DE3372383D1 - Method for growing gaas single crystal by using floating zone - Google Patents

Method for growing gaas single crystal by using floating zone

Info

Publication number
DE3372383D1
DE3372383D1 DE8383108312T DE3372383T DE3372383D1 DE 3372383 D1 DE3372383 D1 DE 3372383D1 DE 8383108312 T DE8383108312 T DE 8383108312T DE 3372383 T DE3372383 T DE 3372383T DE 3372383 D1 DE3372383 D1 DE 3372383D1
Authority
DE
Germany
Prior art keywords
single crystal
gaas single
floating zone
growing gaas
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383108312T
Other languages
English (en)
Inventor
Jun-Ichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Application granted granted Critical
Publication of DE3372383D1 publication Critical patent/DE3372383D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
DE8383108312T 1982-08-27 1983-08-24 Method for growing gaas single crystal by using floating zone Expired DE3372383D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57149747A JPS6041036B2 (ja) 1982-08-27 1982-08-27 ＧａＡｓ浮遊帯融解草結晶製造装置

Publications (1)

Publication Number Publication Date
DE3372383D1 true DE3372383D1 (en) 1987-08-13

Family

ID=15481886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383108312T Expired DE3372383D1 (en) 1982-08-27 1983-08-24 Method for growing gaas single crystal by using floating zone

Country Status (5)

Country Link
US (1) US4619811A (de)
EP (1) EP0102054B1 (de)
JP (1) JPS6041036B2 (de)
CA (1) CA1228525A (de)
DE (1) DE3372383D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6345198A (ja) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd 多元系結晶の製造方法
JPH0696478B2 (ja) * 1989-01-26 1994-11-30 科学技術庁無機材質研究所長 単結晶自動育成法
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
JP2002005745A (ja) * 2000-06-26 2002-01-09 Nec Corp 温度測定装置、および温度測定方法
CN107223168B (zh) * 2015-02-05 2019-11-05 美国陶氏有机硅公司 用于宽能带隙晶体的种晶升华的炉
JP5926432B1 (ja) * 2015-10-01 2016-05-25 伸 阿久津 単結晶製造装置および単結晶製造方法
CN211999987U (zh) * 2020-04-17 2020-11-24 中国电子科技南湖研究院 一种制备大尺寸单晶的装置
JP2023524962A (ja) 2020-05-06 2023-06-14 眉山博雅新材料股▲ふん▼有限公司 結晶の製造装置及び成長方法
CN111254486A (zh) * 2020-05-06 2020-06-09 眉山博雅新材料有限公司 一种晶体制备装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212495B (de) * 1955-07-28 1966-03-17 Siemens Ag Vorrichtung zum tiegellosen Zonenschmelzen von Halbleiterstaeben und Verfahren zu deren Betrieb
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US2905798A (en) * 1958-09-15 1959-09-22 Lindberg Eng Co Induction heating apparatus
US3136876A (en) * 1960-10-26 1964-06-09 Clevite Corp Indicator and control system
FR1277869A (fr) * 1961-01-23 1961-12-01 Raytheon Co Procédé pour chauffer de la matière fondue et la maintenir suspendue sans contact étranger
BE626374A (de) * 1961-12-22
FR1370638A (fr) * 1963-05-22 1964-08-28 Siemens Ag Procédé pour l'affinage d'arséniure de gallium et dispositif pour la mise en oeuvre de ce procédé
US3260573A (en) * 1963-06-26 1966-07-12 Siemens Ag Zone melting gallium in a recycling arsenic atmosphere
US3446602A (en) * 1965-11-13 1969-05-27 Nippon Electric Co Flame fusion crystal growing employing vertically displaceable pedestal responsive to temperature
DE1519902C3 (de) * 1966-09-24 1975-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3642443A (en) * 1968-08-19 1972-02-15 Ibm Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
US3857990A (en) * 1972-04-06 1974-12-31 Massachusetts Inst Technology Heat pipe furnace
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
US3936346A (en) * 1973-12-26 1976-02-03 Texas Instruments Incorporated Crystal growth combining float zone technique with the water cooled RF container method
JPS5122883A (en) * 1974-08-20 1976-02-23 Mitsubishi Chem Ind Ll22 amino 44 kuroro 44 pentensanno seizoho
DE3007394A1 (de) * 1980-02-27 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines siliciumstabes
DE3007377A1 (de) * 1980-02-27 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines siliciumstabes

Also Published As

Publication number Publication date
CA1228525A (en) 1987-10-27
EP0102054B1 (de) 1987-07-08
JPS6041036B2 (ja) 1985-09-13
EP0102054A1 (de) 1984-03-07
JPS5939797A (ja) 1984-03-05
US4619811A (en) 1986-10-28

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