DE3071336D1 - Ohmic contact to p-type inp or ingaasp - Google Patents
Ohmic contact to p-type inp or ingaaspInfo
- Publication number
- DE3071336D1 DE3071336D1 DE8080901830T DE3071336T DE3071336D1 DE 3071336 D1 DE3071336 D1 DE 3071336D1 DE 8080901830 T DE8080901830 T DE 8080901830T DE 3071336 T DE3071336 T DE 3071336T DE 3071336 D1 DE3071336 D1 DE 3071336D1
- Authority
- DE
- Germany
- Prior art keywords
- ingaasp
- ohmic contact
- type inp
- inp
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/079,451 US4366186A (en) | 1979-09-27 | 1979-09-27 | Ohmic contact to p-type InP |
PCT/US1980/001079 WO1981000932A1 (en) | 1979-09-27 | 1980-08-22 | Ohmic contact to p-type inp or ingaasp |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3071336D1 true DE3071336D1 (en) | 1986-02-20 |
Family
ID=22150652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8080901830T Expired DE3071336D1 (en) | 1979-09-27 | 1980-08-22 | Ohmic contact to p-type inp or ingaasp |
Country Status (5)
Country | Link |
---|---|
US (1) | US4366186A (de) |
EP (1) | EP0037401B1 (de) |
JP (1) | JPH0139206B2 (de) |
DE (1) | DE3071336D1 (de) |
WO (1) | WO1981000932A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4414561A (en) * | 1979-09-27 | 1983-11-08 | Bell Telephone Laboratories, Incorporated | Beryllium-gold ohmic contact to a semiconductor device |
US4471005A (en) * | 1983-01-24 | 1984-09-11 | At&T Bell Laboratories | Ohmic contact to p-type Group III-V semiconductors |
US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
US5015603A (en) * | 1988-06-17 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | TiW diffusion barrier for AuZn ohmic contact to P-Type InP |
US5036023A (en) * | 1989-08-16 | 1991-07-30 | At&T Bell Laboratories | Rapid thermal processing method of making a semiconductor device |
JPH03137081A (ja) * | 1989-10-23 | 1991-06-11 | Sumitomo Electric Ind Ltd | p型cBNのオーム性電極形成方法 |
US5240877A (en) * | 1989-11-28 | 1993-08-31 | Sumitomo Electric Industries, Ltd. | Process for manufacturing an ohmic electrode for n-type cubic boron nitride |
JPH03167877A (ja) * | 1989-11-28 | 1991-07-19 | Sumitomo Electric Ind Ltd | n型立方晶窒化硼素のオーム性電極及びその形成方法 |
JPH04154511A (ja) * | 1990-10-15 | 1992-05-27 | Kawasaki Steel Corp | リングの包装方法と包装装置 |
US5100835A (en) * | 1991-03-18 | 1992-03-31 | Eastman Kodak Company | Shallow ohmic contacts to N-GaAs |
TW456058B (en) * | 2000-08-10 | 2001-09-21 | United Epitaxy Co Ltd | Light emitting diode and the manufacturing method thereof |
US9065010B2 (en) * | 2011-06-28 | 2015-06-23 | Universal Display Corporation | Non-planar inorganic optoelectronic device fabrication |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3214654A (en) * | 1961-02-01 | 1965-10-26 | Rca Corp | Ohmic contacts to iii-v semiconductive compound bodies |
NL132844C (de) * | 1961-04-14 | |||
US3942244A (en) * | 1967-11-24 | 1976-03-09 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. | Semiconductor element |
US3598997A (en) * | 1968-07-05 | 1971-08-10 | Gen Electric | Schottky barrier atomic particle and x-ray detector |
US3620847A (en) * | 1969-05-05 | 1971-11-16 | Us Air Force | Silicon solar cell array hardened to space nuclear blast radiation |
US3616406A (en) * | 1969-11-03 | 1971-10-26 | Bell Telephone Labor Inc | Preparation of glue layer for bonding gold to a substrate |
CA926030A (en) * | 1970-05-05 | 1973-05-08 | Mayer Alfred | Connections for high temperature power rectifier |
US3768151A (en) * | 1970-11-03 | 1973-10-30 | Ibm | Method of forming ohmic contacts to semiconductors |
US3850688A (en) * | 1971-12-29 | 1974-11-26 | Gen Electric | Ohmic contact for p-type group iii-v semiconductors |
JPS539712B2 (de) * | 1972-05-18 | 1978-04-07 | ||
FR2230078B1 (de) * | 1973-05-18 | 1977-07-29 | Radiotechnique Compelec | |
US4022931A (en) * | 1974-07-01 | 1977-05-10 | Motorola, Inc. | Process for making semiconductor device |
US4011583A (en) * | 1974-09-03 | 1977-03-08 | Bell Telephone Laboratories, Incorporated | Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors |
US4068022A (en) * | 1974-12-10 | 1978-01-10 | Western Electric Company, Inc. | Methods of strengthening bonds |
JPS51146180A (en) * | 1975-06-11 | 1976-12-15 | Mitsubishi Electric Corp | Iii-v family compound semi-conductor electric pole formation |
US4064621A (en) * | 1976-09-16 | 1977-12-27 | General Motors Corporation | Cadmium diffused Pb1-x Snx Te diode laser |
JPS5950106B2 (ja) * | 1976-10-15 | 1984-12-06 | 株式会社東芝 | 半導体素子の電極構造 |
GB1574525A (en) * | 1977-04-13 | 1980-09-10 | Philips Electronic Associated | Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method |
US4258375A (en) * | 1979-04-09 | 1981-03-24 | Massachusetts Institute Of Technology | Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication |
US4260429A (en) * | 1980-05-19 | 1981-04-07 | Ses, Incorporated | Electrode for photovoltaic cell |
-
1979
- 1979-09-27 US US06/079,451 patent/US4366186A/en not_active Expired - Lifetime
-
1980
- 1980-08-22 JP JP55502160A patent/JPH0139206B2/ja not_active Expired
- 1980-08-22 DE DE8080901830T patent/DE3071336D1/de not_active Expired
- 1980-08-22 WO PCT/US1980/001079 patent/WO1981000932A1/en active IP Right Grant
-
1981
- 1981-04-08 EP EP80901830A patent/EP0037401B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPH0139206B2 (de) | 1989-08-18 |
EP0037401A1 (de) | 1981-10-14 |
US4366186A (en) | 1982-12-28 |
WO1981000932A1 (en) | 1981-04-02 |
EP0037401B1 (de) | 1986-01-08 |
EP0037401A4 (de) | 1983-07-26 |
JPS56501227A (de) | 1981-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |