DE3687488D1 - Redundante leiterstrukturen fuer duennfilm-fet-angesteuerte fluessigkristallanzeigevorrichtungen. - Google Patents

Redundante leiterstrukturen fuer duennfilm-fet-angesteuerte fluessigkristallanzeigevorrichtungen.

Info

Publication number
DE3687488D1
DE3687488D1 DE8686109677T DE3687488T DE3687488D1 DE 3687488 D1 DE3687488 D1 DE 3687488D1 DE 8686109677 T DE8686109677 T DE 8686109677T DE 3687488 T DE3687488 T DE 3687488T DE 3687488 D1 DE3687488 D1 DE 3687488D1
Authority
DE
Germany
Prior art keywords
redundant
liquid crystal
thin film
crystal display
display devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686109677T
Other languages
English (en)
Other versions
DE3687488T2 (de
Inventor
Donald Earl Castleberry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3687488D1 publication Critical patent/DE3687488D1/de
Publication of DE3687488T2 publication Critical patent/DE3687488T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
DE8686109677T 1985-07-19 1986-07-15 Redundante leiterstrukturen fuer duennfilm-fet-angesteuerte fluessigkristallanzeigevorrichtungen. Expired - Lifetime DE3687488T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75664085A 1985-07-19 1985-07-19

Publications (2)

Publication Number Publication Date
DE3687488D1 true DE3687488D1 (de) 1993-02-25
DE3687488T2 DE3687488T2 (de) 1993-08-12

Family

ID=25044403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686109677T Expired - Lifetime DE3687488T2 (de) 1985-07-19 1986-07-15 Redundante leiterstrukturen fuer duennfilm-fet-angesteuerte fluessigkristallanzeigevorrichtungen.

Country Status (5)

Country Link
US (2) US4804953A (de)
EP (1) EP0209113B1 (de)
JP (1) JPS6265017A (de)
DE (1) DE3687488T2 (de)
FR (1) FR2585167B1 (de)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2169746B (en) * 1984-11-13 1988-09-14 Sharp Kk Thin film transistor
GB2185622B (en) * 1985-11-27 1989-10-11 Sharp Kk Thin film transistor array
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
US5270845A (en) * 1987-02-19 1993-12-14 Mitsubishi Denki K.K. Liquid crystal display unit manufacturing method including forming one of two gate line layers of display electrode material
JPH0627985B2 (ja) * 1987-05-06 1994-04-13 日本電気株式会社 薄膜トランジスタアレイ
JPH0690372B2 (ja) * 1987-08-26 1994-11-14 シャープ株式会社 液晶表示素子
JPH01102434A (ja) * 1987-10-15 1989-04-20 Sharp Corp マトリックス型液晶表示パネル
US5075674A (en) * 1987-11-19 1991-12-24 Sharp Kabushiki Kaisha Active matrix substrate for liquid crystal display
JPH01191829A (ja) * 1988-01-27 1989-08-01 Mitsubishi Electric Corp 液晶表示装置
JPH0814668B2 (ja) * 1988-02-16 1996-02-14 シャープ株式会社 マトリックス型液晶表示パネル
JPH01217421A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法
EP0333151B1 (de) * 1988-03-18 1993-10-20 Seiko Epson Corporation Dünnfilmtransistor
US5493129A (en) * 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current
JPH02157828A (ja) * 1988-12-12 1990-06-18 Hosiden Electron Co Ltd 液晶表示素子
US4968119A (en) * 1989-01-10 1990-11-06 David Sarnoff Research Center, Inc. High-density liquid-crystal active dot-matrix display structure
GB2227349A (en) * 1989-01-18 1990-07-25 Philips Electronic Associated Display devices
US5153754A (en) * 1989-06-30 1992-10-06 General Electric Company Multi-layer address lines for amorphous silicon liquid crystal display devices
US5212574A (en) * 1989-07-05 1993-05-18 Sharp Kabushiki Kaisha Active matrix board having double-layer scan lines and capacity lines with discontinuous lower scan lines and lower capacity lines
ATE154161T1 (de) * 1989-08-11 1997-06-15 Raf Electronics Corp Auf halbleiter basierte matritze
US5108172A (en) * 1989-08-11 1992-04-28 Raf Electronics Corp. Active matrix reflective image plane module and projection system
US5498573A (en) * 1989-11-29 1996-03-12 General Electric Company Method of making multi-layer address lines for amorphous silicon liquid crystal display devices
US5063378A (en) * 1989-12-22 1991-11-05 David Sarnoff Research Center, Inc. Scanned liquid crystal display with select scanner redundancy
DE69133246T2 (de) * 1990-05-11 2004-04-01 Sharp K.K. Anzeigevorrichtung mit aktiver Matrix , Verfahren zu ihrer Herstellung und Verfahren zur Behandlung defekter Pixel
US5162931A (en) * 1990-11-06 1992-11-10 Honeywell, Inc. Method of manufacturing flat panel backplanes including redundant gate lines and displays made thereby
US5303074A (en) * 1991-04-29 1994-04-12 General Electric Company Embedded repair lines for thin film electronic display or imager devices
US5302987A (en) * 1991-05-15 1994-04-12 Sharp Kabushiki Kaisha Active matrix substrate including connecting electrode with extended portion
JPH055898A (ja) * 1991-06-27 1993-01-14 Casio Comput Co Ltd 薄膜素子形成パネル
GB2265486A (en) * 1992-03-11 1993-09-29 Marconi Gec Ltd Display device fabrication
JP2760462B2 (ja) * 1992-05-13 1998-05-28 シャープ株式会社 アクティブマトリクス基板
JP2915732B2 (ja) * 1993-02-01 1999-07-05 シャープ株式会社 アクティブマトリクス基板
JPH06250211A (ja) * 1993-02-23 1994-09-09 Hitachi Ltd 液晶表示基板とその製造方法
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
DE69421522T2 (de) * 1993-12-20 2000-08-10 Gen Electric Verfahren zur reparatur einer leitung eines dünnfilm-bildsensors oder einer dünnfilm-anzeige und die dadurch hergestellte struktur
US5555001A (en) * 1994-03-08 1996-09-10 Prime View Hk Limited Redundant scheme for LCD display with integrated data driving circuit
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
US5622163A (en) 1994-11-29 1997-04-22 Iep Group, Inc. Counter for fluid dispensers
US5559345A (en) * 1994-12-20 1996-09-24 Goldstar Co., Ltd. Thin film transistor having redundant metal patterns
US5814529A (en) * 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
US5631473A (en) * 1995-06-21 1997-05-20 General Electric Company Solid state array with supplemental dielectric layer crossover structure
US5552607A (en) * 1995-06-21 1996-09-03 General Electric Company Imager device with integral address line repair segments
US6133977A (en) * 1997-10-21 2000-10-17 Samsung Electronics Co., Ltd. Liquid crystal displays having common electrode overlap with one or more data lines
US6215541B1 (en) 1997-11-20 2001-04-10 Samsung Electronics Co., Ltd. Liquid crystal displays and manufacturing methods thereof
JP4674926B2 (ja) * 1999-02-12 2011-04-20 エーユー オプトロニクス コーポレイション 液晶ディスプレイパネル及びその製造方法
JP2000321599A (ja) * 1999-05-10 2000-11-24 Hitachi Ltd 液晶表示装置
KR100776514B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US7411215B2 (en) 2002-04-15 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP2005524110A (ja) * 2002-04-24 2005-08-11 イー−インク コーポレイション 電子表示装置
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100862240B1 (ko) 2002-07-31 2008-10-09 엘지디스플레이 주식회사 반사형 액정표시장치와 그 제조방법
KR100460979B1 (ko) * 2002-12-31 2004-12-09 엘지.필립스 엘시디 주식회사 반사형 액정표시장치용 어레이기판과 그 제조방법
TWI226962B (en) * 2004-01-05 2005-01-21 Au Optronics Corp Liquid crystal display device with a capacitance-compensated structure
JP4275644B2 (ja) * 2004-06-23 2009-06-10 シャープ株式会社 アクティブマトリクス基板およびその製造方法、並びに電子装置
KR101138429B1 (ko) * 2005-07-22 2012-04-26 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조방법
KR101232160B1 (ko) * 2006-06-16 2013-02-12 엘지디스플레이 주식회사 표시장치와 그 제조방법
CN100592181C (zh) * 2007-05-30 2010-02-24 北京京东方光电科技有限公司 一种可修复的像素结构
TWI501215B (zh) * 2009-02-27 2015-09-21 Au Optronics Corp 減輕液晶顯示器拖曳殘影現象之方法及液晶顯示器
WO2010141739A2 (en) 2009-06-03 2010-12-09 Manufacturing Resources International Inc. Dynamic dimming led backlight
CN102819158B (zh) * 2012-08-10 2015-08-12 北京京东方光电科技有限公司 一种显示面板
US9348174B2 (en) 2013-03-14 2016-05-24 Manufacturing Resources International, Inc. Rigid LCD assembly
US9690137B2 (en) 2013-07-03 2017-06-27 Manufacturing Resources International, Inc. Airguide backlight assembly
US10191212B2 (en) 2013-12-02 2019-01-29 Manufacturing Resources International, Inc. Expandable light guide for backlight
US10527276B2 (en) 2014-04-17 2020-01-07 Manufacturing Resources International, Inc. Rod as a lens element for light emitting diodes
US10649273B2 (en) 2014-10-08 2020-05-12 Manufacturing Resources International, Inc. LED assembly for transparent liquid crystal display and static graphic
CN104505392A (zh) * 2014-12-29 2015-04-08 合肥鑫晟光电科技有限公司 阵列基板及其制作方法、阵列基板的修复方法、显示装置
US10261362B2 (en) 2015-09-01 2019-04-16 Manufacturing Resources International, Inc. Optical sheet tensioner
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368523A (en) * 1979-12-20 1983-01-11 Tokyo Shibaura Denki Kabushiki Kaisha Liquid crystal display device having redundant pairs of address buses
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
EP0048610B1 (de) * 1980-09-22 1986-01-15 Kabushiki Kaisha Toshiba Halbleiterbauelement und Verfahren zu seiner Herstellung
JPS57161882A (en) * 1981-03-31 1982-10-05 Hitachi Ltd Display body panel
JPS58140781A (ja) * 1982-02-17 1983-08-20 株式会社日立製作所 画像表示装置
JPS5997178A (ja) * 1982-11-25 1984-06-04 三菱電機株式会社 マトリクス型表示装置
FR2554622B1 (fr) * 1983-11-03 1988-01-15 Commissariat Energie Atomique Procede de fabrication d'une matrice de composants electroniques
GB8402654D0 (en) * 1984-02-01 1984-03-07 Secr Defence Flatpanel display
US4597001A (en) * 1984-10-05 1986-06-24 General Electric Company Thin film field-effect transistors with tolerance to electrode misalignment

Also Published As

Publication number Publication date
DE3687488T2 (de) 1993-08-12
FR2585167B1 (fr) 1993-05-07
USRE33829E (en) 1992-02-25
JPS6265017A (ja) 1987-03-24
EP0209113A3 (en) 1989-06-28
EP0209113B1 (de) 1993-01-13
US4804953A (en) 1989-02-14
EP0209113A2 (de) 1987-01-21
FR2585167A1 (fr) 1987-01-23

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Representative=s name: ROEGER UND KOLLEGEN, 73728 ESSLINGEN