DE3563285D1 - Construction process of a semiconductor laser mirror by ion etching - Google Patents

Construction process of a semiconductor laser mirror by ion etching

Info

Publication number
DE3563285D1
DE3563285D1 DE8585400624T DE3563285T DE3563285D1 DE 3563285 D1 DE3563285 D1 DE 3563285D1 DE 8585400624 T DE8585400624 T DE 8585400624T DE 3563285 T DE3563285 T DE 3563285T DE 3563285 D1 DE3563285 D1 DE 3563285D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
ion etching
construction process
laser mirror
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585400624T
Other languages
English (en)
Inventor
Noureddine Bouadma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3563285D1 publication Critical patent/DE3563285D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
DE8585400624T 1984-04-03 1985-03-29 Construction process of a semiconductor laser mirror by ion etching Expired DE3563285D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8405223A FR2562339B1 (fr) 1984-04-03 1984-04-03 Procede de realisation d'un miroir de laser a semi-conducteur, par usinage ionique

Publications (1)

Publication Number Publication Date
DE3563285D1 true DE3563285D1 (en) 1988-07-14

Family

ID=9302778

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585400624T Expired DE3563285D1 (en) 1984-04-03 1985-03-29 Construction process of a semiconductor laser mirror by ion etching

Country Status (6)

Country Link
US (1) US4865684A (de)
EP (1) EP0158565B1 (de)
JP (1) JPS61501739A (de)
DE (1) DE3563285D1 (de)
FR (1) FR2562339B1 (de)
WO (1) WO1985004529A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3738053A1 (de) * 1987-11-09 1989-05-18 Siemens Ag Laseranordnung mit mindestens einem laserresonator und einem damit verkoppelten passiven resonator
KR900009229B1 (ko) * 1988-04-28 1990-12-24 한국 과학기술원 선택적 에피택시법에 의한 표면 방출형 AlGaAs/GaAs 반도체 레이저 다이오드의 제조방법
JP2991716B2 (ja) * 1988-08-16 1999-12-20 三菱化学株式会社 エッチトミラー型化合物半導体レーザー装置及び集積素子
US5259925A (en) * 1992-06-05 1993-11-09 Mcdonnell Douglas Corporation Method of cleaning a plurality of semiconductor devices
JPH0677181A (ja) * 1992-08-26 1994-03-18 Matsushita Electric Ind Co Ltd 化合物半導体の微細構造形成方法
KR0178492B1 (ko) * 1995-12-21 1999-04-15 양승택 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법
JPH09298339A (ja) * 1996-04-30 1997-11-18 Rohm Co Ltd 半導体レーザの製法
US6781099B2 (en) * 2001-03-12 2004-08-24 Karl-Heinz Krah Gmbh Electrofusion socket forming system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4248688A (en) * 1979-09-04 1981-02-03 International Business Machines Corporation Ion milling of thin metal films
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
DE3138704A1 (de) * 1981-09-29 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden-resonatorspiegeln
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
US4397711A (en) * 1982-10-01 1983-08-09 Bell Telephone Laboratories, Incorporated Crystallographic etching of III-V semiconductor materials
JPS59219974A (ja) * 1983-05-27 1984-12-11 Matsushita Electric Ind Co Ltd 半導体レ−ザの製造方法

Also Published As

Publication number Publication date
FR2562339B1 (fr) 1986-06-20
EP0158565A1 (de) 1985-10-16
FR2562339A1 (fr) 1985-10-04
EP0158565B1 (de) 1988-06-08
JPS61501739A (ja) 1986-08-14
US4865684A (en) 1989-09-12
WO1985004529A1 (fr) 1985-10-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee