DE3268140D1 - A method of forming a patterned photoresist layer - Google Patents

A method of forming a patterned photoresist layer

Info

Publication number
DE3268140D1
DE3268140D1 DE8282108257T DE3268140T DE3268140D1 DE 3268140 D1 DE3268140 D1 DE 3268140D1 DE 8282108257 T DE8282108257 T DE 8282108257T DE 3268140 T DE3268140 T DE 3268140T DE 3268140 D1 DE3268140 D1 DE 3268140D1
Authority
DE
Germany
Prior art keywords
forming
photoresist layer
patterned photoresist
patterned
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282108257T
Other languages
English (en)
Inventor
Joachim Bargon
Hiroyuki Hiraoka
Lawrence William Welsh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3268140D1 publication Critical patent/DE3268140D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE8282108257T 1981-12-14 1982-09-08 A method of forming a patterned photoresist layer Expired DE3268140D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/330,103 US4389482A (en) 1981-12-14 1981-12-14 Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light

Publications (1)

Publication Number Publication Date
DE3268140D1 true DE3268140D1 (en) 1986-02-06

Family

ID=23288323

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282108257T Expired DE3268140D1 (en) 1981-12-14 1982-09-08 A method of forming a patterned photoresist layer

Country Status (4)

Country Link
US (1) US4389482A (de)
EP (1) EP0081633B1 (de)
JP (1) JPS58115435A (de)
DE (1) DE3268140D1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2121197A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
US4572890A (en) * 1983-05-11 1986-02-25 Ciba-Geigy Corporation Process for the production of images
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
DE3446074A1 (de) * 1984-12-18 1986-06-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur herstellung von roentgen-resists
EP0238690B1 (de) * 1986-03-27 1991-11-06 International Business Machines Corporation Verfahren zur Herstellung von Seitenstrukturen
DE3701569A1 (de) * 1987-01-21 1988-08-04 Basf Ag Copolymerisate mit o-nitrocarbinolestergruppierungen, deren verwendung sowie verfahren zur herstellung von halbleiterbauelementen
JP2506800B2 (ja) * 1987-07-31 1996-06-12 松下電子工業株式会社 レジストパタ−ンの形成方法
EP0396538A4 (en) * 1988-01-13 1990-12-27 Eastman Kodak Company Method of making a thin lens
JPH02251961A (ja) * 1989-03-27 1990-10-09 Matsushita Electric Ind Co Ltd パターン形成方法
US5061604A (en) * 1990-05-04 1991-10-29 Minnesota Mining And Manufacturing Company Negative crystalline photoresists for UV photoimaging
US5079130A (en) * 1990-05-25 1992-01-07 At&T Bell Laboratories Partially or fully recessed microlens fabrication
EP0524759A1 (de) * 1991-07-23 1993-01-27 AT&T Corp. Verfahren zur Herstellung einer Vorrichtung
EP1228528B1 (de) 1999-09-10 2014-08-13 Oerlikon USA Inc. Prozess und anordnung zur herstellung magnetischer pole
US6547975B1 (en) 1999-10-29 2003-04-15 Unaxis Usa Inc. Magnetic pole fabrication process and device
US20070259457A1 (en) * 2006-05-04 2007-11-08 Texas Instruments Optical endpoint detection of planarization
JP5850353B2 (ja) 2011-08-18 2016-02-03 アップル インコーポレイテッド 陽極酸化及びめっき表面処理
US9683305B2 (en) 2011-12-20 2017-06-20 Apple Inc. Metal surface and process for treating a metal surface

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2887376A (en) * 1956-01-26 1959-05-19 Eastman Kodak Co Photographic reproduction process using light-sensitive polymers
GB1328803A (en) * 1969-12-17 1973-09-05 Mullard Ltd Methods of manufacturing semiconductor devices
US3914462A (en) * 1971-06-04 1975-10-21 Hitachi Ltd Method for forming a resist mask using a positive electron resist
BE791212A (fr) * 1972-02-03 1973-03-01 Buckbee Mears Co Procede pour le durcissement des reserves
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
US3984582A (en) * 1975-06-30 1976-10-05 Ibm Method for preparing positive resist image
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization
US4080246A (en) * 1976-06-29 1978-03-21 Gaf Corporation Novel etching composition and method for using same
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
US4184909A (en) * 1978-08-21 1980-01-22 International Business Machines Corporation Method of forming thin film interconnection systems
JPS5553328A (en) * 1978-10-17 1980-04-18 Oki Electric Ind Co Ltd Production of integrated circuit element
JPS5569265A (en) * 1978-11-15 1980-05-24 Hitachi Ltd Pattern-forming method
JPS6053867B2 (ja) * 1979-09-12 1985-11-27 沖電気工業株式会社 ネガ型フオトレジストパタ−ンの形成方法
JPS56100417A (en) * 1980-01-16 1981-08-12 Fujitsu Ltd Forming method for resist pattern
EP0064864B1 (de) * 1981-05-07 1989-12-13 Honeywell Inc. Verfahren zur Herstellung von empfindlichen positiven Elektronenstrahlresists

Also Published As

Publication number Publication date
EP0081633A1 (de) 1983-06-22
JPH0216911B2 (de) 1990-04-18
EP0081633B1 (de) 1985-12-27
US4389482A (en) 1983-06-21
JPS58115435A (ja) 1983-07-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee