DE3272887D1 - Film forming method - Google Patents

Film forming method

Info

Publication number
DE3272887D1
DE3272887D1 DE8282106621T DE3272887T DE3272887D1 DE 3272887 D1 DE3272887 D1 DE 3272887D1 DE 8282106621 T DE8282106621 T DE 8282106621T DE 3272887 T DE3272887 T DE 3272887T DE 3272887 D1 DE3272887 D1 DE 3272887D1
Authority
DE
Germany
Prior art keywords
film forming
forming method
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282106621T
Other languages
English (en)
Inventor
Shigeru Kobayashi
Nobuo Nakagawa
Katsuo Abe
Tsuneaki Kamei
Kazuyuki Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11366081A external-priority patent/JPS5816068A/ja
Priority claimed from JP8145782A external-priority patent/JPS58199860A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3272887D1 publication Critical patent/DE3272887D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
DE8282106621T 1981-07-22 1982-07-22 Film forming method Expired DE3272887D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11366081A JPS5816068A (ja) 1981-07-22 1981-07-22 プレ−ナマグネトロン方式のスパッタリング方法
JP8145782A JPS58199860A (ja) 1982-05-17 1982-05-17 成膜方法

Publications (1)

Publication Number Publication Date
DE3272887D1 true DE3272887D1 (en) 1986-10-02

Family

ID=26422479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282106621T Expired DE3272887D1 (en) 1981-07-22 1982-07-22 Film forming method

Country Status (3)

Country Link
US (1) US4444635A (de)
EP (1) EP0070574B1 (de)
DE (1) DE3272887D1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8402012A (nl) * 1983-07-19 1985-02-18 Varian Associates Magnetron spetter deklaag opbrengbron voor zowel magnetische als niet-magnetische trefplaatmaterialen.
US4606802A (en) * 1983-12-21 1986-08-19 Hitachi, Ltd. Planar magnetron sputtering with modified field configuration
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
JPS6134177A (ja) * 1984-07-25 1986-02-18 Tokuda Seisakusho Ltd マグネツト駆動装置
US4610774A (en) * 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
JPS61139018A (ja) * 1984-12-10 1986-06-26 株式会社村田製作所 チツプ型電子部品の外部接続用電極を形成する方法
JPS61183467A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd スパッタリング方法及びその装置
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置
US4731172A (en) * 1985-04-18 1988-03-15 Matsushita Electric Industrial Co., Ltd. Method for sputtering multi-component thin-film
US4834855A (en) * 1985-05-02 1989-05-30 Hewlett-Packard Company Method for sputter depositing thin films
US4647361A (en) * 1985-09-03 1987-03-03 International Business Machines Corporation Sputtering apparatus
JP2571948B2 (ja) * 1986-04-04 1997-01-16 リージェンツ オブ ザ ユニバーシティ オブ ミネソタ 耐火性金属化合物のアークコーティング
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip
US4971674A (en) * 1986-08-06 1990-11-20 Ube Industries, Ltd. Magnetron sputtering method and apparatus
JPS63241164A (ja) * 1987-03-30 1988-10-06 Toshiba Corp スパッタリングターゲットおよび電気配線用合金膜
JP2643149B2 (ja) * 1987-06-03 1997-08-20 株式会社ブリヂストン 表面処理方法
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
DE3727901A1 (de) * 1987-08-21 1989-03-02 Leybold Ag Zerstaeubungskathode nach dem magnetronprinzip
US4865710A (en) * 1988-03-31 1989-09-12 Wisconsin Alumni Research Foundation Magnetron with flux switching cathode and method of operation
DE3825788A1 (de) * 1988-07-29 1990-02-01 Philips Patentverwaltung Verfahren zur herstellung von eisengranatschichten
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US5126028A (en) * 1989-04-17 1992-06-30 Materials Research Corporation Sputter coating process control method and apparatus
US5698312A (en) * 1990-03-22 1997-12-16 Fuji Photo Film Co., Ltd. Magneto-optical recording medium and method for making the same
DE4018914C1 (de) * 1990-06-13 1991-06-06 Leybold Ag, 6450 Hanau, De
US5427665A (en) * 1990-07-11 1995-06-27 Leybold Aktiengesellschaft Process and apparatus for reactive coating of a substrate
US5344718A (en) * 1992-04-30 1994-09-06 Guardian Industries Corp. High performance, durable, low-E glass
US5922176A (en) * 1992-06-12 1999-07-13 Donnelly Corporation Spark eliminating sputtering target and method for using and making same
US5416048A (en) * 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
US6565721B1 (en) * 1996-04-04 2003-05-20 Micron Technology, Inc. Use of heavy halogens for enhanced facet etching
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
JP3041413B2 (ja) * 1997-03-10 2000-05-15 工業技術院長 レーヤードアルミニウム微粒子の生成法及びその応用
US6342131B1 (en) * 1998-04-17 2002-01-29 Kabushiki Kaisha Toshiba Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field
US20050214458A1 (en) * 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US20060062910A1 (en) * 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
TWI383063B (zh) * 2004-03-01 2013-01-21 Praxair Technology Inc 低鋯之鹵化鉿組成物
US20060207872A1 (en) * 2005-03-21 2006-09-21 Sergey Mishin Dual magnetron thin film deposition system
JP4965835B2 (ja) * 2005-03-25 2012-07-04 キヤノン株式会社 構造体、その製造方法、及び該構造体を用いたデバイス
BRPI0711644B1 (pt) * 2006-05-16 2019-03-19 Oerlikon Trading Ag, Trübbach Fonte de arco voltaico com um alvo e processo para a produção de peças revestidas por arco voltaico
US20080121515A1 (en) * 2006-11-27 2008-05-29 Seagate Technology Llc Magnetron sputtering utilizing halbach magnet arrays
US20150345010A1 (en) * 2013-09-30 2015-12-03 University Of Dayton Methods of magnetically enhanced physical vapor deposition

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
US4111782A (en) * 1974-12-23 1978-09-05 Telic Corporation Sputtering apparatus
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
US4155825A (en) * 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4175030A (en) * 1977-12-08 1979-11-20 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
US4162954A (en) * 1978-08-21 1979-07-31 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4180450A (en) * 1978-08-21 1979-12-25 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4265729A (en) * 1978-09-27 1981-05-05 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
US4309266A (en) * 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus

Also Published As

Publication number Publication date
EP0070574B1 (de) 1986-08-27
US4444635A (en) 1984-04-24
EP0070574A1 (de) 1983-01-26

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Legal Events

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8364 No opposition during term of opposition