DE3272669D1 - Plasma-reactor and its use in etching and coating substrates - Google Patents
Plasma-reactor and its use in etching and coating substratesInfo
- Publication number
- DE3272669D1 DE3272669D1 DE8282102224T DE3272669T DE3272669D1 DE 3272669 D1 DE3272669 D1 DE 3272669D1 DE 8282102224 T DE8282102224 T DE 8282102224T DE 3272669 T DE3272669 T DE 3272669T DE 3272669 D1 DE3272669 D1 DE 3272669D1
- Authority
- DE
- Germany
- Prior art keywords
- reactor
- etching
- plasma
- coating substrates
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP82102224A EP0089382B1 (de) | 1982-03-18 | 1982-03-18 | Plasmareaktor und seine Anwendung beim Ätzen und Beschichten von Substraten |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3272669D1 true DE3272669D1 (en) | 1986-09-25 |
Family
ID=8188928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282102224T Expired DE3272669D1 (en) | 1982-03-18 | 1982-03-18 | Plasma-reactor and its use in etching and coating substrates |
Country Status (4)
Country | Link |
---|---|
US (1) | US4461237A (de) |
EP (1) | EP0089382B1 (de) |
JP (1) | JPS58168236A (de) |
DE (1) | DE3272669D1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947732A (ja) * | 1982-09-10 | 1984-03-17 | Hitachi Ltd | 半導体製造装置 |
US4576698A (en) * | 1983-06-30 | 1986-03-18 | International Business Machines Corporation | Plasma etch cleaning in low pressure chemical vapor deposition systems |
DE3402971A1 (de) * | 1984-01-28 | 1985-08-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung |
US4681653A (en) * | 1984-06-01 | 1987-07-21 | Texas Instruments Incorporated | Planarized dielectric deposited using plasma enhanced chemical vapor deposition |
US4630566A (en) * | 1984-08-16 | 1986-12-23 | Board Of Trustees Operating Michigan State University | Microwave or UHF plasma improved apparatus |
US4762728A (en) * | 1985-04-09 | 1988-08-09 | Fairchild Semiconductor Corporation | Low temperature plasma nitridation process and applications of nitride films formed thereby |
US4657616A (en) * | 1985-05-17 | 1987-04-14 | Benzing Technologies, Inc. | In-situ CVD chamber cleaner |
JP2793821B2 (ja) * | 1988-11-22 | 1998-09-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5089083A (en) * | 1989-04-25 | 1992-02-18 | Tokyo Electron Limited | Plasma etching method |
US5032202A (en) * | 1989-10-03 | 1991-07-16 | Martin Marietta Energy Systems, Inc. | Plasma generating apparatus for large area plasma processing |
US5298720A (en) * | 1990-04-25 | 1994-03-29 | International Business Machines Corporation | Method and apparatus for contamination control in processing apparatus containing voltage driven electrode |
EP0462730A1 (de) * | 1990-06-18 | 1991-12-27 | AT&T Corp. | Verfahren und Vorrichtung zur Herstellung planarer Schichten für integrierte Schaltungen |
JP3042127B2 (ja) * | 1991-09-02 | 2000-05-15 | 富士電機株式会社 | 酸化シリコン膜の製造方法および製造装置 |
KR100829288B1 (ko) * | 1998-12-11 | 2008-05-13 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마 처리장치 |
JP4454781B2 (ja) * | 2000-04-18 | 2010-04-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20020185226A1 (en) * | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
WO2006009881A2 (en) * | 2004-06-18 | 2006-01-26 | Innovalight, Inc. | Process and apparatus for forming nanoparticles using radiofrequency plasmas |
DE102005029317A1 (de) * | 2005-06-22 | 2006-12-28 | Linde Ag | Vorrichtung zum Einleiten von Stoffen in einen Reaktionsraum |
DE102007047629A1 (de) * | 2007-04-13 | 2008-10-16 | Stein, Ralf | Verfahren zum Aufbringen einer hochfesten Beschichtung auf Werkstücke und/oder Werkstoffe |
JP6348321B2 (ja) * | 2013-05-17 | 2018-06-27 | キヤノンアネルバ株式会社 | エッチング装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
SE7700229L (sv) * | 1976-01-22 | 1977-07-23 | Western Electric Co | Forfarande for beleggning av substrat genom utfellning fran ett plasma |
IT1203089B (it) * | 1976-03-03 | 1989-02-15 | Int Plasma Corp | Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma |
DD135091A1 (de) * | 1978-03-29 | 1979-04-11 | Lothar Reissmueller | Einrichtung zum beschichten durch hochratezerstaeubung mit dem plasmatron |
US4230515A (en) * | 1978-07-27 | 1980-10-28 | Davis & Wilder, Inc. | Plasma etching apparatus |
JPS5562734A (en) * | 1978-11-01 | 1980-05-12 | Toshiba Corp | Ion source and ion etching method |
DD142568A1 (de) * | 1979-03-22 | 1980-07-02 | Harald Bilz | EINRICHTUNG ZUM REAKTIVEN BESCHICHTEN MIT DEM PLASM&TRON |
US4341593A (en) * | 1979-08-17 | 1982-07-27 | Tokuda Seisakusyo, Ltd. | Plasma etching method for aluminum-based films |
US4333814A (en) * | 1979-12-26 | 1982-06-08 | Western Electric Company, Inc. | Methods and apparatus for improving an RF excited reactive gas plasma |
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
-
1982
- 1982-03-18 DE DE8282102224T patent/DE3272669D1/de not_active Expired
- 1982-03-18 EP EP82102224A patent/EP0089382B1/de not_active Expired
-
1983
- 1983-03-11 JP JP58039325A patent/JPS58168236A/ja active Granted
- 1983-03-17 US US06/476,290 patent/US4461237A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0089382B1 (de) | 1986-08-20 |
JPS58168236A (ja) | 1983-10-04 |
US4461237A (en) | 1984-07-24 |
JPH0213810B2 (de) | 1990-04-05 |
EP0089382A1 (de) | 1983-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |