DE3071336D1 - Ohmic contact to p-type inp or ingaasp - Google Patents

Ohmic contact to p-type inp or ingaasp

Info

Publication number
DE3071336D1
DE3071336D1 DE8080901830T DE3071336T DE3071336D1 DE 3071336 D1 DE3071336 D1 DE 3071336D1 DE 8080901830 T DE8080901830 T DE 8080901830T DE 3071336 T DE3071336 T DE 3071336T DE 3071336 D1 DE3071336 D1 DE 3071336D1
Authority
DE
Germany
Prior art keywords
ingaasp
ohmic contact
type inp
inp
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080901830T
Other languages
English (en)
Inventor
Vassilis George Keramidas
Robert Jackson Mccoy
Henryk Temkin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3071336D1 publication Critical patent/DE3071336D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/452Ohmic electrodes on AIII-BV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
DE8080901830T 1979-09-27 1980-08-22 Ohmic contact to p-type inp or ingaasp Expired DE3071336D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/079,451 US4366186A (en) 1979-09-27 1979-09-27 Ohmic contact to p-type InP
PCT/US1980/001079 WO1981000932A1 (en) 1979-09-27 1980-08-22 Ohmic contact to p-type inp or ingaasp

Publications (1)

Publication Number Publication Date
DE3071336D1 true DE3071336D1 (en) 1986-02-20

Family

ID=22150652

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080901830T Expired DE3071336D1 (en) 1979-09-27 1980-08-22 Ohmic contact to p-type inp or ingaasp

Country Status (5)

Country Link
US (1) US4366186A (de)
EP (1) EP0037401B1 (de)
JP (1) JPH0139206B2 (de)
DE (1) DE3071336D1 (de)
WO (1) WO1981000932A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
US4471005A (en) * 1983-01-24 1984-09-11 At&T Bell Laboratories Ohmic contact to p-type Group III-V semiconductors
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
US5015603A (en) * 1988-06-17 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy TiW diffusion barrier for AuZn ohmic contact to P-Type InP
US5036023A (en) * 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
JPH03137081A (ja) * 1989-10-23 1991-06-11 Sumitomo Electric Ind Ltd p型cBNのオーム性電極形成方法
US5240877A (en) * 1989-11-28 1993-08-31 Sumitomo Electric Industries, Ltd. Process for manufacturing an ohmic electrode for n-type cubic boron nitride
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd n型立方晶窒化硼素のオーム性電極及びその形成方法
JPH04154511A (ja) * 1990-10-15 1992-05-27 Kawasaki Steel Corp リングの包装方法と包装装置
US5100835A (en) * 1991-03-18 1992-03-31 Eastman Kodak Company Shallow ohmic contacts to N-GaAs
TW456058B (en) * 2000-08-10 2001-09-21 United Epitaxy Co Ltd Light emitting diode and the manufacturing method thereof
US9065010B2 (en) * 2011-06-28 2015-06-23 Universal Display Corporation Non-planar inorganic optoelectronic device fabrication

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies
NL132844C (de) * 1961-04-14
US3942244A (en) * 1967-11-24 1976-03-09 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. Semiconductor element
US3598997A (en) * 1968-07-05 1971-08-10 Gen Electric Schottky barrier atomic particle and x-ray detector
US3620847A (en) * 1969-05-05 1971-11-16 Us Air Force Silicon solar cell array hardened to space nuclear blast radiation
US3616406A (en) * 1969-11-03 1971-10-26 Bell Telephone Labor Inc Preparation of glue layer for bonding gold to a substrate
CA926030A (en) * 1970-05-05 1973-05-08 Mayer Alfred Connections for high temperature power rectifier
US3768151A (en) * 1970-11-03 1973-10-30 Ibm Method of forming ohmic contacts to semiconductors
US3850688A (en) * 1971-12-29 1974-11-26 Gen Electric Ohmic contact for p-type group iii-v semiconductors
JPS539712B2 (de) * 1972-05-18 1978-04-07
FR2230078B1 (de) * 1973-05-18 1977-07-29 Radiotechnique Compelec
US4022931A (en) * 1974-07-01 1977-05-10 Motorola, Inc. Process for making semiconductor device
US4011583A (en) * 1974-09-03 1977-03-08 Bell Telephone Laboratories, Incorporated Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
US4068022A (en) * 1974-12-10 1978-01-10 Western Electric Company, Inc. Methods of strengthening bonds
JPS51146180A (en) * 1975-06-11 1976-12-15 Mitsubishi Electric Corp Iii-v family compound semi-conductor electric pole formation
US4064621A (en) * 1976-09-16 1977-12-27 General Motors Corporation Cadmium diffused Pb1-x Snx Te diode laser
JPS5950106B2 (ja) * 1976-10-15 1984-12-06 株式会社東芝 半導体素子の電極構造
GB1574525A (en) * 1977-04-13 1980-09-10 Philips Electronic Associated Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method
US4258375A (en) * 1979-04-09 1981-03-24 Massachusetts Institute Of Technology Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication
US4260429A (en) * 1980-05-19 1981-04-07 Ses, Incorporated Electrode for photovoltaic cell

Also Published As

Publication number Publication date
JPH0139206B2 (de) 1989-08-18
EP0037401A1 (de) 1981-10-14
US4366186A (en) 1982-12-28
WO1981000932A1 (en) 1981-04-02
EP0037401B1 (de) 1986-01-08
EP0037401A4 (de) 1983-07-26
JPS56501227A (de) 1981-08-27

Similar Documents

Publication Publication Date Title
JPS52136380A (en) Connector assembly
JPS555691A (en) Clasp knife
GB2037200B (en) Epitaxial solidification
JPS532203A (en) Tiller
JPS52113438A (en) Connector assembly
JPS54160256A (en) Electrochromatic element
JPS5572427A (en) Seat
DE3071336D1 (en) Ohmic contact to p-type inp or ingaasp
GB2021858A (en) Ohmic contact to group iii-v semiconductors
GB1555697A (en) Wiper blade assemblies
GB2022403B (en) Seat
AU2600277A (en) Hitch link assembly
GB2019670B (en) Female electrical contact elements
JPS539389A (en) Improvement concerning to enzyme insolubulization
GB2016814B (en) Contactor
PT66666B (en) Seated-operator type tractor
GB2024739B (en) Tractors
GB2035717B (en) Electrical contact assemblies
JPS52121236A (en) Wiper
YU29379A (en) Relay with time dependence
JPS5591512A (en) Contactor
JPS5323439A (en) Fronttglass wiper
JPS5323074A (en) Contact tank breaker
JPS5352981A (en) Contact tank breaker
DE2965987D1 (en) Improved electroencephalograph

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN