DE3160193D1 - Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices - Google Patents

Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices

Info

Publication number
DE3160193D1
DE3160193D1 DE8181400880T DE3160193T DE3160193D1 DE 3160193 D1 DE3160193 D1 DE 3160193D1 DE 8181400880 T DE8181400880 T DE 8181400880T DE 3160193 T DE3160193 T DE 3160193T DE 3160193 D1 DE3160193 D1 DE 3160193D1
Authority
DE
Germany
Prior art keywords
silicon
manufacturing
application
photoelectric conversion
containing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181400880T
Other languages
English (en)
Inventor
Daniel Kaplan
Pierre Landouar
Eric Criton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3160193D1 publication Critical patent/DE3160193D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System including AIVBIV alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE8181400880T 1980-06-24 1981-06-02 Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices Expired DE3160193D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8013968A FR2485810A1 (fr) 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede

Publications (1)

Publication Number Publication Date
DE3160193D1 true DE3160193D1 (en) 1983-05-26

Family

ID=9243446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181400880T Expired DE3160193D1 (en) 1980-06-24 1981-06-02 Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices

Country Status (6)

Country Link
US (1) US4344984A (de)
EP (1) EP0042773B1 (de)
JP (1) JPS5731182A (de)
KR (1) KR840002468B1 (de)
DE (1) DE3160193D1 (de)
FR (1) FR2485810A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103649A (nl) * 1981-08-03 1983-03-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
WO2000003061A1 (en) * 1998-07-09 2000-01-20 Applied Materials, Inc. Method and apparatus for forming amorphous and polycrystalline silicon germanium alloy films
GB2442198B (en) * 2006-09-29 2011-06-29 Alan Frederick Sandy Toilet Device
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US9283287B2 (en) 2012-04-02 2016-03-15 Moderna Therapeutics, Inc. Modified polynucleotides for the production of nuclear proteins

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur

Also Published As

Publication number Publication date
FR2485810A1 (fr) 1981-12-31
EP0042773B1 (de) 1983-04-20
KR830006827A (ko) 1983-10-06
US4344984A (en) 1982-08-17
EP0042773A1 (de) 1981-12-30
FR2485810B1 (de) 1984-01-13
KR840002468B1 (ko) 1984-12-29
JPS5731182A (en) 1982-02-19

Similar Documents

Publication Publication Date Title
GB2133213B (en) Photoelectric conversion device and method of manufacturing the same
DE3072023D1 (en) Method to make a silicon layer being partly polycrystalline and partly monocrystalline
JPS54144407A (en) Method of manufacturing large honeycomb structure
JPS554994A (en) Solar battery and method of manufacturing same
DE3164132D1 (en) Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
DE3166967D1 (en) Method of making josephson junction devices
DE3160193D1 (en) Method of manufacturing a silicon-containing layer and its application to photoelectric conversion devices
GB2081010B (en) Semiconductor device with a pn junction and its method of manufacture
MY8500674A (en) Method of manufacturing semiconductor devices
DE3276556D1 (en) Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device
JPS5658276A (en) Photoelectric conversion head and method of manufacturing same
JPS56107558A (en) Method of forming passivation layer
JPS54155782A (en) Method of fabricating semiconductor
JPS54115085A (en) Method of fabricating semiconductor
GB2015634B (en) Method and a device to secure a sealing layer to a support
JPS54107275A (en) Method of fabricating semiconductor
DE2961365D1 (en) Method of manufacturing a semiconductor device
GB2117176B (en) Photoelectronic conversion device and method of producing same
JPS5580369A (en) Selenium photoelectric device and method of fabricating same
GB2133617B (en) Photoelectric conversion device and method of manufacture
JPS56104477A (en) Amorphous semiconductor equivalent to crystalline semiconductor and method of manufacturing same
GB2012484B (en) Method of fabricating a semiconductor device
DE3166898D1 (en) Photoelectric conversion device and method of producing the same
GB2030999B (en) Method of bonding a silicone rubber to a substrate surface
JPS5559787A (en) Method of manufacturing semiconductor element having photoelectric converting characteristic

Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Free format text: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING. SCHWEPFINGER, K., DIPL.-ING., 8000 MUENCHEN BUNKE, M., DIPL.-ING., 7000 STUTTGART BUNKE, H., DIPL.-CHEM. DR.RER.NAT. DEGWERT, H., DIPL.-PHYS., PAT.-ANW., 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee