DE3663312D1 - Positive resist system having high resistance to oxygen reactive ion etching - Google Patents

Positive resist system having high resistance to oxygen reactive ion etching

Info

Publication number
DE3663312D1
DE3663312D1 DE8686114539T DE3663312T DE3663312D1 DE 3663312 D1 DE3663312 D1 DE 3663312D1 DE 8686114539 T DE8686114539 T DE 8686114539T DE 3663312 T DE3663312 T DE 3663312T DE 3663312 D1 DE3663312 D1 DE 3663312D1
Authority
DE
Germany
Prior art keywords
high resistance
reactive ion
ion etching
positive resist
oxygen reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8686114539T
Other languages
English (en)
Inventor
Krishna G Sachdev
Ranee W Kwong
Mahmoud M Khojasteh
Harbans S Sachdev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3663312D1 publication Critical patent/DE3663312D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing
DE8686114539T 1985-12-09 1986-10-21 Positive resist system having high resistance to oxygen reactive ion etching Expired DE3663312D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/806,597 US4665006A (en) 1985-12-09 1985-12-09 Positive resist system having high resistance to oxygen reactive ion etching

Publications (1)

Publication Number Publication Date
DE3663312D1 true DE3663312D1 (en) 1989-06-15

Family

ID=25194405

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686114539T Expired DE3663312D1 (en) 1985-12-09 1986-10-21 Positive resist system having high resistance to oxygen reactive ion etching

Country Status (4)

Country Link
US (1) US4665006A (de)
EP (1) EP0225454B1 (de)
JP (1) JPS62136638A (de)
DE (1) DE3663312D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0249139B2 (de) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Lackzusammensetzung und -anwendung
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
US4968582A (en) * 1988-06-28 1990-11-06 Mcnc And University Of Nc At Charlotte Photoresists resistant to oxygen plasmas
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
JPH02115853A (ja) * 1988-10-26 1990-04-27 Fujitsu Ltd 半導体装置の製造方法
DE69029104T2 (de) 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxane und positiv arbeitende Resistmasse
US5166038A (en) * 1989-07-27 1992-11-24 International Business Machines Corporation Etch resistant pattern formation via interfacial silylation process
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
US5328807A (en) * 1990-06-11 1994-07-12 Hitichi, Ltd. Method of forming a pattern
DE69131658T2 (de) * 1990-06-25 2000-04-27 Matsushita Electronics Corp Licht- oder strahlungsempfindliche Zusammensetzung
US5457003A (en) * 1990-07-06 1995-10-10 Nippon Telegraph And Telephone Corporation Negative working resist material, method for the production of the same and process of forming resist patterns using the same
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
DE4228790C1 (de) 1992-08-29 1993-11-25 Du Pont Deutschland Tonbares strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Mehrfarbenbildern mittels solch eines Gemischs
US5683540A (en) * 1995-06-26 1997-11-04 Boeing North American, Inc. Method and system for enhancing the surface of a material for cleaning, material removal or as preparation for adhesive bonding or etching
US5972235A (en) * 1997-02-28 1999-10-26 Candescent Technologies Corporation Plasma etching using polycarbonate mask and low pressure-high density plasma
KR100707767B1 (ko) 1999-09-28 2007-04-17 후지필름 가부시키가이샤 포지티브 포토레지스트 조성물
CN1273869C (zh) 2000-08-29 2006-09-06 捷时雅株式会社 有放射线敏感性的折射率变化性组合物，及其光学制品
WO2002048264A1 (fr) 2000-12-11 2002-06-20 Jsr Corporation Composition sensible aux rayonnements, a indice de refraction variable et procede pour modifier son indice de refraction
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
CN1462298A (zh) 2001-03-13 2003-12-17 捷时雅株式会社 感放射线性折射率变化性组合物及其应用
JP2003043682A (ja) 2001-08-01 2003-02-13 Jsr Corp 感放射線性誘電率変化性組成物、誘電率変化法
US20070122749A1 (en) * 2005-11-30 2007-05-31 Fu Peng F Method of nanopatterning, a resist film for use therein, and an article including the resist film
DE102013003329A1 (de) 2013-02-25 2014-08-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Silane, Hybridpolymere und Photolack mit Positiv-Resist Verhalten sowie Verfahren zur Herstellung
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
WO2023210579A1 (ja) * 2022-04-26 2023-11-02 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189662A (en) * 1961-01-23 1965-06-15 Gen Electric Organopolysiloxane-polycarbonate block copolymers
US3419634A (en) * 1966-01-03 1968-12-31 Gen Electric Organopolysiloxane polycarbonate block copolymers
US3600288A (en) * 1969-01-03 1971-08-17 Gen Electric Curable silicone-polycarbonate copolymer composition
US3679774A (en) * 1970-03-02 1972-07-25 Gen Electric Crystallized organopolysiloxane-polycarbonate block polymers and method for making them
BE792727A (fr) * 1971-12-16 1973-06-14 Bayer Ag Procede pour l'appretage antifriction du fil a
US3821325A (en) * 1973-03-23 1974-06-28 Gen Electric Organopolysiloxane-polycarbonate block copolymers
US3832419A (en) * 1973-03-23 1974-08-27 Gen Electric Organopolysiloxane-polycarbonate block copolymers
US3861915A (en) * 1973-03-30 1975-01-21 Eastman Kodak Co Block copolyesters of polysiloxanes as additives to photoconductive layers
US3935154A (en) * 1973-03-30 1976-01-27 Eastman Kodak Company Block copolyesters of polysiloxanes
US3961099A (en) * 1974-09-26 1976-06-01 International Business Machines Corporation Thermally stable positive polycarbonate electron beam resists
US4256828A (en) * 1975-09-02 1981-03-17 Minnesota Mining And Manufacturing Company Photocopolymerizable compositions based on epoxy and hydroxyl-containing organic materials
US4423136A (en) * 1977-08-05 1983-12-27 General Electric Company Free radical curable resin compositions containing triarylsulfonium salt
JPS55500687A (de) * 1978-06-22 1980-09-25
US4245029A (en) * 1979-08-20 1981-01-13 General Electric Company Photocurable compositions using triarylsulfonium salts
US4306953A (en) * 1979-11-05 1981-12-22 American Can Company Cationically polymerizable compositions containing sulfonium salt photoinitiators and stable free radicals as odor suppressants and _method of polymerization using same
US4374077A (en) * 1980-02-01 1983-02-15 Minnesota Mining And Manufacturing Company Process for making information carrying discs
US4394434A (en) * 1980-12-08 1983-07-19 Minnesota Mining And Manufacturing Company Plating resist with improved resistance to extraneous plating
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
EP0130599B1 (de) * 1983-06-29 1988-08-10 Fuji Photo Film Co., Ltd. Photolösungsfähige Zusammensetzung
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
DE3601264A1 (de) * 1985-01-18 1986-07-24 Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa Photosolubilisierbare zusammensetzung
JPH102104A (ja) * 1996-06-12 1998-01-06 Masahiro Oide 住宅用簡易足場取り付け構造

Also Published As

Publication number Publication date
JPS62136638A (ja) 1987-06-19
EP0225454B1 (de) 1989-05-10
EP0225454A3 (en) 1987-11-25
US4665006A (en) 1987-05-12
JPH0381144B2 (de) 1991-12-27
EP0225454A2 (de) 1987-06-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee