DE3582556D1 - Verfahren zum herstellen von kontakten fuer integrierte schaltungen. - Google Patents

Verfahren zum herstellen von kontakten fuer integrierte schaltungen.

Info

Publication number
DE3582556D1
DE3582556D1 DE8585111314T DE3582556T DE3582556D1 DE 3582556 D1 DE3582556 D1 DE 3582556D1 DE 8585111314 T DE8585111314 T DE 8585111314T DE 3582556 T DE3582556 T DE 3582556T DE 3582556 D1 DE3582556 D1 DE 3582556D1
Authority
DE
Germany
Prior art keywords
integrated circuits
producing contacts
contacts
producing
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585111314T
Other languages
English (en)
Inventor
Karen Hill Brown
David Frank Moore
Der Hoeven Van Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3582556D1 publication Critical patent/DE3582556D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0912Manufacture or treatment of Josephson-effect devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/948Radiation resist
    • Y10S438/951Lift-off
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/80Material per se process of making same
    • Y10S505/815Process of making per se
    • Y10S505/818Coating
    • Y10S505/82And etching
DE8585111314T 1984-10-01 1985-09-06 Verfahren zum herstellen von kontakten fuer integrierte schaltungen. Expired - Fee Related DE3582556D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/656,803 US4560435A (en) 1984-10-01 1984-10-01 Composite back-etch/lift-off stencil for proximity effect minimization

Publications (1)

Publication Number Publication Date
DE3582556D1 true DE3582556D1 (de) 1991-05-23

Family

ID=24634635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585111314T Expired - Fee Related DE3582556D1 (de) 1984-10-01 1985-09-06 Verfahren zum herstellen von kontakten fuer integrierte schaltungen.

Country Status (4)

Country Link
US (1) US4560435A (de)
EP (1) EP0181457B1 (de)
JP (1) JPS6185879A (de)
DE (1) DE3582556D1 (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646447B2 (ja) * 1984-07-25 1994-06-15 株式会社日立製作所 薄膜磁気ヘツドの製造方法
US4642162A (en) * 1986-01-02 1987-02-10 Honeywell Inc. Planarization of dielectric layers in integrated circuits
JPS63234533A (ja) * 1987-03-24 1988-09-29 Agency Of Ind Science & Technol ジヨセフソン接合素子の形成方法
NL8703039A (nl) * 1987-12-16 1989-07-17 Philips Nv Werkwijze voor het patroonmatig vervaardigen van een dunne laag uit een oxidisch supergeleidend materiaal.
US5223454A (en) * 1988-01-29 1993-06-29 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
US5049972A (en) * 1988-01-29 1991-09-17 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
GB8804668D0 (en) * 1988-02-27 1988-03-30 Blamire M G Whole-wafer superconducting tunnel junctions
KR930008866B1 (ko) * 1990-04-20 1993-09-16 가부시키가이샤 도시바 반도체장치 및 그 제조방법
DE69210938T2 (de) * 1991-10-18 1997-01-16 Shinko Electric Ind Co Supraleitende Quanteninterferenz-Einrichtung
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US7830587B2 (en) * 1993-03-17 2010-11-09 Qualcomm Mems Technologies, Inc. Method and device for modulating light with semiconductor substrate
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
WO1995002901A1 (en) * 1993-07-15 1995-01-26 Astarix, Inc. Top level via structure for programming prefabricated multi-level interconnect
US8081369B2 (en) * 1994-05-05 2011-12-20 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7776631B2 (en) * 1994-05-05 2010-08-17 Qualcomm Mems Technologies, Inc. MEMS device and method of forming a MEMS device
US7808694B2 (en) 1994-05-05 2010-10-05 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7839556B2 (en) * 1994-05-05 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US8014059B2 (en) 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US7852545B2 (en) 1994-05-05 2010-12-14 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7826120B2 (en) * 1994-05-05 2010-11-02 Qualcomm Mems Technologies, Inc. Method and device for multi-color interferometric modulation
US7460291B2 (en) 1994-05-05 2008-12-02 Idc, Llc Separable modulator
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US5648298A (en) * 1995-03-04 1997-07-15 Hyundai Electronics Industries Co., Ltd. Methods for forming a contact in a semiconductor device
US7898722B2 (en) * 1995-05-01 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical device with restoring electrode
US7929197B2 (en) * 1996-11-05 2011-04-19 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7830588B2 (en) * 1996-12-19 2010-11-09 Qualcomm Mems Technologies, Inc. Method of making a light modulating display device and associated transistor circuitry and structures thereof
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
KR100703140B1 (ko) * 1998-04-08 2007-04-05 이리다임 디스플레이 코포레이션 간섭 변조기 및 그 제조 방법
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
WO2003007049A1 (en) * 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
EP1100120B1 (de) * 1999-11-10 2009-01-07 The Boeing Company Herstellungsverfahren für Dünnschichtbauelemente
DE10058886C1 (de) * 2000-11-27 2002-05-23 Infineon Technologies Ag Verfahren zur Herstellung eines integrierten Halbleiter-Produkts
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US7129590B2 (en) * 2003-05-14 2006-10-31 Intel Corporation Stencil and method for depositing material onto a substrate
JP2005286161A (ja) * 2004-03-30 2005-10-13 Ebara Corp 形状修復方法及び装置、並びにそれらを用いた半導体デバイス製造方法
WO2006014929A1 (en) 2004-07-29 2006-02-09 Idc, Llc System and method for micro-electromechanical operating of an interferometric modulator
US7527995B2 (en) * 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7304784B2 (en) 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7372613B2 (en) * 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US7420725B2 (en) 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7583429B2 (en) 2004-09-27 2009-09-01 Idc, Llc Ornamental display device
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7289259B2 (en) 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US7630119B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7302157B2 (en) 2004-09-27 2007-11-27 Idc, Llc System and method for multi-level brightness in interferometric modulation
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US7884989B2 (en) 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
CN101228091A (zh) 2005-07-22 2008-07-23 高通股份有限公司 用于mems装置的支撑结构及其方法
EP2495212A3 (de) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070268201A1 (en) * 2006-05-22 2007-11-22 Sampsell Jeffrey B Back-to-back displays
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7471442B2 (en) * 2006-06-15 2008-12-30 Qualcomm Mems Technologies, Inc. Method and apparatus for low range bit depth enhancements for MEMS display architectures
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7527998B2 (en) * 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US7916378B2 (en) * 2007-03-08 2011-03-29 Qualcomm Mems Technologies, Inc. Method and apparatus for providing a light absorbing mask in an interferometric modulator display
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7643202B2 (en) 2007-05-09 2010-01-05 Qualcomm Mems Technologies, Inc. Microelectromechanical system having a dielectric movable membrane and a mirror
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7782517B2 (en) 2007-06-21 2010-08-24 Qualcomm Mems Technologies, Inc. Infrared and dual mode displays
US7630121B2 (en) * 2007-07-02 2009-12-08 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
JP2010538306A (ja) 2007-07-31 2010-12-09 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 干渉変調器の色ずれを高めるためのデバイス
US7773286B2 (en) 2007-09-14 2010-08-10 Qualcomm Mems Technologies, Inc. Periodic dimple array
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
EP2212926A2 (de) 2007-10-19 2010-08-04 QUALCOMM MEMS Technologies, Inc. Display mit integrierter fotovoltaik
WO2009055393A1 (en) 2007-10-23 2009-04-30 Qualcomm Mems Technologies, Inc. Adjustably transmissive mems-based devices
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US7969638B2 (en) 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7768690B2 (en) * 2008-06-25 2010-08-03 Qualcomm Mems Technologies, Inc. Backlight displays
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US7859740B2 (en) 2008-07-11 2010-12-28 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US7855826B2 (en) * 2008-08-12 2010-12-21 Qualcomm Mems Technologies, Inc. Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8979349B2 (en) 2009-05-29 2015-03-17 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
KR20130100232A (ko) 2010-04-09 2013-09-10 퀄컴 엠이엠에스 테크놀로지스, 인크. 전기 기계 디바이스의 기계층 및 그 형성 방법
CN103109315A (zh) 2010-08-17 2013-05-15 高通Mems科技公司 对干涉式显示装置中的电荷中性电极的激活和校准
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US3907620A (en) * 1973-06-27 1975-09-23 Hewlett Packard Co A process of forming metallization structures on semiconductor devices
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
US4341850A (en) * 1979-07-19 1982-07-27 Hughes Aircraft Company Mask structure for forming semiconductor devices, comprising electron-sensitive resist patterns with controlled line profiles
US4432134A (en) * 1982-05-10 1984-02-21 Rockwell International Corporation Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices

Also Published As

Publication number Publication date
EP0181457A2 (de) 1986-05-21
EP0181457A3 (en) 1988-03-09
JPH0334870B2 (de) 1991-05-24
US4560435A (en) 1985-12-24
EP0181457B1 (de) 1991-04-17
JPS6185879A (ja) 1986-05-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee