DE19507130A1 - Silicon carbide device passivation with reduced field strength and barrier current - Google Patents
Silicon carbide device passivation with reduced field strength and barrier currentInfo
- Publication number
- DE19507130A1 DE19507130A1 DE19507130A DE19507130A DE19507130A1 DE 19507130 A1 DE19507130 A1 DE 19507130A1 DE 19507130 A DE19507130 A DE 19507130A DE 19507130 A DE19507130 A DE 19507130A DE 19507130 A1 DE19507130 A1 DE 19507130A1
- Authority
- DE
- Germany
- Prior art keywords
- implantation
- layer
- sic
- carried out
- field strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title description 9
- 229910010271 silicon carbide Inorganic materials 0.000 title description 9
- 230000004888 barrier function Effects 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000002513 implantation Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- -1 germanium ions Chemical class 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910020286 SiOxNy Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Die Erfindung betrifft ein Verfahren zur Passivierung von SiC-Bauelementen nach dem Oberbegriff des Anspruchs 1.The invention relates to a method for passivation of SiC components according to the preamble of claim 1.
Erhöhte elektrische Felder bilden sich in den Krümmungsbereichen der Raumladungszone und insbesondere an der Oberfläche von Halb leiter-Bauelementen. Die hohen Feldstärken reduzieren die Durchbruchspannung des Bauelements und führen an der Oberfläche zu Belastungen im dort deponierten Isolatormaterial. Es wurde daher angestrebt, durch Maßnahmen, wie die Entschärfung der Krümmung der Raumladungszone oder die geeignete Wahl einer Abdeckschicht, die Feldstärke herabzusetzen. Dazu wurden bei Silizium-Bauelementen Feldringe, Feldplatten oder sog. Mesa-Strukturen verwendet.Increased electric fields form in the areas of curvature Space charge zone and especially on the surface of half conductor components. The high field strengths reduce the Breakdown voltage of the component and lead to the surface Loads in the insulator material deposited there. It was therefore sought through measures such as defusing the curvature of the Space charge zone or the appropriate choice of a covering layer, the Reduce field strength. This was done with silicon components Field rings, field plates or so-called mesa structures are used.
In neuerer Zeit wird verstärkt der Einsatz von SiC für die Herstellung von Bauelementen mit Eigenschaften, die in Silizium nicht realisierbar sind, getestet. Ein wesentlicher Materialparameter eines Halbleitermaterials ist seine maximale elektrische Feldstärke. Das sog. kritische Feld, ist in SiC ca. um den Faktor 10 höher als in Silizium. Diese hohen Feldstärken treten an der Oberfläche des kristallinen Materials auf und belasten die Abdeckschicht, wobei das Abdeckmaterial mit der Zeit geschwächt oder zerstört wird.In recent times, the use of SiC for production has increased of components with properties that cannot be realized in silicon are tested. An essential material parameter of a Semiconductor material is its maximum electrical field strength. The so-called critical field, is about 10 times higher in SiC than in silicon. These high field strengths occur on the surface of the crystalline Material on and burden the cover layer, the cover material is weakened or destroyed over time.
Bei SiC liegt das kritische Feld zwischen 1-10 MV/cm und damit in derselben Größenordnung wie das eines guten Isolators, beispielsweise thermisch aufgewachsenes Siliziumdioxid (SiO₂). Aus der Veröffentlichung von D. Alok, B.J. Baliga und P.K. Mc Larty: "A Simple Edge Termination for Silicon Carbide Devices with Nearly Ideal Breakdown Voltage", IEEE Electron Device Letters, Vol. 15, No. 1f, October 1994, S. 394-395, von der die Erfindung ausgeht, ist ein Verfahren bekannt, um die Feldstärke an den Kanten eines Bauelementes durch die Bildung einer amorphen Schicht herabzusetzen. The critical field for SiC is between 1-10 MV / cm and thus in the same order of magnitude as that of a good insulator, for example thermally grown silicon dioxide (SiO₂). From the publication by D. Alok, B.J. Baliga and P.K. Mc Larty: "A Simple Edge Termination for Silicon Carbide Devices with Nearly Ideal Breakdown Voltage ", IEEE Electron Device Letters, Vol. 15, No. 1f, October 1994, pp. 394-395, from starting from the invention, a method is known to measure the field strength on the edges of a component through the formation of an amorphous Layer down.
Durch die Implantation von Argon-Ionen wurde die Durchbruchsspannung von Schottky-Barriere-Dioden annähernd auf den Wert für die Durchbruchspannung im Volumen heraufgesetzt.Through the implantation of argon ions, the Breakdown voltage of Schottky barrier diodes approximately to the Breakdown voltage value increased in volume.
Ein Nachteil dieser Methode ist der hierdurch bedingte sehr hohe Strom im Sperrfall der Diode.A disadvantage of this method is the very high current it causes when the diode is off.
Es ist daher Aufgabe der Erfindung, eine alternative Passivierungsmethode anzugeben, welche durch eine Wasserstoff-Nach behandlung bei niedrigen Temperaturen die Feldstärke und den Sperrstrom herabsetzt.It is therefore an object of the invention to provide an alternative Passivation method specified by a hydrogen after treatment at low temperatures the field strength and the Reduced reverse current.
Diese Aufgabe wird durch die im Kennzeichen des Anspruchs 1 aufgeführten Merkmale gelöst. Weiterbildungen der Erfindung sind in den Unteransprüchen beschrieben.This object is achieved in the characterizing part of claim 1 listed features solved. Developments of the invention are in described the subclaims.
Ausführungsbeispiele der Erfindung werden nachstehend anhand der Zeichnung näher erläutert.Embodiments of the invention are described below with reference to the Drawing explained in more detail.
Dabei zeigt:It shows:
Fig. 1 eine einfache Ausführungsform; Fig. 1 shows a simple embodiment;
Fig. 2 gemessene Kennlinien nach verschiedener Behandlung und Fig. 2 measured characteristics after different treatment and
Fig. 3 eine Ausführungsform mit Passivierungsschicht. Fig. 3 shows an embodiment with a passivation layer.
Das erfindungsgemäße Verfahren wird auf eine Schottky-Diode
angewandt, welche folgenden Aufbau hat:
Auf einem Halbleitersubstrat 1, das vorzugsweise aus Silizium oder SiC
besteht, wird eine SiC-Epitaxieschicht 2 aufgebracht. Die Schottky-Diode
wird dadurch gebildet, indem auf diese Epitaxieschicht ein Metall 4
aufgebracht wird (z. B. Titan, Aluminium, Platin, Gold . . . ). Dies kann
durch Sputtern oder Verdampfen eines Metalls geschehen. Wird keine
Schattenmaske zum Strukturieren des Metalls verwendet, geschieht diese
mittels "Lift-Off"-Technik oder nach einem Fotolithographieschritt durch
Ätzen. Anschließend daran werden selbstjustierend zu dem
Metallkontaktrand Ionen mit so hoher Dosis implantiert, daß sich eine
amorphe Schicht 3 an den Rändern zum Metall bildet.
The inventive method is applied to a Schottky diode, which has the following structure:
An SiC epitaxial layer 2 is applied to a semiconductor substrate 1 , which preferably consists of silicon or SiC. The Schottky diode is formed by applying a metal 4 to this epitaxial layer (eg titanium, aluminum, platinum, gold...). This can be done by sputtering or evaporating a metal. If no shadow mask is used for structuring the metal, this is done using the "lift-off" technique or by etching after a photolithography step. Then, self-aligning to the metal contact edge, ions are implanted with such a high dose that an amorphous layer 3 forms at the edges of the metal.
Erfindungsgemäß muß diese Schicht nachbehandelt werden. Bei Implantation von Sauerstoffionen muß das Metall 4 noch durch eine zusätzliche Schutzschicht 5 abgedeckt werden. Hierzu kann Silizium-Nitrid verwendet werden (s. Fig. 1).According to the invention, this layer must be post-treated. When implanting oxygen ions, the metal 4 must still be covered by an additional protective layer 5 . Silicon nitride can be used for this (see FIG. 1).
Die so hergestellte Diode wurde an der Oberfläche durch Argon-Implantation mit einer Energie von E = 30 keV und einer Teilchendosis von D = 10¹⁵ cm-2 bei Raumtemperatur amorphisiert.The diode thus produced was amorphized on the surface by argon implantation with an energy of E = 30 keV and a particle dose of D = 10¹ 10 cm -2 at room temperature.
Fig. 2 zeigt die gemessenen Strom-Spannungskennlinien der Dioden. Die gepunktete Linie zeigt die ursprüngliche Diode vor der Argon-Implantation mit einer relativ niedrigen Durchbruchspannung von ca. 450 Volt. Durch die Amorphisierung steigt diese auf über 1000 Volt an (strichpunktierte Linie). Es ist jedoch deutlich die Erhöhung des Sperrstromniveaus zu erkennen. Fig. 2 shows the measured current-voltage characteristics shows the diodes. The dotted line shows the original diode before the argon implantation with a relatively low breakdown voltage of approx. 450 volts. The amorphization increases this to over 1000 volts (dash-dotted line). However, the increase in the reverse current level can be clearly seen.
Erst die nachfolgende Behandlung in einer Atmosphäre mit 15% Wasserstoff in Argon kann diesen Sperrstrom wieder deutlich reduzieren bei gleichbleibend hoher Durchbruchspannung. Die Leitfähigkeit der amorphen Schicht, aus der die sehr hohen Sperrströme resultieren, wird erst durch die Wasserstoff-Temperung auf ein brauchbares Maß verringert.Only the subsequent treatment in an atmosphere 15% hydrogen in argon can clear this reverse current again reduce with consistently high breakdown voltage. The Conductivity of the amorphous layer from which the very high reverse currents result, is only due to the hydrogen tempering on usable dimension reduced.
Der Verlauf des Stromes bei den implantierten Dioden zeigt deutlich, daß die Randschicht wie ein Parallelwiderstand wirkt. Die Größe dieses Widerstandes wird durch die Wasserstoff-Nachbehandlung deutlich erhöht, d. h. die linearen Bereiche in der Strom-Spannungscharakteristik verschieben sich zu kleineren Stromwerten hin.The course of the current in the implanted diodes clearly shows that the boundary layer acts like a parallel resistor. The size of this Resistance becomes clear through the hydrogen aftertreatment increased, d. H. the linear areas in the Current-voltage characteristics shift towards smaller current values.
Die deutliche Absenkung des Stromniveaus bereits nach einer Temperung von 300°C zeigt deutlich die Wirkung des Wasserstoffs. Ein reiner Ausheileffekt ist bei dieser geringen Temperatur nicht zu erwarten.The significant lowering of the current level after tempering of 300 ° C clearly shows the effect of hydrogen. A pure one Healing effect is not expected at this low temperature.
Der Wasserstoff wirkt beim Tempern passivierend auf Defekte in der Übergangsschicht zwischen der vollständig amorphen Schicht und dem einkristallinen Bereich der epitaktisch aufgewachsenen SiC-Schicht, sowie auf ungesättigte Bindungen innerhalb der amorphen Schicht. The hydrogen has a passivating effect on defects in the Transition layer between the completely amorphous layer and the single-crystalline region of the epitaxially grown SiC layer, as well as unsaturated bonds within the amorphous layer.
Beide Bereiche tragen zum stark erhöhten Parallelstrom bei. Das beste Ergebnis wurde für eine Wasserstoff-Temperung bei 500°C in 15% H₂ in Argon erzielt. Der Sperrstrom bei -100 Volt sinkt hierbei von 2 · 10-2 A/cm-2 auf 3 · 10-4 A/cm², also um ca. zwei Größenordnungen ab.Both areas contribute to the greatly increased parallel current. The best result was achieved for hydrogen tempering at 500 ° C in 15% H₂ in argon. The reverse current at -100 volts drops from 2 · 10 -2 A / cm -2 to 3 · 10 -4 A / cm², ie by approximately two orders of magnitude.
Bauelemente, wie sie auch für das Beispiel 1 benutzt wurden, wurden mit Germanium der Dosis D = 5 · 10¹⁴ cm-2 bei einer Energie E = 40 keV bei Raumtemperatur implantiert. Vor der Implantation (unpassivierte Diode) wies das Bauelement im Sperrbereich einen kleinen Sperrstrom, aber auch eine geringe Durchbruchsspannung auf. Nach der Implantation erhöht sich die Sperrspannung auf über 1000 Volt, jedoch hat sich auch der Sperrstrom deutlich erhöht. Die thermische Nachbehandlung in 15% Wasserstoffatmosphäre führt hier, wie auch bei der Implantation mit Argon, zu einer Reduktion des Sperrstroms bei -100 Volt auf 3 · 10-4 A/cm². Der Vorteil der Germanium-Implantation besteht darin, daß die Temperung hier bei 400°C erfolgen kann, während im Falle von Argon erst bei 500°C diese Stromreduzierung erreicht wird.Components, as they were also used for Example 1, were implanted with germanium of the dose D = 5 · 10¹⁴ cm -2 at an energy E = 40 keV at room temperature. Before the implantation (unpassivated diode), the component had a small reverse current in the blocking region, but also a low breakdown voltage. After the implantation, the reverse voltage increases to over 1000 volts, but the reverse current has also increased significantly. The thermal aftertreatment in a 15% hydrogen atmosphere leads here, as with the implantation with argon, to a reduction of the reverse current at -100 volts to 3 · 10 -4 A / cm². The advantage of germanium implantation is that the annealing can take place at 400 ° C, whereas in the case of argon this current reduction is only achieved at 500 ° C.
Bauelemente wie unter Beispiel 1, werden mit Germanium-Ionen implantiert. In einem Niedertemperatur-PECVD-Prozeß wird anschließend bei 400°C eine SiOxNy-Schicht 6 abgeschieden (s. Fig. 3). Diese passivierende Schicht schützt die Oberfläche des Bauelements vor äußeren Einflüssen und trägt somit zur Stabilisierung der erzielten Bauelementeigenschaften bei. Darüber hinaus wird durch das in diesem Verfahren verwendete Überangebot an Wasserstoff gleichzeitig die passivierende Wirkung auf die Germanium-implantierte Schicht, wie sie im Beispiel 2 beschrieben wurde, erzielt. Dies ersetzt demnach eine zusätzliche Wasserstofftemperung und erfolgt gleichzeitig bei Temperaturen um die 400°C, die sich bei Germanium als optimal herausgestellt haben.Components as in Example 1 are implanted with germanium ions. In a low temperature PECVD process is then deposited at 400 ° C, an SiO x N y layer 6 (s. Fig. 3). This passivating layer protects the surface of the component from external influences and thus contributes to the stabilization of the component properties achieved. In addition, the excess supply of hydrogen used in this process simultaneously achieves the passivating effect on the germanium-implanted layer, as described in Example 2. This therefore replaces additional hydrogen tempering and takes place at the same time at temperatures around 400 ° C, which have been found to be optimal with germanium.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19507130A DE19507130C2 (en) | 1995-03-01 | 1995-03-01 | Passivation of SiC components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19507130A DE19507130C2 (en) | 1995-03-01 | 1995-03-01 | Passivation of SiC components |
Publications (2)
Publication Number | Publication Date |
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DE19507130A1 true DE19507130A1 (en) | 1996-10-10 |
DE19507130C2 DE19507130C2 (en) | 1997-08-21 |
Family
ID=7755347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19507130A Expired - Lifetime DE19507130C2 (en) | 1995-03-01 | 1995-03-01 | Passivation of SiC components |
Country Status (1)
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001037328A1 (en) * | 1999-11-15 | 2001-05-25 | Infineon Technologies Ag | Method for treating a surface of an sic semiconductor layer and schottky contact |
US6373076B1 (en) | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161743A (en) * | 1977-03-28 | 1979-07-17 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat |
US4532022A (en) * | 1979-09-14 | 1985-07-30 | Fujitsu Limited | Process of producing a semiconductor device |
DE3700620A1 (en) * | 1986-01-16 | 1987-07-23 | Rca Corp | SEMICONDUCTOR BODY AND METHOD FOR PRODUCING THE SAME |
DE3346803C2 (en) * | 1982-12-24 | 1991-08-29 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa, Jp |
-
1995
- 1995-03-01 DE DE19507130A patent/DE19507130C2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4161743A (en) * | 1977-03-28 | 1979-07-17 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat |
US4532022A (en) * | 1979-09-14 | 1985-07-30 | Fujitsu Limited | Process of producing a semiconductor device |
DE3346803C2 (en) * | 1982-12-24 | 1991-08-29 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa, Jp | |
DE3700620A1 (en) * | 1986-01-16 | 1987-07-23 | Rca Corp | SEMICONDUCTOR BODY AND METHOD FOR PRODUCING THE SAME |
Non-Patent Citations (4)
Title |
---|
Appl.Phys. Letters, Bd. 59 (14) (1991)S.1770-1772 * |
Appl.Phys. Letters, Bd. 66 (Febr. 1995) S.712-714 * |
IEEE Circuits and Devices (Jan. 1992) S. 22-26 * |
IEEE Electron Device Letters, Bd. 15 (1994) S. 394-395 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001037328A1 (en) * | 1999-11-15 | 2001-05-25 | Infineon Technologies Ag | Method for treating a surface of an sic semiconductor layer and schottky contact |
US6905916B2 (en) | 1999-11-15 | 2005-06-14 | Infineon Technologies Ag | Method for processing a surface of an SiC semiconductor layer and Schottky contact |
US6373076B1 (en) | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
US6703276B2 (en) * | 1999-12-07 | 2004-03-09 | Koninklijke Philips Electronics N.V. | Passivated silicon carbide devices with low leakage current and method of fabricating |
Also Published As
Publication number | Publication date |
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DE19507130C2 (en) | 1997-08-21 |
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