DE3484255D1 - Verfahren zum eintreiben von dotierungsmitteln in halbleiterscheiben bei hohen temperaturen. - Google Patents

Verfahren zum eintreiben von dotierungsmitteln in halbleiterscheiben bei hohen temperaturen.

Info

Publication number
DE3484255D1
DE3484255D1 DE8484305792T DE3484255T DE3484255D1 DE 3484255 D1 DE3484255 D1 DE 3484255D1 DE 8484305792 T DE8484305792 T DE 8484305792T DE 3484255 T DE3484255 T DE 3484255T DE 3484255 D1 DE3484255 D1 DE 3484255D1
Authority
DE
Germany
Prior art keywords
driving
high temperatures
doping agents
semiconductor disc
disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484305792T
Other languages
English (en)
Inventor
Carl Joseph Russo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3484255D1 publication Critical patent/DE3484255D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light
DE8484305792T 1983-08-29 1984-08-23 Verfahren zum eintreiben von dotierungsmitteln in halbleiterscheiben bei hohen temperaturen. Expired - Fee Related DE3484255D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/527,140 US4503087A (en) 1983-08-29 1983-08-29 Process for high temperature drive-in diffusion of dopants into semiconductor wafers

Publications (1)

Publication Number Publication Date
DE3484255D1 true DE3484255D1 (de) 1991-04-18

Family

ID=24100259

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484305792T Expired - Fee Related DE3484255D1 (de) 1983-08-29 1984-08-23 Verfahren zum eintreiben von dotierungsmitteln in halbleiterscheiben bei hohen temperaturen.

Country Status (4)

Country Link
US (1) US4503087A (de)
EP (1) EP0134716B1 (de)
JP (1) JPH0834191B2 (de)
DE (1) DE3484255D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717588A (en) * 1985-12-23 1988-01-05 Motorola Inc. Metal redistribution by rapid thermal processing
US4791273A (en) * 1987-05-15 1988-12-13 Varian Associates, Inc. Vaporizer system for ion source
JPH05275433A (ja) * 1992-03-27 1993-10-22 Rohm Co Ltd 半導体装置の製法
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6133550A (en) 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US5954982A (en) * 1997-02-12 1999-09-21 Nikon Corporation Method and apparatus for efficiently heating semiconductor wafers or reticles
FR2974238A1 (fr) * 2011-04-12 2012-10-19 St Microelectronics Crolles 2 Procede de realisation d'un capteur d'images a eclairement par la face arriere

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901183A (en) * 1973-06-12 1975-08-26 Extrion Corp Wafer treatment apparatus
US3842794A (en) * 1973-06-29 1974-10-22 Ibm Apparatus for high temperature semiconductor processing
US3954191A (en) * 1974-11-18 1976-05-04 Extrion Corporation Isolation lock for workpieces
US4017967A (en) * 1975-03-31 1977-04-19 Black Body Corporation Method of making infrared emitter
US4041278A (en) * 1975-05-19 1977-08-09 General Electric Company Heating apparatus for temperature gradient zone melting
JPS5750428A (en) * 1980-09-12 1982-03-24 Nec Corp Method and apparatus for manufacturing semiconductor device
JPS5769733A (en) * 1980-10-16 1982-04-28 Matsushita Electric Ind Co Ltd Heat treatment of semiconductor substrate
JPS57147237A (en) * 1981-03-06 1982-09-11 Sony Corp Heat treatment device
US4421477A (en) * 1981-04-13 1983-12-20 Matsushita Electric Industrial Co., Ltd. Combustion wick
US4417347A (en) * 1981-05-12 1983-11-22 Varian Associates, Inc. Semiconductor processor incorporating blackbody radiation source with constant planar energy flux
JPS58223320A (ja) * 1982-06-22 1983-12-24 Ushio Inc 不純物拡散方法

Also Published As

Publication number Publication date
US4503087A (en) 1985-03-05
EP0134716B1 (de) 1991-03-13
JPH0834191B2 (ja) 1996-03-29
JPS6072227A (ja) 1985-04-24
EP0134716A1 (de) 1985-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.

8339 Ceased/non-payment of the annual fee