DE3380543D1 - Semiconductor memory devices with word line discharging circuits - Google Patents

Semiconductor memory devices with word line discharging circuits

Info

Publication number
DE3380543D1
DE3380543D1 DE8383303859T DE3380543T DE3380543D1 DE 3380543 D1 DE3380543 D1 DE 3380543D1 DE 8383303859 T DE8383303859 T DE 8383303859T DE 3380543 T DE3380543 T DE 3380543T DE 3380543 D1 DE3380543 D1 DE 3380543D1
Authority
DE
Germany
Prior art keywords
word line
semiconductor memory
memory devices
line discharging
discharging circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383303859T
Other languages
English (en)
Inventor
Yoshinori Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57116055A external-priority patent/JPS598191A/ja
Priority claimed from JP57233779A external-priority patent/JPS59124756A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3380543D1 publication Critical patent/DE3380543D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
DE8383303859T 1982-07-02 1983-07-01 Semiconductor memory devices with word line discharging circuits Expired DE3380543D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57116055A JPS598191A (ja) 1982-07-02 1982-07-02 遅延放電回路
JP57233779A JPS59124756A (ja) 1982-12-29 1982-12-29 半導体メモリ

Publications (1)

Publication Number Publication Date
DE3380543D1 true DE3380543D1 (en) 1989-10-12

Family

ID=26454438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383303859T Expired DE3380543D1 (en) 1982-07-02 1983-07-01 Semiconductor memory devices with word line discharging circuits

Country Status (3)

Country Link
US (1) US4604728A (de)
EP (1) EP0100160B1 (de)
DE (1) DE3380543D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4864539A (en) * 1987-01-15 1989-09-05 International Business Machines Corporation Radiation hardened bipolar static RAM cell
US5222045A (en) * 1990-05-25 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device operable with power supply voltage variation
JP2533399B2 (ja) * 1990-05-25 1996-09-11 三菱電機株式会社 センスアンプ
JPH0442495A (ja) * 1990-06-07 1992-02-13 Mitsubishi Electric Corp 半導体記憶装置
US6885581B2 (en) * 2001-04-05 2005-04-26 T-Ram, Inc. Dynamic data restore in thyristor-based memory device
US7376008B2 (en) * 2003-08-07 2008-05-20 Contour Seminconductor, Inc. SCR matrix storage device
US7894256B1 (en) 2005-06-22 2011-02-22 T-Ram Semiconductor, Inc. Thyristor based memory cell
US8093107B1 (en) 2005-06-22 2012-01-10 T-Ram Semiconductor, Inc. Thyristor semiconductor memory and method of manufacture
US7894255B1 (en) 2005-06-22 2011-02-22 T-Ram Semiconductor, Inc. Thyristor based memory cell
US7460395B1 (en) * 2005-06-22 2008-12-02 T-Ram Semiconductor, Inc. Thyristor-based semiconductor memory and memory array with data refresh
US20070189067A1 (en) * 2006-02-15 2007-08-16 Francis Goodwin Dynamic memory
DE102015004824A1 (de) * 2015-04-14 2016-10-20 Infineon Technologies Ag Verfahren und Vorrichtung zum Steuern von Strom in einer Array-Zelle
CN115173535B (zh) * 2022-09-08 2023-01-24 苏州浪潮智能科技有限公司 一种储能模块的放电电路、备电能力确定方法及相关组件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5341968A (en) * 1976-09-29 1978-04-15 Hitachi Ltd Semiconductor circuit
US4168490A (en) * 1978-06-26 1979-09-18 Fairchild Camera And Instrument Corporation Addressable word line pull-down circuit
JPS5831673B2 (ja) * 1979-08-22 1983-07-07 富士通株式会社 半導体記憶装置
JPS5637884A (en) * 1979-08-30 1981-04-11 Fujitsu Ltd Terminating circuit for word selective signal line of semiconductor memory unit
JPS5831674B2 (ja) * 1979-12-19 1983-07-07 株式会社日立製作所 メモリ

Also Published As

Publication number Publication date
EP0100160A3 (en) 1986-04-23
EP0100160A2 (de) 1984-02-08
US4604728A (en) 1986-08-05
EP0100160B1 (de) 1989-09-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee