DE3277154D1 - Method for producing single crystal semiconductor areas - Google Patents

Method for producing single crystal semiconductor areas

Info

Publication number
DE3277154D1
DE3277154D1 DE8282305770T DE3277154T DE3277154D1 DE 3277154 D1 DE3277154 D1 DE 3277154D1 DE 8282305770 T DE8282305770 T DE 8282305770T DE 3277154 T DE3277154 T DE 3277154T DE 3277154 D1 DE3277154 D1 DE 3277154D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal semiconductor
producing single
semiconductor areas
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282305770T
Other languages
English (en)
Inventor
William G Hawkins
Jerry G Black
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3277154D1 publication Critical patent/DE3277154D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
DE8282305770T 1981-10-29 1982-10-29 Method for producing single crystal semiconductor areas Expired DE3277154D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/316,210 US4388145A (en) 1981-10-29 1981-10-29 Laser annealing for growth of single crystal semiconductor areas

Publications (1)

Publication Number Publication Date
DE3277154D1 true DE3277154D1 (en) 1987-10-08

Family

ID=23228029

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282305770T Expired DE3277154D1 (en) 1981-10-29 1982-10-29 Method for producing single crystal semiconductor areas

Country Status (4)

Country Link
US (1) US4388145A (de)
EP (1) EP0078681B1 (de)
JP (1) JPS5880832A (de)
DE (1) DE3277154D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法
JPS58194799A (ja) * 1982-05-07 1983-11-12 Hitachi Ltd 単結晶シリコンの製造方法
JPS60127722A (ja) * 1983-12-15 1985-07-08 Fujitsu Ltd 半導体装置の製造方法
US4585512A (en) * 1984-01-27 1986-04-29 Sony Corporation Method for making seed crystals for single-crystal semiconductor devices
US4536251A (en) * 1984-06-04 1985-08-20 Xerox Corporation Method for eliminating laser-induced substrate fissures associated with crystallized silicon areas
NL8500931A (nl) * 1985-03-29 1986-10-16 Philips Nv Werkwijze voor het omzetten van polykristallijn halfgeleidermateriaal in monokristallijn halfgeleidermateriaal.
FR2582455B1 (fr) * 1985-05-21 1987-08-14 Menigaux Louis Procede de fabrication d'un laser a semiconducteur a geometrie a ruban et laser obtenu par ce procede
USRE33274E (en) * 1985-09-13 1990-07-24 Xerox Corporation Selective disordering of well structures by laser annealing
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
US5264072A (en) * 1985-12-04 1993-11-23 Fujitsu Limited Method for recrystallizing conductive films by an indirect-heating with a thermal-conduction-controlling layer
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation
US5459346A (en) * 1988-06-28 1995-10-17 Ricoh Co., Ltd. Semiconductor substrate with electrical contact in groove
DE3921038C2 (de) * 1988-06-28 1998-12-10 Ricoh Kk Verfahren zur Herstellung eines Halbleitersubstrats bzw. Festkörperaufbaus
US5173446A (en) * 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US5322589A (en) * 1989-02-09 1994-06-21 Fujitsu Limited Process and apparatus for recrystallization of semiconductor layer
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JP3321890B2 (ja) * 1992-06-23 2002-09-09 ソニー株式会社 半導体結晶の形成方法及び半導体素子
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
CN1052566C (zh) 1993-11-05 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US6059873A (en) 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
US7135389B2 (en) * 2001-12-20 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Irradiation method of laser beam
JP4141138B2 (ja) * 2001-12-21 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4887663B2 (ja) * 2005-05-16 2012-02-29 井関農機株式会社 コンバイン
US20090226694A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
DE2837653A1 (de) * 1978-08-29 1980-04-17 Siemens Ag Verfahren zur lokal begrenzten erwaermung von festkoerpern
JPS55115341A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas

Also Published As

Publication number Publication date
JPS5880832A (ja) 1983-05-16
EP0078681B1 (de) 1987-09-02
EP0078681A2 (de) 1983-05-11
US4388145A (en) 1983-06-14
EP0078681A3 (en) 1985-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee