-12-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |