DE3069319D1 - A method of manufacturing a semiconductor device having reduced leakage currents - Google Patents
A method of manufacturing a semiconductor device having reduced leakage currentsInfo
- Publication number
- DE3069319D1 DE3069319D1 DE8080107930T DE3069319T DE3069319D1 DE 3069319 D1 DE3069319 D1 DE 3069319D1 DE 8080107930 T DE8080107930 T DE 8080107930T DE 3069319 T DE3069319 T DE 3069319T DE 3069319 D1 DE3069319 D1 DE 3069319D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- leakage currents
- reduced leakage
- reduced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16621179A JPS5693367A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3069319D1 true DE3069319D1 (en) | 1984-10-31 |
Family
ID=15827153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8080107930T Expired DE3069319D1 (en) | 1979-12-20 | 1980-12-16 | A method of manufacturing a semiconductor device having reduced leakage currents |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4371403A (de) |
| EP (1) | EP0035598B1 (de) |
| JP (1) | JPS5693367A (de) |
| DE (1) | DE3069319D1 (de) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57126147A (en) * | 1981-01-28 | 1982-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4517729A (en) * | 1981-07-27 | 1985-05-21 | American Microsystems, Incorporated | Method for fabricating MOS device with self-aligned contacts |
| US4445270A (en) * | 1982-06-21 | 1984-05-01 | Rca Corporation | Low resistance contact for high density integrated circuit |
| US4476621A (en) * | 1983-02-01 | 1984-10-16 | Gte Communications Products Corporation | Process for making transistors with doped oxide densification |
| JPH061820B2 (ja) * | 1983-04-01 | 1994-01-05 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPS60501927A (ja) * | 1983-07-25 | 1985-11-07 | アメリカン テレフオン アンド テレグラフ カムパニ− | 浅い接合の半導体デバイス |
| JPS6031231A (ja) * | 1983-07-29 | 1985-02-18 | Toshiba Corp | 半導体基体の製造方法 |
| JPS6084813A (ja) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | 半導体装置の製造方法 |
| US4512073A (en) * | 1984-02-23 | 1985-04-23 | Rca Corporation | Method of forming self-aligned contact openings |
| US4603472A (en) * | 1984-04-19 | 1986-08-05 | Siemens Aktiengesellschaft | Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation |
| US4565710A (en) * | 1984-06-06 | 1986-01-21 | The United States Of America As Represented By The Secretary Of The Navy | Process for producing carbide coatings |
| FR2578096A1 (fr) * | 1985-02-28 | 1986-08-29 | Bull Sa | Procede de fabrication d'un transistor mos et dispositif a circuits integres en resultant |
| US4755479A (en) * | 1986-02-17 | 1988-07-05 | Fujitsu Limited | Manufacturing method of insulated gate field effect transistor using reflowable sidewall spacers |
| US4702000A (en) * | 1986-03-19 | 1987-10-27 | Harris Corporation | Technique for elimination of polysilicon stringers in direct moat field oxide structure |
| US4818725A (en) * | 1986-09-15 | 1989-04-04 | Harris Corp. | Technique for forming planarized gate structure |
| US4796073A (en) * | 1986-11-14 | 1989-01-03 | Burr-Brown Corporation | Front-surface N+ gettering techniques for reducing noise in integrated circuits |
| EP0350845A3 (de) * | 1988-07-12 | 1991-05-29 | Seiko Epson Corporation | Halbleiterbauelement mit dotierten Gebieten und Verfahren zu seiner Herstellung |
| US5654209A (en) * | 1988-07-12 | 1997-08-05 | Seiko Epson Corporation | Method of making N-type semiconductor region by implantation |
| US5194395A (en) * | 1988-07-28 | 1993-03-16 | Fujitsu Limited | Method of producing a substrate having semiconductor-on-insulator structure with gettering sites |
| JPH0237771A (ja) * | 1988-07-28 | 1990-02-07 | Fujitsu Ltd | Ｓｏｉ基板 |
| JPH0338044A (ja) * | 1989-07-05 | 1991-02-19 | Toshiba Corp | 半導体装置の製造方法 |
| US5108935A (en) * | 1990-11-16 | 1992-04-28 | Texas Instruments Incorporated | Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities |
| JP2546745B2 (ja) * | 1991-03-15 | 1996-10-23 | 信越半導体株式会社 | 半導体デバイスの製造方法 |
| US5244819A (en) * | 1991-10-22 | 1993-09-14 | Honeywell Inc. | Method to getter contamination in semiconductor devices |
| US5416348A (en) * | 1993-07-15 | 1995-05-16 | Micron Semiconductor, Inc. | Current leakage reduction at the storage node diffusion region of a stacked-trench DRAM cell by selectively oxidizing the floor of the trench |
| US5453385A (en) * | 1993-08-27 | 1995-09-26 | Goldstar Electron Co., Ltd. | Method for manufacturing silicon semiconductor device with a gettering site |
| US5393676A (en) * | 1993-09-22 | 1995-02-28 | Advanced Micro Devices, Inc. | Method of fabricating semiconductor gate electrode with fluorine migration barrier |
| GB9326344D0 (en) * | 1993-12-23 | 1994-02-23 | Texas Instruments Ltd | High voltage transistor for sub micron cmos processes |
| JP4056571B2 (ja) * | 1995-08-02 | 2008-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6077778A (en) * | 1997-04-17 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Method of improving refresh time in DRAM products |
| US6709955B2 (en) * | 2000-04-17 | 2004-03-23 | Stmicroelectronics S.R.L. | Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method |
| US7045444B2 (en) * | 2000-12-19 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| US6858480B2 (en) * | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TWI221645B (en) * | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US6444534B1 (en) * | 2001-01-30 | 2002-09-03 | Advanced Micro Devices, Inc. | SOI semiconductor device opening implantation gettering method |
| JP2002231627A (ja) * | 2001-01-30 | 2002-08-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
| US7141822B2 (en) * | 2001-02-09 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5088993B2 (ja) | 2001-02-16 | 2012-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4993810B2 (ja) | 2001-02-16 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7052943B2 (en) | 2001-03-16 | 2006-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP4718700B2 (ja) | 2001-03-16 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6812081B2 (en) * | 2001-03-26 | 2004-11-02 | Semiconductor Energy Laboratory Co.,.Ltd. | Method of manufacturing semiconductor device |
| US6958264B1 (en) | 2001-04-03 | 2005-10-25 | Advanced Micro Devices, Inc. | Scribe lane for gettering of contaminants on SOI wafers and gettering method |
| US7374976B2 (en) * | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
| JP2014033212A (ja) * | 2013-09-13 | 2014-02-20 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP6316981B2 (ja) * | 2014-11-05 | 2018-04-25 | 国立研究開発法人科学技術振興機構 | ゲルマニウム層をチャネル領域とする半導体装置およびその製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2191272A1 (de) * | 1972-06-27 | 1974-02-01 | Ibm France | |
| US3933530A (en) * | 1975-01-28 | 1976-01-20 | Rca Corporation | Method of radiation hardening and gettering semiconductor devices |
| US4061506A (en) * | 1975-05-01 | 1977-12-06 | Texas Instruments Incorporated | Correcting doping defects |
| US4069068A (en) * | 1976-07-02 | 1978-01-17 | International Business Machines Corporation | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions |
| US4114256A (en) * | 1977-06-24 | 1978-09-19 | Bell Telephone Laboratories, Incorporated | Reliable metal-to-junction contacts in large-scale-integrated devices |
| US4133701A (en) * | 1977-06-29 | 1979-01-09 | General Motors Corporation | Selective enhancement of phosphorus diffusion by implanting halogen ions |
| US4149904A (en) * | 1977-10-21 | 1979-04-17 | Ncr Corporation | Method for forming ion-implanted self-aligned gate structure by controlled ion scattering |
| JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
-
1979
- 1979-12-20 JP JP16621179A patent/JPS5693367A/ja active Granted
-
1980
- 1980-12-16 EP EP80107930A patent/EP0035598B1/de not_active Expired
- 1980-12-16 DE DE8080107930T patent/DE3069319D1/de not_active Expired
- 1980-12-18 US US06/217,756 patent/US4371403A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0035598B1 (de) | 1984-09-26 |
| JPS6260818B2 (de) | 1987-12-18 |
| EP0035598A2 (de) | 1981-09-16 |
| EP0035598A3 (en) | 1982-08-11 |
| US4371403A (en) | 1983-02-01 |
| JPS5693367A (en) | 1981-07-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8339 | Ceased/non-payment of the annual fee |