DE2861533D1 - Semiconductor device for resistance structures in high-density integrated circuits and method for making it - Google Patents
Semiconductor device for resistance structures in high-density integrated circuits and method for making itInfo
- Publication number
- DE2861533D1 DE2861533D1 DE7878101028T DE2861533T DE2861533D1 DE 2861533 D1 DE2861533 D1 DE 2861533D1 DE 7878101028 T DE7878101028 T DE 7878101028T DE 2861533 T DE2861533 T DE 2861533T DE 2861533 D1 DE2861533 D1 DE 2861533D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- semiconductor device
- integrated circuits
- density integrated
- resistance structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/844,768 US4228450A (en) | 1977-10-25 | 1977-10-25 | Buried high sheet resistance structure for high density integrated circuits with reach through contacts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2861533D1 true DE2861533D1 (en) | 1982-02-25 |
Family
ID=25293580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE7878101028T Expired DE2861533D1 (en) | 1977-10-25 | 1978-09-29 | Semiconductor device for resistance structures in high-density integrated circuits and method for making it |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4228450A (de) |
| EP (1) | EP0001574B1 (de) |
| JP (1) | JPS5466087A (de) |
| CA (1) | CA1102011A (de) |
| DE (1) | DE2861533D1 (de) |
| IT (1) | IT1159142B (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55138267A (en) * | 1979-04-12 | 1980-10-28 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor integrated circuit containing resistance element |
| JPS5632762A (en) * | 1979-08-27 | 1981-04-02 | Fujitsu Ltd | Semiconductor device |
| US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
| JPS58103169A (ja) * | 1981-12-15 | 1983-06-20 | Matsushita Electric Ind Co Ltd | 半導体可変抵抗素子 |
| JPS58127363A (ja) * | 1982-01-25 | 1983-07-29 | Hitachi Ltd | 半導体集積回路装置 |
| JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
| US4737469A (en) * | 1984-01-19 | 1988-04-12 | Honeywell Inc. | Controlled mode field effect transistors and method therefore |
| US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
| US4949150A (en) * | 1986-04-17 | 1990-08-14 | Exar Corporation | Programmable bonding pad with sandwiched silicon oxide and silicon nitride layers |
| US5066603A (en) * | 1989-09-06 | 1991-11-19 | Gte Laboratories Incorporated | Method of manufacturing static induction transistors |
| JP3360970B2 (ja) * | 1995-05-22 | 2003-01-07 | 株式会社東芝 | 半導体装置の製造方法 |
| US5883566A (en) * | 1997-02-24 | 1999-03-16 | International Business Machines Corporation | Noise-isolated buried resistor |
| US6100153A (en) * | 1998-01-20 | 2000-08-08 | International Business Machines Corporation | Reliable diffusion resistor and diffusion capacitor |
| JPH11297847A (ja) * | 1998-04-13 | 1999-10-29 | Nec Kyushu Ltd | 半導体装置及びその製造方法 |
| DE19917370C1 (de) | 1999-04-16 | 2000-10-05 | St Microelectronics Gmbh | In einer integrierten halbleiterschaltung gebildeter weitgehend spannungsunabhängiger elektrischer Widerstand |
| JP3528750B2 (ja) * | 2000-03-16 | 2004-05-24 | 株式会社デンソー | 半導体装置 |
| JP4599660B2 (ja) * | 2000-05-24 | 2010-12-15 | ソニー株式会社 | 半導体抵抗素子を有する半導体装置とその製造方法 |
| US7384854B2 (en) * | 2002-03-08 | 2008-06-10 | International Business Machines Corporation | Method of forming low capacitance ESD robust diodes |
| FR2884050B1 (fr) * | 2005-04-01 | 2007-07-20 | St Microelectronics Sa | Circuit integre comprenant un substrat et une resistance |
| US7910450B2 (en) * | 2006-02-22 | 2011-03-22 | International Business Machines Corporation | Method of fabricating a precision buried resistor |
| US10170464B2 (en) | 2015-06-05 | 2019-01-01 | International Business Machines Corporation | Compound semiconductor devices having buried resistors formed in buffer layer |
| US10410966B2 (en) | 2017-12-19 | 2019-09-10 | International Business Machines Corporation | BEOL embedded high density vertical resistor structure |
| CN108922925B (zh) * | 2018-07-09 | 2021-06-25 | 深圳市物芯智能科技有限公司 | 一种功率器件保护芯片及其制作方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1086128A (en) * | 1964-10-23 | 1967-10-04 | Motorola Inc | Fabrication of four-layer switch with controlled breakdown voltage |
| US3430110A (en) * | 1965-12-02 | 1969-02-25 | Rca Corp | Monolithic integrated circuits with a plurality of isolation zones |
| US3443176A (en) * | 1966-03-31 | 1969-05-06 | Ibm | Low resistivity semiconductor underpass connector and fabrication method therefor |
| US3786318A (en) * | 1966-10-14 | 1974-01-15 | Hitachi Ltd | Semiconductor device having channel preventing structure |
| US3629667A (en) * | 1969-03-14 | 1971-12-21 | Ibm | Semiconductor resistor with uniforms current distribution at its contact surface |
| US3601669A (en) * | 1969-05-07 | 1971-08-24 | Texas Instruments Inc | Integrated heater element array and drive matrix therefor |
| JPS4840307B1 (de) * | 1970-06-12 | 1973-11-29 | ||
| US3631309A (en) * | 1970-07-23 | 1971-12-28 | Semiconductor Elect Memories | Integrated circuit bipolar memory cell |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| JPS4869477A (de) * | 1971-12-21 | 1973-09-20 | ||
| US3787710A (en) * | 1972-01-25 | 1974-01-22 | J Cunningham | Integrated circuit structure having electrically isolated circuit components |
| JPS5120267B2 (de) * | 1972-05-13 | 1976-06-23 | ||
| CA997481A (en) * | 1972-12-29 | 1976-09-21 | International Business Machines Corporation | Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing |
| JPS5321838B2 (de) * | 1973-02-28 | 1978-07-05 | ||
| JPS49131788A (de) * | 1973-04-23 | 1974-12-17 | ||
| JPS49131789A (de) * | 1973-04-23 | 1974-12-17 | ||
| US3966577A (en) * | 1973-08-27 | 1976-06-29 | Trw Inc. | Dielectrically isolated semiconductor devices |
| US3953875A (en) * | 1974-01-02 | 1976-04-27 | Motorola, Inc. | Capacitor structure and circuit facilitating increased frequency stability of integrated circuits |
| US3990092A (en) * | 1974-01-11 | 1976-11-02 | Hitachi, Ltd. | Resistance element for semiconductor integrated circuit |
| US3990102A (en) * | 1974-06-28 | 1976-11-02 | Hitachi, Ltd. | Semiconductor integrated circuits and method of manufacturing the same |
| JPS514978A (ja) * | 1974-07-02 | 1976-01-16 | Mitsubishi Electric Corp | Handotaishusekikairono seisakuho |
| JPS5167080A (en) * | 1974-12-07 | 1976-06-10 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS5275989A (en) * | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Production of semiconductor device |
| DE2605641C3 (de) * | 1976-02-12 | 1979-12-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hochfrequenztransistor und Verfahren zu seiner Herstellung |
-
1977
- 1977-10-25 US US05/844,768 patent/US4228450A/en not_active Expired - Lifetime
-
1978
- 1978-07-18 CA CA307,633A patent/CA1102011A/en not_active Expired
- 1978-09-14 JP JP11247078A patent/JPS5466087A/ja active Granted
- 1978-09-29 DE DE7878101028T patent/DE2861533D1/de not_active Expired
- 1978-09-29 IT IT28238/78A patent/IT1159142B/it active
- 1978-09-29 EP EP78101028A patent/EP0001574B1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4228450A (en) | 1980-10-14 |
| CA1102011A (en) | 1981-05-26 |
| JPH0140498B2 (de) | 1989-08-29 |
| IT7828238A0 (it) | 1978-09-29 |
| IT1159142B (it) | 1987-02-25 |
| EP0001574A1 (de) | 1979-05-02 |
| EP0001574B1 (de) | 1982-01-13 |
| JPS5466087A (en) | 1979-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8339 | Ceased/non-payment of the annual fee |