DE3279356D1 - Memory cell comprising a floating gate device - Google Patents

Memory cell comprising a floating gate device

Info

Publication number
DE3279356D1
DE3279356D1 DE8282107808T DE3279356T DE3279356D1 DE 3279356 D1 DE3279356 D1 DE 3279356D1 DE 8282107808 T DE8282107808 T DE 8282107808T DE 3279356 T DE3279356 T DE 3279356T DE 3279356 D1 DE3279356 D1 DE 3279356D1
Authority
DE
Germany
Prior art keywords
memory cell
floating gate
gate device
floating
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282107808T
Other languages
English (en)
Inventor
Herbert Carl Cook
Ronald Roy Troutman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3279356D1 publication Critical patent/DE3279356D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
DE8282107808T 1981-11-27 1982-08-25 Memory cell comprising a floating gate device Expired DE3279356D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/325,479 US4434478A (en) 1981-11-27 1981-11-27 Programming floating gate devices

Publications (1)

Publication Number Publication Date
DE3279356D1 true DE3279356D1 (en) 1989-02-16

Family

ID=23268055

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282107808T Expired DE3279356D1 (en) 1981-11-27 1982-08-25 Memory cell comprising a floating gate device

Country Status (4)

Country Link
US (1) US4434478A (de)
EP (1) EP0080560B1 (de)
JP (1) JPS5894196A (de)
DE (1) DE3279356D1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486859A (en) * 1982-02-19 1984-12-04 International Business Machines Corporation Electrically alterable read-only storage cell and method of operating same
DE3277715D1 (en) * 1982-08-06 1987-12-23 Itt Ind Gmbh Deutsche Electrically programmable memory array
JPS6045999A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体不揮発性記憶装置
JPS60179999A (ja) * 1984-02-28 1985-09-13 Fujitsu Ltd 不揮発性半導体記憶装置
JPS60113397A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd プログラマブルリ−ドオンリメモリ装置
US4727515A (en) * 1983-12-14 1988-02-23 General Electric Co. High density programmable memory array
US4628487A (en) * 1984-08-14 1986-12-09 Texas Instruments Incorporated Dual slope, feedback controlled, EEPROM programming
US4761768A (en) * 1985-03-04 1988-08-02 Lattice Semiconductor Corporation Programmable logic device
US4833646A (en) * 1985-03-04 1989-05-23 Lattice Semiconductor Corp. Programmable logic device with limited sense currents and noise reduction
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
JPS62217493A (ja) * 1986-02-27 1987-09-24 Fujitsu Ltd 半導体不揮発性記憶装置
US5122985A (en) * 1990-04-16 1992-06-16 Giovani Santin Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
EP0838823A3 (de) * 1990-09-17 1998-09-02 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
US5258949A (en) * 1990-12-03 1993-11-02 Motorola, Inc. Nonvolatile memory with enhanced carrier generation and method for programming the same
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
JP3462894B2 (ja) * 1993-08-27 2003-11-05 株式会社東芝 不揮発性半導体メモリ及びそのデータプログラム方法
US6091639A (en) 1993-08-27 2000-07-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US5485423A (en) * 1994-10-11 1996-01-16 Advanced Micro Devices, Inc. Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
JP2701757B2 (ja) * 1994-10-20 1998-01-21 日本電気株式会社 半導体記憶装置の書き込み方法
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
FR2732151B1 (fr) * 1995-03-21 1997-04-25 Sgs Thomson Microelectronics Procede de protection en ecriture d'une memoire en circuit integre et circuit integre correspondant
US5721704A (en) * 1996-08-23 1998-02-24 Motorola, Inc. Control gate driver circuit for a non-volatile memory and memory using same
US5841701A (en) * 1997-01-21 1998-11-24 Advanced Micro Devices, Inc. Method of charging and discharging floating gage transistors to reduce leakage current
US6040996A (en) * 1998-11-16 2000-03-21 Chartered Semiconductor Manufacturing, Ltd. Constant current programming waveforms for non-volatile memories
US6522584B1 (en) * 2001-08-02 2003-02-18 Micron Technology, Inc. Programming methods for multi-level flash EEPROMs
US7031192B1 (en) * 2002-11-08 2006-04-18 Halo Lsi, Inc. Non-volatile semiconductor memory and driving method
US7102930B2 (en) * 2003-10-14 2006-09-05 Silicon Storage Technology, Inc. Method of programming a non-volatile memory cell to eliminate or to minimize program deceleration
US7092288B2 (en) * 2004-02-04 2006-08-15 Atmel Corporation Non-volatile memory array with simultaneous write and erase feature
JP2007220218A (ja) * 2006-02-17 2007-08-30 Fujitsu Ltd 半導体記憶装置およびその制御方法
JP5888555B2 (ja) * 2012-01-25 2016-03-22 エスアイアイ・セミコンダクタ株式会社 不揮発性半導体記憶装置
US8953362B2 (en) 2012-05-11 2015-02-10 Adesto Technologies Corporation Resistive devices and methods of operation thereof
US9165644B2 (en) 2012-05-11 2015-10-20 Axon Technologies Corporation Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse
US10056141B2 (en) * 2014-07-30 2018-08-21 Hewlett Packard Enterprise Development Lp Current behavior of elements

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450116C2 (de) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
JPS54152826A (en) * 1978-05-24 1979-12-01 Nec Corp Writing method of nonvolatile memory

Also Published As

Publication number Publication date
EP0080560A3 (en) 1986-02-05
EP0080560B1 (de) 1989-01-11
EP0080560A2 (de) 1983-06-08
JPS5894196A (ja) 1983-06-04
US4434478A (en) 1984-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee