DE3369600D1 - Method of manufacturing a semiconductor device by means of plasma etching - Google Patents
Method of manufacturing a semiconductor device by means of plasma etchingInfo
- Publication number
- DE3369600D1 DE3369600D1 DE8383201609T DE3369600T DE3369600D1 DE 3369600 D1 DE3369600 D1 DE 3369600D1 DE 8383201609 T DE8383201609 T DE 8383201609T DE 3369600 T DE3369600 T DE 3369600T DE 3369600 D1 DE3369600 D1 DE 3369600D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8204437A NL8204437A (nl) | 1982-11-16 | 1982-11-16 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3369600D1 true DE3369600D1 (en) | 1987-03-05 |
Family
ID=19840600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383201609T Expired DE3369600D1 (en) | 1982-11-16 | 1983-11-10 | Method of manufacturing a semiconductor device by means of plasma etching |
Country Status (6)
Country | Link |
---|---|
US (1) | US4717447A (de) |
EP (1) | EP0109706B1 (de) |
JP (1) | JPS59100539A (de) |
CA (1) | CA1208810A (de) |
DE (1) | DE3369600D1 (de) |
NL (1) | NL8204437A (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61158143A (ja) * | 1984-12-29 | 1986-07-17 | Fujitsu Ltd | 窒化シリコン膜のエッチング方法 |
US5180466A (en) * | 1984-12-29 | 1993-01-19 | Fujitsu Limited | Process for dry etching a silicon nitride layer |
JPS6399533A (ja) * | 1986-05-31 | 1988-04-30 | Toshiba Corp | シリコン窒化膜のドライエツチング方法及びドライエツチング装置 |
US4778583A (en) * | 1987-05-11 | 1988-10-18 | Eastman Kodak Company | Semiconductor etching process which produces oriented sloped walls |
US4878995A (en) * | 1987-07-02 | 1989-11-07 | Kabushiki Kaisha Toshiba | Method of dry etching and apparatus for use in such method |
US4844773A (en) * | 1987-07-16 | 1989-07-04 | Texas Instruments Incorporated | Process for etching silicon nitride film |
KR930005440B1 (ko) * | 1989-10-02 | 1993-06-21 | 다이닛뽕 스쿠린 세이소오 가부시키가이샤 | 절연막의 선택적 제거방법 |
EP0424299A3 (en) * | 1989-10-20 | 1991-08-28 | International Business Machines Corporation | Selective silicon nitride plasma etching |
US5188704A (en) * | 1989-10-20 | 1993-02-23 | International Business Machines Corporation | Selective silicon nitride plasma etching |
JPH04302426A (ja) * | 1991-03-29 | 1992-10-26 | Sony Corp | デジタル・エッチング方法 |
DE4232475C2 (de) * | 1992-09-28 | 1998-07-02 | Siemens Ag | Verfahren zum plasmachemischen Trockenätzen von Si¶3¶N¶4¶-Schichten hochselektiv zu SiO¶2¶-Schichten |
US5338395A (en) * | 1993-03-10 | 1994-08-16 | Micron Semiconductor, Inc. | Method for enhancing etch uniformity useful in etching submicron nitride features |
DE4315435C2 (de) * | 1993-05-08 | 1995-03-09 | Itt Ind Gmbh Deutsche | Verfahren zum selektiven Ätzen von auf einem Halbleitersubstrat angeordneten Isolier- und Pufferschichten |
US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
US6253704B1 (en) | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US5877090A (en) * | 1997-06-03 | 1999-03-02 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH3 or SF6 and HBR and N2 |
US6165375A (en) * | 1997-09-23 | 2000-12-26 | Cypress Semiconductor Corporation | Plasma etching method |
US6294102B1 (en) * | 1999-05-05 | 2001-09-25 | International Business Machines Corporation | Selective dry etch of a dielectric film |
US6372634B1 (en) | 1999-06-15 | 2002-04-16 | Cypress Semiconductor Corp. | Plasma etch chemistry and method of improving etch control |
US6322716B1 (en) | 1999-08-30 | 2001-11-27 | Cypress Semiconductor Corp. | Method for conditioning a plasma etch chamber |
US7803639B2 (en) * | 2007-01-04 | 2010-09-28 | International Business Machines Corporation | Method of forming vertical contacts in integrated circuits |
US8008095B2 (en) * | 2007-10-03 | 2011-08-30 | International Business Machines Corporation | Methods for fabricating contacts to pillar structures in integrated circuits |
US8563225B2 (en) | 2008-05-23 | 2013-10-22 | International Business Machines Corporation | Forming a self-aligned hard mask for contact to a tunnel junction |
JP5537324B2 (ja) * | 2010-08-05 | 2014-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
US11164751B2 (en) | 2017-06-08 | 2021-11-02 | Showa Denko K.K. | Etching method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4208241A (en) * | 1978-07-31 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
US4211601A (en) * | 1978-07-31 | 1980-07-08 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
NL8004005A (nl) * | 1980-07-11 | 1982-02-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US4450042A (en) * | 1982-07-06 | 1984-05-22 | Texas Instruments Incorporated | Plasma etch chemistry for anisotropic etching of silicon |
-
1982
- 1982-11-16 NL NL8204437A patent/NL8204437A/nl not_active Application Discontinuation
-
1983
- 1983-10-31 US US06/547,178 patent/US4717447A/en not_active Expired - Fee Related
- 1983-11-08 CA CA000440705A patent/CA1208810A/en not_active Expired
- 1983-11-10 EP EP83201609A patent/EP0109706B1/de not_active Expired
- 1983-11-10 DE DE8383201609T patent/DE3369600D1/de not_active Expired
- 1983-11-12 JP JP58211730A patent/JPS59100539A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
NL8204437A (nl) | 1984-06-18 |
EP0109706B1 (de) | 1987-01-28 |
CA1208810A (en) | 1986-07-29 |
US4717447A (en) | 1988-01-05 |
JPS59100539A (ja) | 1984-06-09 |
JPH0527245B2 (de) | 1993-04-20 |
EP0109706A1 (de) | 1984-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |