DE3671574D1 - Doppelschicht-photowiderstandstechnik fuer kontrollierte seitenwandkontur mittels plasmaaetzverfahren. - Google Patents

Doppelschicht-photowiderstandstechnik fuer kontrollierte seitenwandkontur mittels plasmaaetzverfahren.

Info

Publication number
DE3671574D1
DE3671574D1 DE8686902253T DE3671574T DE3671574D1 DE 3671574 D1 DE3671574 D1 DE 3671574D1 DE 8686902253 T DE8686902253 T DE 8686902253T DE 3671574 T DE3671574 T DE 3671574T DE 3671574 D1 DE3671574 D1 DE 3671574D1
Authority
DE
Germany
Prior art keywords
double
side wall
photo resistance
plasma method
controlled side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686902253T
Other languages
English (en)
Inventor
Y Liao
Kuang-Yeh Chang
Hsing-Chien Ma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3671574D1 publication Critical patent/DE3671574D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
DE8686902253T 1985-04-29 1986-03-31 Doppelschicht-photowiderstandstechnik fuer kontrollierte seitenwandkontur mittels plasmaaetzverfahren. Expired - Fee Related DE3671574D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/728,012 US4645562A (en) 1985-04-29 1985-04-29 Double layer photoresist technique for side-wall profile control in plasma etching processes
PCT/US1986/000649 WO1986006547A1 (en) 1985-04-29 1986-03-31 Double layer photoresist technique for side-wall profile control in plasma etching processes

Publications (1)

Publication Number Publication Date
DE3671574D1 true DE3671574D1 (de) 1990-06-28

Family

ID=24925070

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686902253T Expired - Fee Related DE3671574D1 (de) 1985-04-29 1986-03-31 Doppelschicht-photowiderstandstechnik fuer kontrollierte seitenwandkontur mittels plasmaaetzverfahren.

Country Status (7)

Country Link
US (1) US4645562A (de)
EP (1) EP0221093B1 (de)
JP (1) JPS63500411A (de)
KR (1) KR900002688B1 (de)
DE (1) DE3671574D1 (de)
HK (1) HK81190A (de)
WO (1) WO1986006547A1 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218028A (ja) * 1985-07-16 1987-01-27 Toshiba Corp デイスカム装置
US6087267A (en) * 1986-03-04 2000-07-11 Motorola, Inc. Process for forming an integrated circuit
JPS6318697A (ja) * 1986-07-11 1988-01-26 日本電気株式会社 多層配線基板
JPS63258021A (ja) * 1987-04-16 1988-10-25 Toshiba Corp 接続孔の形成方法
US5486449A (en) * 1989-02-07 1996-01-23 Rohm Co., Ltd. Photomask, photoresist and photolithography for a monolithic IC
US5034091A (en) * 1990-04-27 1991-07-23 Hughes Aircraft Company Method of forming an electrical via structure
DE4115414C2 (de) * 1991-05-10 1995-07-06 Meinhard Prof Dr Knoll Verfahren zur Herstellung von miniaturisierten Chemo- und Biosensorelementen mit ionenselektiver Membran sowie von Trägern für diese Elemente
JP3360461B2 (ja) * 1995-01-31 2002-12-24 ソニー株式会社 メタル成膜工程の前処理方法
KR0172237B1 (ko) * 1995-06-26 1999-03-30 김주용 반도체 소자의 미세패턴 형성방법
US5728627A (en) * 1996-11-14 1998-03-17 Samsung Electronics Co., Ltd. Methods of forming planarized conductive interconnects for integrated circuits
US5976987A (en) * 1997-10-03 1999-11-02 Vlsi Technology, Inc. In-situ corner rounding during oxide etch for improved plug fill
US6218310B1 (en) * 1998-05-12 2001-04-17 Advanced Micro Devices, Inc. RTA methods for treating a deep-UV resist mask prior to gate formation etch to improve gate profile
US6664194B1 (en) * 1999-03-18 2003-12-16 Taiwan Semiconductor Manufacturing Company Photoexposure method for facilitating photoresist stripping
US6320269B1 (en) * 1999-05-03 2001-11-20 Taiwan Semiconductor Manufacturing Company Method for preparing a semiconductor wafer to receive a protective tape
KR100356987B1 (ko) * 2000-01-22 2002-10-18 엘지.필립스 엘시디 주식회사 열경화성 수지 제거용 조성물
US7078348B1 (en) * 2001-06-27 2006-07-18 Advanced Micro Devices, Inc. Dual layer patterning scheme to make dual damascene
US7384727B2 (en) * 2003-06-26 2008-06-10 Micron Technology, Inc. Semiconductor processing patterning methods
US6969677B2 (en) 2003-10-20 2005-11-29 Micron Technology, Inc. Methods of forming conductive metal silicides by reaction of metal with silicon
US7026243B2 (en) 2003-10-20 2006-04-11 Micron Technology, Inc. Methods of forming conductive material silicides by reaction of metal with silicon
US7361605B2 (en) * 2004-01-20 2008-04-22 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US7153769B2 (en) 2004-04-08 2006-12-26 Micron Technology, Inc. Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon
US7229745B2 (en) * 2004-06-14 2007-06-12 Bae Systems Information And Electronic Systems Integration Inc. Lithographic semiconductor manufacturing using a multi-layered process
US7241705B2 (en) * 2004-09-01 2007-07-10 Micron Technology, Inc. Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
KR100640525B1 (ko) * 2004-12-29 2006-10-31 동부일렉트로닉스 주식회사 반도체 소자의 금속 라인 형성 방법
KR100710187B1 (ko) * 2005-11-24 2007-04-20 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US20080160749A1 (en) * 2006-12-27 2008-07-03 Texas Instruments Incorporated Semiconductor device and method of forming thereof
US20090008430A1 (en) * 2007-07-06 2009-01-08 Lucent Technologies Inc. Solder-bonding process
CN101785088B (zh) * 2007-08-08 2013-06-05 株式会社爱发科 等离子处理方法和等离子处理装置
US7755123B2 (en) * 2007-08-24 2010-07-13 Aptina Imaging Corporation Apparatus, system, and method providing backside illuminated imaging device
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
US7915643B2 (en) 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US9257279B2 (en) * 2012-03-29 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Mask treatment for double patterning design
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
CN103066095B (zh) * 2013-01-14 2016-01-20 武汉新芯集成电路制造有限公司 一种影像传感器及其制造方法
WO2014127150A1 (en) 2013-02-15 2014-08-21 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
WO2015009514A1 (en) 2013-07-19 2015-01-22 Transphorm Inc. Iii-nitride transistor including a p-type depleting layer
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
US11764062B2 (en) * 2017-11-13 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US10157773B1 (en) * 2017-11-28 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure having layer with re-entrant profile and method of forming the same
US10927450B2 (en) * 2018-12-19 2021-02-23 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US11856877B2 (en) 2019-12-23 2023-12-26 The University Of Canterbury Electrical contacts for nanoparticle networks
CN113766412B (zh) * 2021-11-05 2022-02-15 绍兴中芯集成电路制造股份有限公司 具有弧形底角的凹槽的制备方法、mems麦克风的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS547871A (en) * 1977-06-21 1979-01-20 Toshiba Corp Pattern forming method
JPS5569264A (en) * 1978-11-15 1980-05-24 Toshiba Corp Etching method
JPS56114319A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Method for forming contact hole
JPS56130925A (en) * 1980-03-17 1981-10-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5783034A (en) * 1980-11-12 1982-05-24 Toshiba Corp Method for taper etching
DE3215411A1 (de) * 1982-04-24 1983-10-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von oeffnungen mit hilfe einer maske in einer auf einer unterlage befindlichen schicht
US4461672A (en) * 1982-11-18 1984-07-24 Texas Instruments, Inc. Process for etching tapered vias in silicon dioxide
JPS59152628A (ja) * 1983-02-21 1984-08-31 Toshiba Corp 半導体装置の製造方法
US4484978A (en) * 1983-09-23 1984-11-27 Fairchild Camera & Instrument Corp. Etching method
US4523976A (en) * 1984-07-02 1985-06-18 Motorola, Inc. Method for forming semiconductor devices

Also Published As

Publication number Publication date
EP0221093A1 (de) 1987-05-13
HK81190A (en) 1990-10-19
US4645562A (en) 1987-02-24
JPS63500411A (ja) 1988-02-12
KR900002688B1 (ko) 1990-04-23
WO1986006547A1 (en) 1986-11-06
KR880700455A (ko) 1988-03-15
EP0221093B1 (de) 1990-05-23

Similar Documents

Publication Publication Date Title
DE3671574D1 (de) Doppelschicht-photowiderstandstechnik fuer kontrollierte seitenwandkontur mittels plasmaaetzverfahren.
NL191241C (nl) Kleefvel voor halfgeleiders.
NO865141D0 (no) Fremgangsmaate for desinfisering av en overflate.
DE3683819D1 (de) Treppensteigender rollstuhl mit abfuehlhilfsmitteln fuer die stufen.
DE3483184D1 (de) Bearbeitungsvorrichtung mittels plasma.
DE3676317D1 (de) Abweichungsermittlung fuer drehgeschwindigkeitssensor.
NO853824L (no) Anordning ved katamaran.
NO864935D0 (no) Elektrode for fast-polymer-elektrolytt.
FR2512971B1 (fr) Tireuse par contact
DE3669593D1 (de) Leistungssensor.
NL960015I2 (nl) Purineverbindingen met immunomodulerende activiteit.
KR880700343A (ko) 복합곡면 생성방법
IT8520985A0 (it) Dispositivo di governo per aeromobili.
DE3686914T2 (de) Elektrolyt fuer elektrolytkondensator.
DE3676753D1 (de) Stranggiessverfahren.
KR880700344A (ko) 복합곡면 생성방법
DE3673601D1 (de) System zum beschichten einer oberflaeche.
IT1152158B (it) Dispositivo per il cambio dei cilindri conici di un laminatoio obliquo
DE3686869T2 (de) Elektrolyt fuer elektrolytischen kondensator.
DE3689338T2 (de) Isocarbacyclinderivate.
DE3581928D1 (de) Positionsgebersystem.
DE3679285D1 (de) Messsystem mit elektrode.
DE3686878T2 (de) Dram-arrays hoher leistung mit graben-kondensatoren.
ATE43343T1 (de) Phosphor-enthaltende heterocyclen.
IT8567467A0 (it) Gruppo motopropulsore per un veicolo

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee