DE3279106D1 - Process for the thermochemical treatments of metals by ion bombardment - Google Patents

Process for the thermochemical treatments of metals by ion bombardment

Info

Publication number
DE3279106D1
DE3279106D1 DE8282400407T DE3279106T DE3279106D1 DE 3279106 D1 DE3279106 D1 DE 3279106D1 DE 8282400407 T DE8282400407 T DE 8282400407T DE 3279106 T DE3279106 T DE 3279106T DE 3279106 D1 DE3279106 D1 DE 3279106D1
Authority
DE
Germany
Prior art keywords
metals
ion bombardment
anode
pieces
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282400407T
Other languages
English (en)
Inventor
Roger Speri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovatique SA
Original Assignee
Innovatique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9256233&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3279106(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Innovatique SA filed Critical Innovatique SA
Application granted granted Critical
Publication of DE3279106D1 publication Critical patent/DE3279106D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
DE8282400407T 1981-03-13 1982-03-09 Process for the thermochemical treatments of metals by ion bombardment Expired DE3279106D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8105107A FR2501727A1 (fr) 1981-03-13 1981-03-13 Procede de traitements thermochimiques de metaux par bombardement ionique

Publications (1)

Publication Number Publication Date
DE3279106D1 true DE3279106D1 (en) 1988-11-17

Family

ID=9256233

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282400407T Expired DE3279106D1 (en) 1981-03-13 1982-03-09 Process for the thermochemical treatments of metals by ion bombardment

Country Status (6)

Country Link
US (2) US4490190A (de)
EP (1) EP0062550B1 (de)
JP (1) JPS57210971A (de)
AT (1) ATE37907T1 (de)
DE (1) DE3279106D1 (de)
FR (1) FR2501727A1 (de)

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FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
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US5985742A (en) * 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JPH11316919A (ja) 1998-04-30 1999-11-16 Hitachi Ltd スピントンネル磁気抵抗効果型磁気ヘッド
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
EP1212787B1 (de) 1999-08-10 2014-10-08 Silicon Genesis Corporation Spaltprozess für die herstellung mehrlagiger substrate mit geringer implantationsdosis
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
JP4257157B2 (ja) * 2003-06-13 2009-04-22 本田技研工業株式会社 窒化処理方法及び装置
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US20100294751A1 (en) * 2009-05-22 2010-11-25 Innovative Engineering & Product Development, Inc. Variable frequency heating controller
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
BR102014026134B1 (pt) * 2014-10-20 2022-09-27 Universidade Federal De Santa Catarina Processo e reator de plasma para tratamento termoquímico de superfície de peças metálicas

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Also Published As

Publication number Publication date
FR2501727A1 (fr) 1982-09-17
US4490190A (en) 1984-12-25
FR2501727B1 (de) 1983-06-03
ATE37907T1 (de) 1988-10-15
EP0062550B1 (de) 1988-10-12
US4672170A (en) 1987-06-09
JPS57210971A (en) 1982-12-24
EP0062550A1 (de) 1982-10-13

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation