DE3382401D1 - Photolackzusammensetzung. - Google Patents

Photolackzusammensetzung.

Info

Publication number
DE3382401D1
DE3382401D1 DE8383104285T DE3382401T DE3382401D1 DE 3382401 D1 DE3382401 D1 DE 3382401D1 DE 8383104285 T DE8383104285 T DE 8383104285T DE 3382401 T DE3382401 T DE 3382401T DE 3382401 D1 DE3382401 D1 DE 3382401D1
Authority
DE
Germany
Prior art keywords
paint composition
photo paint
photo
composition
paint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8383104285T
Other languages
English (en)
Inventor
Hiroshi Ito
Carlton Grant Willson
Jean M J Frechet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3382401D1 publication Critical patent/DE3382401D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/016Diazonium salts or compounds
    • G03F7/021Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/109Polyester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic
DE8383104285T 1982-08-23 1983-05-02 Photolackzusammensetzung. Expired - Fee Related DE3382401D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/410,201 US4491628A (en) 1982-08-23 1982-08-23 Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone

Publications (1)

Publication Number Publication Date
DE3382401D1 true DE3382401D1 (de) 1991-10-10

Family

ID=23623700

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8383104285T Expired - Fee Related DE3382401D1 (de) 1982-08-23 1983-05-02 Photolackzusammensetzung.
DE3382809T Expired - Fee Related DE3382809T2 (de) 1982-08-23 1983-05-02 Photolackzusammensetzung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3382809T Expired - Fee Related DE3382809T2 (de) 1982-08-23 1983-05-02 Photolackzusammensetzung

Country Status (4)

Country Link
US (1) US4491628A (de)
EP (2) EP0102450B1 (de)
JP (1) JPS5945439A (de)
DE (2) DE3382401D1 (de)

Families Citing this family (756)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4770977A (en) * 1984-09-21 1988-09-13 Commissariat A L'energie Atomique Silicon-containing polymer and its use as a masking resin in a lithography process
FR2570844B1 (fr) * 1984-09-21 1986-11-14 Commissariat Energie Atomique Film photosensible a base de polymere silicie et son utilisation comme resine de masquage dans un procede de lithographie
DE3685766T2 (de) * 1985-04-18 1993-02-11 Oki Electric Ind Co Ltd Photolackbildherstellungsverfahren.
US4663269A (en) * 1985-08-07 1987-05-05 Polytechnic Institute Of New York Method of forming highly sensitive photoresist film in the absence of water
US4929536A (en) * 1985-08-12 1990-05-29 Hoechst Celanese Corporation Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
US4665006A (en) * 1985-12-09 1987-05-12 International Business Machines Corporation Positive resist system having high resistance to oxygen reactive ion etching
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4912018A (en) * 1986-02-24 1990-03-27 Hoechst Celanese Corporation High resolution photoresist based on imide containing polymers
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4897336A (en) * 1986-04-11 1990-01-30 Chien James C W Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
US4689289A (en) * 1986-04-30 1987-08-25 General Electric Company Block polymer compositions
US5310619A (en) * 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
EP0249139B2 (de) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Lackzusammensetzung und -anwendung
US5362607A (en) * 1986-06-13 1994-11-08 Microsi, Inc. Method for making a patterned resist substrate composite
US4939070A (en) * 1986-07-28 1990-07-03 Brunsvold William R Thermally stable photoresists with high sensitivity
JPS6336240A (ja) * 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
EP0264908B1 (de) * 1986-10-23 1996-03-20 International Business Machines Corporation Hochempfindliche Resiste mit Selbstzersetzungstemperatur grösser als etwa 160 Grad Celsius
US4931379A (en) * 1986-10-23 1990-06-05 International Business Machines Corporation High sensitivity resists having autodecomposition temperatures greater than about 160° C.
US4800152A (en) * 1987-03-16 1989-01-24 International Business Machines Corporation Negative resist compositions
US4965322A (en) * 1987-04-06 1990-10-23 Asahi Kasei Kogyo Kabushiki Kaisha Photosensitive and heat-sensitive polymers, process for producing the same and process for recording information using the same
US4775609A (en) * 1987-05-18 1988-10-04 Hoescht Celanese Corporation Image reversal
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US5081001A (en) * 1987-05-22 1992-01-14 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4962171A (en) * 1987-05-22 1990-10-09 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
US4916247A (en) * 1987-09-07 1990-04-10 Ciba-Geigy Corporation Organometal-containing compounds
EP0307353A3 (de) * 1987-09-07 1990-09-12 Ciba-Geigy Ag Organometallhaltige Polymere und deren Verwendung
DE3821585A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US4824758A (en) * 1988-01-25 1989-04-25 Hoechst Celanese Corp Photoresist compositions based on acetoxystyrene copolymers
JP2540199B2 (ja) * 1988-02-25 1996-10-02 アメリカン テレフォン アンド テレグラフ カムパニー デバイスの製造方法
US4996136A (en) * 1988-02-25 1991-02-26 At&T Bell Laboratories Radiation sensitive materials and devices made therewith
DE3812325A1 (de) * 1988-04-14 1989-10-26 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien und verfahren zur herstellung von reliefmustern und reliefbildern
DE3817010A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
DE3817009A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5290666A (en) * 1988-08-01 1994-03-01 Hitachi, Ltd. Method of forming a positive photoresist pattern utilizing contrast enhancement overlayer containing trifluoromethanesulfonic, methanesulfonic or trifluoromethaneacetic aromatic diazonium salt
JP2768692B2 (ja) * 1988-08-01 1998-06-25 株式会社日立製作所 感放射線組成物及びパターン形成方法
US6051659A (en) * 1992-08-20 2000-04-18 International Business Machines Corporation Highly sensitive positive photoresist composition
DE68926019T2 (de) * 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
DE3837438A1 (de) * 1988-11-04 1990-05-10 Basf Ag Strahlungsempfindliches gemisch
DE3837513A1 (de) * 1988-11-04 1990-05-10 Basf Ag Strahlungsempfindliches gemisch
DE3902115A1 (de) * 1989-01-25 1990-08-02 Basf Ag Strahlungsempfindliche polymere
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE69027799T2 (de) * 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
JP2661671B2 (ja) * 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
US5391465A (en) * 1989-06-20 1995-02-21 Rohm And Haas Company Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
DE69029104T2 (de) 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxane und positiv arbeitende Resistmasse
US5220037A (en) * 1989-07-22 1993-06-15 Basf Aktiengesellschaft Sulfonium salts and use thereof
DE3924298A1 (de) * 1989-07-22 1991-02-07 Basf Ag Neue sulfoniumsalze und deren verwendung
DE3927632A1 (de) * 1989-08-22 1991-02-28 Basf Ag Umsetzungsprodukt, verfahren zu dessen herstellung und damit erhaltenes strahlungsempfindliches material
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930584A1 (de) * 1989-09-13 1991-03-14 Basf Ag Auf elektrophotographischem wege hergestellte offsetdruckplatte mit hydrophilen betonerten bereichen und oleophilen unbetonerten bereichen
DE3935875A1 (de) * 1989-10-27 1991-05-02 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5023164A (en) * 1989-10-23 1991-06-11 International Business Machines Corporation Highly sensitive dry developable deep UV photoresist
DE3940965A1 (de) * 1989-12-12 1991-06-13 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefstrukturen
CA2051400A1 (en) * 1989-12-15 1991-06-16 Alan R. Browne Autodeposition emulsion for selectively protecting metallic surfaces
US5216135A (en) * 1990-01-30 1993-06-01 Wako Pure Chemical Industries, Ltd. Diazodisulfones
EP0440374B1 (de) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemisch verstärktes Photolack-Material
JPH03223858A (ja) * 1990-01-30 1991-10-02 Matsushita Electric Ind Co Ltd パターン形成方法
DE4005212A1 (de) * 1990-02-20 1991-08-22 Basf Ag Strahlungsempfindliches gemisch
DE4007924A1 (de) * 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JP2661317B2 (ja) * 1990-03-27 1997-10-08 松下電器産業株式会社 パターン形成方法
JP2632066B2 (ja) * 1990-04-06 1997-07-16 富士写真フイルム株式会社 ポジ画像の形成方法
US5077174A (en) * 1990-04-10 1991-12-31 E. I. Du Pont De Nemours And Company Positive working dry film element having a layer of resist composition
US5262281A (en) * 1990-04-10 1993-11-16 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US4985332A (en) * 1990-04-10 1991-01-15 E. I. Du Pont De Nemours And Company Resist material with carbazole diazonium salt acid generator and process for use
US5120629A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Positive-working photosensitive electrostatic master
US5212047A (en) * 1990-04-10 1993-05-18 E. I. Du Pont De Nemours And Company Resist material and process for use
US5120633A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
US5219711A (en) * 1990-04-10 1993-06-15 E. I. Du Pont De Nemours And Company Positive image formation utilizing resist material with carbazole diazonium salt acid generator
US5145764A (en) * 1990-04-10 1992-09-08 E. I. Du Pont De Nemours And Company Positive working resist compositions process of exposing, stripping developing
US5206317A (en) * 1990-04-10 1993-04-27 E. I. Du Pont De Nemours And Company Resist material and process for use
DE59010864D1 (de) * 1990-04-12 1999-04-15 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
JP2648804B2 (ja) * 1990-04-24 1997-09-03 インターナショナル・ビジネス・マシーンズ・コーポレイション ドライフィルム型の水性処理可能なホトレジスト組成物
JP2648805B2 (ja) * 1990-04-24 1997-09-03 インターナショナル・ビジネス・マシーンズ・コーポレイション 液体適用型の水性処理可能なホトレジスト組成物
US5045431A (en) * 1990-04-24 1991-09-03 International Business Machines Corporation Dry film, aqueous processable photoresist compositions
DE59010396D1 (de) * 1990-04-27 1996-08-01 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
JP2645384B2 (ja) * 1990-05-21 1997-08-25 日本ペイント株式会社 ポジ型感光性樹脂組成物
KR950002874B1 (ko) * 1990-06-25 1995-03-27 마쯔시다덴시고오교오 가부시기가이샤 광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체
DE69130594T2 (de) * 1990-06-29 1999-05-06 Fujitsu Ltd Verfahren zur Erzeugung eines Musters
US5066566A (en) * 1990-07-31 1991-11-19 At&T Bell Laboratories Resist materials
JPH0488346A (ja) * 1990-07-31 1992-03-23 Nippon Paint Co Ltd レジスト組成物
US5229244A (en) * 1990-08-08 1993-07-20 E. I. Du Pont De Nemours And Company Dry processible photosensitive composition including photo-acid generator and optically clear polymer (co-polymer) blend that becomes tacky upon exposure to actinic radiation
EP0476865A1 (de) * 1990-08-31 1992-03-25 Wako Pure Chemical Industries Ltd Resistmaterial und Verfahren zur Herstellung eines Bildes unter Verwendung desselben
KR920008537A (ko) * 1990-10-19 1992-05-28 원본미기재 내식막 조성물
JPH04158363A (ja) * 1990-10-22 1992-06-01 Mitsubishi Electric Corp パターン形成用レジスト材料
US5082965A (en) * 1990-10-29 1992-01-21 E. I. Du Pont De Nemours And Company Process for preparation of alkoxycarbonyloxystyrene
US5304690A (en) * 1990-11-16 1994-04-19 Hoechst Celanese Corporation Process for the preparation of salts of 4-hydroxystyrene
US5256809A (en) * 1990-11-16 1993-10-26 Hoechst Celanese Corporation Method for preparing a salt of 4-hydroxystyrene and for preparing 4-tertiary-butoxycarbonyloxystyrene therefrom
US5241098A (en) * 1990-11-16 1993-08-31 Hoechst Celanese Corporation Method for preparing a salt of 4-hydroxystyrene and for preparing 4-tertiary-butoxycarbonyloxystyrene therefrom
JPH04184345A (ja) * 1990-11-19 1992-07-01 Fujitsu Ltd レジストパターンの形成方法
JP3031421B2 (ja) * 1990-11-28 2000-04-10 信越化学工業株式会社 化学増幅ポジ型レジスト材
ES2076450T3 (es) * 1990-12-20 1995-11-01 Siemens Ag Polimeros mixtos.
EP0492253B1 (de) * 1990-12-20 1997-04-23 Siemens Aktiengesellschaft Photostrukturierungsverfahren
EP0494383B1 (de) * 1990-12-20 1996-08-14 Siemens Aktiengesellschaft Photoresist
ES2090218T3 (es) * 1990-12-20 1996-10-16 Siemens Ag Generacion estructural fotolitografica.
JP2968349B2 (ja) * 1991-02-01 1999-10-25 日本ペイント株式会社 多色表示装置の製造方法
JPH04253939A (ja) * 1991-02-05 1992-09-09 Shin Etsu Chem Co Ltd パラ第三級ブトキシカルボニルオキシスチレンの合成方法
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US5851736A (en) * 1991-03-05 1998-12-22 Nitto Denko Corporation Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
US5403695A (en) * 1991-04-30 1995-04-04 Kabushiki Kaisha Toshiba Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups
JP2707164B2 (ja) * 1991-05-28 1998-01-28 信越化学工業株式会社 レジスト材
JPH04350657A (ja) * 1991-05-28 1992-12-04 Shin Etsu Chem Co Ltd レジスト材
JPH04359906A (ja) * 1991-06-07 1992-12-14 Shin Etsu Chem Co Ltd ポリ(パラ−t−ブトキシカルボニルオキシスチレン)及びその製造方法
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
DE4120172A1 (de) * 1991-06-19 1992-12-24 Hoechst Ag Strahlungsempfindliches gemisch, das als bindemittel neue polymere mit einheiten aus amiden von (alpha),(beta)-ungesaettigten carbonsaeuren enthaelt
JP2655369B2 (ja) * 1991-06-28 1997-09-17 富士写真フイルム株式会社 感光性組成物
DE4124028A1 (de) * 1991-07-19 1993-01-21 Hoechst Ag Verfahren zur herstellung von n-tert.-butoxycarbonyl-maleimid
DE4124029A1 (de) * 1991-07-19 1993-01-21 Hoechst Ag Verfahren zur herstellung von tert.-butyloxycarbonyl-gruppen tragenden organischen verbindungen
EP0524759A1 (de) * 1991-07-23 1993-01-27 AT&T Corp. Verfahren zur Herstellung einer Vorrichtung
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
DE4126409A1 (de) * 1991-08-09 1993-02-11 Hoechst Ag Strahlungsempfindliches gemisch mit einem polymeren bindemittel mit einheiten aus (alpha)-(beta)-ungesaettigten carbonsaeuren
US5506088A (en) * 1991-09-17 1996-04-09 Fujitsu Limited Chemically amplified resist composition and process for forming resist pattern using same
US5258257A (en) * 1991-09-23 1993-11-02 Shipley Company Inc. Radiation sensitive compositions comprising polymer having acid labile groups
US5439582A (en) * 1991-10-02 1995-08-08 Nippon Paint Co., Ltd. Process for producing multicolor display
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
JP2964107B2 (ja) * 1991-11-11 1999-10-18 日本電信電話株式会社 ポジ型レジスト材料
US5229256A (en) * 1991-12-06 1993-07-20 International Business Machines Corporation Process for generating positive-tone photoresist image
DE69218393T2 (de) * 1991-12-16 1997-10-16 Wako Pure Chem Ind Ltd Resistmaterial
DE4202845A1 (de) * 1992-01-31 1993-08-05 Basf Ag Strahlungsempfindliches gemisch
US5342734A (en) * 1992-02-25 1994-08-30 Morton International, Inc. Deep UV sensitive photoresist resistant to latent image decay
JP2694097B2 (ja) * 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
JP2559192B2 (ja) * 1992-04-07 1996-12-04 インターナショナル・ビジネス・マシーンズ・コーポレイション ヒドロキシ芳香族化合物の炭酸化物を生成させるための改良された方法
TW304235B (de) * 1992-04-29 1997-05-01 Ocg Microelectronic Materials
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
US5384229A (en) * 1992-05-07 1995-01-24 Shipley Company Inc. Photoimageable compositions for electrodeposition
US5587274A (en) * 1992-06-19 1996-12-24 Nippon Paint Co., Ltd. Resist composition
JP3202792B2 (ja) * 1992-06-19 2001-08-27 日本ペイント株式会社 レジスト組成物
US6111133A (en) * 1992-09-23 2000-08-29 Lucent Technologies Inc. Process for preparing substituted styrenes
US5319142A (en) * 1992-10-06 1994-06-07 Hoechst Celanese Corporation Process for preparing substituted and unsubstituted arylalkylamines
US5480748A (en) * 1992-10-21 1996-01-02 International Business Machines Corporation Protection of aluminum metallization against chemical attack during photoresist development
WO1994010608A1 (en) * 1992-10-29 1994-05-11 International Business Machines Corporation Chemically amplified photoresist
EP0605089B1 (de) * 1992-11-03 1999-01-07 International Business Machines Corporation Photolackzusammensetzung
JP2688168B2 (ja) 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
JP2654339B2 (ja) * 1992-11-24 1997-09-17 インターナショナル・ビジネス・マシーンズ・コーポレイション 感光性レジスト組成物及び基板上にレジスト像を形成する方法
US5395734A (en) * 1992-11-30 1995-03-07 Minnesota Mining And Manufacturing Company Shoot and run printing materials
EP0601974B1 (de) * 1992-12-04 1997-05-28 OCG Microelectronic Materials Inc. Positiv-Photoresist mit verbesserten Prozesseigenschaften
DE4242050A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag Polymere mit N,N-disubstituierten Sulfonamid-Seitengruppen und deren Verwendung
DE4242051A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag N,N-Disubstituierte Sulfonamide und damit hergestelltes strahlungsempfindliches Gemisch
US5372912A (en) * 1992-12-31 1994-12-13 International Business Machines Corporation Radiation-sensitive resist composition and process for its use
JPH06214395A (ja) * 1993-01-18 1994-08-05 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
DE69406687T2 (de) * 1993-01-25 1998-05-14 At & T Corp Ein Verfahren zum gesteuerten Entschützen von Polymeren und Verfahren zur Herstellung einer Vorrichtung welches diese zum Teil entschützten Polymere für Photoresiste benutzt
KR100355254B1 (en) * 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
US5308744A (en) * 1993-03-05 1994-05-03 Morton International, Inc. Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives
US5314782A (en) * 1993-03-05 1994-05-24 Morton International, Inc. Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative
US6703181B1 (en) 1993-03-12 2004-03-09 Kabushiki Kaisha Toshiba Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same
US5496678A (en) * 1993-04-16 1996-03-05 Kansai Paint Co., Ltd. Photosensitive compositions containing a polymer with carboxyl and hydroxyphenyl groups, a compound with multiple ethylenic unsaturation and a photo-acid generator
JP3339157B2 (ja) * 1993-05-31 2002-10-28 ソニー株式会社 感光性組成物及びパターン形成方法
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JP3297199B2 (ja) * 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
US5744281A (en) * 1993-09-14 1998-04-28 Kabushiki Kaisha Toshiba Resist composition for forming a pattern and method of forming a pattern wherein the composition 4-phenylpyridine as an additive
JP3353258B2 (ja) * 1993-10-26 2002-12-03 富士通株式会社 遠紫外線用レジスト
US5688628A (en) * 1993-11-11 1997-11-18 Nippon Zeon Co., Ltd. Resist composition
DE69425862T2 (de) * 1993-11-17 2001-05-03 At & T Corp Verfahren zur Herstellung einer Vorrichtung unter Benutzung einer lichtempfindlichen Zusammensetzung
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
JP3271728B2 (ja) * 1994-02-14 2002-04-08 日本電信電話株式会社 ポジ型レジスト組成物
US5486267A (en) * 1994-02-28 1996-01-23 International Business Machines Corporation Method for applying photoresist
US5597868A (en) * 1994-03-04 1997-01-28 Massachusetts Institute Of Technology Polymeric anti-reflective compounds
US5663035A (en) * 1994-04-13 1997-09-02 Hoechst Japan Limited Radiation-sensitive mixture comprising a basic iodonium compound
US5736296A (en) * 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
DE4414897A1 (de) * 1994-04-28 1995-11-02 Hoechst Ag Aromatische Diazoniumsalze und deren Verwendung in strahlungsempfindlichen Gemischen
DE4414896A1 (de) * 1994-04-28 1995-11-02 Hoechst Ag Positiv arbeitendes strahlungempfindliches Gemisch
US5733706A (en) * 1994-05-25 1998-03-31 Siemens Aktiengesellschaft Dry-developable positive resist
US5580694A (en) 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
JP3033443B2 (ja) 1994-06-29 2000-04-17 信越化学工業株式会社 反射防止膜材料
US5561216A (en) * 1994-07-01 1996-10-01 University Of North Carolina At Chapel Hill Late transition metal catalysts for the CO- and terpolymerization of olefin and alkyne monomers with carbon monoxide
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
DE59504286D1 (de) * 1994-09-12 1998-12-24 Siemens Ag Photolithographische strukturerzeugung
EP0786701A4 (de) * 1994-10-13 1998-08-12 Nippon Zeon Co Photolackzusammensetzung
JPH08110638A (ja) 1994-10-13 1996-04-30 Hitachi Chem Co Ltd 感光性樹脂組成物およびレジスト像の製造法
JP3198845B2 (ja) * 1994-12-05 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3585277B2 (ja) * 1994-12-05 2004-11-04 本州化学工業株式会社 スチレン誘導体の製造方法
US5663036A (en) * 1994-12-13 1997-09-02 International Business Machines Corporation Microlithographic structure with an underlayer film comprising a thermolyzed azide
DE4444669A1 (de) * 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
JP3277114B2 (ja) * 1995-02-17 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 陰画調レジスト像の作製方法
KR100293130B1 (ko) * 1995-04-12 2001-09-17 카나가와 치히로 고분자화합물및화학증폭포지티브형레지스트재료
JPH0954437A (ja) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JP3046225B2 (ja) * 1995-06-15 2000-05-29 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
US5922810A (en) * 1995-07-31 1999-07-13 Fmc Corporation Deprotection of protected functional polymers
KR0178475B1 (ko) * 1995-09-14 1999-03-20 윤덕용 신규한 n-비닐락탐 유도체 및 그의 중합체
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
US6391512B1 (en) * 1995-10-20 2002-05-21 Konica Corporation Image forming material and image forming method
JP3073149B2 (ja) 1995-10-30 2000-08-07 東京応化工業株式会社 ポジ型レジスト組成物
TW477913B (en) * 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
KR100191126B1 (ko) 1995-11-28 1999-06-15 윤덕용 비닐4-t-부톡시카르보닐옥시벤잘-비닐 알코올-비닐 아세테이트 공중합체와 비닐 4-t-부톡시카르보닐옥시벤잘-비닐 4-히드록시벤잘-비닐 알코올-비닐 아세테이트 공중합체 및 그들의 제조방법
US6165673A (en) * 1995-12-01 2000-12-26 International Business Machines Corporation Resist composition with radiation sensitive acid generator
US5585220A (en) * 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator
US5879856A (en) 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
EP0780732B1 (de) 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymerzusammensetzung und Rezistmaterial
KR19990076735A (ko) 1996-01-26 1999-10-15 나카노 카쯔히코 레지스트 조성물
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
JP3804138B2 (ja) 1996-02-09 2006-08-02 Jsr株式会社 ArFエキシマレーザー照射用感放射線性樹脂組成物
EP0789279B2 (de) 1996-02-09 2004-12-08 Wako Pure Chemical Industries Ltd Polymer und Resistmaterial
JP3877776B2 (ja) * 1996-03-07 2007-02-07 Azエレクトロニックマテリアルズ株式会社 異常分散により屈折率を変化させた底部反射防止膜
US6232417B1 (en) 1996-03-07 2001-05-15 The B. F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
ATE297562T1 (de) * 1996-03-07 2005-06-15 Sumitomo Bakelite Co Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
TW337591B (en) * 1996-04-15 1998-08-01 Shinetsu Chem Ind Co Anti-reflection coating material
KR0183901B1 (ko) * 1996-07-03 1999-04-01 삼성전자 주식회사 레지스트 조성물
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Azエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
US5876899A (en) * 1996-09-18 1999-03-02 Shipley Company, L.L.C. Photoresist compositions
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
JP3297324B2 (ja) * 1996-10-30 2002-07-02 富士通株式会社 レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
KR100220951B1 (ko) * 1996-12-20 1999-09-15 김영환 비닐 4-테트라히드로피라닐옥시벤잘-비닐 4-히드록시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체, 비닐 4-테트라히드로피라닐옥시벤잘-비닐 테트라히드로피라닐에테르-비닐 아세테이트 공중합체 및 그들의 제조방법
KR100211548B1 (ko) * 1996-12-20 1999-08-02 김영환 원자외선용 감광막 공중합체 및 그 제조방법
KR100197673B1 (en) 1996-12-20 1999-06-15 Hyundai Electronics Ind Copolymers containing n-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
KR100225956B1 (ko) * 1997-01-10 1999-10-15 김영환 아민을 도입한 에이알에프 감광막 수지
US6103445A (en) * 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
US6117345A (en) * 1997-04-02 2000-09-12 United Microelectronics Corp. High density plasma chemical vapor deposition process
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
US5958654A (en) * 1997-08-25 1999-09-28 Lucent Technologies Inc. Lithographic process and energy-sensitive material for use therein
US7026093B2 (en) * 1997-08-28 2006-04-11 Shipley Company, L.L.C. Photoresist compositions
US6077643A (en) * 1997-08-28 2000-06-20 Shipley Company, L.L.C. Polymers and photoresist compositions
US7482107B2 (en) * 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
KR19990036901A (ko) 1997-10-08 1999-05-25 카나가와 치히로 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
US6136502A (en) * 1997-10-08 2000-10-24 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
KR100252546B1 (ko) * 1997-11-01 2000-04-15 김영환 공중합체 수지와 포토레지스트 및 그 제조방법
KR100254472B1 (ko) * 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
KR100354871B1 (ko) 1997-12-31 2003-03-10 주식회사 하이닉스반도체 공중합체수지와그제조방법및이수지를이용한포토레지스트
KR100313150B1 (ko) * 1997-12-31 2001-12-28 박종섭 리소콜릴에시딜(메타)아크릴레이트 단량체와 그를 도입한 공중합체 수지 및 이 수지를 이용한 포토레지스트
US6165674A (en) * 1998-01-15 2000-12-26 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
US6190839B1 (en) 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
AU3303599A (en) 1998-02-23 1999-09-06 B.F. Goodrich Company, The Polycyclic resist compositions with increased etch resistance
US6303263B1 (en) 1998-02-25 2001-10-16 International Business Machines Machines Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups
US6103447A (en) * 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
US6146806A (en) 1998-04-06 2000-11-14 Nec Corporation Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
EP1225478B1 (de) 1998-04-06 2012-12-19 FUJIFILM Corporation Lichtempfindliche Harzzusammensetzung
KR100252062B1 (ko) * 1998-04-20 2000-06-01 윤종용 포토레지스트용 중합체 혼합물, 이를 포함하는포토레지스트 조성물 및 이의 제조방법
KR100252061B1 (ko) * 1998-04-20 2000-06-01 윤종용 포토레지스트용 중합체, 이를 포함하는 포토레지스트 조성물 및이의 제조방법
US6074800A (en) * 1998-04-23 2000-06-13 International Business Machines Corporation Photo acid generator compounds, photo resists, and method for improving bias
EP0957399B1 (de) * 1998-04-24 2004-02-18 Infineon Technologies AG Strahlungsempfindliches Gemisch und dessen Verwendung
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR19990081722A (ko) 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
US6759483B2 (en) * 1998-05-05 2004-07-06 Chemfirst Electronic Materials L.P. Preparation of homo-, co- and terpolymers of substituted styrenes
KR100261224B1 (ko) 1998-05-07 2000-09-01 윤종용 실리콘을 함유하는 폴리머 및 이를 포함하는 화학증폭형 레지스트 조성물
TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
TWI232855B (en) * 1998-05-19 2005-05-21 Jsr Corp Diazodisulfone compound and radiation-sensitive resin composition
KR100287175B1 (ko) * 1998-05-20 2001-09-22 윤종용 화학 증폭형 포토레지스트의 용해 억제제 및 이를 포함하는 화학증폭형 포토레지스트 조성물
JP3175697B2 (ja) * 1998-06-18 2001-06-11 日本電気株式会社 化学増幅系フォトレジスト
TW444027B (en) 1998-06-30 2001-07-01 Ind Tech Res Inst Ring-opened polymer prepared from pericyclic olefin and photosensitive composition containing the polymer
US6103456A (en) * 1998-07-22 2000-08-15 Siemens Aktiengesellschaft Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication
KR100403325B1 (ko) 1998-07-27 2004-03-24 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한포토레지스트조성물
US6093517A (en) * 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
US6127089A (en) * 1998-08-28 2000-10-03 Advanced Micro Devices, Inc. Interconnect structure with low k dielectric materials and method of making the same with single and dual damascene techniques
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
JP3120402B2 (ja) 1998-09-03 2000-12-25 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 不活性化芳香族アミン化合物を含むフォトレジスト組成物
KR100504644B1 (ko) * 1998-10-29 2005-08-04 신에쓰 가가꾸 고교 가부시끼가이샤 포지형 레지스트 재료
WO2000026973A1 (en) 1998-11-02 2000-05-11 Presstek, Inc. Transparent conductive oxides for plastic flat panel displays
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6770413B1 (en) 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
JP3680920B2 (ja) 1999-02-25 2005-08-10 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
KR100314761B1 (ko) 1999-03-03 2001-11-17 윤덕용 노르보르넨에 콜릭산, 디옥시콜릭산 또는 리소콜릭산 유도체를 결합시킨 단량체를 이용한 중합체 및 이를 함유하는 포토레지스트 조성물
TWI263861B (en) 1999-03-26 2006-10-11 Shinetsu Chemical Co Resist material and pattern forming method
US6414101B1 (en) 1999-03-26 2002-07-02 Shin-Etsu Chemical Co., Ltd. Dendritic polymers and making method
KR100320773B1 (ko) 1999-05-31 2002-01-17 윤종용 포토레지스트 조성물
US6187506B1 (en) 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6461789B1 (en) 1999-08-25 2002-10-08 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
US6436606B1 (en) 1999-08-30 2002-08-20 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6638684B2 (en) 1999-08-31 2003-10-28 Tokyo Ohka Kogyo Co., Ltd. Photosensitive laminate, process for forming resist pattern using same and positive resist composition
KR100308423B1 (ko) 1999-09-07 2001-09-26 주식회사 동진쎄미켐 화학 증폭 레지스트용 폴리머 및 이를 이용한 레지스트 조성물
TW527363B (en) 1999-09-08 2003-04-11 Shinetsu Chemical Co Polymers, chemical amplification resist compositions and patterning process
KR100653302B1 (ko) 1999-09-08 2006-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 스티렌 유도체
JP3969909B2 (ja) 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
KR100549160B1 (ko) 1999-10-13 2006-02-03 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
TW487698B (en) 1999-10-13 2002-05-21 Shinetsu Chemical Co Styrene derivatives
TWI269940B (en) 1999-10-29 2007-01-01 Shinetsu Chemical Co Resist composition
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US6365322B1 (en) 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
JP3963624B2 (ja) 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6509138B2 (en) 2000-01-12 2003-01-21 Semiconductor Research Corporation Solventless, resistless direct dielectric patterning
TWI225184B (en) * 2000-01-17 2004-12-11 Shinetsu Chemical Co Chemical amplification type resist composition
US6623907B2 (en) 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
KR100592010B1 (ko) 2000-02-16 2006-06-22 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 화학 증폭 레지스트 재료 및 패턴 형성 방법
US6579658B2 (en) 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
DE10008840A1 (de) 2000-02-25 2001-09-06 Beiersdorf Ag Strukturierte UV-vernetzte Acrylathaftklebemassen
DE10008843A1 (de) 2000-02-25 2001-09-06 Beiersdorf Ag Polare Acrylathaftklebemassen
US6783914B1 (en) 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
JP4806486B2 (ja) * 2000-02-28 2011-11-02 日東電工株式会社 紫外線架橋型粘着剤組成物とその製造方法ならびに粘着シ―トとその製造方法
US6538086B1 (en) 2000-02-28 2003-03-25 Industrial Technology Research Institute Polymer with a pericyclic protective group and resist composition containing the same
KR100674073B1 (ko) 2000-03-07 2007-01-26 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 재료
TW538312B (en) 2000-03-07 2003-06-21 Shinetsu Chemical Co Chemical amplification, positive resist compositions
KR100616399B1 (ko) 2000-03-09 2006-08-29 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭형 레지스트 재료
US7122288B2 (en) 2000-03-28 2006-10-17 Fujitsu Limited Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device
CA2406307A1 (en) 2000-04-17 2001-10-25 Yale University Method for measuring diffusion of photogenerated catalyst in chemically amplified resists
EP1148044B1 (de) * 2000-04-20 2004-01-07 Shin-Etsu Chemical Co., Ltd. Esterverbindungen, Polymere, Photoresistcompositionen und Mustererzeugungsverfahren
US6692883B2 (en) 2000-04-21 2004-02-17 Fuji Photo Film Co., Ltd. Positive photoresist composition
US6878501B2 (en) 2000-04-27 2005-04-12 Shin-Etsu Chemical Co., Ltd. Polymer, chemically amplified resist composition and patterning process
JP4768103B2 (ja) * 2000-06-06 2011-09-07 日東電工株式会社 粘着剤組成物とその粘着シ―ト類およびこれらの製造方法
JP4576737B2 (ja) 2000-06-09 2010-11-10 Jsr株式会社 感放射線性樹脂組成物
US7060419B2 (en) * 2000-06-15 2006-06-13 3M Innovative Properties Company Process for producing microfluidic articles
US6852766B1 (en) * 2000-06-15 2005-02-08 3M Innovative Properties Company Multiphoton photosensitization system
US7026103B2 (en) * 2000-06-15 2006-04-11 3M Innovative Properties Company Multicolor imaging using multiphoton photochemical processes
JP4786858B2 (ja) * 2000-06-15 2011-10-05 スリーエム イノベイティブ プロパティズ カンパニー 封入光学素子を提供するための多光子硬化
US7790353B2 (en) * 2000-06-15 2010-09-07 3M Innovative Properties Company Multidirectional photoreactive absorption method
DE60139620D1 (de) * 2000-06-15 2009-10-01 3M Innovative Properties Co Methode und gerät zur erzielung wiederholter multiphotonabsorption
ATE309553T1 (de) * 2000-06-15 2005-11-15 3M Innovative Properties Co Mikroherstellungsverfahren für organische optische bauteile
US7118845B2 (en) * 2000-06-15 2006-10-10 3M Innovative Properties Company Multiphoton photochemical process and articles preparable thereby
US7265161B2 (en) * 2002-10-02 2007-09-04 3M Innovative Properties Company Multi-photon reactive compositions with inorganic particles and method for fabricating structures
US6593431B2 (en) 2000-06-27 2003-07-15 Chemfirst Electronic Materials Lp Purification means
US6787611B2 (en) * 2000-06-27 2004-09-07 Chemfirst Electronic Materials L.P. Purification means
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
JP3712047B2 (ja) 2000-08-14 2005-11-02 信越化学工業株式会社 レジスト材料及びパターン形成方法
TW565747B (en) 2000-09-07 2003-12-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TW594410B (en) 2000-09-07 2004-06-21 Shinetsu Chemical Co Resist compositions and patterning process
TW588221B (en) 2000-09-07 2004-05-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
EP1204001B1 (de) 2000-11-01 2013-09-11 Shin-Etsu Chemical Co., Ltd. Resistzusammensetzung und Mustererzeugungsverfahren
KR100670090B1 (ko) 2000-11-29 2007-01-17 신에쓰 가가꾸 고교 가부시끼가이샤 아민 화합물, 레지스트 재료 및 패턴 형성 방법
JP4768115B2 (ja) * 2000-12-01 2011-09-07 日東電工株式会社 紫外線架橋型粘着剤組成物とその製造方法ならびに粘着シ―トとその製造方法
WO2002046507A2 (en) 2000-12-04 2002-06-13 Ciba Specialty Chemicals Holding Inc. Onium salts and the use therof as latent acids
KR20020045566A (ko) 2000-12-07 2002-06-19 카나가와 치히로 고분자 화합물의 제조 방법 및 이 고분자 화합물을 사용한레지스트 재료
US6743564B2 (en) 2000-12-07 2004-06-01 Shin-Etsu Chemical Co., Ltd. Amine compounds, resist compositions and patterning process
US7261992B2 (en) 2000-12-21 2007-08-28 International Business Machines Corporation Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
JP4697827B2 (ja) * 2001-01-30 2011-06-08 三菱レイヨン株式会社 化学増幅型レジスト用樹脂の精製方法および化学増幅型レジスト用樹脂
JP3962893B2 (ja) 2001-02-09 2007-08-22 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6602351B2 (en) 2001-02-15 2003-08-05 Micell Technologies, Inc. Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures
US6562146B1 (en) 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
US6905555B2 (en) 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
US6596093B2 (en) 2001-02-15 2003-07-22 Micell Technologies, Inc. Methods for cleaning microelectronic structures with cyclical phase modulation
US6613157B2 (en) 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6641678B2 (en) 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
TWI300790B (en) 2001-02-28 2008-09-11 Shinetsu Chemical Co Polymers, Resist Compositions and Patterning Process
TWI245774B (en) 2001-03-01 2005-12-21 Shinetsu Chemical Co Silicon-containing polymer, resist composition and patterning process
JP2002278053A (ja) 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
KR100749494B1 (ko) 2001-04-03 2007-08-14 삼성에스디아이 주식회사 화학증폭형 네가티브 포토레지스트용 중합체 및 포토레지스트 조성물
KR20030076225A (ko) 2001-04-04 2003-09-26 아치 스페셜티 케미칼즈, 인코포레이티드 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물
TW588032B (en) * 2001-04-23 2004-05-21 Shinetsu Chemical Co New tertiary amine compound having ester structure and method for producing the same
JP3988517B2 (ja) * 2001-04-27 2007-10-10 Jsr株式会社 感放射線性樹脂組成物
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
US6686429B2 (en) 2001-05-11 2004-02-03 Clariant Finance (Bvi) Limited Polymer suitable for photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
JP3891257B2 (ja) 2001-06-25 2007-03-14 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI245043B (en) 2001-06-25 2005-12-11 Shinetsu Chemical Co Novel ester compounds
TW574607B (en) 2001-06-25 2004-02-01 Shinetsu Chemical Co Polymers, resist compositions and patterning process
TW584786B (en) 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
DE10131489B4 (de) * 2001-06-29 2007-04-12 Infineon Technologies Ag Negativ Resistprozess mit simultaner Entwicklung und chemischer Nachverstärkung von Resiststrukturen
DE10131488B4 (de) * 2001-06-29 2006-01-19 Infineon Technologies Ag Verfahren zur chemischen Nachverstärkung von Photoresists im UV-Bereich
DE10131667B4 (de) * 2001-06-29 2007-05-31 Infineon Technologies Ag Negativ Resistprozess mit simultaner Entwicklung und Silylierung
DE10131487B4 (de) * 2001-06-29 2005-11-24 Infineon Technologies Ag Negativer Resistprozess mit simultaner Entwicklung und Aromatisierung von Resiststrukturen
DE10142590A1 (de) * 2001-08-31 2003-04-03 Infineon Technologies Ag Verfahren zur Seitenwandverstärkung von Resiststrukturen und zur Herstellung von Strukturen mit reduzierter Strukturgröße
US6673514B2 (en) 2001-09-07 2004-01-06 Kodak Polychrome Graphics Llc Imagable articles and compositions, and their use
TW574614B (en) * 2001-09-27 2004-02-01 Shinetsu Chemical Co Chemically amplified resist compositions and patterning process
JP2003107707A (ja) * 2001-09-28 2003-04-09 Clariant (Japan) Kk 化学増幅型ポジ型感放射線性樹脂組成物
DE10147953B4 (de) 2001-09-28 2007-06-06 Infineon Technologies Ag CARL für Bioelektronik: Substratanbindung über isolierende Schicht
JP3821217B2 (ja) * 2001-10-30 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
DE10153497B4 (de) * 2001-10-31 2006-04-06 Infineon Technologies Ag Verfahren zur Silylierung von Fotoresists im UV-Bereich
DE10153496B4 (de) * 2001-10-31 2007-01-04 Infineon Technologies Ag Verfahren zur Aromatisierung und Cycloaliphatisierung von Fotoresists im UV-Bereich
JP3890365B2 (ja) 2001-11-01 2007-03-07 富士フイルム株式会社 ポジ型レジスト組成物
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP3901997B2 (ja) * 2001-11-27 2007-04-04 富士通株式会社 レジスト材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP4522628B2 (ja) 2001-11-28 2010-08-11 信越化学工業株式会社 新規なエステル化合物
US6949609B2 (en) * 2001-12-12 2005-09-27 Sumitomo Bakelite Co., Ltd. Polymeric compositions and uses therefor
JP3874092B2 (ja) * 2001-12-26 2007-01-31 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6750266B2 (en) * 2001-12-28 2004-06-15 3M Innovative Properties Company Multiphoton photosensitization system
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6800416B2 (en) 2002-01-09 2004-10-05 Clariant Finance (Bvi) Ltd. Negative deep ultraviolet photoresist
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
JP3877605B2 (ja) * 2002-02-08 2007-02-07 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
AU2003219824A1 (en) * 2002-02-21 2003-09-09 Honeywell International Inc. Fluorinated molecules and methods of making and using same
TW200304042A (en) 2002-02-22 2003-09-16 Jsr Corp Radiation-sensitive resin composition
DE10208786B4 (de) * 2002-02-28 2006-02-09 Infineon Technologies Ag Verfahren zur Modifikation von Resiststrukturen und Resistschichten aus wässriger Phase
KR100679060B1 (ko) * 2002-03-25 2007-02-05 신에쓰 가가꾸 고교 가부시끼가이샤 중합체, 레지스트 조성물 및 패턴 형성 방법
KR100678991B1 (ko) * 2002-03-25 2007-02-05 신에쓰 가가꾸 고교 가부시끼가이샤 신규 에스테르, 중합체, 레지스트 조성물 및 패턴 형성 방법
TWI304412B (en) * 2002-03-26 2008-12-21 Shinetsu Chemical Co Polymers, resist compositions andpatterning process
US20030190818A1 (en) * 2002-04-03 2003-10-09 Ruben Carbonell Enhanced processing of performance films using high-diffusivity penetrants
US6866983B2 (en) * 2002-04-05 2005-03-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP3856122B2 (ja) * 2002-04-05 2006-12-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6864324B2 (en) 2002-04-19 2005-03-08 Chem First Electronic Materials L.P. Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity
US7232638B2 (en) * 2002-05-02 2007-06-19 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US20040126695A1 (en) * 2002-05-07 2004-07-01 Honeywell International, Inc. Fluorinated polymers
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
JP4139948B2 (ja) 2002-06-28 2008-08-27 日本電気株式会社 不飽和単量体、重合体、化学増幅レジスト組成物、および、パターン形成方法
US6919161B2 (en) * 2002-07-02 2005-07-19 Shin-Etsu Chemical Co., Ltd. Silicon-containing polymer, resist composition and patterning process
JP3912512B2 (ja) * 2002-07-02 2007-05-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP3844069B2 (ja) * 2002-07-04 2006-11-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2004043732A (ja) * 2002-07-15 2004-02-12 Three M Innovative Properties Co 発泡性接着剤組成物
JP2004059844A (ja) * 2002-07-31 2004-02-26 Central Glass Co Ltd 含フッ素高分子化合物
JP3912516B2 (ja) * 2002-08-09 2007-05-09 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US20040067435A1 (en) 2002-09-17 2004-04-08 Fuji Photo Film Co., Ltd. Image forming material
JP4371206B2 (ja) 2002-09-30 2009-11-25 信越化学工業株式会社 エステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
US7232650B2 (en) * 2002-10-02 2007-06-19 3M Innovative Properties Company Planar inorganic device
JP3900276B2 (ja) * 2002-10-25 2007-04-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
EP1557718A4 (de) 2002-10-29 2008-01-09 Jsr Corp Strahlungsempfindliche harzzusammensetzung
US20040091813A1 (en) * 2002-11-05 2004-05-13 Honeywell International Inc. Fluorinated polymers
US7264913B2 (en) * 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7217492B2 (en) 2002-12-25 2007-05-15 Jsr Corporation Onium salt compound and radiation-sensitive resin composition
TWI252374B (en) * 2003-01-30 2006-04-01 Shinetsu Chemical Co Polymer, resist composition and patterning process
JP4133399B2 (ja) * 2003-02-10 2008-08-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4222850B2 (ja) * 2003-02-10 2009-02-12 Spansion Japan株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
JP4240202B2 (ja) * 2003-02-10 2009-03-18 信越化学工業株式会社 スルホン酸エステル基を有する高分子化合物、レジスト材料及びパターン形成方法
TWI344578B (en) * 2003-02-20 2011-07-01 Promerus Llc Dissolution rate modifiers for photoresist compositions
TWI349831B (en) 2003-02-20 2011-10-01 Maruzen Petrochem Co Ltd Resist polymer and method for producing the polymer
US20040166434A1 (en) * 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
TWI344966B (en) 2003-03-10 2011-07-11 Maruzen Petrochem Co Ltd Novel thiol compound, copolymer and method for producing the copolymer
US20050003188A1 (en) * 2003-03-21 2005-01-06 The Regents Of The University Of California Thermolytic synthesis of inorganic oxides imprinted with functional moieties
JP4068006B2 (ja) * 2003-05-07 2008-03-26 信越化学工業株式会社 サーマルフロー工程を用いた微細なコンタクトホール形成方法
US7834113B2 (en) * 2003-05-08 2010-11-16 E. I. Du Pont De Nemours And Company Photoresist compositions and processes for preparing the same
JP4081677B2 (ja) 2003-05-21 2008-04-30 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4009852B2 (ja) 2003-05-21 2007-11-21 信越化学工業株式会社 塩基性化合物、レジスト材料及びパターン形成方法
JP4029288B2 (ja) 2003-05-21 2008-01-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP3981830B2 (ja) * 2003-05-26 2007-09-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2004354417A (ja) * 2003-05-27 2004-12-16 Shin Etsu Chem Co Ltd ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4114064B2 (ja) * 2003-05-27 2008-07-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP4360844B2 (ja) * 2003-06-16 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物
JP4088784B2 (ja) * 2003-06-19 2008-05-21 信越化学工業株式会社 高分子化合物の製造方法及びレジスト材料
US7090963B2 (en) * 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
JP4085034B2 (ja) * 2003-07-17 2008-04-30 信越化学工業株式会社 化合物、高分子化合物、レジスト材料及びパターン形成方法
EP1647570A4 (de) * 2003-07-18 2006-07-12 Oji Paper Co Flächiges geschäumtes produkt und herstellungsverfahren dafür
KR100527411B1 (ko) * 2003-08-23 2005-11-09 한국과학기술원 신규한 옥세판-2-온 구조를 함유하는 단량체, 이들의중합체를 함유하는 포토레지스트 조성물 및 그 제조방법과포토레지스트 패턴의 형성 방법
JP4013063B2 (ja) * 2003-08-26 2007-11-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7166418B2 (en) * 2003-09-03 2007-01-23 Matsushita Electric Industrial Co., Ltd. Sulfonamide compound, polymer compound, resist material and pattern formation method
JP2005099683A (ja) * 2003-09-05 2005-04-14 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物及びこれを用いたレジストパターンの形成方法
US7060775B2 (en) * 2003-10-02 2006-06-13 Matsushita Electronic Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
US7169530B2 (en) * 2003-10-02 2007-01-30 Matsushita Electric Industrial Co., Ltd. Polymer compound, resist material and pattern formation method
US7232641B2 (en) * 2003-10-08 2007-06-19 Shin-Etsu Chemical Co., Ltd. Polymerizable compound, polymer, positive-resist composition, and patterning process using the same
JP4235810B2 (ja) * 2003-10-23 2009-03-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI286555B (en) * 2003-10-23 2007-09-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP4355917B2 (ja) * 2003-10-29 2009-11-04 信越化学工業株式会社 含窒素有機化合物、レジスト材料及びパターン形成方法
JP3759526B2 (ja) 2003-10-30 2006-03-29 丸善石油化学株式会社 半導体リソグラフィー用共重合体の製造方法
US7276324B2 (en) * 2003-11-14 2007-10-02 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing organic compound, resist composition and patterning process
US20050124712A1 (en) * 2003-12-05 2005-06-09 3M Innovative Properties Company Process for producing photonic crystals
JP4430622B2 (ja) * 2003-12-05 2010-03-10 スリーエム イノベイティブ プロパティズ カンパニー フォトニック結晶の製造方法
US7189491B2 (en) * 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP4525912B2 (ja) * 2004-01-30 2010-08-18 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2005220274A (ja) * 2004-02-09 2005-08-18 Shin Etsu Chem Co Ltd 高分子化合物、レジスト材料及びパターン形成方法
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4199687B2 (ja) 2004-03-17 2008-12-17 富士フイルム株式会社 平版印刷版原版
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7081511B2 (en) * 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
US7060416B2 (en) * 2004-04-08 2006-06-13 Eastman Kodak Company Positive-working, thermally sensitive imageable element
TWI335492B (en) * 2004-04-09 2011-01-01 Shinetsu Chemical Co Positive resist composition and patterning process
US7255973B2 (en) * 2004-04-09 2007-08-14 Shin-Etsu Chemical Co., Ltd. Positive resist compositions and patterning process
JP4557159B2 (ja) * 2004-04-15 2010-10-06 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びこれを用いたパターン形成方法
JP4502115B2 (ja) * 2004-04-23 2010-07-14 信越化学工業株式会社 含窒素有機化合物、化学増幅型レジスト材料及びパターン形成方法
KR100960838B1 (ko) * 2004-04-27 2010-06-07 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
JP4360264B2 (ja) * 2004-04-30 2009-11-11 Jsr株式会社 ポジ型感放射線性樹脂組成物
JP3978215B2 (ja) * 2004-05-25 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
JP3978216B2 (ja) * 2004-05-27 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
JP3978217B2 (ja) * 2004-05-27 2007-09-19 松下電器産業株式会社 レジスト材料及びパターン形成方法
JP2005344009A (ja) * 2004-06-03 2005-12-15 Shin Etsu Chem Co Ltd レジスト材料用高分子化合物及びその製造方法並びに化学増幅ポジ型レジスト材料
JP4606136B2 (ja) * 2004-06-09 2011-01-05 富士通株式会社 多層体、レジストパターン形成方法、微細加工パターンを有する装置の製造方法および電子装置
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
JP2006021396A (ja) 2004-07-07 2006-01-26 Fuji Photo Film Co Ltd 平版印刷版原版および平版印刷方法
EP1619023B1 (de) 2004-07-20 2008-06-11 FUJIFILM Corporation Bilderzeugendes Material
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
US7507521B2 (en) * 2004-08-09 2009-03-24 Intel Corporation Silicon based optically degraded arc for lithographic patterning
US20060057501A1 (en) * 2004-09-15 2006-03-16 Hengpeng Wu Antireflective compositions for photoresists
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP4368282B2 (ja) 2004-09-24 2009-11-18 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4404734B2 (ja) 2004-09-27 2010-01-27 富士フイルム株式会社 平版印刷版原版
JP4544085B2 (ja) * 2004-09-28 2010-09-15 Jsr株式会社 ポジ型感放射線性樹脂組成物
US7687225B2 (en) * 2004-09-29 2010-03-30 Intel Corporation Optical coatings
JP4431888B2 (ja) * 2004-10-28 2010-03-17 信越化学工業株式会社 含フッ素重合性化合物、その製造方法、この化合物から得られる高分子化合物、レジスト材料及びこれを用いたパターン形成方法
US7537879B2 (en) 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
WO2006059555A1 (ja) 2004-12-03 2006-06-08 Jsr Corporation 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトレジスト組成物
US20060150846A1 (en) 2004-12-13 2006-07-13 Fuji Photo Film Co. Ltd Lithographic printing method
JP2006181838A (ja) 2004-12-27 2006-07-13 Fuji Photo Film Co Ltd 平版印刷版原版
US20070299176A1 (en) * 2005-01-28 2007-12-27 Markley Thomas J Photodefinable low dielectric constant material and method for making and using same
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
JP4506968B2 (ja) * 2005-02-04 2010-07-21 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
EP1691238A3 (de) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JP4474296B2 (ja) 2005-02-09 2010-06-02 富士フイルム株式会社 平版印刷版原版
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
JP2006225476A (ja) * 2005-02-16 2006-08-31 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
US7541131B2 (en) * 2005-02-18 2009-06-02 Fujifilm Corporation Resist composition, compound for use in the resist composition and pattern forming method using the resist composition
US20060188812A1 (en) * 2005-02-21 2006-08-24 Tomoki Nagai Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition
US7255056B2 (en) * 2005-03-04 2007-08-14 Lockheed Martin Corporation Stable, high-speed marine vessel
JP4595606B2 (ja) * 2005-03-17 2010-12-08 Jsr株式会社 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
JP4404792B2 (ja) 2005-03-22 2010-01-27 富士フイルム株式会社 平版印刷版原版
JP4810862B2 (ja) * 2005-04-11 2011-11-09 Jsr株式会社 オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
JP4770244B2 (ja) * 2005-04-11 2011-09-14 Jsr株式会社 オニウム塩、それを用いた感放射線性酸発生剤及びポジ型感放射線性樹脂組成物
JP4731200B2 (ja) 2005-05-10 2011-07-20 丸善石油化学株式会社 半導体リソグラフィー用共重合体の製造方法
JP2006328003A (ja) * 2005-05-27 2006-12-07 Shin Etsu Chem Co Ltd 新規な重合性エステル化合物
JP4687878B2 (ja) * 2005-05-27 2011-05-25 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
JP4815270B2 (ja) 2005-08-18 2011-11-16 富士フイルム株式会社 平版印刷版の作製方法及び作製装置
JP4759343B2 (ja) 2005-08-19 2011-08-31 富士フイルム株式会社 平版印刷版原版および平版印刷方法
EP1762895B1 (de) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
US20070065756A1 (en) * 2005-09-16 2007-03-22 Quantiscript Inc., Universite De Sherbrooke High sensitivity electron beam resist processing
JP4697443B2 (ja) * 2005-09-21 2011-06-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
WO2007047379A2 (en) * 2005-10-12 2007-04-26 Sundance Enterprises Fluidized positioning and protection system
JP4671035B2 (ja) * 2005-10-14 2011-04-13 信越化学工業株式会社 化学増幅型レジスト材料及びパターン形成方法
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
JP4488230B2 (ja) * 2005-10-31 2010-06-23 信越化学工業株式会社 レジスト用重合体、レジスト材料及びパターン形成方法
JP4582331B2 (ja) * 2005-11-08 2010-11-17 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7629106B2 (en) * 2005-11-16 2009-12-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4614089B2 (ja) * 2005-11-17 2011-01-19 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
TWI512402B (zh) 2005-11-25 2015-12-11 Jsr Corp Sensitive radiation linear resin composition
JP4831307B2 (ja) 2005-12-02 2011-12-07 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料及びパターン形成方法
US7583444B1 (en) * 2005-12-21 2009-09-01 3M Innovative Properties Company Process for making microlens arrays and masterforms
JP4880701B2 (ja) 2005-12-21 2012-02-22 スリーエム イノベイティブ プロパティズ カンパニー 多光子硬化反応性組成物を処理するための方法及び装置
EP1829942B1 (de) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
KR100994873B1 (ko) * 2006-03-06 2010-11-16 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물 및 포지티브형 레지스트 재료 및 이를이용한 패턴 형성 방법
JP5100115B2 (ja) * 2006-03-16 2012-12-19 東洋合成工業株式会社 スルホニウム塩及び酸発生剤
EP1998844A4 (de) * 2006-03-24 2017-03-01 3M Innovative Properties Company Verfahren zur herstellung von mikronadeln, mikronadelanordnung, vorlage und replikationswerkzeug
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
US7300741B2 (en) * 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution
JP5030474B2 (ja) 2006-05-18 2012-09-19 丸善石油化学株式会社 半導体リソグラフィー用樹脂組成物
EP2468487B1 (de) 2006-05-18 2017-07-12 3M Innovative Properties Company Strukturen zur Lichtauskopplung und diese enthaltende Lichtleiter
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US20070298349A1 (en) * 2006-06-22 2007-12-27 Ruzhi Zhang Antireflective Coating Compositions Comprising Siloxane Polymer
JP4784753B2 (ja) * 2006-07-06 2011-10-05 信越化学工業株式会社 重合性エステル化合物、重合体、レジスト材料及びパターン形成方法
TWI370139B (en) * 2006-07-06 2012-08-11 Shinetsu Chemical Co Ester compounds and their preparation, polymers, resist compositions and patterning process
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US7416834B2 (en) 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP5183903B2 (ja) * 2006-10-13 2013-04-17 信越化学工業株式会社 高分子化合物、レジスト材料及びこれを用いたパターン形成方法
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
JP4784760B2 (ja) * 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2008106084A (ja) * 2006-10-23 2008-05-08 Maruzen Petrochem Co Ltd 半導体リソグラフィー用共重合体、組成物並びに該共重合体の製造方法
JP4803377B2 (ja) * 2006-10-25 2011-10-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4355011B2 (ja) * 2006-11-07 2009-10-28 丸善石油化学株式会社 液浸リソグラフィー用共重合体及び組成物
JP5410093B2 (ja) 2006-11-10 2014-02-05 Jsr株式会社 重合性スルホン酸オニウム塩の製造方法
TWI416253B (zh) 2006-11-10 2013-11-21 Jsr Corp 敏輻射線性樹脂組成物
JP5588095B2 (ja) * 2006-12-06 2014-09-10 丸善石油化学株式会社 半導体リソグラフィー用共重合体とその製造方法
TW200836002A (en) * 2006-12-19 2008-09-01 Cheil Ind Inc Photosensitive resin composition and organic insulating film produced using the same
US8030419B2 (en) 2006-12-22 2011-10-04 Maruzen Petrochemical Co., Ltd. Process for producing polymer for semiconductor lithography
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP5277203B2 (ja) * 2006-12-25 2013-08-28 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US7875408B2 (en) 2007-01-25 2011-01-25 International Business Machines Corporation Bleachable materials for lithography
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
US8026040B2 (en) * 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
US7736837B2 (en) * 2007-02-20 2010-06-15 Az Electronic Materials Usa Corp. Antireflective coating composition based on silicon polymer
JP2010519362A (ja) * 2007-02-26 2010-06-03 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション シロキサンポリマーの製造方法
US8524441B2 (en) 2007-02-27 2013-09-03 Az Electronic Materials Usa Corp. Silicon-based antireflective coating compositions
JP2008208266A (ja) 2007-02-27 2008-09-11 Fujifilm Corp インク組成物、インクジェット記録方法、印刷物、平版印刷版の製造方法、および平版印刷版
JP5060986B2 (ja) * 2007-02-27 2012-10-31 富士フイルム株式会社 ポジ型レジスト組成物及びパターン形成方法
WO2008114411A1 (ja) * 2007-03-20 2008-09-25 Fujitsu Limited 導電性反射防止膜形成用材料、導電性反射防止膜の形成方法、レジストパターン形成方法、半導体装置、及び磁気ヘッド
JP2008233660A (ja) 2007-03-22 2008-10-02 Fujifilm Corp 浸漬型平版印刷版用自動現像装置およびその方法
ATE471812T1 (de) 2007-03-23 2010-07-15 Fujifilm Corp Negativ-lithografiedruckplattenvorläufer und lithografiedruckverfahren damit
JP4860525B2 (ja) 2007-03-27 2012-01-25 富士フイルム株式会社 硬化性組成物及び平版印刷版原版
US8182975B2 (en) * 2007-03-28 2012-05-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP5030638B2 (ja) 2007-03-29 2012-09-19 富士フイルム株式会社 カラーフィルタ及びその製造方法
EP1974914B1 (de) 2007-03-29 2014-02-26 FUJIFILM Corporation Verfahren zur Herstellung einer Lithographiedruckplatte
EP1975702B1 (de) 2007-03-29 2013-07-24 FUJIFILM Corporation Farbige lichthärtbare Zusammensetzung für eine Festkörperbildaufnahmevorrichtung, Farbfilter und Verfahren zur Herstellung davon, sowie Festkörperbildaufnahmevorrichtung
EP1975706A3 (de) 2007-03-30 2010-03-03 FUJIFILM Corporation Lithografiedruckplattenvorläufer
JP5159141B2 (ja) 2007-03-30 2013-03-06 富士フイルム株式会社 インク組成物、インクジェット記録方法、印刷物、平版印刷版の作製方法及び平版印刷版
US7498116B2 (en) * 2007-03-30 2009-03-03 Fujifilm Corporation Resist composition and pattern formation method using the same
EP1975710B1 (de) 2007-03-30 2013-10-23 FUJIFILM Corporation Plattenherstellungsverfahren eines Lithografiedruckplattenvorläufers
JP5337398B2 (ja) 2007-04-06 2013-11-06 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. コーティング組成物
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
KR100990106B1 (ko) 2007-04-13 2010-10-29 후지필름 가부시키가이샤 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US20080264672A1 (en) * 2007-04-26 2008-10-30 Air Products And Chemicals, Inc. Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same
US7985534B2 (en) * 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US20080284039A1 (en) * 2007-05-18 2008-11-20 International Business Machines Corporation Interconnect structures with ternary patterned features generated from two lithographic processes
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
JP4590431B2 (ja) 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4783853B2 (ja) * 2007-06-12 2011-09-28 富士フイルム株式会社 ネガ型現像用レジスト組成物を用いたパターン形成方法
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP5376844B2 (ja) 2007-06-21 2013-12-25 富士フイルム株式会社 平版印刷版原版および平版印刷方法
EP2006091B1 (de) 2007-06-22 2010-12-08 FUJIFILM Corporation Lithographiedruckplattenvorläufer und Plattenherstellungsverfahren
JP5213375B2 (ja) 2007-07-13 2013-06-19 富士フイルム株式会社 顔料分散液、硬化性組成物、それを用いるカラーフィルタ及び固体撮像素子
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042148A1 (en) * 2007-08-06 2009-02-12 Munirathna Padmanaban Photoresist Composition for Deep UV and Process Thereof
CN101772735B (zh) * 2007-08-09 2012-09-26 Jsr株式会社 放射线敏感性树脂组合物
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
CN101795840B (zh) * 2007-09-06 2013-08-07 3M创新有限公司 形成模具的方法以及使用所述模具形成制品的方法
WO2009032815A1 (en) * 2007-09-06 2009-03-12 3M Innovative Properties Company Tool for making microstructured articles
WO2009032813A2 (en) * 2007-09-06 2009-03-12 3M Innovative Properties Company Lightguides having light extraction structures providing regional control of light output
JP5089303B2 (ja) * 2007-09-13 2012-12-05 三菱レイヨン株式会社 化学増幅型レジスト用樹脂
JP2009083106A (ja) 2007-09-27 2009-04-23 Fujifilm Corp 平版印刷版用版面保護剤及び平版印刷版の製版方法
JP4890403B2 (ja) 2007-09-27 2012-03-07 富士フイルム株式会社 平版印刷版原版
JP2009085984A (ja) 2007-09-27 2009-04-23 Fujifilm Corp 平版印刷版原版
JP4911469B2 (ja) * 2007-09-28 2012-04-04 富士フイルム株式会社 レジスト組成物及びこれを用いたパターン形成方法
JP5244518B2 (ja) 2007-09-28 2013-07-24 富士フイルム株式会社 平版印刷版原版及び平版印刷版の作製方法
JP5039492B2 (ja) * 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
JP4994175B2 (ja) 2007-09-28 2012-08-08 富士フイルム株式会社 平版印刷版原版、及びそれに用いる共重合体の製造方法
JP4790682B2 (ja) 2007-09-28 2011-10-12 富士フイルム株式会社 平版印刷版原版
JP4951454B2 (ja) 2007-09-28 2012-06-13 富士フイルム株式会社 平版印刷版の作成方法
JP5055077B2 (ja) 2007-09-28 2012-10-24 富士フイルム株式会社 画像形成方法および平版印刷版原版
JP2009098688A (ja) 2007-09-28 2009-05-07 Fujifilm Corp 平版印刷版原版、平版印刷版の作製方法および平版印刷方法
JP5002399B2 (ja) 2007-09-28 2012-08-15 富士フイルム株式会社 平版印刷版原版の処理方法
JP5039493B2 (ja) * 2007-09-28 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物およびこれを用いたパターン形成方法
US8451457B2 (en) * 2007-10-11 2013-05-28 3M Innovative Properties Company Chromatic confocal sensor
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
EP2071400A1 (de) 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JPWO2009063824A1 (ja) 2007-11-14 2011-03-31 富士フイルム株式会社 塗布膜の乾燥方法及び平版印刷版原版の製造方法
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US7858287B2 (en) * 2007-11-30 2010-12-28 Hyogo Prefecture Photosensitive resin, and photosensitive composition
JP2009139852A (ja) 2007-12-10 2009-06-25 Fujifilm Corp 平版印刷版の作製方法及び平版印刷版原版
EP2232531B1 (de) * 2007-12-12 2018-09-19 3M Innovative Properties Company Verfahren zur herstellung von strukturen mit verbesserter kantendefinition
US20090162800A1 (en) * 2007-12-20 2009-06-25 David Abdallah Process for Imaging a Photoresist Coated over an Antireflective Coating
JP5066452B2 (ja) 2008-01-09 2012-11-07 富士フイルム株式会社 平版印刷版用現像処理方法
JP2009186997A (ja) 2008-01-11 2009-08-20 Fujifilm Corp 平版印刷版原版、平版印刷版の作製方法及び平版印刷版方法
JP5155677B2 (ja) 2008-01-22 2013-03-06 富士フイルム株式会社 平版印刷版原版、およびその製版方法
TWI452419B (zh) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
JP2009184188A (ja) 2008-02-05 2009-08-20 Fujifilm Corp 平版印刷版原版および印刷方法
US8605256B2 (en) * 2008-02-26 2013-12-10 3M Innovative Properties Company Multi-photon exposure system
JP5175582B2 (ja) 2008-03-10 2013-04-03 富士フイルム株式会社 平版印刷版の作製方法
JP2009214428A (ja) 2008-03-11 2009-09-24 Fujifilm Corp 平版印刷版原版および平版印刷方法
JP2009229771A (ja) 2008-03-21 2009-10-08 Fujifilm Corp 平版印刷版用自動現像方法
JP4940174B2 (ja) 2008-03-21 2012-05-30 富士フイルム株式会社 平版印刷版用自動現像装置
JP2009236355A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 乾燥方法及び装置
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
JP5164640B2 (ja) 2008-04-02 2013-03-21 富士フイルム株式会社 平版印刷版原版
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
IL196690A0 (en) * 2008-05-29 2011-08-01 Plasan Sasa Ltd Interchangeable door
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP5364444B2 (ja) * 2008-07-15 2013-12-11 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、酸発生剤
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
JP5183380B2 (ja) 2008-09-09 2013-04-17 富士フイルム株式会社 赤外線レーザ用感光性平版印刷版原版
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
JP5591465B2 (ja) 2008-10-30 2014-09-17 丸善石油化学株式会社 濃度が均一な半導体リソグラフィー用共重合体溶液の製造方法
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
JP4753056B2 (ja) * 2008-11-28 2011-08-17 信越化学工業株式会社 アセタール化合物、その製造方法、高分子化合物、レジスト材料及びパターン形成方法
US20100136477A1 (en) 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
EP2216683B1 (de) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Mit einer Antireflexionszusammensetzung und einem Photoresist beschichtete Substrate
JP5746824B2 (ja) 2009-02-08 2015-07-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US20100203450A1 (en) 2009-02-11 2010-08-12 International Business Machines Corporation Photoresist compositions and methods of use
JP5537920B2 (ja) 2009-03-26 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
WO2010117102A1 (ko) 2009-04-09 2010-10-14 서강대학교 산학협력단 콜로이드 입자들을 단결정들로 정렬하는 방법
KR20120012792A (ko) 2009-04-15 2012-02-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 이것에 이용하는 중합체 및 이것에 이용하는 화합물
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
KR101729350B1 (ko) 2009-06-16 2017-04-21 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
CN101930173B (zh) 2009-06-22 2014-05-14 罗门哈斯电子材料有限公司 光致酸产生剂和其光致抗蚀剂
US9057951B2 (en) 2009-08-26 2015-06-16 International Business Machines Corporation Chemically amplified photoresist composition and process for its use
JP5655786B2 (ja) 2009-09-11 2015-01-21 Jsr株式会社 感放射線性組成物
WO2011037005A1 (ja) 2009-09-24 2011-03-31 富士フイルム株式会社 平版印刷版原版
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8551686B2 (en) * 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US9671689B2 (en) 2009-12-10 2017-06-06 Rohm And Haas Electronic Materials Llc Cholate photoacid generators and photoresists comprising same
KR101785429B1 (ko) 2009-12-10 2017-10-16 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토애시드 발생제 및 이를 포함하는 포토레지스트
EP2336826B1 (de) 2009-12-14 2012-10-24 Rohm and Haas Electronic Materials LLC Sulfonyl-Fotosäuregeneratoren und diese Fotosäuregeneratoren enthaltende Fotoresiste
KR101846835B1 (ko) 2009-12-15 2018-04-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 및 그 사용방법
US8815754B2 (en) 2009-12-15 2014-08-26 Rohm And Haas Electronics Materials Llc Photoresists and methods for use thereof
US10295910B2 (en) 2009-12-15 2019-05-21 Rohm And Haas Electronic Materials Llc Photoresists and methods of use thereof
US8821978B2 (en) 2009-12-18 2014-09-02 International Business Machines Corporation Methods of directed self-assembly and layered structures formed therefrom
US8623458B2 (en) 2009-12-18 2014-01-07 International Business Machines Corporation Methods of directed self-assembly, and layered structures formed therefrom
WO2011077993A1 (ja) 2009-12-22 2011-06-30 Jsr株式会社 感放射線性組成物
US8486609B2 (en) 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US9223219B2 (en) * 2010-01-08 2015-12-29 Fujifilm Corporation Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
KR101831685B1 (ko) 2010-01-25 2018-02-23 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 질소-함유 화합물을 포함하는 포토레지스트
US8507192B2 (en) 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US9223209B2 (en) 2010-02-19 2015-12-29 International Business Machines Corporation Sulfonamide-containing photoresist compositions and methods of use
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
EP2383611A3 (de) 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Fotosäureerzeuger und Fotolacke damit
US9261780B2 (en) 2010-05-20 2016-02-16 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
US8445181B2 (en) 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8852848B2 (en) 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
WO2012023374A1 (ja) 2010-08-17 2012-02-23 Jsr株式会社 感放射線性組成物及び新規化合物
KR101881600B1 (ko) 2010-08-19 2018-07-24 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 패턴 형성 방법, 중합체 및 화합물
JP5729114B2 (ja) 2010-08-19 2015-06-03 Jsr株式会社 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
WO2012060827A1 (en) 2010-11-03 2012-05-10 Empire Technology Development Llc Lithography using photoresist with photoinitiator and photoinhibitor
US20120122029A1 (en) 2010-11-11 2012-05-17 Takanori Kudo Underlayer Developable Coating Compositions and Processes Thereof
JP5754444B2 (ja) 2010-11-26 2015-07-29 Jsr株式会社 感放射線性組成物
JP5690703B2 (ja) * 2010-11-30 2015-03-25 富士フイルム株式会社 ネガ型パターン形成方法及びレジストパターン
KR101863395B1 (ko) 2010-12-28 2018-05-31 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및 화합물
EP2472327A1 (de) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Fotoresiste und Verwendungsverfahren dafür
EP2472328B1 (de) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
EP2472329B1 (de) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JP6373007B2 (ja) 2011-02-02 2018-08-15 スリーエム イノベイティブ プロパティズ カンパニー ノズル及びノズルを作製する方法
KR20140007833A (ko) 2011-02-04 2014-01-20 제이에스알 가부시끼가이샤 포토레지스트 조성물
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
JP5386527B2 (ja) * 2011-02-18 2014-01-15 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
US8906590B2 (en) 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
JP5786426B2 (ja) 2011-04-11 2015-09-30 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法
US9599895B2 (en) 2011-04-12 2017-03-21 Empire Technology Development Llc Lithography using photoresist with photoinitiator and photoinhibitor
JP5772717B2 (ja) * 2011-05-30 2015-09-02 信越化学工業株式会社 パターン形成方法
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
US9104100B2 (en) 2011-06-08 2015-08-11 3M Innovative Properties Company Photoresists containing polymer-tethered nanoparticles
US8568958B2 (en) 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
JP5889568B2 (ja) 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
KR101978532B1 (ko) 2011-08-16 2019-05-14 제이에스알 가부시끼가이샤 포토레지스트 조성물
JP2013225094A (ja) 2011-10-07 2013-10-31 Jsr Corp フォトレジスト組成物及びレジストパターン形成方法
US20130108956A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
US20130105440A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite negative photosensitive composition and use thereof
US9962430B2 (en) 2012-02-15 2018-05-08 Chirhoclin, Inc. Methods for treating pain associated with chronic pancreatitis
US8968586B2 (en) 2012-02-15 2015-03-03 Jsr Corporation Pattern-forming method
US11635688B2 (en) 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
KR102025782B1 (ko) 2012-03-19 2019-09-26 제이에스알 가부시끼가이샤 레지스트 패턴 형성 방법 및 포토레지스트 조성물
KR102070058B1 (ko) 2012-03-19 2020-01-30 제이에스알 가부시끼가이샤 포토레지스트 조성물, 화합물 및 그의 제조 방법
JP5490168B2 (ja) 2012-03-23 2014-05-14 富士フイルム株式会社 平版印刷版原版及び平版印刷版の作製方法
JP5512730B2 (ja) 2012-03-30 2014-06-04 富士フイルム株式会社 平版印刷版の作製方法
JP6019677B2 (ja) 2012-04-02 2016-11-02 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
US11406718B2 (en) 2012-05-29 2022-08-09 Chirhoclin, Inc. Methods of detecting pancreobiliary ductal leaks
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
JP5982442B2 (ja) * 2012-10-31 2016-08-31 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液、並びに、これを使用したパターン形成方法、及び、電子デバイスの製造方法
JP5764589B2 (ja) 2012-10-31 2015-08-19 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US20150060113A1 (en) 2013-01-22 2015-03-05 Yongcai Wang Photocurable composition, article, and method of use
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
WO2014171429A1 (ja) 2013-04-17 2014-10-23 Jsr株式会社 半導体素子の製造方法及びイオン注入方法
US9291909B2 (en) 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
JP6292059B2 (ja) 2013-08-13 2018-03-14 Jsr株式会社 基板の加工方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US20150110867A1 (en) 2013-10-23 2015-04-23 Lawrence Livermore National Security, Llc Techniques for release of material into an environment
US8936890B1 (en) 2013-11-05 2015-01-20 Eastman Kodak Company Electroless plating method
US9128378B2 (en) 2013-11-05 2015-09-08 Eastman Kodak Company Forming conductive metal patterns with reactive polymers
US9023560B1 (en) 2013-11-05 2015-05-05 Eastman Kodak Company Electroless plating method using non-reducing agent
US9122161B2 (en) 2013-11-05 2015-09-01 Eastman Kodak Company Electroless plating method using bleaching
US9005854B1 (en) 2013-11-05 2015-04-14 Eastman Kodak Company Electroless plating method using halide
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US9155201B2 (en) 2013-12-03 2015-10-06 Eastman Kodak Company Preparation of articles with conductive micro-wire pattern
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9418836B2 (en) 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9274426B2 (en) 2014-04-29 2016-03-01 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating compositions and processes thereof
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6405772B2 (ja) * 2014-07-31 2018-10-17 住友化学株式会社 組成物およびそれを用いた有機薄膜トランジスタ
JP6363431B2 (ja) 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US10241409B2 (en) 2015-12-22 2019-03-26 AZ Electronic Materials (Luxembourg) S.à.r.l. Materials containing metal oxides, processes for making same, and processes for using same
KR102477802B1 (ko) 2016-12-21 2022-12-15 메르크 파텐트 게엠베하 금속 산화물 나노입자 및 유기 중합체를 함유하는 스핀-온 물질의 조성물
SG11202001741PA (en) 2017-09-06 2020-03-30 Merck Patent Gmbh Spin-on inorganic oxide containing composition useful as hard masks and filling materials with improved thermal stability
US20210277017A1 (en) 2018-07-19 2021-09-09 Lintfield Limited Thioxanthone Derivatives, Composition Comprising the Same and Pattern Forming Method Comprising Said Composition
GB202000736D0 (en) 2020-01-17 2020-03-04 Lintfield Ltd Modified thioxanthone photoinitators
US11744878B2 (en) 2020-08-19 2023-09-05 Chirhoclin, Inc. Methods for treatment of COVID-19 syndrome
WO2022233919A2 (en) 2021-05-06 2022-11-10 Merck Patent Gmbh Spin on metal-organic formulations

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB844039A (en) * 1959-02-20 1960-08-10 Kalle & Co Ag Improvements in or relating to photo-mechanical reproduction
US3515552A (en) * 1966-09-16 1970-06-02 Minnesota Mining & Mfg Light-sensitive imaging sheet and method of using
US3536489A (en) * 1966-09-16 1970-10-27 Minnesota Mining & Mfg Heterocyclic iminoaromatic-halogen containing photoinitiator light sensitive compositions
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US3782939A (en) * 1972-02-09 1974-01-01 Mining And Mfg Co Dry positive-acting photoresist
US4210449A (en) * 1972-10-16 1980-07-01 American Can Company Radiation sensitive composition comprising copolymer of glycidyl methacrylate and allyl glycidyl ether and diazonium salt of complex halogenide
CA1005673A (en) * 1972-12-22 1977-02-22 Constantine C. Petropoulos Positive printing plate incorporating diazoquinone
US3859099A (en) * 1972-12-22 1975-01-07 Eastman Kodak Co Positive plate incorporating diazoquinone
US3984253A (en) * 1974-04-22 1976-10-05 Eastman Kodak Company Imaging processes and elements therefor
CH621416A5 (de) * 1975-03-27 1981-01-30 Hoechst Ag
DE2529054C2 (de) * 1975-06-30 1982-04-29 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur Herstellung eines zur Vorlage negativen Resistbildes
US4193799A (en) * 1976-07-09 1980-03-18 General Electric Company Method of making printing plates and printed circuit
JPS5381116A (en) * 1976-12-25 1978-07-18 Agency Of Ind Science & Technol Radiation sensitive polymer and its working method
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
US4273668A (en) * 1977-09-14 1981-06-16 General Electric Company Arylsulfonium salt-solvent mixtures
US4250053A (en) * 1979-05-21 1981-02-10 Minnesota Mining And Manufacturing Company Sensitized aromatic iodonium or aromatic sulfonium salt photoinitiator systems
DE2928636A1 (de) * 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
JPS5629232A (en) * 1979-08-16 1981-03-24 Fujitsu Ltd Pattern forming material
JPS5639539A (en) * 1979-09-07 1981-04-15 Chiyou Lsi Gijutsu Kenkyu Kumiai Pattern forming method
NL8101200A (nl) * 1981-03-12 1982-10-01 Philips Nv Werkwijze voor het aanbrengen van een resistmateriaal op een drager en resist-materiaal.
JPS5868743A (ja) * 1981-10-21 1983-04-23 Hitachi Ltd 放射線感応性有機高分子材料

Also Published As

Publication number Publication date
EP0102450B1 (de) 1991-09-04
DE3382809D1 (de) 1996-10-10
JPH0227660B2 (de) 1990-06-19
JPS5945439A (ja) 1984-03-14
EP0102450A2 (de) 1984-03-14
EP0404206A2 (de) 1990-12-27
US4491628A (en) 1985-01-01
EP0404206B1 (de) 1996-09-04
EP0404206A3 (de) 1991-02-27
DE3382809T2 (de) 1997-04-03
EP0102450A3 (en) 1986-10-15

Similar Documents

Publication Publication Date Title
DE3382401D1 (de) Photolackzusammensetzung.
DE3280162D1 (de) Polyaethylenzusammensetzung.
FI78601B (fi) Engaongsbloeja.
FI78611B (fi) Uppbevaringspaose.
FI73534B (fi) Bandkassett.
FI73505B (fi) Faestelement.
ES277805Y (es) Lapicero portaminas.
ATE18343T1 (de) Bauelement.
FI77050B (fi) Gelatinkomposition foer sprutgjutning.
DE3483812D1 (de) Negativer polynorbornen-photolack.
BE896665A (fr) Compositions antisolaires.
DE3361253D1 (de) Durable primer composition
BR8105210A (pt) Composicao esporicida
FI78606B (fi) Saekerhetssaete.
DE3381054D1 (de) Immunoessay.
DE3580443D1 (de) Hochkontrastphotolackentwickler.
DE3785019T2 (de) Lichtempfindliche Lackzusammensetzung.
DE3381517D1 (de) Dieselkraftstoffzusammensetzung.
IT8021537A0 (it) Composizioni fungicibe.
IT8319583A0 (it) Composizioni anti-virali.
FI73520B (fi) Maolanordning.
DE3381646D1 (de) Thermochrom-zusammensetzung.
DE3382498D1 (de) Konservenbuechse.
ES272075Y (es) Corretilla.
FI834399A (fi) Foerfarande foer utvinning av metaller fraon en uppslamning innehaollande dessa i loest form.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee