DE1907567A1 - Electrical circuit unit - Google Patents

Electrical circuit unit

Info

Publication number
DE1907567A1
DE1907567A1 DE19691907567 DE1907567A DE1907567A1 DE 1907567 A1 DE1907567 A1 DE 1907567A1 DE 19691907567 DE19691907567 DE 19691907567 DE 1907567 A DE1907567 A DE 1907567A DE 1907567 A1 DE1907567 A1 DE 1907567A1
Authority
DE
Germany
Prior art keywords
substrate body
circuit unit
electrical circuit
conductors
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691907567
Other languages
German (de)
Inventor
Lole John Denis
Davies Stanley Ellis
Hodgson Brian Purdam
Mcmillan Peter William
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
English Electric Co Ltd
Original Assignee
English Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by English Electric Co Ltd filed Critical English Electric Co Ltd
Publication of DE1907567A1 publication Critical patent/DE1907567A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Description

Patentanwalt· Dip!. Ing. C. WallachPatent attorney Dip !. Ing.C. Wallach

Dr. T. hsibach
8 München 2
Kiufln9«sfr.8;TeJ.24O275 . I4Dr. T. hsibach
8 Munich 2
Kiufln9 «sfr.8; TeJ.24O275. I4

11 83? - H/Jä The English Electric Company Limited, London W.C.2/England11 83? - H / YES The English Electric Company Limited, London W.C. 2 / England

Elektrische SchaltungseinheitElectrical circuit unit

Die Erfindung betrifft eine elektrische Schaltungseinheit, welche auf einem Substratkörper mehrere Schichten von gegeneinander isolierten Leitern zur Verbindung mehrerer Schaltungsbaut'Dile aufweist. YThe invention relates to an electrical circuit unit, which on a substrate body several layers of each other insulated conductors for connecting several circuit components having. Y

Derartige Schaltungseinheiten können entweder vom Typ der normalen gedruckten Schaltungen mit diskreten Schaltbauteilen wie beispielsweise Widerständen oder Transistoren sein, oder Bie können auch vom Hybridsohaltungstyp sein, bei ' welchem die Sdbaltbauteile integrierte Schaltungen sind. Bei derartigen Schaltungseinheiten, und insbesondere bei Einheiten von d«m zuletztgenannten Typ mit integrierten Schaltungen als Schaltbauteilev ergeben sich Probleme hinsiiihtlich der Kühlung der Schaltungseinheit. Durch die vorliegende Erfindung soll eine SchältungBeinheit geschaffen werden, bei welcher dieao-Kühlungsprobleme weitgehend oder vollständig gelöst sind.Such circuit units can either be of the type the normal printed circuits with discrete switching components such as resistors or transistors, or Bie can also be of the hybrid type, with ' which the SDB components are integrated circuits. In such circuit units, and in particular in Units of the latter type with integrated Circuits as switching components result in problems with regard to the cooling of the circuit unit. Through the The present invention is intended to provide a peeling unit can be created in which the ao cooling problems are largely or completely resolved.

Zu diesem ?weck itst bei einer elektrischen Schaltungseinheit der genannten Art gemäß der Erfindung vorgesehen, dafl der Substratkörpti- eine isolierte Metallplatte von hohem elektrischem una Wärmeleitvermögen ist, welche als Speisespannungszufuhrebene und als WÄrnicsenke dient. VbrjeugsweieeAt this point you wake up in an electrical circuit unit of the type mentioned provided according to the invention, dafl the substrate body - an insulated metal plate of high electrical and thermal conductivity, which is used as the supply voltage supply level and serves as a heat sink. Vbrjeugsweiee

9Q98 38/127 8l· BAD ORIGINAL9Q98 38/127 8l ORIGINAL BATHROOM

kann vorgesehen sein, daß der Substragkörper sich über die Isolierschichten und die Leiterschichten hinaus erstreckt, ,it can be provided that the substrate body extends over the Insulating layers and extending beyond the conductor layers,

in einfacher Weise
derart, daß er/an einer Kühlmittelleitung bef©stigt. werden; kann. Die Isolierung besteht vorzugsweise aus Qlaskerasilk·» Werkstoff .Gemäß einer bevorzugten Ausführungsform -: kann vorgesehen sein, daß der Substratkörper die Leiter auf seiner einen Seite und auf seiner anderen Seit© eine Speisezufuhr- oder Anschlußebene trägt« mit welcher die Anschluß verbindungen über Drähte erfolgen, welche durch Löcher in dem Substratkörper hindurchführen und durch Glaskeramik isoliert sind.in a simple way
such that he / it is attached to a coolant line. will; can. The insulation is preferably made of Qlaskerasilk material. According to a preferred embodiment , it can be provided that the substrate body carries the conductors on one side and a supply or connection level on its other side, with which the connection is made via wires which pass through holes in the substrate body and are insulated by glass ceramic.

Die Erfindung betrifft auch ein Verfahren aur Herstellung einer derartigen Schaltungseinheit. Hierzu kann gemäß der Erfindung vorgesehen sein,,daß in dem Substratkörper Löcher ' gemäß einem vorgegebenen Muster erzeugt werden, daß man umhüllte Drähte durch diese Löcher hindurchsteckt, daß das» erhaltene Gebilde zur Versiegelung der Drähte in dem Substratkörper erhitzt wird, daß man die Oberflächen des Substratkörpers eben schleift und sodann auf dem Substratkörper die LeiterBchichten erzeugt.The invention also relates to a method of manufacture such a circuit unit. For this purpose, according to the Invention be provided, that holes' in the substrate body be generated according to a predetermined pattern that one sheathed wires through these holes so that the " obtained structure for sealing the wires in the Substrate body is heated so that the surfaces of the substrate body and then produced the conductor layers on the substrate body.

9098 38/127t9098 38 / 127t

Im folgenden wird ©in Ausführungsbeispiel einer Schaltungseinheit gemäß der Erfindung sowie des Herstellungsverfahrens hierfür an Hand der Zeichnung, beschrieben? in dieser zeigen?In the following, © is an exemplary embodiment of a circuit unit according to the invention and the manufacturing method for this on the basis of the drawing, described? in this show?

Fig. 1 die Schaltungseinheit in perspektivischer Ansicht,1 shows the circuit unit in a perspective view,

Pig. 2 eine Teilschnittansicht der Schaltungseinheit, mit einem daran angebrachten Schaltbauteil.Pig. 2 is a partial sectional view of the circuit unit, with a attached switching component.

Die Figuren sind nicht maßstabsgetreu.The figures are not true to scale.

Daß Substrat 10 der Schaltungseinheit ißt eine Kupferplatte von 50 χ 70 mm und 2,5 mm Dicke. Diese Platte ist in drei Bereiche 1OA, 1OB und IOC unterteilt; der Bereich lOA ist überzugsfrei und kann an eineRohrleitung j50 angeklemmt werden, durch welche ein Kühlmittel strömfcj der Bereich I.OB trSgt die Leiterschichten und die Schaltungsbauteilej der Bereich IOC schließlich trägt Rand-Anschlußzuleitungen 11 auf beiden Seiten. Die Bereiche 1OB und IOC sind an ihrer Unter- und Oberseite im wesentlichen vollständig mit Isolierschichten 12 und 14 überzogen, wobei auf der unteren Isolierschicht 12 eine im wesentlichen zusammenhängende Speise- bzw. Anschlußebene 13 vorgesehen ist. Auf der oberen Isolierschicht 14 ist ein Satz von Signalleitern 15 angeordnet} über der Schicht 14 und den Leitern 15 ist eine weitere Isolierschicht 16 vorgesehen, welche einen weiteren Satz von Signalleitern 17 trägt, die in Richtung quer zu den Leitern 15 verlaufen. Von der Speiae- bzw. Anschlußebene 1J> sind durchgehende Anschlußverbindungen zu den Signalleitern 15 und 17 sowie entsprechende durchgehende Anschlußverbindungen auch von den auf der Isolierschicht 12 angeordneten Randanschlüssen 11 zu den Signalleitern 15 und hergestellt. Dee weiteren bestehen Verbindungen zwischen dem Substrat 10 und den Leitern 15 und 17 sowie zwischen diesen Leifcersätzen selbst. In Ausnehmungen 18 in der Isolierschicht sind integrierte Schaltungen angeordnet.The substrate 10 of the circuit unit is a copper plate of 50 × 70 mm and 2.5 mm thick. This disk is divided into three areas 10A, 10B and IOC; The area IOA is free of coating and can be clamped to a pipe j50 through which a coolant flows. The area I.OB carries the conductor layers and the circuit components j the area IOC finally carries edge connection leads 11 on both sides. The areas 10B and IOC are essentially completely covered on their lower and upper sides with insulating layers 12 and 14, a substantially coherent supply or connection plane 13 being provided on the lower insulating layer 12. A set of signal conductors 15 is arranged on the upper insulating layer 14, a further insulating layer 16 is provided above the layer 14 and the conductors 15 and carries a further set of signal conductors 17 which run in the direction transverse to the conductors 15. Continuous connection connections to the signal conductors 15 and 17 and corresponding continuous connection connections also from the edge connections 11 arranged on the insulating layer 12 to the signal conductors 15 and 15 are established from the feeder or connection level 1J>. There are also connections between the substrate 10 and the conductors 15 and 17 and between these Leifcer sets themselves. Integrated circuits are arranged in recesses 18 in the insulating layer.

9 O 9 8 3 87 t£ 7 B' Xi?.?*" 9 O 9 8 3 87 t £ 7 B 'Xi?.? * "

"'"ORIGINAL·"'"ORIGINAL·

68. >68th> GeGe 9.79.7 IlIl 19·^19 ^ UU 2.62.6 IIII

Im folgenden wird nun die Herstellung einer derartigen Schaltungseinheit besahrieben. -The following is now the production of such Besahrieben circuit unit. -

Das Herstellungsverfahren geht von einem naokten Substratkörper 10 aus. Dieser wird durch Bohren oder anderweitige Durchlöcherung an vorgegebenen Stellen, etwa den Stellen 20 und 21/ an denen Anschlüsse zu der Speise- bstv. Anschlußebene hergestellt-werden sollen, mit Löchern versehen, die einen Durchmesser von einem Millimeter besitzen. Sodann werden kleine, rohrförmig© Preßkörper 22 aus einem entglasbaren Glas durch diese Löcher gesteckt und kurze Stücke aus'dünnem Kupferdraht 2> durch diese Glaskörper geführt. Eine hierfür geeignete Glaszusammensetzung ist wie folgt:The manufacturing process starts with a laced substrate body 10 off. This is done by drilling or other perforations at predetermined locations, such as locations 20 and 21 / Connections to the food service provider. Connection level to be produced should be provided with holes that have a diameter of one Own millimeters. Then small, tubular © pressed bodies 22 made of devitrifiable glass are inserted through these holes and short pieces of thin copper wire guided through this glass body. A suitable glass composition for this is as follows:

: SiO2
- Li2O
ZnO : SiO 2
- Li 2 O
ZnO

Das so erhaltene Gebilde wird 15 Minuten, lang in einer Stiekstoffatmosp&äre auf 1OQO0C erhitzt, um das Glas sum Schmelzen zu bringen und die Drahtdurchfuhrungeη durch das Substrat zu versiegeln* Danach wird das Gebilde rasch auf 5000G abgekühlt, eine Stunde lang.auf dieser Temperatur gehalten, sodann mit einer Geschwindigkeit von 5°C pro Minute auf 800°C erwärmt, eine Stunde lang auf dieserjPeiaperafeur gehalten und sodann in der Stickstoff&tmosphäre auf Zimmertemperatur abgekühlt. Diese Wärmebehandlung wandelt das Glas in den Durchführungs-Versiegelungen in eine hitzebeständig© Glaskeramik mit einem hohen Wärmeausdehnungskoeffizienten Uffio Danach werden jegliche überstehenden Drahtenden abgeschnitten und beide Flächen des Gebildes mit Siliziumkarbidpulver geschliffen i,derart, daß die Glaskeramik-Versiegelungen 22 und die Dr-ahtierideti 25 plan mit den Oberflächen, des Substratkörpers 10 sind. · -The structure thus obtained for 15 minutes, long in a Stiekstoffatmosp & ary on 1OQO 0 C heated to the glass to bring sum melt and seal the Drahtdurchfuhrungeη through the substrate * Thereafter, the assembly is rapidly cooled to 500 0 G, an hour lang.auf maintained at this temperature, then heated to 800 ° C at a rate of 5 ° C per minute, kept on this paper perfeur for one hour and then cooled to room temperature in a nitrogen atmosphere. This heat treatment transforms the glass in the bushing seals into a heat-resistant © glass ceramic with a high coefficient of thermal expansion.Uffio Then any protruding wire ends are cut off and both surfaces of the structure are ground with silicon carbide powder i so that the glass ceramic seals 22 and the Dr-ahtierideti 25 are plane with the surfaces of the substrate body 10. -

909838/1278909838/1278

Als nächstes werden nun auf dem Gebilde die beiden Isolierschichten 12 und 14 erzeugt. Für diese Schichten wird ein Glas der folgenden Zusammensetzung verwendettThe next step is to put the two insulating layers on top of the structure 12 and 14 generated. A glass is used for these layers of the following composition used

SiO2 SiO 2 54.254.2 Gew.% Weight % B2O3 B 2 O 3 5.05.0 Gew. % Weight % Li2QLi 2 Q 9.09.0 ' Il ' Il Na2ONa 2 O 5.05.0 HH ZnOZnO 24.424.4 WW.

2 5 ^·3 ·2 5 ^ 3

Und zwar wird eine Suspension von Glaspulver der vorstehenden Zusammensetzung in Methylalkohol zum Überziehen beider Seiten des Substratkörpers verwendet, wobei nur der Bereich 1OA an dem einen Ende des SubstratÜberzugs frei verbleibt. Das Substrat wird sodann 40 Minuten lang auf eine Temperatur von 95O0C erhitzt, um das Glaspulver zum Schmelzen zu bringen, wodurch glatte, gleichförmige Glasschichten von 50-75 Mikronjpioke entstehen. Danach wird das Gebilde, eine Stunde lang auf einer Temperatur von 50G0C gehalten, sodann mit einer Geschwindigkeit von 5°C pro Minute auf 75O0C erhitzt, eine Stunde lang auf dieser Temperatur gehalten und sodann Bit einer Geschwindigkeit von bis zu 10° C pro Minute auf Zimmertemperatur abgekühlt; diese sämtlichen Verfahrensschritte werden in einer Stickstoff-A suspension of glass powder of the above composition in methyl alcohol is used to coat both sides of the substrate body, with only the area 10A at one end of the substrate coating remaining free. The substrate is then heated for 40 minutes to a temperature of 95O 0 C in order to bring the glass powder to melt, whereby smooth, uniform glass layers of 50-75 micron jpi are formed. Thereafter, the structure, held for an hour at a temperature of 50G 0 C, then at a rate of 5 ° C per minute to 75O 0 C heated, held for an hour at this temperature and then bit at a speed of up to 10 ° C cooled down to room temperature per minute; all these process steps are carried out in a nitrogen

atmosphäre vorgenommen. Durch diese Wärmebehandlung werden die Glasschichten in hitzebeständige Glaskeramikschichten verwandelt.atmosphere made. By this heat treatment, the glass layers in heat-resistant glass ceramic layers are changed.

Der nächste Schritt in dem Herstellungsverfahren besteht sodann darin, die Durchführungsverbindungen 25 durch die Isolierschichten 12 und 14 hinduroh zu verlängern. Dies geschieht in der Weise, daß man die Glaskeramik nach Aufbringen eines geeigneten Fotoabdeckers mit einer !Oxigen Fluorwasserstoff-The next step in the manufacturing process is then therein, the feedthrough connections 25 through the insulating layers 12 and 14 hinduoh to extend. This is done in the way that, after applying a suitable photo masking agent, the glass ceramic can be covered with an! Oxygenated hydrogen fluoride

909838/1278 ./.909838/1278 ./.

BAD ORtCBNALBAD ORtCBNAL

säurelösung ätzt und sodann durch die so gebildeten ■_:-:'-'"^f^;'--LöcherJÄnschlüsse aus Kupfer auf plat ti er t, um die genannten "^ Verbindungen um den erforderlichen Betrag zu verlängern.acid solution and then etched through the thus formed ■ _: -: '-'"^ f ^ '- LöcherJÄnschlüsse of copper on plat he ti t, around said" to extend ^ compounds by the required amount.

Ale nächster Herstellungsverfahrensschritt werden die Randanschlüsse 11, die Speisespannungszufuhrebene 13 sow^e . die eine Signalleiterebene bildenden Leiter 15 hergestellt. Die Randanschlüsse 11 sind jeweils 1,25 mm brett, iit Zwischenräumen der gleichen Breite; die Spanmmgszufuhretoöne IJ ist eine zusammenhängende Metallschichtι die Leiter 15 schließlich sind jeweils 0,125 mm breit mit Zwisefeenabständen . von 0,25 mm. Diese Leiter werden nach herkömmlichen Siefedrueteverfahren unter Verwendung einer Paste hergestellt, welche aus in einem geeigneten organischen TrägeiHuittel dlsperglerfcem Goldpulver oder Gold- und Platinpulver besteht. Das so feedruefcte Gebilde wird sodann zum Ausheizen des organischen^ Trägermaterials an der Luft auf eine Temperatur von %5O°G erhitzt und sodann in einer Stickstoff atmosphäre weiter auf 75© oder 800°C erhitzt, um die Metallteilchen in den gedruckten Leitern zu konsolidieren bzw. zu verdichten, derart, daß die gedruckten Leiter hochleitend werden. Durch dieses Verfahren werden gleichzeitig auch die Anschlußverbindungen mit den aufplattierten Durchführungsverbindungen durch die Isolierschichten 12 und 14 hergestellt. - "■■ .The next manufacturing process step will be the Edge connections 11, the supply voltage supply plane 13 as well as. the conductors 15 forming a signal conductor plane are produced. The edge connections 11 are each 1.25 mm board, iit Spaces of the same width; the chip feed tones IJ is a coherent Metallschichtι the conductor 15 finally, each are 0.125 mm wide with spacing between them. of 0.25 mm. These conductors are made according to the conventional Siefedruete method using a paste made from dlsperglerfcem in a suitable organic inert product Gold powder or gold and platinum powder. That so feedruefcte The structure is then heated to a temperature of 50 ° G in air to bake out the organic carrier material and then further to 75 © or in a nitrogen atmosphere 800 ° C heated to the metal particles in the printed conductors to consolidate or to condense, in such a way that the printed Leaders become highly conductive. With this method, the connection connections with the plated-on Feedthrough connections through the insulating layers 12 and 14 manufactured. - "■■.

Als nächstens wird sodann die Isolierschicht 16 ausgefiütrt. Hierzu wird ein Glas der folgenden Zusammensetzung verwendet! >Next, the insulating layer 16 is then applied. A glass of the following composition is used for this! >

SiO2 SiO 2 36>A36> A OewOew B2O3 B 2 O 3 18.818.8 QewQew Na2ONa 2 O 12.512.5 ItIt K2OK 2 O 6.j56.j5 IlIl BaOBaO 26.026.0 IlIl

909838/127S ·"»/-909838 / 127S · "» / -

Dabei müssen in dieser Schicht Lcoher i8 von 2,5mm Seitenlänge gemäß einer regelmäßigen Anordnung an den für die integrierten Schaltbauteile vorgesehenen dtellen gelassen werden. Die Schicht 16 wird daher im Siebdruckverfahren hergestellt, und zwar unter Verwendung einer Siebdruckpaste, welche aus einem Gewichtsteil Siebdruckflüssigkeit und drei Gewiehtsteilen Glaspulver der vorstehend genannten Zusammensetzung besteht. Das so erhaltene Gebilde wird sodann In. Luft zum Ausheizen, der organischen Bestandteile der Schicht 16 auf 5000C erwärmt und sodann in Stickstoff 15 Minuten lang auf 7500C erhitzt, um das Glaspulver zum Schmelzen zu bringen, wodurch eine glatt©, gleichförmige Glasschicht von 12,5 bis 50 Mlkrorl&Lcke entsteht.In this case, Lcoher 18 with a side length of 2.5 mm must be left in this layer in accordance with a regular arrangement on the points provided for the integrated circuit components. The layer 16 is therefore produced in the screen printing process using a screen printing paste which consists of one part by weight of screen printing liquid and three parts by weight of glass powder of the above-mentioned composition. The structure thus obtained is then In. Air for baking, the organic constituents of the layer 16 are heated to 500 ° C. and then heated in nitrogen to 750 ° C. for 15 minutes in order to melt the glass powder, creating a smooth, uniform glass layer of 12.5 to 50 ml arises.

Als nächster Verfahrenssehritt werden in der Schicht l6 Löcher bzw. Ausnehmungen hergestellt, durch welche hindurch die Anschlüsse erfolgen sollen. Diese Löcher bzw. Ausnehmungen werden nach herkömmlichen Potoabdecker- und Ätzverfahren hergestellt.As the next step in the process, holes or recesses are produced in layer 16 through which the connections are to be made. These holes or recesses are produced using conventional pot cover and etching processes.

Als nächster Verfahrenssohrltt werden sodann die Leiter 17 hergestellt. Diese werden im wesentlichen in gleicher Weise wie die Leiter 15 erzeugt« Während dieses ¥erf$hrens»chritte« wird die aufgedruckte MetaHp&efce gleichseitig duroh <Jie Offnungen in der Isolierschicht 16 bis su den daruafeerllegenden Leitern 15 gedrückt, wodurch die Verbindungen swiaehen d*n beiden Signalleitersätseß hergestellt werden. Die T**perafcur beim Aueheizen dieses zweiten Leitersatzes ist auf JQO0C beschränkt.As the next process step, the conductors 17 are then produced. These are produced essentially in the same way as the conductors 15. During this “step”, the imprinted metaHp & efce is pressed through the openings in the insulating layer 16 down to the underlying conductors 15, which causes the connections to change both Signalleitersätseß are made. The T ** perafcur when heating this second set of conductors is limited to JQO 0 C.

Als letzter Verfahrensschritt werden sodann die integrierten Sehaltungachips 19 an dem Gebilde angeordnet. Hierzu werden auf der Isolierschicht 14 an den für die integrierten Sch&ltbeuteile vorgesehenen Stellen Metallkissen 15A hergestellt, beispielsweise gleichzeitig mit der Herstellung der Leiter 15JAs a final process step, the integrated posture chips 19 are then arranged on the structure. To do this, on of the insulating layer 14 on the for the integrated bag parts provided places metal pads 15A made, for example simultaneously with the manufacture of the ladder 15J

909838/1278 ./·909838/1278 ./·

BADBATH

-8- 19075B7-8- 19075B7

mit diesen Kissen werden die integrierten Sohaltbauteile mit ihren metalliBierten Unterseiten durch geeignet® Lotsehichten verbunden. Die Anschlußverbindungen zwischen den integrierten Schaltbauteilen und den Leitern 16 und 17 werden dureh Aluminium- oder Goldschaltdrähte 26 hergestellt. : -With these cushions, the integrated components are also included their metallized undersides with suitable® solder layers tied together. The connections between the integrated Switching components and the conductors 16 and 17 are dureh Aluminum or gold jumper wires 26 made. : -

Ein für die vorliegende Erfindung wesentliches Mertcm&i Is* die Verwendung von Glaskeramik für die Hauptisolieraehlßhten. Durch die Verwendung dieser Werkstoffe ist es «ugliea/ hohe Wärmeausdehnungskoeffizienten zu erzielen; und hierdurch wiederum 1st es möglich/ erhebliche Querschnitte aus Metallen hoher Wärmeausdehnung» wie beispielsweise Kupfer in der Packung« unterzubringen, was die Erzielung,bedeutsaaer technischer Vorteile gestattet. Beispieleweise gewiihr leistet dies eine gute Wärmeabfuhr« was eine dichte Packung der - '.' Schaltanordnungen gestattet. Des weiteren kann infolge der ausgezeichneten Wärmeleitung von Kupfer Wärme Über die Seite der Packung abgeführt werden, wodurch die beiden Hauptoberflächen des Subitratkörpers zur Aufnahae vonSchaltung«teilen verfügbar bleiben. Ein weiterer Vorteil der Verwendung Von Glaskeramik besteht darin« daß dieser Werkstoff wie sehr fest in Form sehr dünner Schichten»it Metftll·»An essential feature of the present invention is the use of glass ceramics for the main insulation seams. The use of these materials makes it possible to achieve high coefficients of thermal expansion; and this in turn makes it possible to accommodate considerable cross-sections of metals with high thermal expansion "such as copper in the pack", which enables significant technical advantages to be achieved. For example, this ensures good heat dissipation "what a close packing of the -". " Switching arrangements permitted. Furthermore, due to the excellent heat conduction of copper, heat can be dissipated via the side of the packing, whereby the two main surfaces of the subitrate body remain available for receiving circuit parts. Another advantage of using glass ceramics is "that this material is very solid in the form of very thin layers" it Metftll · »

werden kann. Jedoch hat Olaskeramik höhere Wärmeleltangskoefflzlenten als Gläser, wae den guten Wärmeübergang unter-ν stützt. Ein weiterer wesentlicher Vorteil der Verwendung von Glaskeramik hängt mit dem Gewinn an Hitzebeständigkeit dee Werkstoffes zusammen, der durch die Überführung^ der Ollleercan be. But has Olaskeramik higher Wärmeleltangskoefflzlenten as glasses, wae the good heat transfer sub ν supports. Another essential advantage of the use of glass ceramic is related to the gain in heat resistance of the material, which is achieved through the transfer of the Ollleer in Glaskeramlkwerkstoff erreicht wird. Ib beschriebenenis achieved in glass ceramic material. Ib described

Ausführungsbeispiel beträgt wegen dee in der Paokung enthaltenen Kupfers die maximale Olühtemperatur für die ersten Isolierschichten IQOO0C (Schmelzpunkt von Kupfer ist gleich 10830C). Im allgemeinen haben Gläser, welohe bei dieser Temperatur schmelzen, dilatrometrisohe Erwstohunge-Embodiment is for dee contained in the copper Paokung Olühtemperatur the maximum for the first insulating IQOO 0 C (melting point of copper is equal to 1083 0 C). In general, glasses which melt at this temperature have dilatrometric benefits.

909838/127Ä -909838 / 127Ä -

temperaturen unterhalb 6OO°C. Dies stellt daher die Maximaltemperatur für nachfolgende Wärmebehandlungen dar. Gläser, die unter 600°C schmelzen, sind bekannt, jedooh sind allgemein gesehen ihre chemischen und elektrischen Eigenschaften nur mäßig. Was die Herstellung der Leiter betrifft, so benötigen Metallpasten für Siebdruekzweoke Temperaturen über 600°C, um die erforderlichen elektrischen Leitfähigkeiten in den gedruckten Leitern zu entwickeln. Durch die Verwendung von Glaskeramik werden diese Problem« infolge der im Verlauf der Kristallisation erzielten Zunahme der Hitzebeständigkeit weltgehend verringert. Beispielsweise können Gläser vom allgemeinen Li2Otemperatures below 600 ° C. This therefore represents the maximum temperature for subsequent heat treatments. Glasses that melt below 600 ° C are known, but generally speaking, their chemical and electrical properties are only moderate. As far as the manufacture of the conductors is concerned, metal pastes for screen printing need temperatures above 600 ° C in order to develop the necessary electrical conductivity in the printed conductors. The use of glass ceramics reduces these problems worldwide as a result of the increase in heat resistance achieved in the course of crystallization. For example, glasses of the general Li 2 O

2222nd

bei 900 bis 95O0C auf Kupfer aufgebracht und anschlleSend zu Glaskeramikschichtenkristallisiert werden, welche Temperaturen im Bereich von 750 bis 800°C aushalten. Auf diese Welse können für die Aufbringung nachfolgender Isolier- und Leiterschichten höhere Temperaturen verwendet werden.applied to copper at 900 to 95O 0 C and then crystallized to form glass ceramic layers which can withstand temperatures in the range from 750 to 800 ° C. In this way, higher temperatures can be used for the application of the subsequent insulating and conductor layers.

Das beschriebene Ausführungsbeispiel kann in seinem AufbauThe embodiment described can in its structure

und dem beschriebenen Verfahren seiner Herstellung selbstverständlich in marslgfaoher Weis· abgewandelt worden. Beispielsweise können mit Glas Mibersogene Drähte an Stelle der nackten Drähte und der Glaskeraaik-KoBp&ktkurper in dem ersten Heretellungsverfahretuiechritt verwendet werden, oder es körnen mit Glas überzogene Drähte durch Löcher gefädelt werden, die nach der Abscheidung der Signalleiter in dem Gebilde erzeugt werden, wenn^gleloh dies weniger bequem ist. Die Isolierschichten können als gesonderte dünne Glasfolien hergestellt werden, die in der geeigneten WoLse gebohlt oder geätzt und sodann durch Anwendung von Wärme und Druok mit dem Substi*atkörper ver-and the described method of its production has of course been modified in Martian white. For example, mibersogenic wires can be used with glass in place the bare wires and the Glaskeraaik-KoBp & ktkurper used in the first step of the manufacturing process or wires covered with glass can be threaded through holes made after the deposition of the Signal conductors are generated in the structure when ^ gleloh this is less convenient. The insulating layers can are produced as separate thin glass films that bored or etched in the appropriate wool and then through Application of heat and pressure with the substance body

909838/1278909838/1278

bunden werden. Dabei könnte sich eine diesel? Pollen über den Metallsubsfcratkörper hinaus erstrecken imd die Randanschlüsse aufnehmen. Die Leiter könnten durch Vakuumauf dämpfung hergestellt werden, oder auch in der Weise, daß man dünne Metallfolien mit dem Oebilde verbindet und danach ätzt. Die Löcher für die Durchführungsverbindungen in der im Siebdruck hergestellten Schicht 16 könnten*» Rahmen des Druckvorganges erzeugt werden, wenngleich die nachfolgende Ätzung dieser Löcher ein genaueres Verfahren ist. Schließlich könnten beide Selten des Substratkörperaι für Signalleiter verwendet werden, wenngleich sich hierdurch die Anzahl der benötigten Durchführungsverbindungen stark erhöhen würde. Die Ausnehmungen 18 an den fürdieintegrierten Schaltungen vorgesehenen Stellen könnten in der Isolierschicht 14 vorgesehen werden, derart, daß die integrierten Schaltungen direkt, auf dem Substrat befestigt werden.be bound. Could this be a diesel? Pollen over extend the metal substrate body out and accommodate the edge connections. The ladder could go through Vacuum on attenuation can be produced, or in such a way, that one connects thin metal foils with the structure and then etches. The holes for the lead-through connections in the screen-printed layer 16 could * » Frame of the printing process are generated, although the subsequent etching of these holes is a more accurate method. Finally, both could seldom of the substrate body for Signal conductors are used, albeit this is the number of bushing connections required is high would increase. The recesses 18 on the integrated Circuits provided could be in the Insulating layer 14 are provided such that the integrated circuits directly attached to the substrate will.

Patentansprüche»Patent claims »

909838/1278909838/1278

Claims (1)

P a t β η t a η s ρ r U c h βP a t β η t a η s ρ r U c h β 1)JElektrisohe Schaltungseinheit, welche auf eine«Substratkörper mehrere Schichten von gegeneinander isolierten Leitern zur Verbindung mehrerer Sohaltungsteauteile aufweißt, dadurch g e ic e η η ζ e i c h η st, daß dor Subetratkörper (10) eine Isolierte Metallplatte von hohen elektrischem und Wäniel®ItvennÖgen 1st, welche als Speißespannungszufuhrebene und als Wärmesenke dient»1) Electric circuit unit which is placed on a substrate body several layers of isolated from each other Welds ladders to connect several so-keeping parts, thereby g e ic e η η ζ e i c h η st that the substrate body (10) an insulated metal plate of high electrical and Wäniel®ItvennÖgen, which is called Food voltage supply level and serves as a heat sink » 2) Elektrische Schaltungseinheit nach Anspruch 1, dadurch gekennzel chnet, daß der Substratkörper (10) sich (bei 1OA, Fig. 1) über die Isolieraohiohten (12,14) und die Leitersohlohten hinaus erstreckt, derart,2) Electrical circuit unit according to claim 1, characterized gekennzel chnet that the substrate body (10) extends (at 1OA, Fig. 1) over the Isolieraohiohten (12,14) and the conductor soldering addition , in such a way, daß er an einer KUhlwittelleitung (50) befestigt werden kann.that it is attached to a KUhlwittelleitung (50) can be. 3) Elektrische Schaltongseinheit nach Anspruch 1 oder 2, dadurch g e k e η η ζ e i σ h η e t, daß die Isolierung aus Glaskeramik besteht.3) Electrical switching unit according to claim 1 or 2, thereby g e k e η η ζ e i σ h η e t that the insulation consists of glass ceramic. k) Elektrische Schaltungeeinheit>nach Anspruch 3, dadurch g e k e η η ζ e i c h η e t, daß der Substratkörper (10) die Leiter (11,15,17) auf seiner einen Saite und auf seiner anderen Seite eine Speisezufuhr- oder Anachlußebene (1^) trögt, mit welcher die Anschlußverbindungen über Drähte (23) erfolgen, welche durch Löcher (20,21) in dem Substratkörper (10) hindurchführen und durch Olaskeramik (22) isoliert sind. k) Electrical circuit unit> according to claim 3, characterized geke η η ζ eich η et that the substrate body (10) has the conductors (11,15,17) on its one string and on its other side a supply or connection level (1 ^ ) with which the connection connections are made via wires (23) which pass through holes (20, 21) in the substrate body (10) and are insulated by Olas ceramic (22). 909838/1276909838/1276 4907S674907S67 - la - ■:-■■■■· - :: -·Λ·,-γ -- la - ■: - ■■■■ · - :: - · Λ ·, -γ - 5) Verfahren zur Herstellung einer elektrischen Schaltung*·5) Method of making an electrical circuit * einheit nach Anspruoh Λ, dadurch ge k · η η β eich η β t,unit according to claim Λ, thereby ge k η η β calibrated η β t, daß in dem Substratkörper (10) Löoher (20,21) geeÄÄthat in the substrate body (10) Löoher (20,21) geeÄÄ einem vorgegebenen Muster erzeugt werden, daß van UG&ülltea predetermined pattern can be generated that van UG & üllte Drähte (23,22) durch diese Löcher hindurchsteokt, OafiWires (23,22) stuck through these holes, Oafi das so erhaltene Gebilde zur Versiegelung der Drtfnt« Inthe structure thus obtained for sealing the village dem Substratkörper erhitzt wird, daß man die OberflKohen Ithe substrate body is heated so that the surfaces I des Substratkörpers eben schleift und sodann auf demthe substrate body just grinds and then on the Substratkörper die Leitersohiohten (15,17)erzeugt.Substrate body, the conductor resistors (15, 17) generated. -ν '-ν ' 909838/1278 ___909838/1278 ___ ' INSPECTED ' INSPECTED
DE19691907567 1968-02-15 1969-02-14 Electrical circuit unit Pending DE1907567A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB750768 1968-02-15

Publications (1)

Publication Number Publication Date
DE1907567A1 true DE1907567A1 (en) 1969-09-18

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ID=9834448

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DE19691907567 Pending DE1907567A1 (en) 1968-02-15 1969-02-14 Electrical circuit unit

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DE (1) DE1907567A1 (en)
FR (1) FR2001970A1 (en)
GB (1) GB1232621A (en)
NL (1) NL6902359A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078582A2 (en) * 1981-11-04 1983-05-11 Philips Electronics Uk Limited Electrical circuits
EP0139029A1 (en) * 1983-10-19 1985-05-02 Olin Corporation Improved semiconductor package
US4570337A (en) * 1982-04-19 1986-02-18 Olin Corporation Method of assembling a chip carrier
US4853491A (en) * 1984-10-03 1989-08-01 Olin Corporation Chip carrier
US4862323A (en) * 1984-04-12 1989-08-29 Olin Corporation Chip carrier
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4074342A (en) * 1974-12-20 1978-02-14 International Business Machines Corporation Electrical package for lsi devices and assembly process therefor
US4840654A (en) * 1985-03-04 1989-06-20 Olin Corporation Method for making multi-layer and pin grid arrays
US4712161A (en) * 1985-03-25 1987-12-08 Olin Corporation Hybrid and multi-layer circuitry
US4696851A (en) * 1985-03-25 1987-09-29 Olin Corporation Hybrid and multi-layer circuitry
US4725333A (en) * 1985-12-20 1988-02-16 Olin Corporation Metal-glass laminate and process for producing same
US4821151A (en) * 1985-12-20 1989-04-11 Olin Corporation Hermetically sealed package
US4687540A (en) * 1985-12-20 1987-08-18 Olin Corporation Method of manufacturing glass capacitors and resulting product

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078582A2 (en) * 1981-11-04 1983-05-11 Philips Electronics Uk Limited Electrical circuits
EP0078582A3 (en) * 1981-11-04 1986-01-29 Philips Electronic And Associated Industries Limited Electrical circuits
US4570337A (en) * 1982-04-19 1986-02-18 Olin Corporation Method of assembling a chip carrier
US5014159A (en) * 1982-04-19 1991-05-07 Olin Corporation Semiconductor package
US4866571A (en) * 1982-06-21 1989-09-12 Olin Corporation Semiconductor package
EP0139029A1 (en) * 1983-10-19 1985-05-02 Olin Corporation Improved semiconductor package
US4862323A (en) * 1984-04-12 1989-08-29 Olin Corporation Chip carrier
US4853491A (en) * 1984-10-03 1989-08-01 Olin Corporation Chip carrier

Also Published As

Publication number Publication date
NL6902359A (en) 1969-08-19
FR2001970A1 (en) 1969-10-03
GB1232621A (en) 1971-05-19

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