DE19947914A1 - Method of soft soldering components and soft soldered assembly - Google Patents

Method of soft soldering components and soft soldered assembly

Info

Publication number
DE19947914A1
DE19947914A1 DE19947914A DE19947914A DE19947914A1 DE 19947914 A1 DE19947914 A1 DE 19947914A1 DE 19947914 A DE19947914 A DE 19947914A DE 19947914 A DE19947914 A DE 19947914A DE 19947914 A1 DE19947914 A1 DE 19947914A1
Authority
DE
Germany
Prior art keywords
fiber
solder
microns
fiber sections
soft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19947914A
Other languages
German (de)
Inventor
Hans-Joachim Krokoszinski
Hans-Joachim Schmutzler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Research Ltd Switzerland
Original Assignee
ABB Research Ltd Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Research Ltd Switzerland filed Critical ABB Research Ltd Switzerland
Priority to DE19947914A priority Critical patent/DE19947914A1/en
Priority to AU75217/00A priority patent/AU7521700A/en
Priority to PCT/EP2000/009235 priority patent/WO2001024967A1/en
Publication of DE19947914A1 publication Critical patent/DE19947914A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0215—Metallic fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0275—Fibers and reinforcement materials
    • H05K2201/0281—Conductive fibers

Abstract

The invention relates to a method for bonding metal parts by soft soldering. A fiber-reinforced solder (2) is used in this invention and produced by mixing a paste-like solder (5) with fiber segments (4). Said fiber segments (4) can be provided with a surface coating (6).

Description

Die Erfindung bezieht sich auf ein Verfahren zum Verbinden von Komponenten mit­ tels Weichlöten, insbesondere zur Verbindung von verlustbehafteten Bauelementen der Leistungselektronik mit Substraten. Außerdem bezieht sich die Erfindung auf weichgelötete Anordnungen, insbesondere der Leistungselektronik.The invention relates to a method for connecting components with means soft soldering, especially for connecting lossy components power electronics with substrates. The invention also relates to soft soldered arrangements, especially power electronics.

Leistungselektronische Anordnungen bedürfen in der Regel einer Kühlung, da die Abfuhr von Verlustwärme, bzw. die sich einstellende Betriebstemperatur maßgeblich ist für die Belastbarkeit insbesondere elektronischer Bauelemente.Power electronic arrangements generally require cooling, since the Dissipation of heat loss or the operating temperature that is decisive is for the resilience especially of electronic components.

Gängigste Art der Kühlung von verlustbehafteten Bauelementen oder Baugruppen der Leistungselektronik ist die Luftkühlung. Die Leistungsbauelemente sind meist gruppiert in kompakten Modulen, die aus einem Kunststoffgehäuse mit einem kera­ mischen kupferkaschierten Substrat bestehen, auf das IGBTs, MOSFETs, Freilauf­ dioden oder auch nur Gleichrichterdioden aufgelötet sind. Diese Module werden auf einen massiven gefinnten Aluminium-Kühlkörper gepreßt, der die Verlustwärme aus dem Modulboden aufnimmt und über seine große Oberfläche durch natürliche oder forcierte Konvektion an die Umgebungsluft abgibt. Masse und Volumen des Kühlkör­ pers bestimmen seinen Wärmewiderstand Rth(Kühlk.) und damit die Temperaturdiffe­ renz αTca, die sich bei maximaler Verlustleistung Wloss zwischen der Kühlkörperober­ fläche Tc und der Umgebungstemperatur Ta einstellt:
The most common type of cooling for lossy components or assemblies in power electronics is air cooling. The power components are usually grouped in compact modules, which consist of a plastic housing with a ceramic-clad copper-clad substrate, on which IGBTs, MOSFETs, freewheeling diodes or just rectifier diodes are soldered. These modules are pressed onto a solid finned aluminum heat sink, which absorbs the heat loss from the module base and releases it to the ambient air through natural or forced convection via its large surface. The mass and volume of the heat sink determine its thermal resistance R th (cooler) and thus the temperature difference αT ca , which occurs at maximum power loss W loss between the heat sink surface T c and the ambient temperature T a :

Tc - Ta = ΔTca = Rth(Kühlk.).Wloss (1)
T c - T a = ΔT ca = R th (refrigerator). W loss (1)

Auf die Kühleroberflächentemperatur muß noch die vom Modulwärmewiderstand Rth(Modul) bestimmte Temperaturdifferenz ΔTjc = Tj - Tc = Rth(Modul).Wloss aufad­ diert werden, um die Sperrschichttemperatur Tj zu erhalten. Diese wird von den Bau­ elemente-Herstellern meist mit maximal 125°C angegeben.
Nor the specific from the module thermal resistance R th (module) temperature difference .DELTA.T jc = T j must on the cooler surface temperature - are T c = R th (module) .W loss AUFAD diert to obtain the junction temperature T j. The component manufacturers usually state this at a maximum of 125 ° C.

Tjmax = 125°C = Tj - Tc + (Tc - Ta) + Ta
= (Rth(Modul) + Rth(Kühlk.)).Wloss (2)T jmax = 125 ° C = T j - T c + (T c - T a ) + T a
= (Rth (module) + R th (refrigerator)). W loss (2)

Daraus ist ableitbar, daß bei vorgegebenen Verlusten und gleichbleibendem Modul­ aufbau (d. h. Modulwärmewiderstand) zur Begrenzung der Sperrschichttemperatur der Kühlkörperwärmewiderstand hinreichend klein dimensioniert sein muß gemäß:
From this it can be deduced that with given losses and constant module structure (ie module heat resistance) the heat sink heat resistance must be dimensioned small enough to limit the junction temperature according to:

Rth(Kühlk.) = 1/(αA)
= 125°C/Wloss - Rth(Modul) (3)
R th (refrigerator) = 1 / (αA)
= 125 ° C / W loss - R th (module) (3)

mit
α = therm. Übergangskoeffizient
A = KühlkörperoberflächeWith
α = thermal transition coefficient
A = heat sink surface

Bei Vorgabe des thermischen Übergangskoeffizienten
If the thermal transition coefficient is specified

  • - natürliche Konvektion + Strahlung α = 8-10 W/m2K- natural convection + radiation α = 8-10 W / m 2 K.
  • - forcierte Luftbewegung + Strahlung α = 10-35 W/m2K- forced air movement + radiation α = 10-35 W / m 2 K.

bleibt als Stellgröße nur noch die Oberfläche und damit das Volumen und die Masse des Kühlkörpers. Wenn Kosten, Gewicht und Volumen einer solchen verlustbehafte­ ten Baugruppe gleichzeitig verringert werden sollen, muß der Kühlkörper drastisch verkleinert werden. Das bedeutet eine deutliche Erhöhung seines Wärmewiderstan­ des und damit eine Anhebung der Sperrschichttemperaturen gemäß Gleichung (2) in den Halbleiterbauelementen über 125°C hinaus. Das führt aber laut Aussage der Hersteller von Halbleiterbauelementen zu einer drastischen Verringerung der Zuver­ lässigkeit und Lebensdauer der Bauelemente und damit der Module. the only manipulated variable left is the surface and thus the volume and mass of the heat sink. If the cost, weight and volume of such lossy th assembly to be reduced simultaneously, the heat sink must be drastic be made smaller. This means a significant increase in its thermal resistance and thus an increase in the junction temperatures according to equation (2) in the semiconductor components above 125 ° C. According to the Manufacturers of semiconductor devices to drastically reduce supplies Liability and lifespan of the components and thus the modules.  

Anwender von serienmäßigen Halbleitermodulen halten sich deshalb an die oben dargestellte Kühlkörperdimensionierung.Users of standard semiconductor modules therefore adhere to the above shown heat sink dimensioning.

Dabei ist zunächst nicht ganz klar, ob die Festkörpereigenschaften der Silizium- Baueiemente allein oder/und eher deren Verlötung mit dem Modulsubstrat die Draht­ bonds sowie die verwendeten Gehäusematerialien die obere Grenztemperatur be­ stimmen. Laut Literatur stehen bis zu Temperaturen von 175°C vornehmlich diese "Packaging"-Probleme im Vordergrund, während darüber erst der Verlust der Sperr­ fähigkeit der Silizium-Bauelemente aufgrund des Anstiegs der intrinsischen La­ dungsträgerdichte hinzukommt. Bis 150°C oder gar 175°C könnte man Si- Bauelemente noch betreiben, wenn es gelänge, neben den Drahtbonds auch die Lötstellen zuverlässig gegen Temperatur- und Lastwechsel zwischen 0°C und diesen Maximaltemperaturen herzustellen. Das ist mit den angewandten Löttechniken bisher nicht gelungen, weil die ständige thermische Wechselbelastung das Lotgefüge ver­ härtet und zu Rissbildung und letztlich zum Abriß der Lötstelle führt.It is initially not entirely clear whether the solid-state properties of the silicon Components alone or / and rather their soldering to the module substrate the wire bonds and the housing materials used the upper limit temperature be voices. According to the literature, these are predominantly up to temperatures of 175 ° C "Packaging" problems in the foreground, while only about the loss of the lock ability of silicon devices due to the increase in intrinsic La manure density is added. Up to 150 ° C or even 175 ° C you could If possible, components can still be operated in addition to wire bonds Reliable solder joints against temperature and load changes between 0 ° C and this To produce maximum temperatures. That is with the applied soldering techniques so far failed because the constant thermal alternating load ver the solder structure hardens and leads to crack formation and ultimately to the solder joint being torn off.

Stand der Löttechnik am Beispiel der IGBT-Module ist:
The state of soldering technology using the example of the IGBT modules is:

  • - Anwendung von Lötfolienstücken (sog. Preforms) z. B. der Zusammensetzung Pb95Sn5 (flussmittelfrei, Liquidustemperatur 313°C),- Use of solder foil pieces (so-called preforms) z. B. the composition Pb95Sn5 (flux-free, liquidus temperature 313 ° C),
  • - Verwendung von Lötformen (meist aus Graphit) zur Positionierung der Bauele­ mente und der Löt-Preforms zueinander,- Use of soldering molds (mostly made of graphite) to position the components elements and the solder preforms to each other,
  • - Reflow-Lötung in einem Wasserstoff-gefluteten Durchlaufofen bei ca. 330°C.- Reflow soldering in a hydrogen-flooded continuous furnace at approx. 330 ° C.

Lote mit Schmelztemperatur <300°C können im Prinzip bis = 200°C betrieben wer­ den.In principle, solders with a melting temperature of <300 ° C can be operated up to = 200 ° C the.

Selbst wenn es gelingt, Halbleiterbauelemente mit hinreichend zuverlässiger Funkti­ on bei Dauerbetriebstemperaturen oberhalb von 125°C zu finden, kann der Einspar­ effekt nicht ausgenutzt werden, wenn die Lötstellen nach kurzer Zeit der Wechselbe­ anspruchung durch Rissbildung und -ausbreitung defekt werden.Even if it succeeds, semiconductor components with sufficiently reliable functionality can be found at continuous operating temperatures above 125 ° C Effect can not be exploited if the solder joints change after a short time stress due to crack formation and propagation.

In der EP 0 476 734 A1 wird vorgeschlagen, eine Dispersion von 5 Vol% Partikeln aus den intermetallischen Verbindungen Ni3Sn4 oder Cu9NiSn3 zu verwenden, um Blei-Zinn-Lot zu härten. Allerdings hat sich gezeigt, daß damit keine ausreichende Benetzung der dispergierten Teile mit dem jeweiligen Lot erreicht wird. Außerdem kann eine Verschlechterung des elastischen Dehnungsbereichs des Lots ohne Riss­ bildung sowie ein ungünstiges Fließ- und Benetzungsverhalten eintreten.EP 0 476 734 A1 proposes a dispersion of 5% by volume of particles from the intermetallic compounds Ni3Sn4 or Cu9NiSn3 to use Harden lead-tin solder. However, it has been shown that this is not sufficient  Wetting of the dispersed parts with the respective solder is achieved. Moreover can deteriorate the elastic expansion range of the solder without cracking formation and unfavorable flow and wetting behavior.

Die zu lösende Aufgabe besteht darin, ein Lötverfahren anzugeben, das einerseits die übliche Lötqualität bezüglich Benetzung, Porenfreiheit, mechanische Festigkeit und elektrische Leitfähigkeit bietet, und andererseits eine dauerhafte Anwendung danach hergestellter Anordnungen bis zu Sperrschichttemperaturen von 150°C bis 175°C erlaubt, ohne daß Rissbildung und -ausbreitung auftreten. Außerdem soll eine Anordnung angegeben werden, die im vorgenannten Temperaturbereich arbeiten kann.The task to be solved is to specify a soldering process, on the one hand the usual soldering quality in terms of wetting, freedom from pores, mechanical strength and provides electrical conductivity, and on the other hand a permanent application subsequently manufactured arrangements up to junction temperatures of 150 ° C to 175 ° C allowed without cracking and spreading. In addition, a Arrangement can be specified that work in the aforementioned temperature range can.

Diese Aufgabe wird durch ein Lötverfahren mit den im Anspruch 1 angegebenen Merkmalen gelöst. Vorteilhafte Ausgestaltungen und eine Anordnung sind in weiteren Ansprüchen angegeben.This object is achieved by a soldering process with that specified in claim 1 Features resolved. Advantageous refinements and an arrangement are in others Claims specified.

Mit dem erfindungsgemäßen Verfahren wird vorgeschlagen, Pulver oder kurze Fa­ serstücke durch Verrühren in einem als Paste vorliegenden Lot zu verteilen und durch anschließendes Aufschmelzen im Gefüge einzulagern. Vorzugsweise werden Pulver oder Faserstücke verwendet, die eine besonders gut lötfähige Oberfläche be­ sitzen.With the method according to the invention it is proposed to use powder or short Fa distribute the pieces by stirring in a paste paste by subsequent melting in the structure. Preferably be Powder or fiber pieces are used that have a particularly good solderable surface sit.

Das Verfahren und damit hergestellte Produkte weisen eine Reihe von Vorteilen auf:
The process and the products it produces have a number of advantages:

  • - Es können weiterhin kommerzielle Lote verwendet werden, sofern sie in Pasten­ form erhältlich sind (keine Sonderanfertigung);- Commercial solders can still be used, provided they are in pastes are available in the form (no special order);
  • - Die Lote können nach der Einmischung des Feststoffes nach wie vor mit einem Siebdruckverfahren auf die Lötflächen der Substrate oder Leiterplatten aufgetra­ gen werden;- After mixing in the solid, the solders can still be used with a Screen printing process on the soldering surfaces of the substrates or printed circuit boards be gen;
  • - Die Lote können trotz ihres Fremdstoffgehalts mit den gleichen Reflowverfahren mit (möglicherweise unwesentlich zu modifizierenden) Temperaturprofilen aufge­ schmolzen werden. - Despite their foreign matter content, the solders can use the same reflow methods with (possibly insignificantly to be modified) temperature profiles be melted.  
  • - Durch geeignete Wahl des Materials, z. B. Nickel, oder Beschichtung mit geeig­ netem Material wird eine gute Benetzung der einzelnen Partikel oder Fasern und damit eine stoffschlüssige Einlagerung in das Lotgefüge sichergestellt;- By suitable choice of material, e.g. B. nickel, or coating with geeig netem material is a good wetting of the individual particles or fibers and thus ensuring a cohesive storage in the solder structure;
  • - Bei Verwendung von Nickel als Fremdstoff wird der gesamte Zinngehalt des Lo­ tes nach langer Zeit an der Partikeloberfläche in Ni3Sn4 umgesetzt. Damit wird die Versprödung der Lot/Substrat-Grenzfläche verhindert.- When using nickel as a foreign substance, the entire tin content of the solder is converted into Ni 3 Sn 4 on the particle surface after a long time. This prevents embrittlement of the solder / substrate interface.
  • - Durch Variation der Parameter "Fremdstoffmaterial" oder "Fremdstoffanteil in Vol% oder Gew.-%", "Faserlänge", "Korn- oder Faserdurchmesser", "Beschich­ tungsmaterial", "Beschichtungsdicke" sind so viele Optimierungsmöglichkeiten gegeben, daß für alle Lotpasten und Anwendungsfälle die geeignete Werkstoff­ kombination ermittelt werden kann;- By varying the parameters "Foreign matter material" or "Foreign matter content in % Or% by weight "," fiber length "," grain or fiber diameter "," Beschich tion material "," coating thickness "are so many optimization options given that the suitable material for all solder pastes and applications combination can be determined;
  • - Durch Verwendung von Fasern wird außer der Behinderung von Kornwachstum und Rissausbreitung noch eine erhebliche Vergrößerung der Elastizität und Bruchdehnung erreicht;- Using fibers will prevent grain growth and crack propagation still a significant increase in elasticity and Elongation at break reached;
  • - Wenn beispielsweise durch Verbesserung der mechanischen Eigenschaften der Lötstellen bei gleichbleibender Zuverlässigkeit der Bauelementfunktion die Sperr­ schichttemperatur der aufgelöteten Halbleiterbauelemente von 125°C auf z. B. 155°C erhöht werden kann, dann könnte die Oberflächentemperatur des Kühlkör­ pers um den gleichen Betrag (hier 30 K) von (typisch) 85°C auf 115°C erhöht wer­ den. Damit würde die Temperaturdifferenz zwischen Kühikörperoberfläche und maximaler Umgebungstemperatur von 55°C von 30 K auf 60 K verdoppelt und so­ mit eine Reduktion der Oberfläche, des Volumens, des Gewichts und der Kosten des Kühlkörpers um etwa einen Faktor 0,5 erreicht werden.- If, for example, by improving the mechanical properties of the Solder the locks while maintaining the reliability of the component function layer temperature of the soldered semiconductor components from 125 ° C to z. B. 155 ° C can be increased, then the surface temperature of the heat sink pers increased by the same amount (here 30 K) from (typically) 85 ° C to 115 ° C the. The temperature difference between the heat sink surface and maximum ambient temperature of 55 ° C doubled from 30 K to 60 K and so with a reduction in surface area, volume, weight and cost of the heat sink can be achieved by a factor of 0.5.

Zur weiteren Erläuterung der Erfindung werden nachstehend Ausführungs- und An­ wendungsbeispiele anhand von Zeichnungsfiguren für Faserverstärkung beschrie­ ben.In order to further explain the invention, execution and an Described application examples using drawing figures for fiber reinforcement ben.

Es zeigen:Show it:

Fig. 1 eine Lötstelle mit einem faserverstärkten Lot, Fig. 1 is a solder joint with a fiber reinforced solder,

Fig. 2 eine typische Anordnung eines metallisierten Subtrats mit aufgelöteten Bauelemente, und Fig. 2 shows a typical arrangement of a metallized substrate with soldered components, and

Fig. 3 eine Darstellung der praktischen Auswirkung der Verwendung eines fa­ serverstärkten Lots. Fig. 3 shows the practical impact of using a fa server-strengthened solder.

Fig. 1 zeigt auf der linken Bildseite eine Lötstelle, wobei eine Metallisierung 1 eines nicht dargestellten Substrats gezeigt ist, auf das ein Bauelement 3 mittels eines fa­ serverstärkten Lots 2 verlötet ist. Auf der rechten Bildseite der Fig. 1 ist das Lot 2 schematisiert und vergrößert dargestellt. Es ist ersichtlich, daß in ein pastenförmiges Lot 5 Faserstücke 4 eingebettet sind. Die Faserstücke 4 sind mit einer gut benetzen­ den Oberflächenbeschichtung 6 versehen, oder sie bestehen vollständig aus gut be­ netzendem Material, wie z. B. Nickel oder Kupfer. Fig. 1 shows a solder joint on the left-hand side, a metallization of a substrate 1, not shown, is shown to which a component is soldered by means of a 3 fa server strengthened solder. 2 The solder 2 is shown schematically and enlarged on the right-hand side of FIG. 1. It can be seen that 5 pieces of fiber 4 are embedded in a pasty solder. The fiber pieces 4 are provided with a good wetting of the surface coating 6 , or they consist entirely of well-wetting material, such as. B. nickel or copper.

Fig. 2 zeigt in einer schematisierten Darstellung eine Anordnung mit einem Substrat 7, z. B. einem Keramiksubstrat aus Al2O3 oder AlN, das auf seiner Ober- und Unter­ seite Metallisierungen 1 aufweist. Es versteht sich, daß auch andere Substrate, wie z. B. DCB-Substrate geeignet sind. Auf Metallisierungen 1 sind Halbleiterchips 9, wie z. B. Silizium-IGBTs, Silizium-MOSFETs, Silizium-Dioden, Siliziumkarbid-Dioden oder SiC-Transistoren aufgelötet. Die Halbleiterchips 9 sind mittels einem faserverstärkten Lot 2 auf Metallisierungen 1 aufgelötet. Elektroden der Chips 9 sind mittels Draht­ bonds 8, z. B. aus Aluminium mit weiteren Metallisierungen 1 verbunden. Fig. 2 shows a schematic representation of an arrangement with a substrate 7 , z. B. a ceramic substrate made of Al 2 O 3 or AlN, which has metallizations 1 on its upper and lower side. It is understood that other substrates, such as. B. DCB substrates are suitable. On metallizations 1 semiconductor chips 9 , such as. B. silicon IGBTs, silicon MOSFETs, silicon diodes, silicon carbide diodes or SiC transistors soldered. The semiconductor chips 9 are soldered onto metallizations 1 by means of a fiber-reinforced solder 2 . Electrodes of the chips 9 are bonded by means of wire bonds 8 , e.g. B. made of aluminum with further metallizations 1 .

Fig. 3 zeigt anhand einer Gegenüberstellung einer auf der linken Seite dargestellten konventionellen Anordnung und einer auf der rechten Seite dargestellten erfindungs­ gemäßen Anordnung, welche Effekte erzielbar sind. Es ist dabei jeweils ein mit Fin­ nen versehener Aluminium-Kühlkörper 10 dargestellt, auf den eine beispielsweise in Fig. 2 gezeigte Anordnung gut wärmeleitend aufgebracht ist. Es wird dabei eine im Halbleiterchip 9 erzeugt Verlustwärme Wloss zum Kühlkörper 10 hin abgeführt. Fig. 3 shows a comparison of a conventional arrangement shown on the left side and an arrangement according to the Invention shown on the right side, which effects can be achieved. In each case, an aluminum heat sink 10 provided with fins is shown, to which an arrangement shown, for example, in FIG. 2 is applied with good thermal conductivity. A heat loss W loss generated in the semiconductor chip 9 is dissipated to the heat sink 10 .

Im dargestellten Beispiel wird bei der konventionellen Anordnung eine Sperrschicht­ temperatur Tj1 = 125°C zugelassen, bei der erfindungsgemäßen Anordnung eine Sperrschichttemperatur Tj2 = 155°C; und zwar dauerhaft und auch bei wechselnder Temperatur, z. B. bedingt durch wechselnde Umgebungstemperatur oder Lastwech­ sel.In the example shown, a junction temperature T j1 = 125 ° C is permitted in the conventional arrangement, and a junction temperature T j2 = 155 ° C in the arrangement according to the invention; and that permanently and even at changing temperatures, e.g. B. due to changing ambient temperature or load change sel.

Da die Sperrschichttemperatur bei der erfindungsgemäßen Anordnung höher sein darf, genügt eine kleinere Kühlkörperoberfläche. Since the junction temperature can be higher in the arrangement according to the invention a smaller heat sink surface is sufficient.  

Anstelle von Bauelementen und Substraten können unter Verwendung des pulver- oder faserverstärkten Lots auch andere Teile, z. B. metallische Gehäuseteile verlötet werden.Instead of components and substrates, the powder or fiber-reinforced solder other parts, e.g. B. soldered metallic housing parts become.

Claims (10)

1. Verfahren zum Auflöten von ungekapselten Halbleiterchips (9) oder ge­ kapselten Halbleiterbauelementen oder anderen elektronischen Bauelementen mit­ tels Weichlot auf metallisierte Oberflächen (1) von Keramiksubstraten (7) oder von Leiterplatten oder zum Verlöten von metallischen Gehäuseteilen, wobei
  • a) ein Lotmaterial (5) in pastöser Form bereitgestellt und mit Pulver oder Faser­ abschnitten als Fremdstoff (4) zu einem weichen Lotpastenmaterial (2) ver­ mischt wird, wobei der Volumenprozentsatz des Faserabschnittes (4) etwa 1 bis 10 Volumenprozent beträgt,
  • b) das so mit Pulver oder Fasern vermischte Lotpastenmaterial (2) mittels eines geeigneten Verfahrens, wie Siebdruckverfahren oder mittels Dispenser auf die zu verlötenden Flächen wenigstens eines der Fügepartner (1, 3) aufge­ tragen wird,
  • c) auf die mit noch weichem Lotpastenmaterial (2) beschichteten Flächen (1) zu verbindende Teile (3) aufgesetzt werden, und
  • d) die positionierten Teile (3) in einem Reflowofen in einer geeigneten Gasat­ mosphäre einem geeigneten Temperaturzyklus unterzogen werden, der zum Aufschmelzen und Fließen des Lotpastenmaterials (2) unter gleichzeitiger Einlagerung der Pulverkörner oder Faserabschnitte (4) führt.
1. A method for soldering unencapsulated semiconductor chips ( 9 ) or encapsulated semiconductor components or other electronic components with soft solder on metalized surfaces ( 1 ) of ceramic substrates ( 7 ) or of printed circuit boards or for soldering metallic housing parts, wherein
  • a) a solder material ( 5 ) is provided in pasty form and sections with powder or fiber as foreign matter ( 4 ) are mixed to form a soft solder paste material ( 2 ), the volume percentage of the fiber section ( 4 ) being about 1 to 10 percent by volume,
  • b) the solder paste material ( 2 ) thus mixed with powder or fibers is applied to the surfaces to be soldered by at least one of the joining partners ( 1 , 3 ) by means of a suitable method, such as a screen printing method or by means of a dispenser,
  • c) parts ( 3 ) to be connected to the surfaces ( 1 ) coated with still soft paste material ( 2 ), and
  • d) the positioned parts ( 3 ) in a reflow oven in a suitable gas atmosphere are subjected to a suitable temperature cycle which leads to the melting and flow of the solder paste material ( 2 ) with simultaneous incorporation of the powder grains or fiber sections ( 4 ).
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das Pulver bzw. die Faserabschnitte (4) aus Kupfer oder Nickel bestehen oder aber aus Koh­ lenstoff, Aramid, Bor, Glasfiber oder Quarz bestehen.2. The method according to claim 1, characterized in that the powder or the fiber sections ( 4 ) consist of copper or nickel or consist of Koh lenstoff, aramid, boron, glass fiber or quartz. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß nichtmetallische Pulverkörner oder Faserabschnitte (4) verwendet werden, die mit einer gut benetzenden Oberflächenbeschichtung (6) versehen sind.3. The method according to claim 1 or 2, characterized in that non-metallic powder grains or fiber sections ( 4 ) are used, which are provided with a well-wetting surface coating ( 6 ). 4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, daß die Oberflä­ chenbeschichtung (6) der nichtmetallischen Pulverkörner oder Faserabschnitte (4) bei einer Einlagerung in Sn-reiche Lote mittels Kupfer und/oder Zinn erfolgt, bei einer Einlagerung in Pb-reiche Lote mittels Nickel und bei einer Einlagerung in Au-reiche Lote mittels Nickel oder Gold erfolgt.4. The method according to claim 3, characterized in that the surface coating ( 6 ) of the non-metallic powder grains or fiber sections ( 4 ) is carried out by means of copper and / or tin when stored in Sn-rich solders, by means of storage in Pb-rich solders Nickel and when stored in Au-rich solders using nickel or gold. 5. Verfahren nach einem der vorstehenden Ansprüche, dadurch gekenn­ zeichnet, daß der Korndurchmesser zwischen 5 µm und 50 µm liegt, bzw. daß der Faserdurchmesser im Bereich 5 µm bis 50 µm liegt und die Länge der Faserab­ schnitte (4) im Bereich von etwa 0,1 mm bis 1 mm liegt.5. The method according to any one of the preceding claims, characterized in that the grain diameter is between 5 microns and 50 microns, or that the fiber diameter is in the range 5 microns to 50 microns and the length of the fiber sections ( 4 ) in the range of about 0.1 mm to 1 mm. 6. Anordnung eines mit metallisierten Oberflächen (1) versehenen Sub­ strats (7), auf das mittels Weichlöten Bauelemente (3, 9) aufgebracht sind, wobei das verwendete Lotmaterial (2) eingelagerte Pulverkörner oder Faserabschnitte (4) ent­ hält.6. Arrangement of a with metallized surfaces ( 1 ) Sub strats ( 7 ) onto which components ( 3 , 9 ) are applied by means of soft soldering, the solder material ( 2 ) used containing embedded powder grains or fiber sections ( 4 ). 7. Anordnung nach Anspruch 6, dadurch gekennzeichnet, daß der Volu­ menanteil der Fremdstoffe (4) 1 bis 10 Volumenprozent beträgt.7. Arrangement according to claim 6, characterized in that the volume of the foreign matter menu ( 4 ) is 1 to 10 percent by volume. 8. Anordnung nach Anspruch 6 oder 7, dadurch gekennzeichnet, daß die Pulverkörner bzw. Faserabschnitte (4) aus Nickel oder Kupfer oder nichtmetallischen Stoffen bestehen.8. Arrangement according to claim 6 or 7, characterized in that the powder grains or fiber sections ( 4 ) consist of nickel or copper or non-metallic substances. 9. Anordnung nach einem der Ansprüche 6 bis 8, dadurch gekennzeich­ net, daß der Durchmesser der Pulverkörner zwischen 5 µm und 50 µm liegt, bzw. die Länge der Faserabschnitte (4) etwa 0,1 mm bis 1 mm beträgt.9. Arrangement according to one of claims 6 to 8, characterized in that the diameter of the powder grains is between 5 microns and 50 microns, or the length of the fiber sections ( 4 ) is about 0.1 mm to 1 mm. 10. Anordnung nach einem der Ansprüche 6 bis 9, dadurch gekennzeich­ net, daß verwendete nichtmetallische Pulverkörner oder Faserabschnitte (4) mit einer gut benetzenden Oberflächenbeschichtung (6) versehen sind.10. Arrangement according to one of claims 6 to 9, characterized in that non-metallic powder grains or fiber sections ( 4 ) used are provided with a well-wetting surface coating ( 6 ).
DE19947914A 1999-10-06 1999-10-06 Method of soft soldering components and soft soldered assembly Withdrawn DE19947914A1 (en)

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DE19947914A DE19947914A1 (en) 1999-10-06 1999-10-06 Method of soft soldering components and soft soldered assembly
AU75217/00A AU7521700A (en) 1999-10-06 2000-09-21 Method for soft soldering of components and a soft soldered device
PCT/EP2000/009235 WO2001024967A1 (en) 1999-10-06 2000-09-21 Method for soft soldering of components and a soft soldered device

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DE102006039339A1 (en) * 2006-08-24 2008-03-06 Bayerische Motoren Werke Ag Hard solder joining components in solid oxide fuel cells used e.g. in electric vehicles, contains ceramic particles, fibers or intermediate layer with reduced coefficient of thermal expansion

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