DE2618733C2 - - Google Patents

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Publication number
DE2618733C2
DE2618733C2 DE2618733A DE2618733A DE2618733C2 DE 2618733 C2 DE2618733 C2 DE 2618733C2 DE 2618733 A DE2618733 A DE 2618733A DE 2618733 A DE2618733 A DE 2618733A DE 2618733 C2 DE2618733 C2 DE 2618733C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2618733A
Other versions
DE2618733A1 (de
Inventor
Takeshi Sagamihara Kanagawa Jp Matsushita
Hisao Atsugi Kanagawa Jp Hayashi
Mitsuru Hatano Kanagawa Jp Shibazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2618733A1 publication Critical patent/DE2618733A1/de
Application granted granted Critical
Publication of DE2618733C2 publication Critical patent/DE2618733C2/de
Granted legal-status Critical Current

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
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    • Y10S438/918—Special or nonstandard dopant
DE19762618733 1975-04-30 1976-04-28 Halbleiterbauelement mit heterouebergang Granted DE2618733A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50052731A JPS51128268A (en) 1975-04-30 1975-04-30 Semiconductor unit

Publications (2)

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DE2618733A1 DE2618733A1 (de) 1976-11-11
DE2618733C2 true DE2618733C2 (de) 1987-03-26

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DE19762618733 Granted DE2618733A1 (de) 1975-04-30 1976-04-28 Halbleiterbauelement mit heterouebergang

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US (1) US4062034A (de)
JP (1) JPS51128268A (de)
CA (1) CA1075373A (de)
DE (1) DE2618733A1 (de)
FR (1) FR2309981A1 (de)
GB (1) GB1542651A (de)
NL (1) NL187461C (de)

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Also Published As

Publication number Publication date
FR2309981B3 (de) 1980-07-18
NL7604558A (nl) 1976-11-02
JPS5637702B2 (de) 1981-09-02
CA1075373A (en) 1980-04-08
DE2618733A1 (de) 1976-11-11
US4062034A (en) 1977-12-06
JPS51128268A (en) 1976-11-09
NL187461C (nl) 1991-10-01
FR2309981A1 (fr) 1976-11-26
NL187461B (nl) 1991-05-01
GB1542651A (en) 1979-03-21

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