DE19842881A1 - Halbleiter-Optosensor - Google Patents
Halbleiter-OptosensorInfo
- Publication number
- DE19842881A1 DE19842881A1 DE19842881A DE19842881A DE19842881A1 DE 19842881 A1 DE19842881 A1 DE 19842881A1 DE 19842881 A DE19842881 A DE 19842881A DE 19842881 A DE19842881 A DE 19842881A DE 19842881 A1 DE19842881 A1 DE 19842881A1
- Authority
- DE
- Germany
- Prior art keywords
- housing
- transparent
- sensor chip
- filler
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000945 filler Substances 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 48
- 239000010408 film Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 239000002184 metal Substances 0.000 description 14
- 239000004033 plastic Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 12
- 230000008602 contraction Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Description
Claims (8)
ein isolierendes Gehäuse (1),
Verdrahtungsmittel (2), die sich von der Innenseite zur Außenseite des Gehäuses (1) erstrecken,
einen optischen Sensorchip (6) aus Halbleitermaterial, der am Boden des Gehäuses (1) befestigt ist,
an dem Sensorchip (6) vorgesehene Anschlußmittel,
Verbindungsmittel (3) zum Verbinden der Anschlußmittel mit den Verdrahtungsmitteln (2),
einen transparenten Füllstoff, der in das Gehäuse (1) gefüllt ist und die Oberseite des Sensorchips (6) bedeckt, und
eine oberhalb des Sensorchips (6) unter Zwischenlage des Füllstoffs angeordnete trans parente Platte (5),
dadurch gekennzeichnet, daß im Boden des Gehäuses (1) Löcher (1a, 1b) vorgesehen sind, mit denen der transparente Füllstoff (4) in Verbindung steht.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9256486A JPH1197656A (ja) | 1997-09-22 | 1997-09-22 | 半導体光センサデバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19842881A1 true DE19842881A1 (de) | 1999-03-25 |
Family
ID=17293317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19842881A Withdrawn DE19842881A1 (de) | 1997-09-22 | 1998-09-18 | Halbleiter-Optosensor |
Country Status (4)
Country | Link |
---|---|
US (1) | US6121675A (de) |
JP (1) | JPH1197656A (de) |
KR (1) | KR100589922B1 (de) |
DE (1) | DE19842881A1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19947437A1 (de) * | 1999-10-02 | 2001-04-05 | Valeo Schalter & Sensoren Gmbh | Sensor |
DE102004045854A1 (de) * | 2004-09-20 | 2006-04-06 | Infineon Technologies Ag | Halbleitersensor mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben |
EP3470797A1 (de) * | 2017-10-10 | 2019-04-17 | Sick AG | Optoelektronischer sensor |
DE102005025754B4 (de) | 2005-06-02 | 2019-08-08 | Infineon Technologies Ag | Halbleitersensorbauteil mit einem Sensorchip und Verfahren zur Herstellung von Halbleitersensorbauteilen |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19840829B4 (de) * | 1998-09-07 | 2005-10-20 | Siemens Ag | Verfahren zum Befestigen eines mikromechanischen Sensors in einem Gehäuse und Sensoranordnung |
US6753922B1 (en) * | 1998-10-13 | 2004-06-22 | Intel Corporation | Image sensor mounted by mass reflow |
DE19958229B4 (de) * | 1998-12-09 | 2007-05-31 | Fuji Electric Co., Ltd., Kawasaki | Optisches Halbleiter-Sensorbauelement |
JP4565727B2 (ja) * | 2000-10-10 | 2010-10-20 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6564454B1 (en) | 2000-12-28 | 2003-05-20 | Amkor Technology, Inc. | Method of making and stacking a semiconductor package |
CN2457740Y (zh) * | 2001-01-09 | 2001-10-31 | 台湾沛晶股份有限公司 | 集成电路晶片的构装 |
US6635876B2 (en) * | 2001-03-13 | 2003-10-21 | Infocus Corporation | Low-loss non-imaging optical concentrator for use in infrared remote control systems |
US7276394B2 (en) * | 2001-09-20 | 2007-10-02 | Eastman Kodak Company | Large area flat image sensor assembly |
US20030054583A1 (en) * | 2001-09-20 | 2003-03-20 | Eastman Kodak Company | Method for producing an image sensor assembly |
JP3980933B2 (ja) * | 2002-05-23 | 2007-09-26 | ローム株式会社 | イメージセンサモジュールの製造方法 |
CA2391756A1 (en) * | 2002-06-26 | 2003-12-26 | Ibm Canada Limited-Ibm Canada Limitee | Accessing a remote iseries or as/400 computer system from the eclipse integrated development environment |
JP3882738B2 (ja) * | 2002-10-24 | 2007-02-21 | ソニー株式会社 | 複合チップモジュール及びその製造方法、並びに複合チップユニット及びその製造方法 |
US6900531B2 (en) * | 2002-10-25 | 2005-05-31 | Freescale Semiconductor, Inc. | Image sensor device |
US6667543B1 (en) * | 2002-10-29 | 2003-12-23 | Motorola, Inc. | Optical sensor package |
US20040140420A1 (en) * | 2003-01-16 | 2004-07-22 | Ken Dai | Image sensor having increased number of pixels |
DE10361650A1 (de) * | 2003-12-30 | 2005-08-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zu dessen Herstellung |
US6905910B1 (en) | 2004-01-06 | 2005-06-14 | Freescale Semiconductor, Inc. | Method of packaging an optical sensor |
JP2005217322A (ja) * | 2004-01-30 | 2005-08-11 | Toshiba Corp | 固体撮像装置用半導体素子とそれを用いた固体撮像装置 |
TWI228811B (en) * | 2004-05-28 | 2005-03-01 | Taiwan Electronic Packaging Co | Package for integrated circuit chip |
DE102004043663B4 (de) * | 2004-09-07 | 2006-06-08 | Infineon Technologies Ag | Halbleitersensorbauteil mit Hohlraumgehäuse und Sensorchip und Verfahren zur Herstellung eines Halbleitersensorbauteils mit Hohlraumgehäuse und Sensorchip |
JP4676735B2 (ja) * | 2004-09-22 | 2011-04-27 | 東レ・ダウコーニング株式会社 | 光半導体装置の製造方法および光半導体装置 |
JP2009515352A (ja) * | 2005-11-09 | 2009-04-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 少なくとも1つのマイクロエレクトロニクス素子を密封するパッケージキャリアの製造方法及び診断素子の製造方法 |
DE102006011753B4 (de) * | 2006-03-13 | 2021-01-28 | Infineon Technologies Ag | Halbleitersensorbauteil, Verfahren zur Herstellung eines Nutzens und Verfahren zur Herstellung von Halbleitersensorbauteilen |
US7915717B2 (en) * | 2008-08-18 | 2011-03-29 | Eastman Kodak Company | Plastic image sensor packaging for image sensors |
JP2010166021A (ja) * | 2008-12-18 | 2010-07-29 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2010192866A (ja) * | 2009-01-20 | 2010-09-02 | Panasonic Corp | 光学デバイス、固体撮像装置、及び光学デバイスの製造方法 |
DE102009001930B4 (de) * | 2009-03-27 | 2018-01-04 | Robert Bosch Gmbh | Sensorbaustein |
US8245575B2 (en) * | 2009-12-08 | 2012-08-21 | Jen-Huang Albert Chiou | Pressure sensor device with breakwater to reduce protective gel vibration |
WO2011143638A2 (en) * | 2010-05-14 | 2011-11-17 | The Regents Of The University Of California | Vacuum photosensor device with electron lensing |
DE102011080971A1 (de) * | 2011-08-16 | 2013-02-21 | Robert Bosch Gmbh | Sensor, Sensoreinheit und Verfahren zur Herstellung einer Sensoreinheit |
TWI540709B (zh) * | 2012-12-28 | 2016-07-01 | 群豐科技股份有限公司 | 光電封裝體及其製造方法 |
JP2016076669A (ja) * | 2014-10-09 | 2016-05-12 | クラスターテクノロジー株式会社 | 半導体素子実装パッケージおよびその製造方法、ならびに当該パッケージ製造のための基板プレート |
JP6567241B1 (ja) * | 2018-06-12 | 2019-08-28 | 三菱電機株式会社 | パワー半導体モジュール及び電力変換装置 |
US11935773B2 (en) * | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5923551A (ja) * | 1982-07-30 | 1984-02-07 | Sharp Corp | ダイレクトボンデイング回路基板 |
JPS59167037A (ja) * | 1983-03-14 | 1984-09-20 | Oki Electric Ind Co Ltd | 半導体装置 |
JPS6150351A (ja) * | 1984-08-20 | 1986-03-12 | Oki Electric Ind Co Ltd | Eprom装置 |
JPS6150353A (ja) * | 1984-08-20 | 1986-03-12 | Oki Electric Ind Co Ltd | Eprom装置 |
US4766095A (en) * | 1985-01-04 | 1988-08-23 | Oki Electric Industry Co., Ltd. | Method of manufacturing eprom device |
JPS6220359A (ja) * | 1985-07-18 | 1987-01-28 | Nec Corp | 紫外線消去型半導体装置 |
JPS62174956A (ja) * | 1986-01-28 | 1987-07-31 | Fujitsu Ltd | プラスチツク・モ−ルド型半導体装置 |
JPS63133654A (ja) * | 1986-11-26 | 1988-06-06 | Matsushita Electronics Corp | 光消去型半導体メモリ装置 |
US4961106A (en) * | 1987-03-27 | 1990-10-02 | Olin Corporation | Metal packages having improved thermal dissipation |
DE68911420T2 (de) * | 1988-08-18 | 1994-05-11 | Seiko Epson Corp | Festkörper-Bildaufnahmevorrichtung. |
US5324888A (en) * | 1992-10-13 | 1994-06-28 | Olin Corporation | Metal electronic package with reduced seal width |
KR940010290A (ko) * | 1992-10-16 | 1994-05-24 | 문정환 | 고체촬상소자 패키지 및 그 제조방법 |
JPH07183415A (ja) * | 1993-11-12 | 1995-07-21 | Sony Corp | 半導体装置およびその製造方法 |
JPH08236739A (ja) * | 1995-02-28 | 1996-09-13 | Nippon Chemicon Corp | Ccdモジュールの封止構造 |
JPH08236738A (ja) * | 1995-02-28 | 1996-09-13 | Nippon Chemicon Corp | Ccdモジュールの樹脂封止方法 |
US5962810A (en) * | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
-
1997
- 1997-09-22 JP JP9256486A patent/JPH1197656A/ja active Pending
-
1998
- 1998-09-15 US US09/153,741 patent/US6121675A/en not_active Expired - Fee Related
- 1998-09-17 KR KR1019980038376A patent/KR100589922B1/ko not_active IP Right Cessation
- 1998-09-18 DE DE19842881A patent/DE19842881A1/de not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19947437A1 (de) * | 1999-10-02 | 2001-04-05 | Valeo Schalter & Sensoren Gmbh | Sensor |
DE102004045854A1 (de) * | 2004-09-20 | 2006-04-06 | Infineon Technologies Ag | Halbleitersensor mit einem Hohlraumgehäuse und Verfahren zur Herstellung desselben |
DE102004045854B4 (de) * | 2004-09-20 | 2017-08-31 | Infineon Technologies Ag | Verfahren zur Herstellung mehrerer Halbleitersensoren mit Halbleitersensorchips in Hohlraumgehäusen |
DE102005025754B4 (de) | 2005-06-02 | 2019-08-08 | Infineon Technologies Ag | Halbleitersensorbauteil mit einem Sensorchip und Verfahren zur Herstellung von Halbleitersensorbauteilen |
EP3470797A1 (de) * | 2017-10-10 | 2019-04-17 | Sick AG | Optoelektronischer sensor |
Also Published As
Publication number | Publication date |
---|---|
US6121675A (en) | 2000-09-19 |
JPH1197656A (ja) | 1999-04-09 |
KR100589922B1 (ko) | 2006-10-24 |
KR19990029874A (ko) | 1999-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8125 | Change of the main classification |
Ipc: H01L 2304 |
|
8127 | New person/name/address of the applicant |
Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP |
|
8128 | New person/name/address of the agent |
Representative=s name: MERH-IP MATIAS ERNY REICHL HOFFMANN, 80336 MUENCHE |
|
R081 | Change of applicant/patentee |
Owner name: FUJI ELECTRIC CO., LTD., KAWASAKI-SHI, JP Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP Effective date: 20120614 Owner name: FUJI ELECTRIC CO., LTD., JP Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP Effective date: 20120614 |
|
R082 | Change of representative |
Representative=s name: MERH-IP MATIAS ERNY REICHL HOFFMANN PATENTANWA, DE Effective date: 20120614 Representative=s name: MERH-IP MATIAS ERNY REICHL HOFFMANN, DE Effective date: 20120614 |
|
R002 | Refusal decision in examination/registration proceedings | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |