DE3854541T2 - Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma. - Google Patents
Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma.Info
- Publication number
- DE3854541T2 DE3854541T2 DE3854541T DE3854541T DE3854541T2 DE 3854541 T2 DE3854541 T2 DE 3854541T2 DE 3854541 T DE3854541 T DE 3854541T DE 3854541 T DE3854541 T DE 3854541T DE 3854541 T2 DE3854541 T2 DE 3854541T2
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178997A JPS6423536A (en) | 1987-07-20 | 1987-07-20 | Sputter-etching device |
JP19820087A JPH0831443B2 (ja) | 1987-08-10 | 1987-08-10 | プラズマ処理装置 |
JP62279239A JPH0819529B2 (ja) | 1987-11-06 | 1987-11-06 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3854541D1 DE3854541D1 (de) | 1995-11-09 |
DE3854541T2 true DE3854541T2 (de) | 1996-03-14 |
Family
ID=27324662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3854541T Expired - Fee Related DE3854541T2 (de) | 1987-07-20 | 1988-07-20 | Verfahren und Vorrichtung zur Behandlung eines Materials durch Plasma. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5021114A (de) |
EP (1) | EP0300447B1 (de) |
KR (1) | KR920002864B1 (de) |
DE (1) | DE3854541T2 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2993675B2 (ja) * | 1989-02-08 | 1999-12-20 | 株式会社日立製作所 | プラズマ処理方法及びその装置 |
FR2646557B1 (fr) * | 1989-04-28 | 1997-07-18 | Canon Kk | Procede pour former un film de semiconducteur polycristallin sur un substrat isolant |
DE3924916A1 (de) * | 1989-07-27 | 1991-01-31 | Technics Plasma Gmbh | Verfahren und vorrichtung zur behandlung eines perforationen aufweisenden objektes mit hochfrequenzentladungsprodukten eines plasmas |
JP2602336B2 (ja) * | 1989-11-29 | 1997-04-23 | 株式会社日立製作所 | プラズマ処理装置 |
JPH088243B2 (ja) * | 1989-12-13 | 1996-01-29 | 三菱電機株式会社 | 表面クリーニング装置及びその方法 |
DE69123808T2 (de) * | 1990-09-26 | 1997-06-26 | Hitachi Ltd | Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma |
JP3020580B2 (ja) * | 1990-09-28 | 2000-03-15 | 株式会社日立製作所 | マイクロ波プラズマ処理装置 |
DE4037091C2 (de) * | 1990-11-22 | 1996-06-20 | Leybold Ag | Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes |
DE4310258A1 (de) * | 1993-03-30 | 1994-10-06 | Bosch Gmbh Robert | Vorrichtung zur Herstellung einer Plasmapolymerschutzschicht auf Werkstücken, insbesondere Scheinwerferreflektoren |
US5556475A (en) * | 1993-06-04 | 1996-09-17 | Applied Science And Technology, Inc. | Microwave plasma reactor |
US5518547A (en) * | 1993-12-23 | 1996-05-21 | International Business Machines Corporation | Method and apparatus for reducing particulates in a plasma tool through steady state flows |
JPH07245193A (ja) * | 1994-03-02 | 1995-09-19 | Nissin Electric Co Ltd | プラズマ発生装置及びプラズマ処理装置 |
EP0774772A1 (de) * | 1995-11-17 | 1997-05-21 | Applied Materials, Inc. | Verfahren zum physikalischen Ätzen von elektrisch leitenden Siliziumoberflächen |
JP3555797B2 (ja) * | 1996-03-11 | 2004-08-18 | 富士写真フイルム株式会社 | 成膜装置および成膜方法 |
US6341574B1 (en) | 1999-11-15 | 2002-01-29 | Lam Research Corporation | Plasma processing systems |
AU1606101A (en) * | 1999-11-15 | 2001-05-30 | Lam Research Corporation | Materials and gas chemistries for processing systems |
US6322661B1 (en) * | 1999-11-15 | 2001-11-27 | Lam Research Corporation | Method and apparatus for controlling the volume of a plasma |
US8114245B2 (en) * | 1999-11-26 | 2012-02-14 | Tadahiro Ohmi | Plasma etching device |
DE60133159T2 (de) * | 2000-01-12 | 2009-03-19 | Tokyo Electron Ltd. | Vakuumbehandlungsanlage |
JP2001203099A (ja) * | 2000-01-20 | 2001-07-27 | Yac Co Ltd | プラズマ生成装置およびプラズマ処理装置 |
DE10018143C5 (de) * | 2000-04-12 | 2012-09-06 | Oerlikon Trading Ag, Trübbach | DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems |
US6676760B2 (en) | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
NL1019781C2 (nl) * | 2002-01-18 | 2003-07-21 | Tno | Deklaag alsmede werkwijzen en inrichtingen voor de vervaardiging daarvan. |
FR2838020B1 (fr) * | 2002-03-28 | 2004-07-02 | Centre Nat Rech Scient | Dispositif de confinement de plasma |
KR20030085769A (ko) * | 2002-05-01 | 2003-11-07 | 주식회사 피에스티 | 화학기상 증착장치 및 증착방법 |
KR100623562B1 (ko) * | 2002-07-08 | 2006-09-13 | 간사이 티.엘.오 가부시키가이샤 | 실리콘 질화막의 형성 방법 및 형성 장치 |
CN100413021C (zh) * | 2005-12-02 | 2008-08-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应室温控系统在线故障检测装置及其方法 |
CN101460659B (zh) * | 2006-06-02 | 2011-12-07 | 应用材料股份有限公司 | 利用压差测量的气流控制 |
RU2326006C1 (ru) | 2006-12-21 | 2008-06-10 | Федеральное Государственное Унитарное Предприятие "Гознак" (Фгуп "Гознак") | Защитный элемент (варианты), способ его изготовления, защищенный от подделки материал и ценный документ |
US8268116B2 (en) | 2007-06-14 | 2012-09-18 | Lam Research Corporation | Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber |
DK2251453T3 (da) | 2009-05-13 | 2014-07-07 | Sio2 Medical Products Inc | Beholderholder |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
US9589772B2 (en) * | 2011-06-09 | 2017-03-07 | Korea Basic Science Institute | Plasma generation source including belt-type magnet and thin film deposition system using this |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
EP2846755A1 (de) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharidschutzschicht für eine arzneimittelverpackung |
JP6509734B2 (ja) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 皮膜検査方法 |
EP2920567B1 (de) | 2012-11-16 | 2020-08-19 | SiO2 Medical Products, Inc. | Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften |
WO2014085346A1 (en) | 2012-11-30 | 2014-06-05 | Sio2 Medical Products, Inc. | Hollow body with inside coating |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
US20160015898A1 (en) | 2013-03-01 | 2016-01-21 | Sio2 Medical Products, Inc. | Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
CN110074968B (zh) | 2013-03-11 | 2021-12-21 | Sio2医药产品公司 | 涂布包装材料 |
EP2971227B1 (de) | 2013-03-15 | 2017-11-15 | Si02 Medical Products, Inc. | Beschichtungsverfahren. |
EP3693493A1 (de) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatische beschichtungen für kunststoffbehälter |
JP2018523538A (ja) | 2015-08-18 | 2018-08-23 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 低酸素透過速度を有する薬剤包装及び他の包装 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2402301A1 (fr) * | 1977-09-02 | 1979-03-30 | Commissariat Energie Atomique | Appareil de micro-usinage par erosion ionique utilisant une source de plasma |
JPS5726441A (en) * | 1980-07-23 | 1982-02-12 | Hitachi Ltd | Cvd method and device therefor |
US4521286A (en) * | 1983-03-09 | 1985-06-04 | Unisearch Limited | Hollow cathode sputter etcher |
JPS6130036A (ja) * | 1984-07-23 | 1986-02-12 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
DE3500328A1 (de) * | 1985-01-07 | 1986-07-10 | Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa | Zerstaeubungsaetzvorrichtung |
US4588490A (en) * | 1985-05-22 | 1986-05-13 | International Business Machines Corporation | Hollow cathode enhanced magnetron sputter device |
FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
EP0264913B1 (de) * | 1986-10-20 | 1994-06-22 | Hitachi, Ltd. | Plasmabearbeitungsgerät |
JPS63210275A (ja) * | 1987-02-24 | 1988-08-31 | Semiconductor Energy Lab Co Ltd | プラズマ反応装置内を清浄にする方法 |
JPH0672306B2 (ja) * | 1987-04-27 | 1994-09-14 | 株式会社半導体エネルギー研究所 | プラズマ処理装置およびプラズマ処理方法 |
US4819118A (en) * | 1988-06-02 | 1989-04-04 | Westinghouse Electric Corp. | Electromagnetic contactor tandem control system for thermal protection of a bidirectional motor drive |
-
1988
- 1988-07-18 KR KR1019880008942A patent/KR920002864B1/ko not_active IP Right Cessation
- 1988-07-19 US US07/221,272 patent/US5021114A/en not_active Expired - Lifetime
- 1988-07-20 DE DE3854541T patent/DE3854541T2/de not_active Expired - Fee Related
- 1988-07-20 EP EP88111684A patent/EP0300447B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5021114A (en) | 1991-06-04 |
DE3854541D1 (de) | 1995-11-09 |
EP0300447A3 (en) | 1990-08-29 |
EP0300447A2 (de) | 1989-01-25 |
KR890003266A (ko) | 1989-04-13 |
KR920002864B1 (ko) | 1992-04-06 |
EP0300447B1 (de) | 1995-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |