DE3466255D1 - Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.) - Google Patents

Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.)

Info

Publication number
DE3466255D1
DE3466255D1 DE8484901081T DE3466255T DE3466255D1 DE 3466255 D1 DE3466255 D1 DE 3466255D1 DE 8484901081 T DE8484901081 T DE 8484901081T DE 3466255 T DE3466255 T DE 3466255T DE 3466255 D1 DE3466255 D1 DE 3466255D1
Authority
DE
Germany
Prior art keywords
utilization
atoms
stream
forming
epitaxy process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484901081T
Other languages
English (en)
Inventor
Marcel Bensoussan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3466255D1 publication Critical patent/DE3466255D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
DE8484901081T 1983-03-07 1984-03-06 Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.) Expired DE3466255D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8303691A FR2542327B1 (de) 1983-03-07 1983-03-07
PCT/FR1984/000052 WO1984003524A1 (fr) 1983-03-07 1984-03-06 Procede de formation d'un flux d'atomes et son utilisation dans un procede et un dispositif d'epitaxie par jets atomiques (e.j.a.)

Publications (1)

Publication Number Publication Date
DE3466255D1 true DE3466255D1 (en) 1987-10-22

Family

ID=9286562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484901081T Expired DE3466255D1 (en) 1983-03-07 1984-03-06 Method for forming a stream of atoms and utilization thereof in an atomic jet epitaxy process and device (e.j.a.)

Country Status (6)

Country Link
US (1) US4664940A (de)
EP (1) EP0143792B1 (de)
JP (1) JPS60500860A (de)
DE (1) DE3466255D1 (de)
FR (1) FR2542327B1 (de)
WO (1) WO1984003524A1 (de)

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* Cited by examiner, † Cited by third party
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US5294285A (en) * 1986-02-07 1994-03-15 Canon Kabushiki Kaisha Process for the production of functional crystalline film
US5200230A (en) * 1987-06-29 1993-04-06 Dunfries Investments Limited Laser coating process
US5411797A (en) * 1988-04-18 1995-05-02 Board Of Regents, The University Of Texas System Nanophase diamond films
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US5322589A (en) * 1989-02-09 1994-06-21 Fujitsu Limited Process and apparatus for recrystallization of semiconductor layer
JPH0717477B2 (ja) * 1989-03-15 1995-03-01 シャープ株式会社 化合物半導体のエピタキシャル成長方法
US5002798A (en) * 1989-04-10 1991-03-26 University Of Dayton Method for forming thin solid lubricious films and film articles made thereby
JPH0826451B2 (ja) * 1989-04-13 1996-03-13 松下電器産業株式会社 スパッタリング方法
DE3925085C1 (de) * 1989-07-28 1991-01-10 Battelle-Institut Ev, 6000 Frankfurt, De
US5207884A (en) * 1990-12-24 1993-05-04 Conductus, Inc. Superconductor deposition system
DE4229399C2 (de) * 1992-09-03 1999-05-27 Deutsch Zentr Luft & Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
US5733609A (en) * 1993-06-01 1998-03-31 Wang; Liang Ceramic coatings synthesized by chemical reactions energized by laser plasmas
AU4194896A (en) * 1994-10-18 1996-05-06 Edsi, Inc. Apparatus for depositing a layer of material on a substrate
JP3386302B2 (ja) * 1995-12-20 2003-03-17 三菱電機株式会社 化合物半導体へのｎ型ドーピング方法およびこれを用いた化学ビーム堆積方法並びにこれらの結晶成長方法によって形成された化合物半導体結晶およびこの化合物半導体結晶によって構成された電子デバイスおよび光デバイス
DE19628102A1 (de) * 1996-07-12 1998-01-15 Bayerische Motoren Werke Ag Vakuumbeschichtungsanlage mit einer Beschichtungskammer und zumindest einer Quellenkammer
US5886320A (en) * 1996-09-03 1999-03-23 International Business Machines Corporation Laser ablation with transmission matching for promoting energy coupling to a film stack
US6113751A (en) * 1998-08-06 2000-09-05 Lockheed Martin Corporation Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate
DE69937042T2 (de) * 1998-09-11 2008-05-29 Japan Science And Technology Agency, Kawaguchi Kombinatorische vorrichtung für epitaktische molekularschicht
US6562705B1 (en) * 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
JP2001276702A (ja) * 2000-03-28 2001-10-09 Toshiba Corp 成膜装置及び成膜方法
US6391528B1 (en) 2000-04-03 2002-05-21 3M Innovative Properties Company Methods of making wire grid optical elements by preferential deposition of material on a substrate
ES2270997T3 (es) * 2000-04-03 2007-04-16 3M Innovative Properties Company Deposicion selectiva de material sobre un sustrato segun un diseño de interferencia.
CN101622722B (zh) * 2007-02-27 2012-11-21 卡尔蔡司激光器材有限责任公司 连续涂覆设备、生产晶态薄膜和太阳电池的方法
US8895892B2 (en) * 2008-10-23 2014-11-25 Corning Incorporated Non-contact glass shearing device and method for scribing or cutting a moving glass sheet
JP4948629B2 (ja) * 2010-07-20 2012-06-06 ウシオ電機株式会社 レーザリフトオフ方法
US8164092B2 (en) * 2010-10-18 2012-04-24 The University Of Utah Research Foundation PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods
DE102018127262A1 (de) * 2018-10-31 2020-04-30 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Beschichtungsvorrichtung sowie Verfahren zum Beschichten eines Substrats
CN114654097B (zh) * 2022-02-24 2023-03-07 苏州大学 基于分子束外延原位激光干涉光刻方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045551B1 (de) * 1980-08-05 1984-10-31 L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique Verfahren zur Herstellung polykristalliner Filme aus Halbleitern, die aus einer Verbindung oder einem Element bestehen, und dabei erhaltene Filme
JPS5864368A (ja) * 1981-10-12 1983-04-16 Inoue Japax Res Inc 化学メツキ方法
FR2544752B1 (fr) * 1983-04-25 1985-07-05 Commissariat Energie Atomique Procede de croissance amorphe d'un corps avec cristallisation sous rayonnement

Also Published As

Publication number Publication date
JPS60500860A (ja) 1985-06-06
EP0143792B1 (de) 1987-09-16
US4664940A (en) 1987-05-12
WO1984003524A1 (fr) 1984-09-13
FR2542327B1 (de) 1986-03-07
FR2542327A1 (de) 1984-09-14
EP0143792A1 (de) 1985-06-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee