DE19882055T1 - MRAM mit ausgerichteten magnetischen Vektoren - Google Patents
MRAM mit ausgerichteten magnetischen VektorenInfo
- Publication number
- DE19882055T1 DE19882055T1 DE19882055T DE19882055T DE19882055T1 DE 19882055 T1 DE19882055 T1 DE 19882055T1 DE 19882055 T DE19882055 T DE 19882055T DE 19882055 T DE19882055 T DE 19882055T DE 19882055 T1 DE19882055 T1 DE 19882055T1
- Authority
- DE
- Germany
- Prior art keywords
- mram
- magnetic vectors
- aligned magnetic
- aligned
- vectors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5616—Multilevel magnetic memory cell using non-magnetic conducting interlayer, e.g. GMR, SV, PSV
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/795,488 US5757695A (en) | 1997-02-05 | 1997-02-05 | Mram with aligned magnetic vectors |
PCT/US1998/001905 WO1998034231A1 (en) | 1997-02-05 | 1998-02-03 | Mram with aligned magnetic vectors |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19882055T1 true DE19882055T1 (de) | 2000-02-24 |
Family
ID=25165646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19882055T Ceased DE19882055T1 (de) | 1997-02-05 | 1998-02-03 | MRAM mit ausgerichteten magnetischen Vektoren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5757695A (de) |
JP (1) | JP2001510613A (de) |
DE (1) | DE19882055T1 (de) |
WO (1) | WO1998034231A1 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6590750B2 (en) | 1996-03-18 | 2003-07-08 | International Business Machines Corporation | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices |
JP4124844B2 (ja) * | 1997-10-02 | 2008-07-23 | キヤノン株式会社 | 磁気薄膜メモリ |
US5928952A (en) * | 1997-11-05 | 1999-07-27 | Zymark Corporation | Scheduled system and method for processing chemical products |
US6147900A (en) * | 1997-11-06 | 2000-11-14 | Nonvolatile Electronics, Incorporated | Spin dependent tunneling memory |
US6242770B1 (en) | 1998-08-31 | 2001-06-05 | Gary Bela Bronner | Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same |
US6005800A (en) * | 1998-11-23 | 1999-12-21 | International Business Machines Corporation | Magnetic memory array with paired asymmetric memory cells for improved write margin |
US6391483B1 (en) | 1999-03-30 | 2002-05-21 | Carnegie Mellon University | Magnetic device and method of forming same |
JP2003503835A (ja) * | 1999-06-25 | 2003-01-28 | モトローラ・インコーポレイテッド | 低スイッチング磁界で動作するmramセル |
US6391658B1 (en) | 1999-10-26 | 2002-05-21 | International Business Machines Corporation | Formation of arrays of microelectronic elements |
US6205053B1 (en) * | 2000-06-20 | 2001-03-20 | Hewlett-Packard Company | Magnetically stable magnetoresistive memory element |
US6538921B2 (en) * | 2000-08-17 | 2003-03-25 | Nve Corporation | Circuit selection of magnetic memory cells and related cell structures |
US6579625B1 (en) * | 2000-10-24 | 2003-06-17 | Motorola, Inc. | Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers |
JP4458703B2 (ja) | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
US6466475B1 (en) | 2001-10-31 | 2002-10-15 | Hewlett-Packard Company | Uniform magnetic environment for cells in an MRAM array |
US6798691B1 (en) | 2002-03-07 | 2004-09-28 | Silicon Magnetic Systems | Asymmetric dot shape for increasing select-unselect margin in MRAM devices |
JP3769241B2 (ja) * | 2002-03-29 | 2006-04-19 | 株式会社東芝 | 磁気抵抗効果素子及び磁気メモリ |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
JP3684225B2 (ja) * | 2002-09-30 | 2005-08-17 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
US6956257B2 (en) * | 2002-11-18 | 2005-10-18 | Carnegie Mellon University | Magnetic memory element and memory device including same |
KR100468861B1 (ko) * | 2003-01-07 | 2005-01-29 | 삼성전자주식회사 | 고선택성을 가지는 자기저항 메모리 |
JP2004296859A (ja) * | 2003-03-27 | 2004-10-21 | Renesas Technology Corp | 磁気記録素子及び磁気記録素子の製造方法 |
US6785160B1 (en) * | 2003-04-29 | 2004-08-31 | Hewlett-Packard Development Company, L.P. | Method of providing stability of a magnetic memory cell |
US7274080B1 (en) * | 2003-08-22 | 2007-09-25 | International Business Machines Corporation | MgO-based tunnel spin injectors |
US7029941B2 (en) * | 2003-08-25 | 2006-04-18 | Headway Technologies, Inc. | Magnetic random access memory designs with controlled magnetic switching mechanism |
US6943040B2 (en) * | 2003-08-28 | 2005-09-13 | Headway Technologes, Inc. | Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling |
US6929957B2 (en) * | 2003-09-12 | 2005-08-16 | Headway Technologies, Inc. | Magnetic random access memory designs with patterned and stabilized magnetic shields |
US20050141148A1 (en) * | 2003-12-02 | 2005-06-30 | Kabushiki Kaisha Toshiba | Magnetic memory |
US7105372B2 (en) * | 2004-01-20 | 2006-09-12 | Headway Technologies, Inc. | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy |
JP2005317739A (ja) * | 2004-04-28 | 2005-11-10 | Toshiba Corp | 磁気記憶装置およびその製造方法 |
US7580228B1 (en) * | 2004-05-29 | 2009-08-25 | Lauer Mark A | Current perpendicular to plane sensor with non-rectangular sense layer stack |
US20060101111A1 (en) * | 2004-10-05 | 2006-05-11 | Csi Technology, Inc. | Method and apparatus transferring arbitrary binary data over a fieldbus network |
US7599156B2 (en) * | 2004-10-08 | 2009-10-06 | Kabushiki Kaisha Toshiba | Magnetoresistive element having specially shaped ferromagnetic layer |
US7355884B2 (en) * | 2004-10-08 | 2008-04-08 | Kabushiki Kaisha Toshiba | Magnetoresistive element |
JP4468258B2 (ja) * | 2005-07-15 | 2010-05-26 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
US20070019337A1 (en) * | 2005-07-19 | 2007-01-25 | Dmytro Apalkov | Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements |
US7486552B2 (en) * | 2007-05-21 | 2009-02-03 | Grandis, Inc. | Method and system for providing a spin transfer device with improved switching characteristics |
WO2008154519A1 (en) * | 2007-06-12 | 2008-12-18 | Grandis, Inc. | Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3448438A (en) * | 1965-03-19 | 1969-06-03 | Hughes Aircraft Co | Thin film nondestructive memory |
US4731757A (en) * | 1986-06-27 | 1988-03-15 | Honeywell Inc. | Magnetoresistive memory including thin film storage cells having tapered ends |
JPH0721848B2 (ja) * | 1987-02-17 | 1995-03-08 | シーゲイト テクノロジー インターナショナル | 磁気抵抗センサ及びその製造方法 |
JPH01149285A (ja) * | 1987-12-04 | 1989-06-12 | Hitachi Ltd | 磁性薄膜記憶素子 |
US5420819A (en) * | 1992-09-24 | 1995-05-30 | Nonvolatile Electronics, Incorporated | Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage |
US5343422A (en) * | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
DE4327458C2 (de) * | 1993-08-16 | 1996-09-05 | Inst Mikrostrukturtechnologie | Sensorchip zur hochauflösenden Messung der magnetischen Feldstärke |
JPH0766033A (ja) * | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ |
-
1997
- 1997-02-05 US US08/795,488 patent/US5757695A/en not_active Expired - Lifetime
-
1998
- 1998-02-03 DE DE19882055T patent/DE19882055T1/de not_active Ceased
- 1998-02-03 WO PCT/US1998/001905 patent/WO1998034231A1/en active Application Filing
- 1998-02-03 JP JP53315798A patent/JP2001510613A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
JP2001510613A (ja) | 2001-07-31 |
US5757695A (en) | 1998-05-26 |
WO1998034231A1 (en) | 1998-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8128 | New person/name/address of the agent |
Representative=s name: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 8033 |
|
8131 | Rejection |