DE3587470D1 - Fluessigkristallanzeigevorrichtung. - Google Patents

Fluessigkristallanzeigevorrichtung.

Info

Publication number
DE3587470D1
DE3587470D1 DE8585115694T DE3587470T DE3587470D1 DE 3587470 D1 DE3587470 D1 DE 3587470D1 DE 8585115694 T DE8585115694 T DE 8585115694T DE 3587470 T DE3587470 T DE 3587470T DE 3587470 D1 DE3587470 D1 DE 3587470D1
Authority
DE
Germany
Prior art keywords
insulating film
gate insulating
liquid crystal
thin film
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585115694T
Other languages
English (en)
Other versions
DE3587470T2 (de
Inventor
Shigeo Aoki
Junichi Tamamura
Yasuhiro Ukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Kobe KK
Original Assignee
Hosiden Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hosiden Corp filed Critical Hosiden Corp
Publication of DE3587470D1 publication Critical patent/DE3587470D1/de
Application granted granted Critical
Publication of DE3587470T2 publication Critical patent/DE3587470T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
DE85115694T 1984-12-10 1985-12-10 Flüssigkristallanzeigevorrichtung. Expired - Fee Related DE3587470T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59260474A JPS61138285A (ja) 1984-12-10 1984-12-10 液晶表示素子

Publications (2)

Publication Number Publication Date
DE3587470D1 true DE3587470D1 (de) 1993-08-26
DE3587470T2 DE3587470T2 (de) 1993-12-09

Family

ID=17348447

Family Applications (1)

Application Number Title Priority Date Filing Date
DE85115694T Expired - Fee Related DE3587470T2 (de) 1984-12-10 1985-12-10 Flüssigkristallanzeigevorrichtung.

Country Status (5)

Country Link
US (1) US4723838A (de)
EP (1) EP0186036B1 (de)
JP (1) JPS61138285A (de)
AT (1) ATE91805T1 (de)
DE (1) DE3587470T2 (de)

Families Citing this family (40)

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DE3714164A1 (de) * 1986-04-30 1987-11-05 Sharp Kk Fluessigkristallanzeige
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
DE3808400A1 (de) * 1987-05-14 1988-12-01 Licentia Gmbh Fluessigkristall-anzeigevorrichtung
US4810061A (en) * 1987-06-24 1989-03-07 Alps Electric Co., Ltd. Liquid crystal element having conductive wiring part extending from top of transistor light shield to edge
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JPH01217421A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法
US5245452A (en) * 1988-06-24 1993-09-14 Matsushita Electronics Corporation Active matric drive liquid crystal display device using polycrystalline silicon pixel electrodes
US5053347A (en) * 1989-08-03 1991-10-01 Industrial Technology Research Institute Amorphous silicon thin film transistor with a depletion gate
US5084777A (en) * 1989-11-14 1992-01-28 Greyhawk Systems, Inc. Light addressed liquid crystal light valve incorporating electrically insulating light blocking material of a-SiGe:H
WO1991007689A1 (en) * 1989-11-14 1991-05-30 Greyhawk Systems, Inc. Improved light addressed liquid crystal light valve incorporating electrically insulating light blocking material
WO1991010170A1 (en) * 1989-12-22 1991-07-11 Manufacturing Sciences, Inc. Programmable masking apparatus
JP2538086B2 (ja) * 1990-01-11 1996-09-25 松下電器産業株式会社 液晶表示デバイスおよびその製造方法
US5098860A (en) * 1990-05-07 1992-03-24 The Boeing Company Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
FR2679057B1 (fr) * 1991-07-11 1995-10-20 Morin Francois Structure d'ecran a cristal liquide, a matrice active et a haute definition.
US6556257B2 (en) * 1991-09-05 2003-04-29 Sony Corporation Liquid crystal display device
JPH07175084A (ja) * 1993-12-21 1995-07-14 Hitachi Ltd 液晶表示装置及びその製造方法
US5691782A (en) * 1994-07-08 1997-11-25 Sanyo Electric Co., Ltd. Liquid-crystal display with inter-line short-circuit preventive function and process for producing same
US5614729A (en) * 1994-07-08 1997-03-25 Hosiden Corporation Top gate thin-film transistor
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5650358A (en) * 1995-08-28 1997-07-22 Ois Optical Imaging Systems, Inc. Method of making a TFT having a reduced channel length
JP3149793B2 (ja) * 1996-07-22 2001-03-26 日本電気株式会社 反射型液晶表示装置及びその製造方法
JP2798066B2 (ja) 1996-08-05 1998-09-17 日本電気株式会社 薄膜トランジスター、その製造方法および表示装置
GB9626487D0 (en) * 1996-12-17 1997-02-05 Philips Electronics Nv Electronic devices and their manufacture
JPH11174491A (ja) * 1997-12-08 1999-07-02 Nec Corp アクティブマトリクス型液晶表示装置
JP3022443B2 (ja) * 1997-11-05 2000-03-21 日本電気株式会社 半導体デバイスおよびその製造方法
JP3617458B2 (ja) * 2000-02-18 2005-02-02 セイコーエプソン株式会社 表示装置用基板、液晶装置及び電子機器
GB0029315D0 (en) * 2000-12-01 2001-01-17 Koninkl Philips Electronics Nv Method of increasing the conductivity of a transparent conductive layer
KR100721304B1 (ko) * 2000-12-29 2007-05-25 엘지.필립스 엘시디 주식회사 액정표시장치용 액정패널 및 그의 제조방법
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
CN101807583B (zh) * 2009-02-18 2011-07-27 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
CN102269900B (zh) * 2010-06-03 2013-04-24 北京京东方光电科技有限公司 Tft阵列基板及其制造方法
KR101731047B1 (ko) * 2010-12-01 2017-05-12 삼성디스플레이 주식회사 적외선 감지 트랜지스터, 이를 포함하는 표시 장치의 제조 방법
KR20130027188A (ko) * 2011-09-07 2013-03-15 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102105485B1 (ko) * 2012-11-23 2020-04-29 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR102112844B1 (ko) * 2013-10-15 2020-05-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
US3671820A (en) * 1970-04-27 1972-06-20 Rudolph R Haering High voltage thin-film transistor
US4094582A (en) * 1976-10-18 1978-06-13 Rca Corporation Liquid crystal matrix display device with transistors
JPS5715469A (en) * 1980-07-02 1982-01-26 Matsushita Electric Ind Co Ltd Thin film transistor for transmission type display panel and manufacture thereof
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
FR2533072B1 (fr) * 1982-09-14 1986-07-18 Coissard Pierre Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs
US4597001A (en) * 1984-10-05 1986-06-24 General Electric Company Thin film field-effect transistors with tolerance to electrode misalignment

Also Published As

Publication number Publication date
ATE91805T1 (de) 1993-08-15
EP0186036A2 (de) 1986-07-02
US4723838A (en) 1988-02-09
EP0186036B1 (de) 1993-07-21
DE3587470T2 (de) 1993-12-09
JPH0584490B2 (de) 1993-12-02
EP0186036A3 (en) 1988-09-07
JPS61138285A (ja) 1986-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HOSIDEN AND PHILIPS DISPLAY CORP., KOBE, HYOGO, JP

8339 Ceased/non-payment of the annual fee