DE3786885D1 - Schaltung fuer das schalten mit bipolaren transistoren. - Google Patents

Schaltung fuer das schalten mit bipolaren transistoren.

Info

Publication number
DE3786885D1
DE3786885D1 DE8787402550T DE3786885T DE3786885D1 DE 3786885 D1 DE3786885 D1 DE 3786885D1 DE 8787402550 T DE8787402550 T DE 8787402550T DE 3786885 T DE3786885 T DE 3786885T DE 3786885 D1 DE3786885 D1 DE 3786885D1
Authority
DE
Germany
Prior art keywords
switching
bipolar transistors
bipolar
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787402550T
Other languages
English (en)
Other versions
DE3786885T2 (de
Inventor
James R Kuo
Brian R Carey
Timothy G Moran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE3786885D1 publication Critical patent/DE3786885D1/de
Application granted granted Critical
Publication of DE3786885T2 publication Critical patent/DE3786885T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00307Modifications for increasing the reliability for protection in bipolar transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/013Modifications for accelerating switching in bipolar transistor circuits
    • H03K19/0133Modifications for accelerating switching in bipolar transistor circuits by bootstrapping, i.e. by positive feed-back
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01825Coupling arrangements, impedance matching circuits
    • H03K19/01831Coupling arrangements, impedance matching circuits with at least one differential stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/0823Multistate logic
    • H03K19/0826Multistate logic one of the states being the high impedance or floating state
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/02Shaping pulses by amplifying
DE87402550T 1986-11-13 1987-11-12 Schaltung für das Schalten mit bipolaren Transistoren. Expired - Fee Related DE3786885T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/930,608 US4791313A (en) 1986-11-13 1986-11-13 Bipolar transistor switching enhancement circuit

Publications (2)

Publication Number Publication Date
DE3786885D1 true DE3786885D1 (de) 1993-09-09
DE3786885T2 DE3786885T2 (de) 1994-02-24

Family

ID=25459516

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87402550T Expired - Fee Related DE3786885T2 (de) 1986-11-13 1987-11-12 Schaltung für das Schalten mit bipolaren Transistoren.

Country Status (5)

Country Link
US (1) US4791313A (de)
EP (2) EP0268531B1 (de)
JP (1) JPS63190423A (de)
CA (1) CA1271235A (de)
DE (1) DE3786885T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153466A (en) * 1991-03-26 1992-10-06 Medtronic, Inc. All monolithic transceiver operative from a low voltage vcc dc supply
FR2678070A1 (fr) * 1991-06-18 1992-12-24 Valeo Equip Electr Moteur Circuit de detection de la tension entre phases d'un alternateur pour la mise en service d'un regulateur associe a un tel alternateur.
US5332929A (en) * 1993-04-08 1994-07-26 Xilinx, Inc. Power management for programmable logic devices
US5684427A (en) * 1996-01-19 1997-11-04 Allegro Microsystems, Inc. Bipolar driver circuit including primary and pre-driver transistors
US5959481A (en) * 1997-02-18 1999-09-28 Rambus Inc. Bus driver circuit including a slew rate indicator circuit having a one shot circuit
DE19914466C1 (de) * 1999-03-30 2000-09-14 Siemens Ag Treiberstufe zum Schalten einer Last
JP3914463B2 (ja) * 2002-05-29 2007-05-16 株式会社日立製作所 コンパレータ
RU2628660C2 (ru) 2013-06-13 2017-08-21 Хэллибертон Энерджи Сервисиз, Инк. Измерения дальности с использованием модулированных сигналов

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3218466A (en) * 1961-05-12 1965-11-16 Ibm High speed switching circuits
US4092551A (en) * 1976-05-20 1978-05-30 International Business Machines Corporation A.C. powered speed up circuit
US4191899A (en) * 1977-06-29 1980-03-04 International Business Machines Corporation Voltage variable integrated circuit capacitor and bootstrap driver circuit
US4176289A (en) * 1978-06-23 1979-11-27 Electronic Memories & Magnetics Corporation Driving circuit for integrated circuit semiconductor memory
US4251742A (en) * 1979-04-09 1981-02-17 Rca Corporation Current source, as for switching PIN diodes
US4449063A (en) * 1979-08-29 1984-05-15 Fujitsu Limited Logic circuit with improved switching
JPS5855582B2 (ja) * 1981-11-13 1983-12-10 株式会社東芝 透視性テ−プカセツト
DE3280350D1 (de) * 1982-08-25 1991-09-26 Ibm Deutschland Transistor-leistungsverstaerker mit verringerten schaltzeiten.
JPS5890828A (ja) * 1982-11-01 1983-05-30 Nec Corp トランジスタ回路
JPS5995728A (ja) * 1982-11-24 1984-06-01 Sanyo Electric Co Ltd Most出力回路
US4484147A (en) * 1983-03-31 1984-11-20 Tektronix, Inc. Bootstrapped shunt feedback amplifier
US4609832A (en) * 1983-10-14 1986-09-02 Sundstrand Corporation Incremental base drive circuit for a power transistor
US4644186A (en) * 1984-08-20 1987-02-17 National Semiconductor Corporation Fast switching circuit for lateral PNP transistors
US4791314A (en) * 1986-11-13 1988-12-13 Fairchild Semiconductor Corporation Oscillation-free, short-circuit protection circuit
US4760282A (en) * 1986-11-13 1988-07-26 National Semiconductor Corporation High-speed, bootstrap driver circuit

Also Published As

Publication number Publication date
EP0268531A2 (de) 1988-05-25
CA1271235A (en) 1990-07-03
EP0268531A3 (en) 1990-05-02
EP0268531B1 (de) 1993-08-04
DE3786885T2 (de) 1994-02-24
JPS63190423A (ja) 1988-08-08
US4791313A (en) 1988-12-13
EP0541512A2 (de) 1993-05-12
EP0541512A3 (en) 1993-09-01

Similar Documents

Publication Publication Date Title
DE3583119D1 (de) Bipolartransistor mit heterouebergang.
FI892368A (fi) Filterenhet foer anvaendning i hoega temperaturer.
DE3884292D1 (de) Bipolarer Transistor mit Heteroübergang.
DE3763353D1 (de) Mosfet-schalter mit induktiver last.
DE3774781D1 (de) Kautschukmischung.
DE3751972D1 (de) Bipolarer Transistor
DE3786363D1 (de) Halbleiteranordnungen mit hoher beweglichkeit.
DE3888085D1 (de) Bipolartransistor mit Heteroübergang.
DE3788453D1 (de) Komplementäres vertikales bipolares Transistorpaar mit flachem Übergang.
DE3785196T2 (de) Bipolartransistor mit heterouebergang.
DE3860836D1 (de) Bipolarer transistor mit heterouebergang.
DE3774705D1 (de) Kleinschalter mit schnappschaltung.
DE3788500T2 (de) Bipolarer Halbleitertransistor.
DE3780284D1 (de) Bipolarer heterouebergangs-transistor mit ballistischem betrieb.
DE3786885D1 (de) Schaltung fuer das schalten mit bipolaren transistoren.
DE3851175T2 (de) Bipolartransistor mit Heteroübergängen.
DE3882565T2 (de) Bipolartransistor.
DE3687049D1 (de) Bipolare eigenschaften aufweisender transistor mit heterouebergang.
DE3851991D1 (de) Bipolartransistoren.
DE3888602D1 (de) Bipolartransistor mit Heteroübergängen.
DE68909977D1 (de) Bipolartransistor.
DE3781202T2 (de) Transistoren mit heissen ladungstraegern.
DE3775941D1 (de) Kautschukmischung.
DE3874949T2 (de) Heterouebergang-bipolartransistor.
DE3774932D1 (de) Transistoren mit heissen ladungstraegern.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee