DE3265338D1 - Semiconductor laser having at least two radiation beams, and method of manufacturing same - Google Patents

Semiconductor laser having at least two radiation beams, and method of manufacturing same

Info

Publication number
DE3265338D1
DE3265338D1 DE8282200293T DE3265338T DE3265338D1 DE 3265338 D1 DE3265338 D1 DE 3265338D1 DE 8282200293 T DE8282200293 T DE 8282200293T DE 3265338 T DE3265338 T DE 3265338T DE 3265338 D1 DE3265338 D1 DE 3265338D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
manufacturing same
radiation beams
beams
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282200293T
Other languages
English (en)
Inventor
Ruyven Lodewijk Johan Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3265338D1 publication Critical patent/DE3265338D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
DE8282200293T 1981-03-23 1982-03-08 Semiconductor laser having at least two radiation beams, and method of manufacturing same Expired DE3265338D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8101409A NL8101409A (nl) 1981-03-23 1981-03-23 Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
DE3265338D1 true DE3265338D1 (en) 1985-09-19

Family

ID=19837208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282200293T Expired DE3265338D1 (en) 1981-03-23 1982-03-08 Semiconductor laser having at least two radiation beams, and method of manufacturing same

Country Status (7)

Country Link
US (1) US4476563A (de)
EP (1) EP0061220B1 (de)
JP (1) JPS57169291A (de)
CA (1) CA1173549A (de)
DE (1) DE3265338D1 (de)
IE (1) IE53373B1 (de)
NL (1) NL8101409A (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
NL8200414A (nl) * 1982-02-04 1983-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.
FR2525033B1 (fr) * 1982-04-08 1986-01-17 Bouadma Noureddine Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation
US4517667A (en) * 1982-06-10 1985-05-14 Xerox Corporation Direct read after write optical disk system
US4603421A (en) * 1982-11-24 1986-07-29 Xerox Corporation Incoherent composite multi-emitter laser for an optical arrangement
JPS59123289A (ja) * 1982-12-28 1984-07-17 Matsushita Electric Ind Co Ltd 半導体レ−ザアレイ装置
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
US4747110A (en) * 1985-02-13 1988-05-24 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device capable of emitting laser beams of different wavelengths
US4740978A (en) * 1985-03-14 1988-04-26 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Integrated quantum well lasers having uniform thickness lasing regions for wavelength multiplexing
JPS61287289A (ja) * 1985-06-14 1986-12-17 Sharp Corp 光メモリ用半導体レ−ザ装置
JPS6395682A (ja) * 1986-10-09 1988-04-26 Mitsubishi Electric Corp 端面発光素子
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
US4843031A (en) * 1987-03-17 1989-06-27 Matsushita Electric Industrial Co., Ltd. Method of fabricating compound semiconductor laser using selective irradiation
JPH0620154B2 (ja) * 1988-03-05 1994-03-16 鐘淵化学工業株式会社 半導体装置の製法
JP2686764B2 (ja) * 1988-03-11 1997-12-08 国際電信電話株式会社 光半導体素子の製造方法
US5038185A (en) * 1989-11-30 1991-08-06 Xerox Corporation Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
US5048040A (en) * 1990-03-08 1991-09-10 Xerox Corporation Multiple wavelength p-n junction semiconductor laser with separated waveguides
US5071786A (en) * 1990-03-08 1991-12-10 Xerox Corporation Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides
FR2684237B1 (fr) * 1991-11-22 1993-12-24 Thomson Hybrides Circuit integre de lasers semiconducteurs et procede de realisation de ce circuit.
JPH0696468A (ja) * 1992-09-14 1994-04-08 Canon Inc 光記録再生装置及び半導体レーザアレイ
US5319655A (en) * 1992-12-21 1994-06-07 Xerox Corporation Multiwavelength laterally-injecting-type lasers
JP2004328011A (ja) * 1998-12-22 2004-11-18 Sony Corp 半導体発光装置の製造方法
JP4821829B2 (ja) * 1998-12-22 2011-11-24 ソニー株式会社 半導体発光装置の製造方法
KR100988083B1 (ko) * 2003-06-03 2010-10-18 삼성전자주식회사 반도체 레이저 소자
US7310358B2 (en) * 2004-12-17 2007-12-18 Palo Alto Research Center Incorporated Semiconductor lasers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751276B2 (de) * 1973-10-23 1982-11-01
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
US4199385A (en) * 1977-09-21 1980-04-22 International Business Machines Corporation Method of making an optically isolated monolithic light emitting diode array utilizing epitaxial deposition of graded layers and selective diffusion
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
JPS54107689A (en) * 1978-02-10 1979-08-23 Nec Corp Semiconductor laser element
JPS55165691A (en) * 1979-06-13 1980-12-24 Nec Corp Compound semiconductor laser element
US4280108A (en) * 1979-07-12 1981-07-21 Xerox Corporation Transverse junction array laser

Also Published As

Publication number Publication date
IE53373B1 (en) 1988-10-26
NL8101409A (nl) 1982-10-18
EP0061220B1 (de) 1985-08-14
CA1173549A (en) 1984-08-28
JPS57169291A (en) 1982-10-18
EP0061220A1 (de) 1982-09-29
IE820653L (en) 1982-09-23
US4476563A (en) 1984-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee